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型号	功能描述	生产厂家企业	LOGO
M58WR064	64 Mbit 4Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M58WR064E is a 64 Mbit (4Mbit x16) non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2.2V VDD supply for the circuitry and a 1.65V to 3.3V VDDQ supply for the Input/Output pins. An opt	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M58WR064B	64 Mbit (4Mb x 16, Multiple Bank, Burst ) 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M58WR064 is a 64 Mbit (4Mbit x16) non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2.2V VDD supply for the circuitry and a 1.65V to 3.3V VDDQ supply for the Input/Output pins. An opti	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M58WR064B100ZB6T	64 Mbit (4Mb x 16, Multiple Bank, Burst ) 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M58WR064 is a 64 Mbit (4Mbit x16) non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2.2V VDD supply for the circuitry and a 1.65V to 3.3V VDDQ supply for the Input/Output pins. An opti	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M58WR064B70ZB6T	64 Mbit (4Mb x 16, Multiple Bank, Burst ) 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M58WR064 is a 64 Mbit (4Mbit x16) non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2.2V VDD supply for the circuitry and a 1.65V to 3.3V VDDQ supply for the Input/Output pins. An opti	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M58WR064B85ZB6T	64 Mbit (4Mb x 16, Multiple Bank, Burst ) 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M58WR064 is a 64 Mbit (4Mbit x16) non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2.2V VDD supply for the circuitry and a 1.65V to 3.3V VDDQ supply for the Input/Output pins. An opti	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M58WR064EB	64 Mbit 4Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M58WR064E is a 64 Mbit (4Mbit x16) non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2.2V VDD supply for the circuitry and a 1.65V to 3.3V VDDQ supply for the Input/Output pins. An opt	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M58WR064EB10ZB6T	64 Mbit 4Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M58WR064E is a 64 Mbit (4Mbit x16) non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2.2V VDD supply for the circuitry and a 1.65V to 3.3V VDDQ supply for the Input/Output pins. An opt	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M58WR064EB70ZB6T	64 Mbit 4Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M58WR064E is a 64 Mbit (4Mbit x16) non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2.2V VDD supply for the circuitry and a 1.65V to 3.3V VDDQ supply for the Input/Output pins. An opt	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M58WR064EB80ZB6T	64 Mbit 4Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M58WR064E is a 64 Mbit (4Mbit x16) non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2.2V VDD supply for the circuitry and a 1.65V to 3.3V VDDQ supply for the Input/Output pins. An opt	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M58WR064EBZB	64 Mbit 4Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M58WR064E is a 64 Mbit (4Mbit x16) non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2.2V VDD supply for the circuitry and a 1.65V to 3.3V VDDQ supply for the Input/Output pins. An opt	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M58WR064ET	64 Mbit 4Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M58WR064E is a 64 Mbit (4Mbit x16) non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2.2V VDD supply for the circuitry and a 1.65V to 3.3V VDDQ supply for the Input/Output pins. An opt	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M58WR064ET10ZB6T	64 Mbit 4Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M58WR064E is a 64 Mbit (4Mbit x16) non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2.2V VDD supply for the circuitry and a 1.65V to 3.3V VDDQ supply for the Input/Output pins. An opt	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M58WR064ET70ZB6T	64 Mbit 4Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M58WR064E is a 64 Mbit (4Mbit x16) non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2.2V VDD supply for the circuitry and a 1.65V to 3.3V VDDQ supply for the Input/Output pins. An opt	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M58WR064ET80ZB6T	64 Mbit 4Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M58WR064E is a 64 Mbit (4Mbit x16) non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2.2V VDD supply for the circuitry and a 1.65V to 3.3V VDDQ supply for the Input/Output pins. An opt	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M58WR064ETZB	64 Mbit 4Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M58WR064E is a 64 Mbit (4Mbit x16) non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2.2V