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M45PE10价格
参考价格：￥2.6005
型号：M45PE10-VMN6TP 品牌：Micron 备注：这里有M45PE10多少钱，2025年最近7天走势，今日出价，今日竞价，M45PE10批发/采购报价，M45PE10行情走势销售排行榜，M45PE10报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
M45PE10 | 1 Mbit, Low Voltage, Page-Erasable Serial Flash Memory With Byte-Alterability and a 25 MHz SPI Bus Interface Description The M45PE10 is a 1 Mbit (128 Kb x 8 bit) Serial Paged Flash Memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated | STMICROELECTRONICS 意法半导体 |   | |
M45PE10 | 1 Mbit, low voltage, Page-Erasable Serial Flash memory with byte-alterability and a 50 MHz SPI bus interface Description The M45PE10 is a 1 Mbit (128 Kb x 8 bit) Serial Paged Flash Memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated | STMICROELECTRONICS 意法半导体 | | |
M45PE10 | 1-Mbit, page-erasable serial flash memory with byte-alterability and 75 MHz SPI bus interface Description The M45PE10 is a 1 Mbit (128 Kb x 8 bit) Serial Paged Flash Memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated | NUMONYX numonyx | | |
1 Mbit, low voltage, Page-Erasable Serial Flash memory with byte-alterability and a 50 MHz SPI bus interface Description The M45PE10 is a 1 Mbit (128 Kb x 8 bit) Serial Paged Flash Memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated | STMICROELECTRONICS 意法半导体 | | ||
1 Mbit, Low Voltage, Page-Erasable Serial Flash Memory With Byte-Alterability and a 25 MHz SPI Bus Interface Description The M45PE10 is a 1 Mbit (128 Kb x 8 bit) Serial Paged Flash Memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated | STMICROELECTRONICS 意法半导体 | | ||
1 Mbit, low voltage, Page-Erasable Serial Flash memory with byte-alterability and a 50 MHz SPI bus interface Description The M45PE10 is a 1 Mbit (128 Kb x 8 bit) Serial Paged Flash Memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated | STMICROELECTRONICS 意法半导体 | | ||
1-Mbit, page-erasable serial flash memory with byte-alterability and 75 MHz SPI bus interface Description The M45PE10 is a 1 Mbit (128 Kb x 8 bit) Serial Paged Flash Memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated | NUMONYX numonyx | | ||
1 Mbit, Low Voltage, Page-Erasable Serial Flash Memory With Byte-Alterability and a 25 MHz SPI Bus Interface Description The M45PE10 is a 1 Mbit (128 Kb x 8 bit) Serial Paged Flash Memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated | STMICROELECTRONICS 意法半导体 | | ||
1-Mbit, page-erasable serial flash memory with byte-alterability and 75 MHz SPI bus interface Description The M45PE10 is a 1 Mbit (128 Kb x 8 bit) Serial Paged Flash Memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated | NUMONYX numonyx | | ||
1 Mbit, low voltage, Page-Erasable Serial Flash memory with byte-alterability and a 50 MHz SPI bus interface Description The M45PE10 is a 1 Mbit (128 Kb x 8 bit) Serial Paged Flash Memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated | STMICROELECTRONICS 意法半导体 | | ||
1 Mbit, Low Voltage, Page-Erasable Serial Flash Memory With Byte-Alterability and a 25 MHz SPI Bus Interface Description The M45PE10 is a 1 Mbit (128 Kb x 8 bit) Serial Paged Flash Memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated | STMICROELECTRONICS 意法半导体 | | ||
1 Mbit, Low Voltage, Page-Erasable Serial Flash Memory With Byte-Alterability and a 25 MHz SPI Bus Interface Description The M45PE10 is a 1 Mbit (128 Kb x 8 bit) Serial Paged Flash Memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated | STMICROELECTRONICS 意法半导体 | | ||
1 Mbit, Low Voltage, Page-Erasable Serial Flash Memory With Byte-Alterability and a 25 MHz SPI Bus Interface Description The M45PE10 is a 1 Mbit (128 Kb x 8 bit) Serial Paged Flash Memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated | STMICROELECTRONICS 意法半导体 | | ||
1 Mbit, low voltage, Page-Erasable Serial Flash memory with byte-alterability and a 50 MHz SPI bus interface Description The M45PE10 is a 1 Mbit (128 Kb x 8 bit) Serial Paged Flash Memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated | STMICROELECTRONICS 意法半导体 | | ||
1-Mbit, page-erasable serial flash memory with byte-alterability and 75 MHz SPI bus interface Description The M45PE10 is a 1 Mbit (128 Kb x 8 bit) Serial Paged Flash Memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated | NUMONYX numonyx | | ||
1-Mbit, page-erasable serial flash memory with byte-alterability and 75 MHz SPI bus interface Description The M45PE10 is a 1 Mbit (128 Kb x 8 bit) Serial Paged Flash Memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated | NUMONYX numonyx | | ||
1 Mbit, low voltage, Page-Erasable Serial Flash memory with byte-alterability and a 50 MHz SPI bus interface Description The M45PE10 is a 1 Mbit (128 Kb x 8 bit) Serial Paged Flash Memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated | STMICROELECTRONICS 意法半导体 | | ||
1 Mbit, Low Voltage, Page-Erasable Serial Flash Memory With Byte-Alterability and a 25 MHz SPI Bus Interface Description The M45PE10 is a 1 Mbit (128 Kb x 8 bit) Serial Paged Flash Memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated | STMICROELECTRONICS 意法半导体 | | ||
