型号 功能描述 生产厂家 企业 LOGO 操作
M58LW064D

64 Mbit (8Mb x8, 4Mb x16, Uniform Block) 3V Supply Flash Memory

SUMMARY DESCRIPTION The M58LW064D is a 64 Mbit (8Mb x 8 or 4Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7V to 3.6V) core supply. FEATURES SUMMARY ■ WIDE x8 or x16 DATA BUS for HIGH BANDWIDTH ■ SUPPLY VOL

STMICROELECTRONICS

意法半导体

M58LW064D

64 Mbit (8Mb x8, 4Mb x16, Uniform Block) 3V Supply Flash Memory

文件:783.43 Kbytes Page:50 Pages

STMICROELECTRONICS

意法半导体

M58LW064D

64 Mbit (8Mb x8, 4Mb x16, Uniform Block) 3V Supply Flash Memory

STMICROELECTRONICS

意法半导体

64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories

DESCRIPTION The M58LW064 is a non-volatile Flash memory that may be erased electrically at the block level and programmed in-system on a 16 Word or 8 Double-Word basis using a 2.7V to 3.6V supply for the circuit and a supply down to 1.8V for the Input and Output buffers. The M58LW064A is organise

STMICROELECTRONICS

意法半导体

64 Mbit (8Mb x8, 4Mb x16, Uniform Block) 3V Supply Flash Memory

SUMMARY DESCRIPTION The M58LW064D is a 64 Mbit (8Mb x 8 or 4Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7V to 3.6V) core supply. FEATURES SUMMARY ■ WIDE x8 or x16 DATA BUS for HIGH BANDWIDTH ■ SUPPLY VOL

STMICROELECTRONICS

意法半导体

64 Mbit (8Mb x8, 4Mb x16, Uniform Block) 3V Supply Flash Memory

SUMMARY DESCRIPTION The M58LW064D is a 64 Mbit (8Mb x 8 or 4Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7V to 3.6V) core supply. FEATURES SUMMARY ■ WIDE x8 or x16 DATA BUS for HIGH BANDWIDTH ■ SUPPLY VOL

STMICROELECTRONICS

意法半导体

64 Mbit (8Mb x8, 4Mb x16, Uniform Block) 3V Supply Flash Memory

SUMMARY DESCRIPTION The M58LW064D is a 64 Mbit (8Mb x 8 or 4Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7V to 3.6V) core supply. FEATURES SUMMARY ■ WIDE x8 or x16 DATA BUS for HIGH BANDWIDTH ■ SUPPLY VOL

STMICROELECTRONICS

意法半导体

64 Mbit (8Mb x8, 4Mb x16, Uniform Block) 3V Supply Flash Memory

SUMMARY DESCRIPTION The M58LW064D is a 64 Mbit (8Mb x 8 or 4Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7V to 3.6V) core supply. FEATURES SUMMARY ■ WIDE x8 or x16 DATA BUS for HIGH BANDWIDTH ■ SUPPLY VOL

STMICROELECTRONICS

意法半导体

64 Mbit (8Mb x8, 4Mb x16, Uniform Block) 3V Supply Flash Memory

SUMMARY DESCRIPTION The M58LW064D is a 64 Mbit (8Mb x 8 or 4Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7V to 3.6V) core supply. FEATURES SUMMARY ■ WIDE x8 or x16 DATA BUS for HIGH BANDWIDTH ■ SUPPLY VOL

STMICROELECTRONICS

意法半导体

64 Mbit (8Mb x8, 4Mb x16, Uniform Block) 3V Supply Flash Memory

文件:783.43 Kbytes Page:50 Pages

STMICROELECTRONICS

意法半导体

64 Mbit (8Mb x8, 4Mb x16, Uniform Block) 3V Supply Flash Memory

文件:783.43 Kbytes Page:50 Pages

STMICROELECTRONICS

意法半导体

64 Mbit (8Mb x8, 4Mb x16, Uniform Block) 3V Supply Flash Memory

文件:783.43 Kbytes Page:50 Pages

STMICROELECTRONICS

意法半导体

64 Mbit (8Mb x8, 4Mb x16, Uniform Block) 3V Supply Flash Memory

文件:783.43 Kbytes Page:50 Pages

STMICROELECTRONICS

意法半导体

64 Mbit (8Mb x8, 4Mb x16, Uniform Block) 3V Supply Flash Memory

文件:783.43 Kbytes Page:50 Pages

STMICROELECTRONICS

意法半导体

封装/外壳:56-TFSOP(0.724",18.40mm 宽) 包装:管件 描述:IC FLASH 64MBIT PARALLEL 56TSOP 集成电路(IC) 存储器

