您好,欢迎来到114ic资料网！

芯片资料
  • 芯片资料
  • 库存查询
  • 行业新闻
  • 生产厂家
  • 替换型号
  • 晶体管

位置：首页 > IC中文资料第6429页 > M58LW064

型号 功能描述 生产厂家&企业 LOGO 操作
M58LW064

64Mbitx16andx16/x32,BlockEraseLowVoltageFlashMemories

DESCRIPTION TheM58LW064isanon-volatileFlashmemorythatmaybeerasedelectricallyattheblocklevelandprogrammedin-systemona16Wordor8Double-Wordbasisusinga2.7Vto3.6Vsupplyforthecircuitandasupplydownto1.8VfortheInputandOutputbuffers.TheM58LW064Aisorganise

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体（ST）集团

STMICROELECTRONICS
M58LW064A

64Mbitx16andx16/x32,BlockEraseLowVoltageFlashMemories

DESCRIPTION TheM58LW064isanon-volatileFlashmemorythatmaybeerasedelectricallyattheblocklevelandprogrammedin-systemona16Wordor8Double-Wordbasisusinga2.7Vto3.6Vsupplyforthecircuitandasupplydownto1.8VfortheInputandOutputbuffers.TheM58LW064Aisorganise

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体（ST）集团

STMICROELECTRONICS
M58LW064A150NF1T

64Mbitx16andx16/x32,BlockEraseLowVoltageFlashMemories

DESCRIPTION TheM58LW064isanon-volatileFlashmemorythatmaybeerasedelectricallyattheblocklevelandprogrammedin-systemona16Wordor8Double-Wordbasisusinga2.7Vto3.6Vsupplyforthecircuitandasupplydownto1.8VfortheInputandOutputbuffers.TheM58LW064Aisorganise

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体（ST）集团

STMICROELECTRONICS
M58LW064A150NF6T

64Mbitx16andx16/x32,BlockEraseLowVoltageFlashMemories

DESCRIPTION TheM58LW064isanon-volatileFlashmemorythatmaybeerasedelectricallyattheblocklevelandprogrammedin-systemona16Wordor8Double-Wordbasisusinga2.7Vto3.6Vsupplyforthecircuitandasupplydownto1.8VfortheInputandOutputbuffers.TheM58LW064Aisorganise

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体（ST）集团

STMICROELECTRONICS
M58LW064A150NH1T

64Mbitx16andx16/x32,BlockEraseLowVoltageFlashMemories

DESCRIPTION TheM58LW064isanon-volatileFlashmemorythatmaybeerasedelectricallyattheblocklevelandprogrammedin-systemona16Wordor8Double-Wordbasisusinga2.7Vto3.6Vsupplyforthecircuitandasupplydownto1.8VfortheInputandOutputbuffers.TheM58LW064Aisorganise

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体（ST）集团

STMICROELECTRONICS
M58LW064A150NH6T

64Mbitx16andx16/x32,BlockEraseLowVoltageFlashMemories

DESCRIPTION TheM58LW064isanon-volatileFlashmemorythatmaybeerasedelectricallyattheblocklevelandprogrammedin-systemona16Wordor8Double-Wordbasisusinga2.7Vto3.6Vsupplyforthecircuitandasupplydownto1.8VfortheInputandOutputbuffers.TheM58LW064Aisorganise

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体（ST）集团

STMICROELECTRONICS
M58LW064A150T1T

64Mbitx16andx16/x32,BlockEraseLowVoltageFlashMemories

DESCRIPTION TheM58LW064isanon-volatileFlashmemorythatmaybeerasedelectricallyattheblocklevelandprogrammedin-systemona16Wordor8Double-Wordbasisusinga2.7Vto3.6Vsupplyforthecircuitandasupplydownto1.8VfortheInputandOutputbuffers.TheM58LW064Aisorganise

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体（ST）集团

STMICROELECTRONICS
M58LW064A150T6T

64Mbitx16andx16/x32,BlockEraseLowVoltageFlashMemories

DESCRIPTION TheM58LW064isanon-volatileFlashmemorythatmaybeerasedelectricallyattheblocklevelandprogrammedin-systemona16Wordor8Double-Wordbasisusinga2.7Vto3.6Vsupplyforthecircuitandasupplydownto1.8VfortheInputandOutputbuffers.TheM58LW064Aisorganise