1 Mbit, Low Voltage, Page-Erasable Serial Flash Memory With Byte-Alterability and a 25 MHz SPI Bus Interface Description The M45PE10 is a 1 Mbit (128 Kb x 8 bit) Serial Paged Flash Memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated | STMICROELECTRONICS 意法半导体 | | ||
1 Mbit, low voltage, Page-Erasable Serial Flash memory with byte-alterability and a 50 MHz SPI bus interface Description The M45PE10 is a 1 Mbit (128 Kb x 8 bit) Serial Paged Flash Memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated | STMICROELECTRONICS 意法半导体 | | ||
1-Mbit, page-erasable serial flash memory with byte-alterability and 75 MHz SPI bus interface Description The M45PE10 is a 1 Mbit (128 Kb x 8 bit) Serial Paged Flash Memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated | NUMONYX numonyx | | ||
1 Mbit, Low Voltage, Page-Erasable Serial Flash Memory With Byte-Alterability and a 25 MHz SPI Bus Interface Description The M45PE10 is a 1 Mbit (128 Kb x 8 bit) Serial Paged Flash Memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated | STMICROELECTRONICS 意法半导体 | | ||
1 Mbit, Low Voltage, Page-Erasable Serial Flash Memory With Byte-Alterability and a 25 MHz SPI Bus Interface Description The M45PE10 is a 1 Mbit (128 Kb x 8 bit) Serial Paged Flash Memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated | STMICROELECTRONICS 意法半导体 | | ||
1-Mbit, page-erasable serial flash memory with byte-alterability and 75 MHz SPI bus interface Description The M45PE10 is a 1 Mbit (128 Kb x 8 bit) Serial Paged Flash Memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated | NUMONYX numonyx | | ||
1 Mbit, low voltage, Page-Erasable Serial Flash memory with byte-alterability and a 50 MHz SPI bus interface Description The M45PE10 is a 1 Mbit (128 Kb x 8 bit) Serial Paged Flash Memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated | STMICROELECTRONICS 意法半导体 | | ||
1 Mbit, Low Voltage, Page-Erasable Serial Flash Memory With Byte-Alterability and a 25 MHz SPI Bus Interface Description The M45PE10 is a 1 Mbit (128 Kb x 8 bit) Serial Paged Flash Memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated | STMICROELECTRONICS 意法半导体 | | ||
1 Mbit, Low Voltage, Page-Erasable Serial Flash Memory With Byte-Alterability and a 25 MHz SPI Bus Interface Description The M45PE10 is a 1 Mbit (128 Kb x 8 bit) Serial Paged Flash Memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated | STMICROELECTRONICS 意法半导体 | | ||
1 Mbit, low voltage, Page-Erasable Serial Flash memory with byte-alterability and a 50 MHz SPI bus interface Description The M45PE10 is a 1 Mbit (128 Kb x 8 bit) Serial Paged Flash Memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated | STMICROELECTRONICS 意法半导体 | | ||
1-Mbit, page-erasable serial flash memory with byte-alterability and 75 MHz SPI bus interface Description The M45PE10 is a 1 Mbit (128 Kb x 8 bit) Serial Paged Flash Memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated | NUMONYX numonyx | | ||
1-Mbit, page-erasable serial flash memory with byte-alterability and 75 MHz SPI bus interface Description The M45PE10 is a 1 Mbit (128 Kb x 8 bit) Serial Paged Flash Memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated | NUMONYX numonyx | | ||
1 Mbit, low voltage, Page-Erasable Serial Flash memory with byte-alterability and a 50 MHz SPI bus interface Description The M45PE10 is a 1 Mbit (128 Kb x 8 bit) Serial Paged Flash Memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated | STMICROELECTRONICS 意法半导体 | | ||
1 Mbit, Low Voltage, Page-Erasable Serial Flash Memory With Byte-Alterability and a 25 MHz SPI Bus Interface Description The M45PE10 is a 1 Mbit (128 Kb x 8 bit) Serial Paged Flash Memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated | STMICROELECTRONICS 意法半导体 | | ||
封装/外壳：8-SOIC（0.154"，3.90mm 宽） 包装：卷带（TR） 描述：IC FLASH 1MBIT SPI 75MHZ 8SO 集成电路（IC） 存储器 | ELPIDA 美光科技 | | ||
封装/外壳：8-VDFN 裸露焊盘 包装：托盘 描述：IC FLASH 1MBIT SPI 75MHZ 8VFQFPN 集成电路（IC） 存储器 | ELPIDA 美光科技 | |
M45PE10产品属性
- 类型
描述
- 型号
M45PE10
- 制造商
NUMONYX
- 制造商全称
Numonyx B.V
- 功能描述
1-Mbit, page-erasable serial flash memory with byte-alterability and 75 MHz SPI bus interface
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
MICRON |
24+ |
SOP8 |
9548 |
原厂可订货,技术支持,直接渠道。可签保供合同 |
|||
ST/意法 |
24+ |
NA/ |
2032 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
STM |
2016+ |
SON8 |
3500 |
本公司只做原装,假一罚十,可开17%增值税发票! |
|||
ST? |
23+ |
SO8N/MLP8? |
20000 |
全新原装假一赔十 |
|||
MICRON/美光 |
22+ |
NA |
3000 |
支持任何机构检测 只做原装正品 |
|||
MICRON/美光 |
2018+ |
SO8N |
880000 |
明嘉莱只做原装正品现货 |
|||
ST/意法 |
25+ |
SOP8 |
54648 |
百分百原装现货 实单必成 欢迎询价 |
|||
ST/意法 |
22+ |
SOP-8 |
100000 |
代理渠道/只做原装/可含税 |
|||
MICRON/美光 |
25+ |
SOP8 |
32360 |
MICRON/美光全新特价M45PE10-VMN6TP即刻询购立享优惠#长期有货 |
|||
Micron |
24+ |
SO8N |
20000 |
全新原厂原装，进口正品现货，正规渠道可含税！！ |
M45PE10规格书下载地址
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