VDD supply for the circuitry and a 1.65V to 3.3V VDDQ supply for the Input/Output pins. An opt	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M58WR064E-ZBT	64 Mbit 4Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M58WR064E is a 64 Mbit (4Mbit x16) non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2.2V VDD supply for the circuitry and a 1.65V to 3.3V VDDQ supply for the Input/Output pins. An opt	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M58WR064FB60ZB6	64 Mbit (4Mb x16, Multiple Bank, Burst) 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M58WR064FT/B is a 64 Mbit (4Mbit x16) nonvolatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.7V to 2V VDD supply for the circuitry and a 1.7V to 2.24V VDDQ supply for the Input/Output pins. An opti	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M58WR064FB60ZB6E	64 Mbit (4Mb x16, Multiple Bank, Burst) 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M58WR064FT/B is a 64 Mbit (4Mbit x16) nonvolatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.7V to 2V VDD supply for the circuitry and a 1.7V to 2.24V VDDQ supply for the Input/Output pins. An opti	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M58WR064FB60ZB6F	64 Mbit (4Mb x16, Multiple Bank, Burst) 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M58WR064FT/B is a 64 Mbit (4Mbit x16) nonvolatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.7V to 2V VDD supply for the circuitry and a 1.7V to 2.24V VDDQ supply for the Input/Output pins. An opti	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M58WR064FB60ZB6T	64 Mbit (4Mb x16, Multiple Bank, Burst) 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M58WR064FT/B is a 64 Mbit (4Mbit x16) nonvolatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.7V to 2V VDD supply for the circuitry and a 1.7V to 2.24V VDDQ supply for the Input/Output pins. An opti	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M58WR064FB70ZB6	64 Mbit (4Mb x16, Multiple Bank, Burst) 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M58WR064FT/B is a 64 Mbit (4Mbit x16) nonvolatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.7V to 2V VDD supply for the circuitry and a 1.7V to 2.24V VDDQ supply for the Input/Output pins. An opti	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M58WR064FB70ZB6E	64 Mbit (4Mb x16, Multiple Bank, Burst) 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M58WR064FT/B is a 64 Mbit (4Mbit x16) nonvolatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.7V to 2V VDD supply for the circuitry and a 1.7V to 2.24V VDDQ supply for the Input/Output pins. An opti	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M58WR064FB70ZB6F	64 Mbit (4Mb x16, Multiple Bank, Burst) 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M58WR064FT/B is a 64 Mbit (4Mbit x16) nonvolatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.7V to 2V VDD supply for the circuitry and a 1.7V to 2.24V VDDQ supply for the Input/Output pins. An opti	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M58WR064FB70ZB6T	64 Mbit (4Mb x16, Multiple Bank, Burst) 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M58WR064FT/B is a 64 Mbit (4Mbit x16) nonvolatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.7V to 2V VDD supply for the circuitry and a 1.7V to 2.24V VDDQ supply for the Input/Output pins. An opti	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M58WR064FB80ZB6	64 Mbit (4Mb x16, Multiple Bank, Burst) 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M58WR064FT/B is a 64 Mbit (4Mbit x16) nonvolatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.7V to 2V VDD supply for the circuitry and a 1.7V to 2.24V VDDQ supply for the Input/Output pins. An opti	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M58WR064FB80ZB6E	64 Mbit (4Mb x16, Multiple Bank, Burst) 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M58WR064FT/B is a 64 Mbit (4Mbit x16) nonvolatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.7V to 2V VDD supply for the circuitry and a 1.7V to 2.24V VDDQ supply for the Input/Output pins. An opti	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M58WR064FB80ZB6F	64 Mbit (4Mb x16, Multiple Bank, Burst) 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M58WR064FT/B is a 64 Mbit (4Mbit x16) nonvolatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.7V to 2V VDD supply for the circuitry and a 1.7V to 2.24V VDDQ supply for the Input/Output pins. An opti	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M58WR064FB80ZB6T	64 Mbit (4Mb x16, Multiple Bank, Burst) 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M58WR064FT/B is a 64 Mbit (4Mbit x16) nonvolatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.7V to 2V VDD supply for the circuitry and a 1.7V to 2.24V VDDQ supply for the Input/Output pins. An