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体（ST）集团

STMICROELECTRONICS
M58LW064A150ZA1T

64Mbitx16andx16/x32,BlockEraseLowVoltageFlashMemories

DESCRIPTION TheM58LW064isanon-volatileFlashmemorythatmaybeerasedelectricallyattheblocklevelandprogrammedin-systemona16Wordor8Double-Wordbasisusinga2.7Vto3.6Vsupplyforthecircuitandasupplydownto1.8VfortheInputandOutputbuffers.TheM58LW064Aisorganise

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体（ST）集团

STMICROELECTRONICS
M58LW064A150ZA6T

64Mbitx16andx16/x32,BlockEraseLowVoltageFlashMemories

DESCRIPTION TheM58LW064isanon-volatileFlashmemorythatmaybeerasedelectricallyattheblocklevelandprogrammedin-systemona16Wordor8Double-Wordbasisusinga2.7Vto3.6Vsupplyforthecircuitandasupplydownto1.8VfortheInputandOutputbuffers.TheM58LW064Aisorganise

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体（ST）集团

STMICROELECTRONICS
M58LW064ANF

64Mbitx16andx16/x32,BlockEraseLowVoltageFlashMemories

DESCRIPTION TheM58LW064isanon-volatileFlashmemorythatmaybeerasedelectricallyattheblocklevelandprogrammedin-systemona16Wordor8Double-Wordbasisusinga2.7Vto3.6Vsupplyforthecircuitandasupplydownto1.8VfortheInputandOutputbuffers.TheM58LW064Aisorganise

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体（ST）集团

STMICROELECTRONICS
M58LW064ANH

64Mbitx16andx16/x32,BlockEraseLowVoltageFlashMemories

DESCRIPTION TheM58LW064isanon-volatileFlashmemorythatmaybeerasedelectricallyattheblocklevelandprogrammedin-systemona16Wordor8Double-Wordbasisusinga2.7Vto3.6Vsupplyforthecircuitandasupplydownto1.8VfortheInputandOutputbuffers.TheM58LW064Aisorganise

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体（ST）集团

STMICROELECTRONICS
M58LW064AT

64Mbitx16andx16/x32,BlockEraseLowVoltageFlashMemories

DESCRIPTION TheM58LW064isanon-volatileFlashmemorythatmaybeerasedelectricallyattheblocklevelandprogrammedin-systemona16Wordor8Double-Wordbasisusinga2.7Vto3.6Vsupplyforthecircuitandasupplydownto1.8VfortheInputandOutputbuffers.TheM58LW064Aisorganise

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体（ST）集团

STMICROELECTRONICS
M58LW064AZA

64Mbitx16andx16/x32,BlockEraseLowVoltageFlashMemories

DESCRIPTION TheM58LW064isanon-volatileFlashmemorythatmaybeerasedelectricallyattheblocklevelandprogrammedin-systemona16Wordor8Double-Wordbasisusinga2.7Vto3.6Vsupplyforthecircuitandasupplydownto1.8VfortheInputandOutputbuffers.TheM58LW064Aisorganise

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体（ST）集团

STMICROELECTRONICS
M58LW064B

64Mbitx16andx16/x32,BlockEraseLowVoltageFlashMemories

DESCRIPTION TheM58LW064isanon-volatileFlashmemorythatmaybeerasedelectricallyattheblocklevelandprogrammedin-systemona16Wordor8Double-Wordbasisusinga2.7Vto3.6Vsupplyforthecircuitandasupplydownto1.8VfortheInputandOutputbuffers.TheM58LW064Aisorganise

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体（ST）集团

STMICROELECTRONICS
M58LW064B150NF1T

64Mbitx16andx16/x32,BlockEraseLowVoltageFlashMemories

DESCRIPTION TheM58LW064isanon-volatileFlashmemorythatmaybeerasedelectricallyattheblocklevelandprogrammedin-systemona16Wordor8Double-Wordbasisusinga2.7Vto3.6Vsupplyforthecircuitandasupplydownto1.8VfortheInputandOutputbuffers.TheM58LW064Aisorganise

