位置：首页 > IC中文资料第11737页 > M58LW064BNH
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
M58LW064BNH | 64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories DESCRIPTION The M58LW064 is a non-volatile Flash memory that may be erased electrically at the block level and programmed in-system on a 16 Word or 8 Double-Word basis using a 2.7V to 3.6V supply for the circuit and a supply down to 1.8V for the Input and Output buffers. The M58LW064A is organise | STMICROELECTRONICS 意法半导体 |   | |
64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories DESCRIPTION The M58LW064 is a non-volatile Flash memory that may be erased electrically at the block level and programmed in-system on a 16 Word or 8 Double-Word basis using a 2.7V to 3.6V supply for the circuit and a supply down to 1.8V for the Input and Output buffers. The M58LW064A is organise | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories DESCRIPTION The M58LW064 is a non-volatile Flash memory that may be erased electrically at the block level and programmed in-system on a 16 Word or 8 Double-Word basis using a 2.7V to 3.6V supply for the circuit and a supply down to 1.8V for the Input and Output buffers. The M58LW064A is organise | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories DESCRIPTION The M58LW064 is a non-volatile Flash memory that may be erased electrically at the block level and programmed in-system on a 16 Word or 8 Double-Word basis using a 2.7V to 3.6V supply for the circuit and a supply down to 1.8V for the Input and Output buffers. The M58LW064A is organise | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories DESCRIPTION The M58LW064 is a non-volatile Flash memory that may be erased electrically at the block level and programmed in-system on a 16 Word or 8 Double-Word basis using a 2.7V to 3.6V supply for the circuit and a supply down to 1.8V for the Input and Output buffers. The M58LW064A is organise | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories DESCRIPTION The M58LW064 is a non-volatile Flash memory that may be erased electrically at the block level and programmed in-system on a 16 Word or 8 Double-Word basis using a 2.7V to 3.6V supply for the circuit and a supply down to 1.8V for the Input and Output buffers. The M58LW064A is organise | STMICROELECTRONICS 意法半导体 | |
M58LW064BNH产品属性
- 类型
描述
- 型号
M58LW064BNH
- 制造商
STMICROELECTRONICS
- 制造商全称
STMicroelectronics
- 功能描述
64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
MIT |
24+ |
IGBT驱动 |
16800 |
绝对原装进口现货 假一赔十 价格优势! |
|||
ST |
23+ |
BGA |
50000 |
全新原装正品现货,支持订货 |
|||
ST |
2511 |
原厂原封 |
16900 |
电子元器件采购降本 30%!盈慧通原厂直采,砍掉中间差价 |
|||
ST/意法 |
24+ |
BGA |
9600 |
原装现货,优势供应,支持实单! |
|||
STMicroelectronics |
2004 |
BGA |
743 |
原装现货海量库存欢迎咨询 |
|||
ST/意法 |
23+ |
BGA |
13000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
SMD |
2447 |
SMD |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
ST |
23+ |
BGA |
6500 |
绝对全新原装!现货!特价!请放心订购! |
|||
ST |
25+ |
BGA |
4500 |
全新原装、诚信经营、公司现货销售! |
|||
ST |
18+ |
BGA |
24720 |
全新原装现货,可出样品,可开增值税发票 |
M58LW064BNH规格书下载地址
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DdatasheetPDF页码索引
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