opti	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M58WR064FT	64 Mbit (4Mb x16, Multiple Bank, Burst) 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M58WR064FT/B is a 64 Mbit (4Mbit x16) nonvolatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.7V to 2V VDD supply for the circuitry and a 1.7V to 2.24V VDDQ supply for the Input/Output pins. An opti	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M58WR064FT60ZB6	64 Mbit (4Mb x16, Multiple Bank, Burst) 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M58WR064FT/B is a 64 Mbit (4Mbit x16) nonvolatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.7V to 2V VDD supply for the circuitry and a 1.7V to 2.24V VDDQ supply for the Input/Output pins. An opti	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M58WR064FT60ZB6E	64 Mbit (4Mb x16, Multiple Bank, Burst) 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M58WR064FT/B is a 64 Mbit (4Mbit x16) nonvolatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.7V to 2V VDD supply for the circuitry and a 1.7V to 2.24V VDDQ supply for the Input/Output pins. An opti	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M58WR064FT60ZB6F	64 Mbit (4Mb x16, Multiple Bank, Burst) 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M58WR064FT/B is a 64 Mbit (4Mbit x16) nonvolatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.7V to 2V VDD supply for the circuitry and a 1.7V to 2.24V VDDQ supply for the Input/Output pins. An opti	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M58WR064FT60ZB6T	64 Mbit (4Mb x16, Multiple Bank, Burst) 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M58WR064FT/B is a 64 Mbit (4Mbit x16) nonvolatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.7V to 2V VDD supply for the circuitry and a 1.7V to 2.24V VDDQ supply for the Input/Output pins. An opti	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M58WR064FT70ZB6	64 Mbit (4Mb x16, Multiple Bank, Burst) 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M58WR064FT/B is a 64 Mbit (4Mbit x16) nonvolatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.7V to 2V VDD supply for the circuitry and a 1.7V to 2.24V VDDQ supply for the Input/Output pins. An opti	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M58WR064FT70ZB6E	64 Mbit (4Mb x16, Multiple Bank, Burst) 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M58WR064FT/B is a 64 Mbit (4Mbit x16) nonvolatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.7V to 2V VDD supply for the circuitry and a 1.7V to 2.24V VDDQ supply for the Input/Output pins. An opti	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M58WR064FT70ZB6F	64 Mbit (4Mb x16, Multiple Bank, Burst) 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M58WR064FT/B is a 64 Mbit (4Mbit x16) nonvolatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.7V to 2V VDD supply for the circuitry and a 1.7V to 2.24V VDDQ supply for the Input/Output pins. An opti	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M58WR064FT70ZB6T	64 Mbit (4Mb x16, Multiple Bank, Burst) 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M58WR064FT/B is a 64 Mbit (4Mbit x16) nonvolatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.7V to 2V VDD supply for the circuitry and a 1.7V to 2.24V VDDQ supply for the Input/Output pins. An opti	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M58WR064FT80ZB6	64 Mbit (4Mb x16, Multiple Bank, Burst) 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M58WR064FT/B is a 64 Mbit (4Mbit x16) nonvolatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.7V to 2V VDD supply for the circuitry and a 1.7V to 2.24V VDDQ supply for the Input/Output pins. An opti	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M58WR064FT80ZB6E	64 Mbit (4Mb x16, Multiple Bank, Burst) 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M58WR064FT/B is a 64 Mbit (4Mbit x16) nonvolatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.7V to 2V VDD supply for the circuitry and a 1.7V to 2.24V VDDQ supply for the Input/Output pins. An opti	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M58WR064FT80ZB6F	64 Mbit (4Mb x16, Multiple Bank, Burst) 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M58WR064FT/B is a 64 Mbit (4Mbit x16) nonvolatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.7V to 2V VDD supply for the circuitry and a 1.7V to 2.24V VDDQ supply for the Input/Output pins. An opti	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M58WR064FT80ZB6T	64 Mbit (4Mb x16, Multiple Bank, Burst) 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M58WR064FT/B is a 64 Mbit (4Mbit x16) nonvolatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.7V to 2V VDD supply for the circuitry and a 1.7V to 2.24V VDDQ supply for the Input/Output pins. An opti	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M58WR064FTB	