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体（ST）集团

STMICROELECTRONICS
M58LW064B150NF6T

64Mbitx16andx16/x32,BlockEraseLowVoltageFlashMemories

DESCRIPTION TheM58LW064isanon-volatileFlashmemorythatmaybeerasedelectricallyattheblocklevelandprogrammedin-systemona16Wordor8Double-Wordbasisusinga2.7Vto3.6Vsupplyforthecircuitandasupplydownto1.8VfortheInputandOutputbuffers.TheM58LW064Aisorganise

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体（ST）集团

STMICROELECTRONICS
M58LW064B150NH1T

64Mbitx16andx16/x32,BlockEraseLowVoltageFlashMemories

DESCRIPTION TheM58LW064isanon-volatileFlashmemorythatmaybeerasedelectricallyattheblocklevelandprogrammedin-systemona16Wordor8Double-Wordbasisusinga2.7Vto3.6Vsupplyforthecircuitandasupplydownto1.8VfortheInputandOutputbuffers.TheM58LW064Aisorganise

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体（ST）集团

STMICROELECTRONICS
M58LW064B150NH6T

64Mbitx16andx16/x32,BlockEraseLowVoltageFlashMemories

DESCRIPTION TheM58LW064isanon-volatileFlashmemorythatmaybeerasedelectricallyattheblocklevelandprogrammedin-systemona16Wordor8Double-Wordbasisusinga2.7Vto3.6Vsupplyforthecircuitandasupplydownto1.8VfortheInputandOutputbuffers.TheM58LW064Aisorganise

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体（ST）集团

STMICROELECTRONICS
M58LW064B150T1T

64Mbitx16andx16/x32,BlockEraseLowVoltageFlashMemories

DESCRIPTION TheM58LW064isanon-volatileFlashmemorythatmaybeerasedelectricallyattheblocklevelandprogrammedin-systemona16Wordor8Double-Wordbasisusinga2.7Vto3.6Vsupplyforthecircuitandasupplydownto1.8VfortheInputandOutputbuffers.TheM58LW064Aisorganise

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体（ST）集团

STMICROELECTRONICS
M58LW064B150T6T

64Mbitx16andx16/x32,BlockEraseLowVoltageFlashMemories

DESCRIPTION TheM58LW064isanon-volatileFlashmemorythatmaybeerasedelectricallyattheblocklevelandprogrammedin-systemona16Wordor8Double-Wordbasisusinga2.7Vto3.6Vsupplyforthecircuitandasupplydownto1.8VfortheInputandOutputbuffers.TheM58LW064Aisorganise

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体（ST）集团

STMICROELECTRONICS
M58LW064B150ZA1T

64Mbitx16andx16/x32,BlockEraseLowVoltageFlashMemories

DESCRIPTION TheM58LW064isanon-volatileFlashmemorythatmaybeerasedelectricallyattheblocklevelandprogrammedin-systemona16Wordor8Double-Wordbasisusinga2.7Vto3.6Vsupplyforthecircuitandasupplydownto1.8VfortheInputandOutputbuffers.TheM58LW064Aisorganise

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体（ST）集团

STMICROELECTRONICS
M58LW064B150ZA6T

64Mbitx16andx16/x32,BlockEraseLowVoltageFlashMemories

DESCRIPTION TheM58LW064isanon-volatileFlashmemorythatmaybeerasedelectricallyattheblocklevelandprogrammedin-systemona16Wordor8Double-Wordbasisusinga2.7Vto3.6Vsupplyforthecircuitandasupplydownto1.8VfortheInputandOutputbuffers.TheM58LW064Aisorganise

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体（ST）集团

STMICROELECTRONICS
M58LW064BNF

64Mbitx16andx16/x32,BlockEraseLowVoltageFlashMemories

DESCRIPTION TheM58LW064isanon-volatileFlashmemorythatmaybeerasedelectricallyattheblocklevelandprogrammedin-systemona16Wordor8Double-Wordbasisusinga2.7Vto3.6Vsupplyforthecircuitandasupplydownto1.8VfortheInputandOutputbuffers.TheM58LW064Aisorganise

