位置：首页 > IC中文资料第6415页 > M58LW064D
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
M58LW064D | 64 Mbit (8Mb x8, 4Mb x16, Uniform Block) 3V Supply Flash Memory SUMMARY DESCRIPTION The M58LW064D is a 64 Mbit (8Mb x 8 or 4Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7V to 3.6V) core supply. FEATURES SUMMARY ■ WIDE x8 or x16 DATA BUS for HIGH BANDWIDTH ■ SUPPLY VOL | STMICROELECTRONICS 意法半导体 |   | |
M58LW064D | 64 Mbit (8Mb x8, 4Mb x16, Uniform Block) 3V Supply Flash Memory 文件：783.43 Kbytes Page：50 Pages | STMICROELECTRONICS 意法半导体 | | |
M58LW064D | 64 Mbit (8Mb x8, 4Mb x16, Uniform Block) 3V Supply Flash Memory | STMICROELECTRONICS 意法半导体 | | |
64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories DESCRIPTION The M58LW064 is a non-volatile Flash memory that may be erased electrically at the block level and programmed in-system on a 16 Word or 8 Double-Word basis using a 2.7V to 3.6V supply for the circuit and a supply down to 1.8V for the Input and Output buffers. The M58LW064A is organise | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit (8Mb x8, 4Mb x16, Uniform Block) 3V Supply Flash Memory SUMMARY DESCRIPTION The M58LW064D is a 64 Mbit (8Mb x 8 or 4Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7V to 3.6V) core supply. FEATURES SUMMARY ■ WIDE x8 or x16 DATA BUS for HIGH BANDWIDTH ■ SUPPLY VOL | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit (8Mb x8, 4Mb x16, Uniform Block) 3V Supply Flash Memory SUMMARY DESCRIPTION The M58LW064D is a 64 Mbit (8Mb x 8 or 4Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7V to 3.6V) core supply. FEATURES SUMMARY ■ WIDE x8 or x16 DATA BUS for HIGH BANDWIDTH ■ SUPPLY VOL | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit (8Mb x8, 4Mb x16, Uniform Block) 3V Supply Flash Memory SUMMARY DESCRIPTION The M58LW064D is a 64 Mbit (8Mb x 8 or 4Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7V to 3.6V) core supply. FEATURES SUMMARY ■ WIDE x8 or x16 DATA BUS for HIGH BANDWIDTH ■ SUPPLY VOL | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit (8Mb x8, 4Mb x16, Uniform Block) 3V Supply Flash Memory SUMMARY DESCRIPTION The M58LW064D is a 64 Mbit (8Mb x 8 or 4Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7V to 3.6V) core supply. FEATURES SUMMARY ■ WIDE x8 or x16 DATA BUS for HIGH BANDWIDTH ■ SUPPLY VOL | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit (8Mb x8, 4Mb x16, Uniform Block) 3V Supply Flash Memory SUMMARY DESCRIPTION The M58LW064D is a 64 Mbit (8Mb x 8 or 4Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7V to 3.6V) core supply. FEATURES SUMMARY ■ WIDE x8 or x16 DATA BUS for HIGH BANDWIDTH ■ SUPPLY VOL | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit (8Mb x8, 4Mb x16, Uniform Block) 3V Supply Flash Memory 文件：783.43 Kbytes Page：50 Pages | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit (8Mb x8, 4Mb x16, Uniform Block) 3V Supply Flash Memory 文件：783.43 Kbytes Page：50 Pages | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit (8Mb x8, 4Mb x16, Uniform Block) 3V Supply Flash Memory 文件：783.43 Kbytes Page：50 Pages | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit (8Mb x8, 4Mb x16, Uniform Block) 3V Supply Flash Memory 文件：783.43 Kbytes Page：50 Pages | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit (8Mb x8, 4Mb x16, Uniform Block) 3V Supply Flash Memory 文件：783.43 Kbytes Page：50 Pages | STMICROELECTRONICS 意法半导体 | | ||