64 Mbit (4Mb x16, Multiple Bank, Burst) 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M58WR064FT/B is a 64 Mbit (4Mbit x16) nonvolatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.7V to 2V VDD supply for the circuitry and a 1.7V to 2.24V VDDQ supply for the Input/Output pins. An opti	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M58WR064F-ZB	64 Mbit (4Mb x16, Multiple Bank, Burst) 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M58WR064FT/B is a 64 Mbit (4Mbit x16) nonvolatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.7V to 2V VDD supply for the circuitry and a 1.7V to 2.24V VDDQ supply for the Input/Output pins. An opti	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M58WR064F-ZBE	64 Mbit (4Mb x16, Multiple Bank, Burst) 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M58WR064FT/B is a 64 Mbit (4Mbit x16) nonvolatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.7V to 2V VDD supply for the circuitry and a 1.7V to 2.24V VDDQ supply for the Input/Output pins. An opti	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M58WR064F-ZBF	64 Mbit (4Mb x16, Multiple Bank, Burst) 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M58WR064FT/B is a 64 Mbit (4Mbit x16) nonvolatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.7V to 2V VDD supply for the circuitry and a 1.7V to 2.24V VDDQ supply for the Input/Output pins. An opti	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M58WR064F-ZBT	64 Mbit (4Mb x16, Multiple Bank, Burst) 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M58WR064FT/B is a 64 Mbit (4Mbit x16) nonvolatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.7V to 2V VDD supply for the circuitry and a 1.7V to 2.24V VDDQ supply for the Input/Output pins. An opti	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M58WR064T	64 Mbit (4Mb x 16, Multiple Bank, Burst ) 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M58WR064 is a 64 Mbit (4Mbit x16) non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2.2V VDD supply for the circuitry and a 1.65V to 3.3V VDDQ supply for the Input/Output pins. An opti	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M58WR064T100ZB6T	64 Mbit (4Mb x 16, Multiple Bank, Burst ) 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M58WR064 is a 64 Mbit (4Mbit x16) non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2.2V VDD supply for the circuitry and a 1.65V to 3.3V VDDQ supply for the Input/Output pins. An opti	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M58WR064T70ZB6T	64 Mbit (4Mb x 16, Multiple Bank, Burst ) 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M58WR064 is a 64 Mbit (4Mbit x16) non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2.2V VDD supply for the circuitry and a 1.65V to 3.3V VDDQ supply for the Input/Output pins. An opti	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M58WR064T85ZB6T	64 Mbit (4Mb x 16, Multiple Bank, Burst ) 1.8V Supply Flash Memory SUMMARY DESCRIPTION The M58WR064 is a 64 Mbit (4Mbit x16) non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2.2V VDD supply for the circuitry and a 1.65V to 3.3V VDDQ supply for the Input/Output pins. An opti	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M58WR016KL	16- or 32-Mbit (횞16, Mux I/O, Multiple Bank, Burst) 1.8 V supply Flash memories 文件：80.48 Kbytes Page：10 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M58WR016KL	16- or 32-Mbit (×16, Mux I/O, Multiple Bank, Burst) 1.8 V supply Flash memories	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M58WR016KL	16-, 32- and 64-Mbit (x 16, Mux I/O, Multiple Bank, Burst) 1.8 V supply Flash memories 文件：2.33454 Mbytes Page：123 Pages	NUMONYX	NUMONYX
M58WR016KL60ZA6E	16-, 32- and 64-Mbit (x 16, Mux I/O, Multiple Bank, Burst) 1.8 V supply Flash memories 文件：2.33454 Mbytes Page：123 Pages	NUMONYX	NUMONYX
M58WR016KL60ZA6E	16- or 32-Mbit (횞16, Mux I/O, Multiple Bank, Burst) 1.8 V supply Flash memories 文件：80.48 Kbytes Page：10 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M58WR016KL60ZA6U	16- or 32-Mbit (횞16, Mux I/O, Multiple Bank, Burst) 1.8 V supply Flash memories 文件：80.48 Kbytes Page：10 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M58WR016KL60ZA6U	16-, 32- and 64-Mbit (x 16, Mux I/O, Multiple Bank, Burst) 1.8 V supply Flash memories 文件：2.33454 Mbytes Page：123 Pages	NUMONYX	NUMONYX
M58WR016KL70ZA6E	16-, 32- and 64-Mbit (x 16, Mux I/O, Multiple Bank, Burst) 1.8 V supply Flash memories 文件：2.33454 Mbytes Page：123 Pages	NUMONYX	NUMONYX
M58WR016KL70ZA6E	16- or 32-Mbit (횞16, Mux I/O, Multiple Bank, Burst) 1.8 V supply Flash memories 文件：80.48 Kbytes Page：10 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M58WR016KL70ZA6U	16- or 32-Mbit (횞16, Mux I/O, Multiple Bank, Burst) 1.8 V supply Flash memories 文件：80.48 Kbytes Page：10 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS