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体（ST）集团

STMICROELECTRONICS
M58LW064BNH

64Mbitx16andx16/x32,BlockEraseLowVoltageFlashMemories

DESCRIPTION TheM58LW064isanon-volatileFlashmemorythatmaybeerasedelectricallyattheblocklevelandprogrammedin-systemona16Wordor8Double-Wordbasisusinga2.7Vto3.6Vsupplyforthecircuitandasupplydownto1.8VfortheInputandOutputbuffers.TheM58LW064Aisorganise

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体（ST）集团

STMICROELECTRONICS
M58LW064BT

64Mbitx16andx16/x32,BlockEraseLowVoltageFlashMemories

DESCRIPTION TheM58LW064isanon-volatileFlashmemorythatmaybeerasedelectricallyattheblocklevelandprogrammedin-systemona16Wordor8Double-Wordbasisusinga2.7Vto3.6Vsupplyforthecircuitandasupplydownto1.8VfortheInputandOutputbuffers.TheM58LW064Aisorganise

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体（ST）集团

STMICROELECTRONICS
M58LW064BZA

64Mbitx16andx16/x32,BlockEraseLowVoltageFlashMemories

DESCRIPTION TheM58LW064isanon-volatileFlashmemorythatmaybeerasedelectricallyattheblocklevelandprogrammedin-systemona16Wordor8Double-Wordbasisusinga2.7Vto3.6Vsupplyforthecircuitandasupplydownto1.8VfortheInputandOutputbuffers.TheM58LW064Aisorganise

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体（ST）集团

STMICROELECTRONICS
M58LW064C

64Mbit(4Mbx16,UniformBlock,Burst)3VSupplyFlashMemory

SUMMARYDESCRIPTION M58LW064Cisa64Mbit(4Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7Vto3.6V)coresupply.Onpower-upthememorydefaultstoReadmodewithanasynchronousbuswhereitcanbereadi

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体（ST）集团

STMICROELECTRONICS
M58LW064D

64Mbit(8Mbx8,4Mbx16,UniformBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM58LW064Disa64Mbit(8Mbx8or4Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7Vto3.6V)coresupply. FEATURESSUMMARY ■WIDEx8orx16DATABUSforHIGHBANDWIDTH ■SUPPLYVOL

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体（ST）集团

STMICROELECTRONICS
M58LW064D110N1T

64Mbit(8Mbx8,4Mbx16,UniformBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM58LW064Disa64Mbit(8Mbx8or4Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7Vto3.6V)coresupply. FEATURESSUMMARY ■WIDEx8orx16DATABUSforHIGHBANDWIDTH ■SUPPLYVOL

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体（ST）集团

STMICROELECTRONICS
M58LW064D110N6T

64Mbit(8Mbx8,4Mbx16,UniformBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM58LW064Disa64Mbit(8Mbx8or4Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7Vto3.6V)coresupply. FEATURESSUMMARY ■WIDEx8orx16DATABUSforHIGHBANDWIDTH ■SUPPLYVOL

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体（ST）集团

STMICROELECTRONICS
M58LW064D110ZA

64Mbit(8Mbx8,4Mbx16,UniformBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM58LW064Disa64Mbit(8Mbx8or4Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7Vto3.6V)coresupply. FEATURESSUMMARY ■WIDEx8orx16DATABUSforHIGHBANDWIDTH ■SUPPLYVOL

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体（ST）集团

STMICROELECTRONICS
M58LW064D110ZA1T

64Mbit(8Mbx8,4Mbx16,UniformBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM58LW064Disa64Mbit(8Mbx8or4Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7Vto3.6V)coresupply. FEATURESSUMMARY ■WIDEx8orx16DATABUSforHIGHBANDWIDTH ■SUPPLYVOL

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体（ST）集团

STMICROELECTRONICS
M58LW064D110ZA6T

64Mbit(8Mbx8,4Mbx16,UniformBlock)3VSupplyFlashMemory

SUMMARYDESCRIPTION TheM58LW064Disa64Mbit(8Mbx8or4Mbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasinglelowvoltage(2.7Vto3.6V)coresupply. FEATURESSUMMARY ■WIDEx8orx16DATABUSforHIGHBANDWIDTH ■SUPPLYVOL

