位置：首页 > IC中文资料第6429页 > M58LW064
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
M58LW064 | 64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories DESCRIPTION The M58LW064 is a non-volatile Flash memory that may be erased electrically at the block level and programmed in-system on a 16 Word or 8 Double-Word basis using a 2.7V to 3.6V supply for the circuit and a supply down to 1.8V for the Input and Output buffers. The M58LW064A is organise | STMICROELECTRONICS 意法半导体 |   | |
M58LW064 | 64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories | STMICROELECTRONICS 意法半导体 | | |
64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories DESCRIPTION The M58LW064 is a non-volatile Flash memory that may be erased electrically at the block level and programmed in-system on a 16 Word or 8 Double-Word basis using a 2.7V to 3.6V supply for the circuit and a supply down to 1.8V for the Input and Output buffers. The M58LW064A is organise | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories DESCRIPTION The M58LW064 is a non-volatile Flash memory that may be erased electrically at the block level and programmed in-system on a 16 Word or 8 Double-Word basis using a 2.7V to 3.6V supply for the circuit and a supply down to 1.8V for the Input and Output buffers. The M58LW064A is organise | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories DESCRIPTION The M58LW064 is a non-volatile Flash memory that may be erased electrically at the block level and programmed in-system on a 16 Word or 8 Double-Word basis using a 2.7V to 3.6V supply for the circuit and a supply down to 1.8V for the Input and Output buffers. The M58LW064A is organise | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories DESCRIPTION The M58LW064 is a non-volatile Flash memory that may be erased electrically at the block level and programmed in-system on a 16 Word or 8 Double-Word basis using a 2.7V to 3.6V supply for the circuit and a supply down to 1.8V for the Input and Output buffers. The M58LW064A is organise | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories DESCRIPTION The M58LW064 is a non-volatile Flash memory that may be erased electrically at the block level and programmed in-system on a 16 Word or 8 Double-Word basis using a 2.7V to 3.6V supply for the circuit and a supply down to 1.8V for the Input and Output buffers. The M58LW064A is organise | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories DESCRIPTION The M58LW064 is a non-volatile Flash memory that may be erased electrically at the block level and programmed in-system on a 16 Word or 8 Double-Word basis using a 2.7V to 3.6V supply for the circuit and a supply down to 1.8V for the Input and Output buffers. The M58LW064A is organise | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories DESCRIPTION The M58LW064 is a non-volatile Flash memory that may be erased electrically at the block level and programmed in-system on a 16 Word or 8 Double-Word basis using a 2.7V to 3.6V supply for the circuit and a supply down to 1.8V for the Input and Output buffers. The M58LW064A is organise | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories DESCRIPTION The M58LW064 is a non-volatile Flash memory that may be erased electrically at the block level and programmed in-system on a 16 Word or 8 Double-Word basis using a 2.7V to 3.6V supply for the circuit and a supply down to 1.8V for the Input and Output buffers. The M58LW064A is organise | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories DESCRIPTION The M58LW064 is a non-volatile Flash memory that may be erased electrically at the block level and programmed in-system on a 16 Word or 8 Double-Word basis using a 2.7V to 3.6V supply for the circuit and a supply down to 1.8V for the Input and Output buffers. The M58LW064A is organise | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories DESCRIPTION The M58LW064 is a non-volatile Flash memory that may be erased electrically at the block level and programmed in-system on a 16 Word or 8 Double-Word basis using a 2.7V to 3.6V supply for the circuit and a supply down to 1.8V for the Input and Output buffers. The M58LW064A