M58WR0产品属性

类型
描述
型号
M58WR0
制造商
NUMONYX
制造商全称
Numonyx B.V
功能描述
16-, 32- and 64-Mbit(x 16, Mux I/O, Multiple Bank, Burst) 1.8 V supply Flash memories

M58WR0供应商更多...

更新时间：2025-12-26 13:54:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市明嘉莱科技有限公司	M58WR064FU70ZB6U	ST/意法	25+	PBFREE	880000	明嘉莱只做原装正品现货	询价
深圳市科恒伟业电子有限公司	M58WR064FB70ZB6	ST/意法	2450+	BGA	8850	只做原装正品假一赔十为客户做到零风险!!	询价
深圳市一线半导体有限公司	M58WR064FB70ZB6F	ST	24+	QFN	2985		询价
深圳市弘为电子有限公司	M58WR064H870ZB6	ST	24+	BGA	210	原装现货假一罚十	询价
深圳市宇创芯科技有限公司	M58WR064FB70ZB6	ST/意法	24+	BGA	9600	原装现货,优势供应,支持实单!	询价
深圳市盈慧通电子有限公司	M58WR064HB70ZB6	ST	2511	BGA	16900	电子元器件采购降本30%!原厂直采,砍掉中间差价	询价
深圳市赛美科科技有限公司	M58WR064FB70ZB6F	ST		QFN	68500	一级代理原装正品假一罚十价格优势长期供货	询价
深圳市腾亿芯科技有限公司	M58WR064HB70ZB6	ST	25+	BGA	16900	原装，请咨询	询价
深圳市得捷芯城科技有限公司	M58WR064FB60ZB6F	ST/意法	24+	NA/	3743	原装现货,当天可交货,原型号开票	询价
贸泽芯城（深圳）电子科技有限公司	M58WR064FB60ZB6	TNTEL	23+	BGA	3000	一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、	询价

M58WR0芯片相关品牌

M58WR0规格书下载地址

M58WR0参数引脚图相关

M58WR0数据表相关新闻

M5838
M5838,全新.当天发货0755-82732291当天发货或门市自取. QQ：1755232575 /QQ：1157611585，微信号:87680558.
2021-4-12
M5836
M5836,全新.当天发货0755-82732291当天发货或门市自取. QQ：1755232575 /QQ：1157611585，微信号:87680558.
2021-4-12
M62342HP
https://hch01.114ic.com/
2020-11-13
M61880FP
https://hch01.114ic.com/
2020-11-13
M5677-ALAA 进口原装，主营军工级IC
M5677-ALAA ALI，ALTERA（阿尔特拉）， ADI亚德诺，军工级IC专业优势渠道
2020-7-13
M61RB，M61SAL108B，M62216FP，M62339FP
M61RB，M61SA L108B，M62216FP，M62339FP
2020-1-7

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M58WR0产品属性

M58WR0供应商更多...

M58WR0芯片相关品牌

M58WR0规格书下载地址

M58WR0参数引脚图相关

M58WR0数据表相关新闻

M5838

M5836

M62342HP

M61880FP

M5677-ALAA 进口原装，主营军工级IC

M61RB，M61SAL108B，M62216FP，M62339FP

DdatasheetPDF页码索引