STMICROELECTRONICS

意法半导体

64 Mbit (8Mb x8, 4Mb x16, Uniform Block) 3V Supply Flash Memory

文件:783.43 Kbytes Page:50 Pages

STMICROELECTRONICS

意法半导体

64 Mbit (8Mb x8, 4Mb x16, Uniform Block) 3V Supply Flash Memory

文件:783.43 Kbytes Page:50 Pages

STMICROELECTRONICS

意法半导体

64 Mbit (8Mb x8, 4Mb x16, Uniform Block) 3V Supply Flash Memory

文件:783.43 Kbytes Page:50 Pages

STMICROELECTRONICS

意法半导体

64 Mbit (8Mb x8, 4Mb x16, Uniform Block) 3V Supply Flash Memory

文件:783.43 Kbytes Page:50 Pages

STMICROELECTRONICS

意法半导体

64 Mbit (8Mb x8, 4Mb x16, Uniform Block) 3V Supply Flash Memory

文件:783.43 Kbytes Page:50 Pages

STMICROELECTRONICS

意法半导体

64 Mbit (8Mb x8, 4Mb x16, Uniform Block) 3V Supply Flash Memory

文件:783.43 Kbytes Page:50 Pages

STMICROELECTRONICS

意法半导体

64 Mbit (8Mb x8, 4Mb x16, Uniform Block) 3V Supply Flash Memory

文件:783.43 Kbytes Page:50 Pages

STMICROELECTRONICS

意法半导体

封装/外壳:64-TBGA 包装:管件 描述:IC FLASH 64MBIT PARALLEL 64TBGA 集成电路(IC) 存储器

STMICROELECTRONICS

意法半导体

64 Mbit (8Mb x8, 4Mb x16, Uniform Block) 3V Supply Flash Memory

文件:783.43 Kbytes Page:50 Pages

STMICROELECTRONICS

意法半导体

64 Mbit (8Mb x8, 4Mb x16, Uniform Block) 3V Supply Flash Memory

文件:783.43 Kbytes Page:50 Pages

STMICROELECTRONICS

意法半导体

64 Mbit (8Mb x8, 4Mb x16, Uniform Block) 3V Supply Flash Memory

文件:783.43 Kbytes Page:50 Pages

STMICROELECTRONICS

意法半导体

64 Mbit (8Mb x8, 4Mb x16, Uniform Block) 3V Supply Flash Memory

文件:783.43 Kbytes Page:50 Pages

STMICROELECTRONICS

意法半导体

64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories

DESCRIPTION The M58LW064 is a non-volatile Flash memory that may be erased electrically at the block level and programmed in-system on a 16 Word or 8 Double-Word basis using a 2.7V to 3.6V supply for the circuit and a supply down to 1.8V for the Input and Output buffers. The M58LW064A is organise

STMICROELECTRONICS

意法半导体

64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories

DESCRIPTION The M58LW064 is a non-volatile Flash memory that may be erased electrically at the block level and programmed in-system on a 16 Word or 8 Double-Word basis using a 2.7V to 3.6V supply for the circuit and a supply down to 1.8V for the Input and Output buffers. The M58LW064A is organise

STMICROELECTRONICS

意法半导体

64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories

DESCRIPTION The M58LW064 is a non-volatile Flash memory that may be erased electrically at the block level and programmed in-system on a 16 Word or 8 Double-Word basis using a 2.7V to 3.6V supply for the circuit and a supply down to 1.8V for the Input and Output buffers. The M58LW064A is organise

STMICROELECTRONICS

意法半导体

64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories

DESCRIPTION The M58LW064 is a non-volatile Flash memory that may be erased electrically at the block level and programmed in-system on a 16 Word or 8 Double-Word basis using a 2.7V to 3.6V supply for the circuit and a supply down to 1.8V for the Input and Output buffers. The M58LW064A is organise

STMICROELECTRONICS

意法半导体

M58LW064D产品属性

  • 类型

    描述

  • 型号

    M58LW064D

  • 制造商

    STMICROELECTRONICS

  • 制造商全称

    STMicroelectronics

  • 功能描述

    64 Mbit(8Mb x8, 4Mb x16, Uniform Block) 3V Supply Flash Memory

更新时间:2026-1-27 20:38:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ST
TSOP56
91
全新原装进口自己库存优势
ST
BGA
68500
一级代理 原装正品假一罚十价格优势长期供货
ST
23+
TSOP-56
65480
STMICROELECT
05+
原厂原装
4226
只做全新原装真实现货供应
STM
25+
798
全新原装!优势库存热卖中!
ST
25+
标准封装
18000
原厂直接发货进口原装
ST
25+
TSOP56
3000
全新原装、诚信经营、公司现货销售!
ST
2138+
BGA
8960
专营BGA,QFP原装现货,假一赔十
ST
25+
BGA
16900
原装,请咨询
ST
2025+
TSOP
3505
全新原厂原装产品、公司现货销售

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