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体（ST）集团

STMICROELECTRONICS
M58LW064D

64Mbit(8Mbx8,4Mbx16,UniformBlock)3VSupplyFlashMemory

文件：783.43 Kbytes Page：50 Pages

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体（ST）集团

STMICROELECTRONICS
M58LW064D110N1

64Mbit(8Mbx8,4Mbx16,UniformBlock)3VSupplyFlashMemory

文件：783.43 Kbytes Page：50 Pages

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体（ST）集团

STMICROELECTRONICS
M58LW064D110N1E

64Mbit(8Mbx8,4Mbx16,UniformBlock)3VSupplyFlashMemory

文件：783.43 Kbytes Page：50 Pages

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体（ST）集团

STMICROELECTRONICS
M58LW064D110N1F

64Mbit(8Mbx8,4Mbx16,UniformBlock)3VSupplyFlashMemory

文件：783.43 Kbytes Page：50 Pages

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体（ST）集团

STMICROELECTRONICS
M58LW064D110N1T

64Mbit(8Mbx8,4Mbx16,UniformBlock)3VSupplyFlashMemory

文件：783.43 Kbytes Page：50 Pages

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体（ST）集团

STMICROELECTRONICS
M58LW064D110N6

64Mbit(8Mbx8,4Mbx16,UniformBlock)3VSupplyFlashMemory

文件：783.43 Kbytes Page：50 Pages

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体（ST）集团

STMICROELECTRONICS
M58LW064D110N6

封装/外壳：56-TFSOP（0.724"，18.40mm 宽） 包装：管件 描述：IC FLASH 64MBIT PARALLEL 56TSOP 集成电路（IC） 存储器

