型号 功能描述 生产厂家 企业 LOGO 操作
M58LW064A

64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories

DESCRIPTION The M58LW064 is a non-volatile Flash memory that may be erased electrically at the block level and programmed in-system on a 16 Word or 8 Double-Word basis using a 2.7V to 3.6V supply for the circuit and a supply down to 1.8V for the Input and Output buffers. The M58LW064A is organise

STMICROELECTRONICS

意法半导体

64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories

DESCRIPTION The M58LW064 is a non-volatile Flash memory that may be erased electrically at the block level and programmed in-system on a 16 Word or 8 Double-Word basis using a 2.7V to 3.6V supply for the circuit and a supply down to 1.8V for the Input and Output buffers. The M58LW064A is organise

STMICROELECTRONICS

意法半导体

64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories

DESCRIPTION The M58LW064 is a non-volatile Flash memory that may be erased electrically at the block level and programmed in-system on a 16 Word or 8 Double-Word basis using a 2.7V to 3.6V supply for the circuit and a supply down to 1.8V for the Input and Output buffers. The M58LW064A is organise

STMICROELECTRONICS

意法半导体

64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories

DESCRIPTION The M58LW064 is a non-volatile Flash memory that may be erased electrically at the block level and programmed in-system on a 16 Word or 8 Double-Word basis using a 2.7V to 3.6V supply for the circuit and a supply down to 1.8V for the Input and Output buffers. The M58LW064A is organise

STMICROELECTRONICS

意法半导体

64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories

DESCRIPTION The M58LW064 is a non-volatile Flash memory that may be erased electrically at the block level and programmed in-system on a 16 Word or 8 Double-Word basis using a 2.7V to 3.6V supply for the circuit and a supply down to 1.8V for the Input and Output buffers. The M58LW064A is organise

STMICROELECTRONICS

意法半导体

64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories

DESCRIPTION The M58LW064 is a non-volatile Flash memory that may be erased electrically at the block level and programmed in-system on a 16 Word or 8 Double-Word basis using a 2.7V to 3.6V supply for the circuit and a supply down to 1.8V for the Input and Output buffers. The M58LW064A is organise

STMICROELECTRONICS

意法半导体

64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories

DESCRIPTION The M58LW064 is a non-volatile Flash memory that may be erased electrically at the block level and programmed in-system on a 16 Word or 8 Double-Word basis using a 2.7V to 3.6V supply for the circuit and a supply down to 1.8V for the Input and Output buffers. The M58LW064A is organise

STMICROELECTRONICS

意法半导体

64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories

DESCRIPTION The M58LW064 is a non-volatile Flash memory that may be erased electrically at the block level and programmed in-system on a 16 Word or 8 Double-Word basis using a 2.7V to 3.6V supply for the circuit and a supply down to 1.8V for the Input and Output buffers. The M58LW064A is organise

STMICROELECTRONICS

意法半导体

64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories

DESCRIPTION The M58LW064 is a non-volatile Flash memory that may be erased electrically at the block level and programmed in-system on a 16 Word or 8 Double-Word basis using a 2.7V to 3.6V supply for the circuit and a supply down to 1.8V for the Input and Output buffers. The M58LW064A is organise

STMICROELECTRONICS

意法半导体

64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories

DESCRIPTION The M58LW064 is a non-volatile Flash memory that may be erased electrically at the block level and programmed in-system on a 16 Word or 8 Double-Word basis using a 2.7V to 3.6V supply for the circuit and a supply down to 1.8V for the Input and Output buffers. The M58LW064A is organise

STMICROELECTRONICS

意法半导体

64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories

DESCRIPTION The M58LW064 is a non-volatile Flash memory that may be erased electrically at the block level and programmed in-system on a 16 Word or 8 Double-Word basis using a 2.7V to 3.6V supply for the circuit and a supply down to 1.8V for the Input and Output buffers. The M58LW064A is organise

STMICROELECTRONICS

意法半导体

64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories

DESCRIPTION The M58LW064 is a non-volatile Flash memory that may be erased electrically at the block level and programmed in-system on a 16 Word or 8 Double-Word basis using a 2.7V to 3.6V supply for the circuit and a supply down to 1.8V for the Input and Output buffers. The M58LW064A is organise

STMICROELECTRONICS

意法半导体

64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories

DESCRIPTION The M58LW064 is a non-volatile Flash memory that may be erased electrically at the block level and programmed in-system on a 16 Word or 8 Double-Word basis using a 2.7V to 3.6V supply for the circuit and a supply down to 1.8V for the Input and Output buffers. The M58LW064A is organise

STMICROELECTRONICS

意法半导体

64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories

DESCRIPTION The M58LW064 is a non-volatile Flash memory that may be erased electrically at the block level and programmed in-system on a 16 Word or 8 Double-Word basis using a 2.7V to 3.6V supply for the circuit and a supply down to 1.8V for the Input and Output buffers. The M58LW064A is organise

STMICROELECTRONICS

意法半导体

M58LW064A产品属性

  • 类型

    描述

  • 型号

    M58LW064A

  • 制造商

    STMICROELECTRONICS

  • 制造商全称

    STMicroelectronics

  • 功能描述

    64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories

更新时间:2026-1-1 22:50:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
AlphaIndustries
23+
SOP
12000
全新原装假一赔十
STM
23+
NA
155
专做原装正品,假一罚百!
SST
25+
TSOP
4500
全新原装、诚信经营、公司现货销售!
ST
23+
BGA
6500
绝对全新原装!现货!特价!请放心订购!
ST
25+
BGA
18000
原厂直接发货进口原装
SST
24+
TSOP
486
ST/意法
24+
BGA
9600
原装现货,优势供应,支持实单!
ST
16+
BGA
2500
进口原装现货/价格优势!
SMD
2447
SMD
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
STMicroelectronics
2004
BGA
743
原装现货海量库存欢迎咨询

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