is organise | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories DESCRIPTION The M58LW064 is a non-volatile Flash memory that may be erased electrically at the block level and programmed in-system on a 16 Word or 8 Double-Word basis using a 2.7V to 3.6V supply for the circuit and a supply down to 1.8V for the Input and Output buffers. The M58LW064A is organise | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories DESCRIPTION The M58LW064 is a non-volatile Flash memory that may be erased electrically at the block level and programmed in-system on a 16 Word or 8 Double-Word basis using a 2.7V to 3.6V supply for the circuit and a supply down to 1.8V for the Input and Output buffers. The M58LW064A is organise | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories DESCRIPTION The M58LW064 is a non-volatile Flash memory that may be erased electrically at the block level and programmed in-system on a 16 Word or 8 Double-Word basis using a 2.7V to 3.6V supply for the circuit and a supply down to 1.8V for the Input and Output buffers. The M58LW064A is organise | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories DESCRIPTION The M58LW064 is a non-volatile Flash memory that may be erased electrically at the block level and programmed in-system on a 16 Word or 8 Double-Word basis using a 2.7V to 3.6V supply for the circuit and a supply down to 1.8V for the Input and Output buffers. The M58LW064A is organise | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories DESCRIPTION The M58LW064 is a non-volatile Flash memory that may be erased electrically at the block level and programmed in-system on a 16 Word or 8 Double-Word basis using a 2.7V to 3.6V supply for the circuit and a supply down to 1.8V for the Input and Output buffers. The M58LW064A is organise | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories DESCRIPTION The M58LW064 is a non-volatile Flash memory that may be erased electrically at the block level and programmed in-system on a 16 Word or 8 Double-Word basis using a 2.7V to 3.6V supply for the circuit and a supply down to 1.8V for the Input and Output buffers. The M58LW064A is organise | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories DESCRIPTION The M58LW064 is a non-volatile Flash memory that may be erased electrically at the block level and programmed in-system on a 16 Word or 8 Double-Word basis using a 2.7V to 3.6V supply for the circuit and a supply down to 1.8V for the Input and Output buffers. The M58LW064A is organise | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories DESCRIPTION The M58LW064 is a non-volatile Flash memory that may be erased electrically at the block level and programmed in-system on a 16 Word or 8 Double-Word basis using a 2.7V to 3.6V supply for the circuit and a supply down to 1.8V for the Input and Output buffers. The M58LW064A is organise | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories DESCRIPTION The M58LW064 is a non-volatile Flash memory that may be erased electrically at the block level and programmed in-system on a 16 Word or 8 Double-Word basis using a 2.7V to 3.6V supply for the circuit and a supply down to 1.8V for the Input and Output buffers. The M58LW064A is organise | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories DESCRIPTION The M58LW064 is a non-volatile Flash memory that may be erased electrically at the block level and programmed in-system on a 16 Word or 8 Double-Word basis using a 2.7V to 3.6V supply for the circuit and a supply down to 1.8V for the Input and Output buffers. The M58LW064A is organise | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories DESCRIPTION The M58LW064 is a non-volatile Flash memory that may be erased electrically at the block level and programmed in-system on a 16 Word or 8 Double-Word basis using a 2.7V to 3.6V supply for the circuit and a supply down to 1.8V for the Input and Output buffers. The M58LW064A is organise | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories DESCRIPTION The M58LW064 is a non-volatile Flash memory that may be erased electrically at the block level and programmed in-system on a 16 Word or 8 Double-Word