位置：首页 > IC中文资料第6429页 > M58LW064A
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
M58LW064A | 64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories DESCRIPTION The M58LW064 is a non-volatile Flash memory that may be erased electrically at the block level and programmed in-system on a 16 Word or 8 Double-Word basis using a 2.7V to 3.6V supply for the circuit and a supply down to 1.8V for the Input and Output buffers. The M58LW064A is organise | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 |  |   |
64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories DESCRIPTION The M58LW064 is a non-volatile Flash memory that may be erased electrically at the block level and programmed in-system on a 16 Word or 8 Double-Word basis using a 2.7V to 3.6V supply for the circuit and a supply down to 1.8V for the Input and Output buffers. The M58LW064A is organise | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories DESCRIPTION The M58LW064 is a non-volatile Flash memory that may be erased electrically at the block level and programmed in-system on a 16 Word or 8 Double-Word basis using a 2.7V to 3.6V supply for the circuit and a supply down to 1.8V for the Input and Output buffers. The M58LW064A is organise | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories DESCRIPTION The M58LW064 is a non-volatile Flash memory that may be erased electrically at the block level and programmed in-system on a 16 Word or 8 Double-Word basis using a 2.7V to 3.6V supply for the circuit and a supply down to 1.8V for the Input and Output buffers. The M58LW064A is organise | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories DESCRIPTION The M58LW064 is a non-volatile Flash memory that may be erased electrically at the block level and programmed in-system on a 16 Word or 8 Double-Word basis using a 2.7V to 3.6V supply for the circuit and a supply down to 1.8V for the Input and Output buffers. The M58LW064A is organise | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories DESCRIPTION The M58LW064 is a non-volatile Flash memory that may be erased electrically at the block level and programmed in-system on a 16 Word or 8 Double-Word basis using a 2.7V to 3.6V supply for the circuit and a supply down to 1.8V for the Input and Output buffers. The M58LW064A is organise | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories DESCRIPTION The M58LW064 is a non-volatile Flash memory that may be erased electrically at the block level and programmed in-system on a 16 Word or 8 Double-Word basis using a 2.7V to 3.6V supply for the circuit and a supply down to 1.8V for the Input and Output buffers. The M58LW064A is organise | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories DESCRIPTION The M58LW064 is a non-volatile Flash memory that may be erased electrically at the block level and programmed in-system on a 16 Word or 8 Double-Word basis using a 2.7V to 3.6V supply for the circuit and a supply down to 1.8V for the Input and Output buffers. The M58LW064A is organise | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories DESCRIPTION The M58LW064 is a non-volatile Flash memory that may be erased electrically at the block level and programmed in-system on a 16 Word or 8 Double-Word basis using a 2.7V to 3.6V supply for the circuit and a supply down to 1.8V for the Input and Output buffers. The M58LW064A is organise | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories DESCRIPTION The M58LW064 is a non-volatile Flash memory that may be erased electrically at the block level and programmed in-system on a 16 Word or 8 Double-Word basis using a 2.7V to 3.6V supply for the circuit and a supply down to 1.8V for the Input and Output buffers. The M58LW064A is organise | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories DESCRIPTION The M58LW064 is a non-volatile Flash memory that may be erased electrically at the block level and programmed in-system on a 16 Word or 8 Double-Word basis using a 2.7V to 3.6V supply for the circuit and a supply down to 1.8V for the Input and Output buffers. The M58LW064A is organise | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories DESCRIPTION The M58LW064 is a non-volatile Flash memory that may be erased electrically at the block level and programmed in-system on a 16 Word or 8 Double-Word basis using a 2.7V to 3.6V supply for the circuit and a supply down to 1.8V for the Input and Output buffers. The M58LW064A is organise | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories DESCRIPTION The M58LW064 is a non-volatile Flash memory that may be erased electrically at the block level and programmed in-system on a 16 Word or 8 Double-Word basis using a 2.7V to 3.6V supply for the circuit and a supply down to 1.8V for the Input and Output buffers. The M58LW064A is organise | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories DESCRIPTION The M58LW064 is a non-volatile Flash memory that may be erased electrically at the block level and programmed in-system on a 16 Word or 8 Double-Word basis using a 2.7V to 3.6V supply for the circuit and a supply down to 1.8V for the Input and Output buffers. The M58LW064A is organise | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | |
M58LW064A产品属性
- 类型
描述
- 型号
M58LW064A
- 制造商
STMICROELECTRONICS
- 制造商全称
STMicroelectronics
- 功能描述
64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
AlphaIndustries |
23+ |
SOP |
12000 |
全新原装假一赔十 |
|||
ST |
2511 |
BGA |
16900 |
电子元器件采购降本 30%!盈慧通原厂直采,砍掉中间差价 |
|||
ST |
1926+ |
TSSOP |
6852 |
只做原装正品现货!或订货假一赔十! |
|||
ST |
23+ |
BGA |
6500 |
绝对全新原装!现货!特价!请放心订购! |
|||
STM |
23+ |
NA |
155 |
专做原装正品,假一罚百! |
|||
MIT |
24+ |
IGBT驱动 |
16800 |
绝对原装进口现货 假一赔十 价格优势! |
|||
ST |
2025+ |
TSOP56 |
3750 |
全新原厂原装产品、公司现货销售 |
|||
ST |
16+ |
BGA |
2500 |
进口原装现货/价格优势! |
|||
ST/意法 |
22+ |
BGA |
18000 |
只做全新原装,支持BOM配单,假一罚十 |
|||
SST |
25+ |
TSOP |
4500 |
全新原装、诚信经营、公司现货销售! |
M58LW064A芯片相关品牌
M58LW064A规格书下载地址
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DdatasheetPDF页码索引
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