位置：首页 > IC中文资料第9931页 > M58WR064HB
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
M58WR064HB | 64 Mbit (4Mb x16, Multiple Bank, Burst) 1.8V supply Flash memories 文件：2.02336 Mbytes Page：111 Pages | NUMONYX |   | |
M58WR064HB | 64 Mbit (4Mb x16, Multiple Bank, Burst) 1.8V supply Flash memories | Micron 美光 | | |
64 Mbit 4Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M58WR064E is a 64 Mbit (4Mbit x16) non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2.2V VDD supply for the circuitry and a 1.65V to 3.3V VDDQ supply for the Input/Output pins. An opt | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit (4Mb x16, Multiple Bank, Burst) 1.8V supply Flash memories 文件：2.02336 Mbytes Page：111 Pages | NUMONYX | | ||
64 Mbit (4Mb x16, Multiple Bank, Burst) 1.8V supply Flash memories 文件：2.02336 Mbytes Page：111 Pages | NUMONYX | | ||
64 Mbit (4Mb x16, Multiple Bank, Burst) 1.8V supply Flash memories 文件：2.02336 Mbytes Page：111 Pages | NUMONYX | | ||
64 Mbit (4Mb x16, Multiple Bank, Burst) 1.8V supply Flash memories 文件：2.02336 Mbytes Page：111 Pages | NUMONYX | | ||
64 Mbit (4Mb x 16, Multiple Bank, Burst ) 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M58WR064 is a 64 Mbit (4Mbit x16) non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2.2V VDD supply for the circuitry and a 1.65V to 3.3V VDDQ supply for the Input/Output pins. An opti | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit 4Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M58WR064E is a 64 Mbit (4Mbit x16) non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2.2V VDD supply for the circuitry and a 1.65V to 3.3V VDDQ supply for the Input/Output pins. An opt | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit 4Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M58WR064E is a 64 Mbit (4Mbit x16) non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2.2V VDD supply for the circuitry and a 1.65V to 3.3V VDDQ supply for the Input/Output pins. An opt | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit 4Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M58WR064E is a 64 Mbit (4Mbit x16) non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2.2V VDD supply for the circuitry and a 1.65V to 3.3V VDDQ supply for the Input/Output pins. An opt | STMICROELECTRONICS 意法半导体 | |
M58WR064HB产品属性
- 类型
描述
- 型号
M58WR064HB
- 制造商
NUMONYX
- 制造商全称
Numonyx B.V
- 功能描述
64 Mbit(4Mb x16, Multiple Bank, Burst) 1.8V supply Flash memories
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST/意法 |
24+ |
NA/ |
100 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
ST/意法 |
25+ |
VBGA56 |
54648 |
百分百原装现货 实单必成 欢迎询价 |
|||
NA |
8560 |
一级代理 原装正品假一罚十价格优势长期供货 |
|||||
SST |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
||||
ST |
18+ |
BGA |
36575 |
全新原装现货,可出样品,可开增值税发票 |
|||
N/A |
25+ |
ROHS |
880000 |
明嘉莱只做原装正品现货 |
|||
ST |
26+ |
BGA |
60000 |
只有原装 可配单 |
|||
ST/意法 |
2402+ |
VFBGA56 |
8324 |
原装正品!实单价优! |
|||
ST |
23+ |
BGA |
5000 |
原装正品,假一罚十 |
|||
ST |
25+ |
BGA |
16900 |
原装，请咨询 |
M58WR064HB芯片相关品牌
M58WR064HB规格书下载地址
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