basis using a 2.7V to 3.6V supply for the circuit and a supply down to 1.8V for the Input and Output buffers. The M58LW064A is organise | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories DESCRIPTION The M58LW064 is a non-volatile Flash memory that may be erased electrically at the block level and programmed in-system on a 16 Word or 8 Double-Word basis using a 2.7V to 3.6V supply for the circuit and a supply down to 1.8V for the Input and Output buffers. The M58LW064A is organise | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories DESCRIPTION The M58LW064 is a non-volatile Flash memory that may be erased electrically at the block level and programmed in-system on a 16 Word or 8 Double-Word basis using a 2.7V to 3.6V supply for the circuit and a supply down to 1.8V for the Input and Output buffers. The M58LW064A is organise | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories DESCRIPTION The M58LW064 is a non-volatile Flash memory that may be erased electrically at the block level and programmed in-system on a 16 Word or 8 Double-Word basis using a 2.7V to 3.6V supply for the circuit and a supply down to 1.8V for the Input and Output buffers. The M58LW064A is organise | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories DESCRIPTION The M58LW064 is a non-volatile Flash memory that may be erased electrically at the block level and programmed in-system on a 16 Word or 8 Double-Word basis using a 2.7V to 3.6V supply for the circuit and a supply down to 1.8V for the Input and Output buffers. The M58LW064A is organise | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit (4Mb x16, Uniform Block, Burst) 3V Supply Flash Memory SUMMARY DESCRIPTION M58LW064C is a 64 Mbit (4Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7V to 3.6V) core supply. On power-up the memory defaults to Read mode with an asynchronous bus where it can be read i | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit (8Mb x8, 4Mb x16, Uniform Block) 3V Supply Flash Memory SUMMARY DESCRIPTION The M58LW064D is a 64 Mbit (8Mb x 8 or 4Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7V to 3.6V) core supply. FEATURES SUMMARY ■ WIDE x8 or x16 DATA BUS for HIGH BANDWIDTH ■ SUPPLY VOL | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit (8Mb x8, 4Mb x16, Uniform Block) 3V Supply Flash Memory SUMMARY DESCRIPTION The M58LW064D is a 64 Mbit (8Mb x 8 or 4Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7V to 3.6V) core supply. FEATURES SUMMARY ■ WIDE x8 or x16 DATA BUS for HIGH BANDWIDTH ■ SUPPLY VOL | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit (8Mb x8, 4Mb x16, Uniform Block) 3V Supply Flash Memory SUMMARY DESCRIPTION The M58LW064D is a 64 Mbit (8Mb x 8 or 4Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7V to 3.6V) core supply. FEATURES SUMMARY ■ WIDE x8 or x16 DATA BUS for HIGH BANDWIDTH ■ SUPPLY VOL | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit (8Mb x8, 4Mb x16, Uniform Block) 3V Supply Flash Memory SUMMARY DESCRIPTION The M58LW064D is a 64 Mbit (8Mb x 8 or 4Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7V to 3.6V) core supply. FEATURES SUMMARY ■ WIDE x8 or x16 DATA BUS for HIGH BANDWIDTH ■ SUPPLY VOL | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit (8Mb x8, 4Mb x16, Uniform Block) 3V Supply Flash Memory SUMMARY DESCRIPTION The M58LW064D is a 64 Mbit (8Mb x 8 or 4Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7V to 3.6V) core supply. FEATURES SUMMARY ■ WIDE x8 or x16 DATA BUS for HIGH BANDWIDTH ■ SUPPLY VOL | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit (8Mb x8, 4Mb x16, Uniform Block) 3V Supply Flash Memory SUMMARY DESCRIPTION The M58LW064D is a 64 Mbit (8Mb x 8 or 4Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7V to 3.6V) core supply. FEATURES SUMMARY ■ WIDE x8 or x16 DATA BUS for HIGH BANDWIDTH ■ SUPPLY VOL | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit (4Mb x16, Uniform Block, Burst) 3V Supply Flash Memory | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit (8Mb x8, 4Mb x16, Uniform Block) 3V Supply Flash Memory | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit (8Mb x8, 4Mb x16, Uniform