位置：首页 > IC中文资料第11737页 > M58LW064BNF
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
M58LW064BNF | 64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories DESCRIPTION The M58LW064 is a non-volatile Flash memory that may be erased electrically at the block level and programmed in-system on a 16 Word or 8 Double-Word basis using a 2.7V to 3.6V supply for the circuit and a supply down to 1.8V for the Input and Output buffers. The M58LW064A is organise | STMICROELECTRONICS 意法半导体 |   | |
64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories DESCRIPTION The M58LW064 is a non-volatile Flash memory that may be erased electrically at the block level and programmed in-system on a 16 Word or 8 Double-Word basis using a 2.7V to 3.6V supply for the circuit and a supply down to 1.8V for the Input and Output buffers. The M58LW064A is organise | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories DESCRIPTION The M58LW064 is a non-volatile Flash memory that may be erased electrically at the block level and programmed in-system on a 16 Word or 8 Double-Word basis using a 2.7V to 3.6V supply for the circuit and a supply down to 1.8V for the Input and Output buffers. The M58LW064A is organise | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories DESCRIPTION The M58LW064 is a non-volatile Flash memory that may be erased electrically at the block level and programmed in-system on a 16 Word or 8 Double-Word basis using a 2.7V to 3.6V supply for the circuit and a supply down to 1.8V for the Input and Output buffers. The M58LW064A is organise | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories DESCRIPTION The M58LW064 is a non-volatile Flash memory that may be erased electrically at the block level and programmed in-system on a 16 Word or 8 Double-Word basis using a 2.7V to 3.6V supply for the circuit and a supply down to 1.8V for the Input and Output buffers. The M58LW064A is organise | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories DESCRIPTION The M58LW064 is a non-volatile Flash memory that may be erased electrically at the block level and programmed in-system on a 16 Word or 8 Double-Word basis using a 2.7V to 3.6V supply for the circuit and a supply down to 1.8V for the Input and Output buffers. The M58LW064A is organise | STMICROELECTRONICS 意法半导体 | |
M58LW064BNF产品属性
- 类型
描述
- 型号
M58LW064BNF
- 制造商
STMICROELECTRONICS
- 制造商全称
STMicroelectronics
- 功能描述
64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST/意法 |
23+ |
BGA |
89630 |
当天发货全新原装现货 |
|||
ST |
18+ |
BGA |
24720 |
全新原装现货,可出样品,可开增值税发票 |
|||
ST |
TSOP56 |
0724+ |
334 |
全新原装进口自己库存优势 |
|||
ST |
BGA |
625 |
|||||
AlphaIndustries |
23+ |
SOP |
12000 |
全新原装假一赔十 |
|||
ST |
01+ |
BGA |
125 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
ST |
24+ |
BGA |
20000 |
全新原厂原装，进口正品现货，正规渠道可含税！！ |
|||
ST/意法 |
2450+ |
TSSOP-56 |
9850 |
只做原厂原装正品现货或订货假一赔十! |
|||
ST |
25+ |
BGA |
4500 |
全新原装、诚信经营、公司现货销售! |
|||
ST |
25+ |
BGA |
6500 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
M58LW064BNF规格书下载地址
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DdatasheetPDF页码索引
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