封装/外壳：56-TFSOP（0.724"，18.40mm 宽） 包装：管件 描述：IC FLASH 64MBIT PARALLEL 56TSOP 集成电路（IC） 存储器 | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit (8Mb x8, 4Mb x16, Uniform Block) 3V Supply Flash Memory 文件：783.43 Kbytes Page：50 Pages | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit (8Mb x8, 4Mb x16, Uniform Block) 3V Supply Flash Memory 文件：783.43 Kbytes Page：50 Pages | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit (8Mb x8, 4Mb x16, Uniform Block) 3V Supply Flash Memory 文件：783.43 Kbytes Page：50 Pages | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit (8Mb x8, 4Mb x16, Uniform Block) 3V Supply Flash Memory 文件：783.43 Kbytes Page：50 Pages | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit (8Mb x8, 4Mb x16, Uniform Block) 3V Supply Flash Memory 文件：783.43 Kbytes Page：50 Pages | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit (8Mb x8, 4Mb x16, Uniform Block) 3V Supply Flash Memory 文件：783.43 Kbytes Page：50 Pages | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit (8Mb x8, 4Mb x16, Uniform Block) 3V Supply Flash Memory 文件：783.43 Kbytes Page：50 Pages | STMICROELECTRONICS 意法半导体 | | ||
封装/外壳：64-TBGA 包装：管件 描述：IC FLASH 64MBIT PARALLEL 64TBGA 集成电路（IC） 存储器 | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit (8Mb x8, 4Mb x16, Uniform Block) 3V Supply Flash Memory 文件：783.43 Kbytes Page：50 Pages | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit (8Mb x8, 4Mb x16, Uniform Block) 3V Supply Flash Memory 文件：783.43 Kbytes Page：50 Pages | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit (8Mb x8, 4Mb x16, Uniform Block) 3V Supply Flash Memory 文件：783.43 Kbytes Page：50 Pages | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit (8Mb x8, 4Mb x16, Uniform Block) 3V Supply Flash Memory 文件：783.43 Kbytes Page：50 Pages | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories DESCRIPTION The M58LW064 is a non-volatile Flash memory that may be erased electrically at the block level and programmed in-system on a 16 Word or 8 Double-Word basis using a 2.7V to 3.6V supply for the circuit and a supply down to 1.8V for the Input and Output buffers. The M58LW064A is organise | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories DESCRIPTION The M58LW064 is a non-volatile Flash memory that may be erased electrically at the block level and programmed in-system on a 16 Word or 8 Double-Word basis using a 2.7V to 3.6V supply for the circuit and a supply down to 1.8V for the Input and Output buffers. The M58LW064A is organise | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories DESCRIPTION The M58LW064 is a non-volatile Flash memory that may be erased electrically at the block level and programmed in-system on a 16 Word or 8 Double-Word basis using a 2.7V to 3.6V supply for the circuit and a supply down to 1.8V for the Input and Output buffers. The M58LW064A is organise | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories DESCRIPTION The M58LW064 is a non-volatile Flash memory that may be erased electrically at the block level and programmed in-system on a 16 Word or 8 Double-Word basis using a 2.7V to 3.6V supply for the circuit and a supply down to 1.8V for the Input and Output buffers. The M58LW064A is organise | STMICROELECTRONICS 意法半导体 | |
M58LW064D产品属性
- 类型
描述
- 型号
M58LW064D
- 制造商
STMICROELECTRONICS
- 制造商全称
STMicroelectronics
- 功能描述
64 Mbit(8Mb x8, 4Mb x16, Uniform Block) 3V Supply Flash Memory
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST |
16+ |
BGA |
2500 |
进口原装现货/价格优势! |
|||
ST |
24+ |
BGA |
20000 |
全新原厂原装，进口正品现货，正规渠道可含税！！ |
|||
MITSUBIS |
NA |
5650 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
ST |
2511 |
BGA |
16900 |
电子元器件采购降本30%!原厂直采,砍掉中间差价 |
|||
2023+ |
5800 |
进口原装,现货热卖 |
|||||
ST |
22+ |
TSOP |
12245 |
现货,原厂原装假一罚十! |
|||
ST |
25+ |
BGA |
16900 |
原装，请咨询 |
|||
ST/意法 |
24+ |
TSSOP |
9600 |
原装现货,优势供应,支持实单! |
|||
ST/意法 |
2025+ |
TSOP |
5000 |
原装进口价格优 请找坤融电子! |
|||
ST |
2447 |
BGA |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
M58LW064D芯片相关品牌
M58LW064D规格书下载地址
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DdatasheetPDF页码索引
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