位置：首页 > IC中文资料第9931页 > M58WR064HB
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
M58WR064HB | 64Mbit(4Mbx16,MultipleBank,Burst)1.8VsupplyFlashmemories 文件：2.02336 Mbytes Page：111 Pages | NUMONYXNUMONYX 恒忆 |  |   |
64Mbit4Mbx16,MultipleBank,Burst1.8VSupplyFlashMemory SUMMARYDESCRIPTION TheM58WR064Eisa64Mbit(4Mbitx16)non-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitryanda1.65Vto3.3VVDDQsupplyfortheInput/Outputpins.Anopt | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 |  | | |
64Mbit(4Mbx16,MultipleBank,Burst)1.8VsupplyFlashmemories 文件：2.02336 Mbytes Page：111 Pages | NUMONYXNUMONYX 恒忆 | | | |
64Mbit(4Mbx16,MultipleBank,Burst)1.8VsupplyFlashmemories 文件：2.02336 Mbytes Page：111 Pages | NUMONYXNUMONYX 恒忆 | | | |
64Mbit(4Mbx16,MultipleBank,Burst)1.8VsupplyFlashmemories 文件：2.02336 Mbytes Page：111 Pages | NUMONYXNUMONYX 恒忆 | | | |
64Mbit(4Mbx16,MultipleBank,Burst)1.8VsupplyFlashmemories 文件：2.02336 Mbytes Page：111 Pages | NUMONYXNUMONYX 恒忆 | | | |
64Mbit(4Mbx16,MultipleBank,Burst)1.8VSupplyFlashMemory SUMMARYDESCRIPTION TheM58WR064isa64Mbit(4Mbitx16)non-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitryanda1.65Vto3.3VVDDQsupplyfortheInput/Outputpins.Anopti | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
64Mbit4Mbx16,MultipleBank,Burst1.8VSupplyFlashMemory SUMMARYDESCRIPTION TheM58WR064Eisa64Mbit(4Mbitx16)non-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitryanda1.65Vto3.3VVDDQsupplyfortheInput/Outputpins.Anopt | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
64Mbit4Mbx16,MultipleBank,Burst1.8VSupplyFlashMemory SUMMARYDESCRIPTION TheM58WR064Eisa64Mbit(4Mbitx16)non-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitryanda1.65Vto3.3VVDDQsupplyfortheInput/Outputpins.Anopt | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
64Mbit4Mbx16,MultipleBank,Burst1.8VSupplyFlashMemory SUMMARYDESCRIPTION TheM58WR064Eisa64Mbit(4Mbitx16)non-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitryanda1.65Vto3.3VVDDQsupplyfortheInput/Outputpins.Anopt | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | |
M58WR064HB产品属性
- 类型
描述
- 型号
M58WR064HB
- 制造商
NUMONYX
- 制造商全称
Numonyx B.V
- 功能描述
64 Mbit(4Mb x16, Multiple Bank, Burst) 1.8V supply Flash memories
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VBGA56 |
23+ |
NA |
15659 |
振宏微专业只做正品,假一罚百! |
|||
ST意法半导体 |
22+21+ |
VBGA56 |
2014 |
16年电子元件现货供应商 终端BOM表可配单提供样品 |
|||
ST/意法 |
21+ |
BGA |
5000 |
原装现货/假一赔十/支持第三方检验 |
|||
Micron |
1844+ |
VFBGA56 |
6528 |
只做原装正品假一赔十为客户做到零风险!! |
|||
N/A |
08+ |
ROHS |
880000 |
明嘉莱只做原装正品现货 |
|||
ST/意法 |
23+ |
NA/ |
100 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
ST/STMicroelectronics/意法半导 |
21+ |
BGA |
5479 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
ST |
22+ |
BGA |
2679 |
原装优势!绝对公司现货!可长期供货! |
|||
ST |
23+ |
BGA |
5000 |
原装正品,假一罚十 |
|||
ST意法 |
21+ |
BGA |
4550 |
全新原装现货 |
M58WR064HB芯片相关品牌
M58WR064HB规格书下载地址
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DdatasheetPDF页码索引
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