位置：首页 > IC中文资料第10962页 > M58WR064B
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
M58WR064B | 64Mbit(4Mbx16,MultipleBank,Burst)1.8VSupplyFlashMemory SUMMARYDESCRIPTION TheM58WR064isa64Mbit(4Mbitx16)non-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitryanda1.65Vto3.3VVDDQsupplyfortheInput/Outputpins.Anopti | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 |  |   |
64Mbit4Mbx16,MultipleBank,Burst1.8VSupplyFlashMemory SUMMARYDESCRIPTION TheM58WR064Eisa64Mbit(4Mbitx16)non-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitryanda1.65Vto3.3VVDDQsupplyfortheInput/Outputpins.Anopt | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
64Mbit(4Mbx16,MultipleBank,Burst)1.8VSupplyFlashMemory SUMMARYDESCRIPTION TheM58WR064isa64Mbit(4Mbitx16)non-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitryanda1.65Vto3.3VVDDQsupplyfortheInput/Outputpins.Anopti | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
64Mbit(4Mbx16,MultipleBank,Burst)1.8VSupplyFlashMemory SUMMARYDESCRIPTION TheM58WR064isa64Mbit(4Mbitx16)non-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitryanda1.65Vto3.3VVDDQsupplyfortheInput/Outputpins.Anopti | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
64Mbit(4Mbx16,MultipleBank,Burst)1.8VSupplyFlashMemory SUMMARYDESCRIPTION TheM58WR064isa64Mbit(4Mbitx16)non-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitryanda1.65Vto3.3VVDDQsupplyfortheInput/Outputpins.Anopti | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
64Mbit4Mbx16,MultipleBank,Burst1.8VSupplyFlashMemory SUMMARYDESCRIPTION TheM58WR064Eisa64Mbit(4Mbitx16)non-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitryanda1.65Vto3.3VVDDQsupplyfortheInput/Outputpins.Anopt | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
64Mbit4Mbx16,MultipleBank,Burst1.8VSupplyFlashMemory SUMMARYDESCRIPTION TheM58WR064Eisa64Mbit(4Mbitx16)non-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitryanda1.65Vto3.3VVDDQsupplyfortheInput/Outputpins.Anopt | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
64Mbit4Mbx16,MultipleBank,Burst1.8VSupplyFlashMemory SUMMARYDESCRIPTION TheM58WR064Eisa64Mbit(4Mbitx16)non-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitryanda1.65Vto3.3VVDDQsupplyfortheInput/Outputpins.Anopt | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | |
M58WR064B产品属性
- 类型
描述
- 型号
M58WR064B
- 制造商
STMICROELECTRONICS
- 制造商全称
STMicroelectronics
- 功能描述
64 Mbit(4Mb x 16, Multiple Bank, Burst ) 1.8V Supply Flash Memory
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NA |
22+ |
N/A |
354000 |
||||
ST |
2016+ |
BGA |
6528 |
只做原厂原装现货!终端客户个别型号可以免费送样品! |
|||
ST |
2339+ |
BGA |
5632 |
公司原厂原装现货假一罚十!特价出售!强势库存! |
|||
MICRON/美光 |
24+23+ |
VFBGA56 |
12580 |
16年电子元件现货供应商 终端BOM表可配单提供样品 |
|||
ST |
23+ |
QFP |
3200 |
全新原装、诚信经营、公司现货销售! |
|||
MICRON/美光 |
2022 |
VFBGA56 |
80000 |
原装现货,OEM渠道,欢迎咨询 |
|||
Micron |
23+ |
56VFBGA (7.7x9) |
9000 |
原装正品，支持实单 |
|||
Numonyx-ADIVISIONOFMICRO |
2022 |
ICFLASH64MBIT70NS56VFBGA |
5058 |
原厂原装正品,价格超越代理 |
|||
ST |
FBGA |
36900 |
集团化配单-有更多数量-免费送样-原包装正品现货-正规 |
||||
MICRON/美光 |
21+ |
VFBGA56 |
5000 |
原装现货/假一赔十/支持第三方检验 |
M58WR064B芯片相关品牌
M58WR064B规格书下载地址
M58WR064B参数引脚图相关
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DdatasheetPDF页码索引
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