型号 功能描述 生产厂家 企业 LOGO 操作
M58LW064A

64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories

DESCRIPTION The M58LW064 is a non-volatile Flash memory that may be erased electrically at the block level and programmed in-system on a 16 Word or 8 Double-Word basis using a 2.7V to 3.6V supply for the circuit and a supply down to 1.8V for the Input and Output buffers. The M58LW064A is organise

STMICROELECTRONICS

意法半导体

64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories

DESCRIPTION The M58LW064 is a non-volatile Flash memory that may be erased electrically at the block level and programmed in-system on a 16 Word or 8 Double-Word basis using a 2.7V to 3.6V supply for the circuit and a supply down to 1.8V for the Input and Output buffers. The M58LW064A is organise

STMICROELECTRONICS

意法半导体

64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories

DESCRIPTION The M58LW064 is a non-volatile Flash memory that may be erased electrically at the block level and programmed in-system on a 16 Word or 8 Double-Word basis using a 2.7V to 3.6V supply for the circuit and a supply down to 1.8V for the Input and Output buffers. The M58LW064A is organise

STMICROELECTRONICS

意法半导体

64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories

DESCRIPTION The M58LW064 is a non-volatile Flash memory that may be erased electrically at the block level and programmed in-system on a 16 Word or 8 Double-Word basis using a 2.7V to 3.6V supply for the circuit and a supply down to 1.8V for the Input and Output buffers. The M58LW064A is organise

STMICROELECTRONICS

意法半导体

64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories

DESCRIPTION The M58LW064 is a non-volatile Flash memory that may be erased electrically at the block level and programmed in-system on a 16 Word or 8 Double-Word basis using a 2.7V to 3.6V supply for the circuit and a supply down to 1.8V for the Input and Output buffers. The M58LW064A is organise

STMICROELECTRONICS

意法半导体

64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories

DESCRIPTION The M58LW064 is a non-volatile Flash memory that may be erased electrically at the block level and programmed in-system on a 16 Word or 8 Double-Word basis using a 2.7V to 3.6V supply for the circuit and a supply down to 1.8V for the Input and Output buffers. The M58LW064A is organise

STMICROELECTRONICS

意法半导体

64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories

DESCRIPTION The M58LW064 is a non-volatile Flash memory that may be erased electrically at the block level and programmed in-system on a 16 Word or 8 Double-Word basis using a 2.7V to 3.6V supply for the circuit and a supply down to 1.8V for the Input and Output buffers. The M58LW064A is organise

STMICROELECTRONICS

意法半导体

64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories

DESCRIPTION The M58LW064 is a non-volatile Flash memory that may be erased electrically at the block level and programmed in-system on a 16 Word or 8 Double-Word basis using a 2.7V to 3.6V supply for the circuit and a supply down to 1.8V for the Input and Output buffers. The M58LW064A is organise

STMICROELECTRONICS

意法半导体

64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories

DESCRIPTION The M58LW064 is a non-volatile Flash memory that may be erased electrically at the block level and programmed in-system on a 16 Word or 8 Double-Word basis using a 2.7V to 3.6V supply for the circuit and a supply down to 1.8V for the Input and Output buffers. The M58LW064A is organise

STMICROELECTRONICS

意法半导体

64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories

DESCRIPTION The M58LW064 is a non-volatile Flash memory that may be erased electrically at the block level and programmed in-system on a 16 Word or 8 Double-Word basis using a 2.7V to 3.6V supply for the circuit and a supply down to 1.8V for the Input and Output buffers. The M58LW064A is organise

STMICROELECTRONICS

意法半导体

64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories

DESCRIPTION The M58LW064 is a non-volatile Flash memory that may be erased electrically at the block level and programmed in-system on a 16 Word or 8 Double-Word basis using a 2.7V to 3.6V supply for the circuit and a supply down to 1.8V for the Input and Output buffers. The M58LW064A is organise

STMICROELECTRONICS

意法半导体

64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories

DESCRIPTION The M58LW064 is a non-volatile Flash memory that may be erased electrically at the block level and programmed in-system on a 16 Word or 8 Double-Word basis using a 2.7V to 3.6V supply for the circuit and a supply down to 1.8V for the Input and Output buffers. The M58LW064A is organise

STMICROELECTRONICS

意法半导体

64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories

DESCRIPTION The M58LW064 is a non-volatile Flash memory that may be erased electrically at the block level and programmed in-system on a 16 Word or 8 Double-Word basis using a 2.7V to 3.6V supply for the circuit and a supply down to 1.8V for the Input and Output buffers. The M58LW064A is organise

STMICROELECTRONICS

意法半导体

64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories

DESCRIPTION The M58LW064 is a non-volatile Flash memory that may be erased electrically at the block level and programmed in-system on a 16 Word or 8 Double-Word basis using a 2.7V to 3.6V supply for the circuit and a supply down to 1.8V for the Input and Output buffers. The M58LW064A is organise

STMICROELECTRONICS

意法半导体

M58LW064A产品属性

  • 类型

    描述

  • 型号

    M58LW064A

  • 制造商

    STMICROELECTRONICS

  • 制造商全称

    STMicroelectronics

  • 功能描述

    64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories

更新时间:2026-3-12 13:30:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
SST
24+
TSOP
486
ST
24+
TSOP
6000
原装现货假一罚十
ST/意法
24+
BGA
9600
原装现货,优势供应,支持实单!
ST
2511
BGA
16900
电子元器件采购降本30%!原厂直采,砍掉中间差价
ST
22+
TSOP
12245
现货,原厂原装假一罚十!
ST/意法
2450+
TSSOP-56
9850
只做原厂原装正品现货或订货假一赔十!
SST
25+
TSOP
4500
全新原装、诚信经营、公司现货销售!
ST
25+
BGA
16900
原装,请咨询
ST/意法
23+
TSSOP
8000
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、
ST
TSSOP
68500
一级代理 原装正品假一罚十价格优势长期供货

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