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体（ST）集团

STMICROELECTRONICS
M58LW064D110N6E

64Mbit(8Mbx8,4Mbx16,UniformBlock)3VSupplyFlashMemory

文件：783.43 Kbytes Page：50 Pages

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体（ST）集团

STMICROELECTRONICS
M58LW064D110N6F

64Mbit(8Mbx8,4Mbx16,UniformBlock)3VSupplyFlashMemory

文件：783.43 Kbytes Page：50 Pages

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体（ST）集团

STMICROELECTRONICS
M58LW064D110N6T

64Mbit(8Mbx8,4Mbx16,UniformBlock)3VSupplyFlashMemory

文件：783.43 Kbytes Page：50 Pages

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体（ST）集团

STMICROELECTRONICS
M58LW064D110ZA1

64Mbit(8Mbx8,4Mbx16,UniformBlock)3VSupplyFlashMemory

文件：783.43 Kbytes Page：50 Pages

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体（ST）集团

STMICROELECTRONICS
M58LW064D110ZA1E

64Mbit(8Mbx8,4Mbx16,UniformBlock)3VSupplyFlashMemory

文件：783.43 Kbytes Page：50 Pages

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体（ST）集团

STMICROELECTRONICS
M58LW064D110ZA1F

64Mbit(8Mbx8,4Mbx16,UniformBlock)3VSupplyFlashMemory

文件：783.43 Kbytes Page：50 Pages

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体（ST）集团

STMICROELECTRONICS
M58LW064D110ZA1T

64Mbit(8Mbx8,4Mbx16,UniformBlock)3VSupplyFlashMemory

文件：783.43 Kbytes Page：50 Pages

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体（ST）集团

STMICROELECTRONICS
M58LW064D110ZA6

封装/外壳：64-TBGA 包装：管件 描述：IC FLASH 64MBIT PARALLEL 64TBGA 集成电路（IC） 存储器

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体（ST）集团

STMICROELECTRONICS
M58LW064D110ZA6

64Mbit(8Mbx8,4Mbx16,UniformBlock)3VSupplyFlashMemory

文件：783.43 Kbytes Page：50 Pages

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体（ST）集团

STMICROELECTRONICS
M58LW064D110ZA6E

64Mbit(8Mbx8,4Mbx16,UniformBlock)3VSupplyFlashMemory

文件：783.43 Kbytes Page：50 Pages

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体（ST）集团

STMICROELECTRONICS
M58LW064D110ZA6F

64Mbit(8Mbx8,4Mbx16,UniformBlock)3VSupplyFlashMemory

文件：783.43 Kbytes Page：50 Pages

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体（ST）集团

STMICROELECTRONICS
M58LW064D110ZA6T

64Mbit(8Mbx8,4Mbx16,UniformBlock)3VSupplyFlashMemory

文件：783.43 Kbytes Page：50 Pages

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体（ST）集团

STMICROELECTRONICS

M58LW064产品属性

  • 类型

    描述

  • 型号

    M58LW064

  • 制造商

    STMICROELECTRONICS

  • 制造商全称

    STMicroelectronics

  • 功能描述

    64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories

M58LW064供应商更多...

更新时间：2024-5-25 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市杰顺创科技有限公司
M58LW064D110N6P
ST
19+
TSOP56
10770
进口原装现货
询价
上海意淼电子科技有限公司
M58LW064C110N6
AlphaIndustries
23+
SOP
12000
全新原装假一赔十
询价
深圳市纳艾斯科技有限公司
M58LW064D-110N6
ST
2020+
TSOP56
80000
只做自己库存,全新原装进口正品假一赔百,可开13%增
询价
深圳市创盛芯科技有限公司
M58LW064D-110ZA6
NA
22+
6642
原装现货假一赔十
询价
深圳市华睿芯科技有限公司
M58LW064D
ST
23+
BGA
20000
原厂原装正品现货
询价
中天科工半导体（深圳）有限公司
M58LW064E-110N6
ST
20+
TSSOP56
35830
原装优势主营型号-可开原型号增税票
询价
深圳市大联智电子有限公司
M58LW064D-110ZA6
NA
22+
N/A
354000
询价
深圳市赛美科科技有限公司
M58LW064D-110ZA6S
ST
BGA
68500
一级代理 原装正品假一罚十价格优势长期供货
询价
深圳市明嘉莱科技有限公司
M58LW064D-110ZA6S
ST/意法
2004+
NA
880000
明嘉莱只做原装正品现货
询价
中科航电（深圳）电子集团有限公司
M58LW064E-110N6P
ST
TSOP
93480
集团化配单-有更多数量-免费送样-原包装正品现货-正规
询价

M58LW064芯片相关品牌

  • ANACHIP
  • BOTHHAND
  • EUROQUARTZ
  • Honeywell
  • MOLEX8
  • MPS
  • nichicon
  • nxp
  • POWERBOX
  • RECTRON
  • TAI-TECH
  • Winbond

M58LW064规格书下载地址

M58LW064参数引脚图相关

M58LW064数据表相关新闻

  • M5836

    M5836,全新.当天发货0755-82732291当天发货或门市自取.QQ：1755232575/QQ：1157611585，微信号:87680558.

    2021-4-12

  • M5838

    M5838,全新.当天发货0755-82732291当天发货或门市自取.QQ：1755232575/QQ：1157611585，微信号:87680558.

    2021-4-12

  • M62342HP

    https://hch01.114ic.com/

    2020-11-13

  • M61880FP

    https://hch01.114ic.com/

    2020-11-13

  • M5677-ALAA 进口原装，主营军工级IC

    M5677-ALAAALI，ALTERA（阿尔特拉），ADI亚德诺，军工级IC专业优势渠道

    2020-7-13

  • M61RB，M61SAL108B，M62216FP，M62339FP

    M61RB，M61SAL108B，M62216FP，M62339FP

    2020-1-7

DdatasheetPDF页码索引

新数据|IC资料索引|IC关键词|IC库存|IC中文资料|关于我们|联系我们

Copyright © 2003-2024 www.114ic.cn All Rights Reserved 网站备案: 粤ICP备05011613号 粤公网安备 44030402000933号

声明：本站所有资料均来自互联网及网友提供，仅供学习和研究使用，无任何商业目的，版权归原作如有侵权请联系QQ：303638005，本站马上更正

字母索引：ABCDEFGHIJKLMNOPQRSTUVWXYZ0123456789

深圳市市场监督管理局企业主体身份公示