Block) 3V Supply Flash Memory 文件：783.43 Kbytes Page：50 Pages | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit (8Mb x8, 4Mb x16, Uniform Block) 3V Supply Flash Memory 文件：783.43 Kbytes Page：50 Pages | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit (8Mb x8, 4Mb x16, Uniform Block) 3V Supply Flash Memory 文件：783.43 Kbytes Page：50 Pages | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit (8Mb x8, 4Mb x16, Uniform Block) 3V Supply Flash Memory 文件：783.43 Kbytes Page：50 Pages | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit (8Mb x8, 4Mb x16, Uniform Block) 3V Supply Flash Memory 文件：783.43 Kbytes Page：50 Pages | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit (8Mb x8, 4Mb x16, Uniform Block) 3V Supply Flash Memory 文件：783.43 Kbytes Page：50 Pages | STMICROELECTRONICS 意法半导体 | | ||
封装/外壳：56-TFSOP（0.724"，18.40mm 宽） 包装：管件 描述：IC FLASH 64MBIT PARALLEL 56TSOP 集成电路（IC） 存储器 | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit (8Mb x8, 4Mb x16, Uniform Block) 3V Supply Flash Memory 文件：783.43 Kbytes Page：50 Pages | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit (8Mb x8, 4Mb x16, Uniform Block) 3V Supply Flash Memory 文件：783.43 Kbytes Page：50 Pages | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit (8Mb x8, 4Mb x16, Uniform Block) 3V Supply Flash Memory 文件：783.43 Kbytes Page：50 Pages | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit (8Mb x8, 4Mb x16, Uniform Block) 3V Supply Flash Memory 文件：783.43 Kbytes Page：50 Pages | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit (8Mb x8, 4Mb x16, Uniform Block) 3V Supply Flash Memory 文件：783.43 Kbytes Page：50 Pages | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit (8Mb x8, 4Mb x16, Uniform Block) 3V Supply Flash Memory 文件：783.43 Kbytes Page：50 Pages | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit (8Mb x8, 4Mb x16, Uniform Block) 3V Supply Flash Memory 文件：783.43 Kbytes Page：50 Pages | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit (8Mb x8, 4Mb x16, Uniform Block) 3V Supply Flash Memory 文件：783.43 Kbytes Page：50 Pages | STMICROELECTRONICS 意法半导体 | | ||
封装/外壳：64-TBGA 包装：管件 描述：IC FLASH 64MBIT PARALLEL 64TBGA 集成电路（IC） 存储器 | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit (8Mb x8, 4Mb x16, Uniform Block) 3V Supply Flash Memory 文件：783.43 Kbytes Page：50 Pages | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit (8Mb x8, 4Mb x16, Uniform Block) 3V Supply Flash Memory 文件：783.43 Kbytes Page：50 Pages | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit (8Mb x8, 4Mb x16, Uniform Block) 3V Supply Flash Memory 文件：783.43 Kbytes Page：50 Pages | STMICROELECTRONICS 意法半导体 | |
M58LW064产品属性
- 类型
描述
- 型号
M58LW064
- 制造商
STMICROELECTRONICS
- 制造商全称
STMicroelectronics
- 功能描述
64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
AlphaIndustries |
23+ |
SOP |
12000 |
全新原装假一赔十 |
|||
ST |
20+ |
TSSOP56 |
35830 |
原装优势主营型号-可开原型号增税票 |
|||
ST |
23+ |
TSOP-56 |
65480 |
||||
SST |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
||||
ST |
22+ |
TSOP |
12245 |
现货,原厂原装假一罚十! |
|||
STM |
25+ |
798 |
全新原装!优势库存热卖中! |
||||
ST |
TSOP56 |
91 |
全新原装进口自己库存优势 |
||||
ST/意法 |
2450+ |
BGA |
9485 |
只做原装正品现货或订货假一赔十! |
|||
ST |
2138+ |
BGA |
8960 |
专营BGA,QFP原装现货,假一赔十 |
|||
ST |
25+ |
TSOP56 |
3000 |
全新原装、诚信经营、公司现货销售! |
M58LW064规格书下载地址
M58LW064参数引脚图相关
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- M58LW064B150ZA6T
- M58LW064B150ZA1T
- M58LW064B150T6T
- M58LW064B150T1T
- M58LW064B150NH6T
- M58LW064B150NH1T
- M58LW064B150NF6T
- M58LW064B150NF1T
- M58LW064B
- M58LW064A150ZA6T
- M58LW064A150ZA1T
- M58LW064A150T6T
- M58LW064A150T1T
- M58LW064A150NH6T
- M58LW064A150NH1T
- M58LW064A150NF6T
- M58LW064A150NF1T
- M58LW064A150N1
- M58LW064A
- M58LW032D90ZA6
- M58LW032D90ZA1F
- M58LW032D90ZA1E
- M58LW032D90ZA1
- M58LW032D90N6T
- M58LW032D90N6F
- M58LW032D90N6E
- M58LW032D90N6
- M58LW032D90N1T
- M58LW032D90N1F
- M58LW032D90N1E
- M58LW032D90N1
- M58LW032D110ZA6T
- M58LW032D110ZA6F
- M58LW032D110ZA6E
- M58LW032D110ZA6
- M58LW032D110ZA1T
- M58LW032D110ZA1F
- M58LW032D110ZA1E
- M58LW032D110ZA1
- M58-LN
- M58-LE
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DdatasheetPDF页码索引
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