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M45PE10价格
参考价格：￥2.6005
型号：M45PE10-VMN6TP 品牌：Micron 备注：这里有M45PE10多少钱，2026年最近7天走势，今日出价，今日竞价，M45PE10批发/采购报价，M45PE10行情走势销售排行榜，M45PE10报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
M45PE10 | 1 Mbit, Low Voltage, Page-Erasable Serial Flash Memory With Byte-Alterability and a 25 MHz SPI Bus Interface Description The M45PE10 is a 1 Mbit (128 Kb x 8 bit) Serial Paged Flash Memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated | STMICROELECTRONICS 意法半导体 |   | |
M45PE10 | 1 Mbit, low voltage, Page-Erasable Serial Flash memory with byte-alterability and a 50 MHz SPI bus interface Description The M45PE10 is a 1 Mbit (128 Kb x 8 bit) Serial Paged Flash Memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated | STMICROELECTRONICS 意法半导体 | | |
M45PE10 | 1-Mbit, page-erasable serial flash memory with byte-alterability and 75 MHz SPI bus interface Description The M45PE10 is a 1 Mbit (128 Kb x 8 bit) Serial Paged Flash Memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated | NUMONYX | | |
M45PE10 | 1-Mbit, page-erasable serial flash memory with byte-alterability and 75 MHz SPI bus interface | MICRON 美光 | | |
1 Mbit, low voltage, Page-Erasable Serial Flash memory with byte-alterability and a 50 MHz SPI bus interface Description The M45PE10 is a 1 Mbit (128 Kb x 8 bit) Serial Paged Flash Memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated | STMICROELECTRONICS 意法半导体 | | ||
1 Mbit, Low Voltage, Page-Erasable Serial Flash Memory With Byte-Alterability and a 25 MHz SPI Bus Interface Description The M45PE10 is a 1 Mbit (128 Kb x 8 bit) Serial Paged Flash Memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated | STMICROELECTRONICS 意法半导体 | | ||
1 Mbit, low voltage, Page-Erasable Serial Flash memory with byte-alterability and a 50 MHz SPI bus interface Description The M45PE10 is a 1 Mbit (128 Kb x 8 bit) Serial Paged Flash Memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated | STMICROELECTRONICS 意法半导体 | | ||
1-Mbit, page-erasable serial flash memory with byte-alterability and 75 MHz SPI bus interface Description The M45PE10 is a 1 Mbit (128 Kb x 8 bit) Serial Paged Flash Memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated | NUMONYX | | ||
1 Mbit, Low Voltage, Page-Erasable Serial Flash Memory With Byte-Alterability and a 25 MHz SPI Bus Interface Description The M45PE10 is a 1 Mbit (128 Kb x 8 bit) Serial Paged Flash Memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated | STMICROELECTRONICS 意法半导体 | | ||
1-Mbit, page-erasable serial flash memory with byte-alterability and 75 MHz SPI bus interface Description The M45PE10 is a 1 Mbit (128 Kb x 8 bit) Serial Paged Flash Memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated | NUMONYX | | ||
1 Mbit, low voltage, Page-Erasable Serial Flash memory with byte-alterability and a 50 MHz SPI bus interface Description The M45PE10 is a 1 Mbit (128 Kb x 8 bit) Serial Paged Flash Memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated | STMICROELECTRONICS 意法半导体 | | ||
1 Mbit, Low Voltage, Page-Erasable Serial Flash Memory With Byte-Alterability and a 25 MHz SPI Bus Interface Description The M45PE10 is a 1 Mbit (128 Kb x 8 bit) Serial Paged Flash Memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated | STMICROELECTRONICS 意法半导体 | | ||
1 Mbit, Low Voltage, Page-Erasable Serial Flash Memory With Byte-Alterability and a 25 MHz SPI Bus Interface Description The M45PE10 is a 1 Mbit (128 Kb x 8 bit) Serial Paged Flash Memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated | STMICROELECTRONICS 意法半导体 | | ||
1 Mbit, Low Voltage, Page-Erasable Serial Flash Memory With Byte-Alterability and a 25 MHz SPI Bus Interface Description The M45PE10 is a 1 Mbit (128 Kb x 8 bit) Serial Paged Flash Memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated | STMICROELECTRONICS 意法半导体 | | ||
1 Mbit, low voltage, Page-Erasable Serial Flash memory with byte-alterability and a 50 MHz SPI bus interface Description The M45PE10 is a 1 Mbit (128 Kb x 8 bit) Serial Paged Flash Memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated | STMICROELECTRONICS 意法半导体 | | ||
1-Mbit, page-erasable serial flash memory with byte-alterability and 75 MHz SPI bus interface Description The M45PE10 is a 1 Mbit (128 Kb x 8 bit) Serial Paged Flash Memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated | NUMONYX | | ||
1-Mbit, page-erasable serial flash memory with byte-alterability and 75 MHz SPI bus interface Description The M45PE10 is a 1 Mbit (128 Kb x 8 bit) Serial Paged Flash Memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated | NUMONYX | | ||
1 Mbit, low voltage, Page-Erasable Serial Flash memory with byte-alterability and a 50 MHz SPI bus interface Description The M45PE10 is a 1 Mbit (128 Kb x 8 bit) Serial Paged Flash Memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated | STMICROELECTRONICS 意法半导体 | | ||
1 Mbit, Low Voltage, Page-Erasable Serial Flash Memory With Byte-Alterability and a 25 MHz SPI Bus Interface Description The M45PE10 is a 1 Mbit (128 Kb x 8 bit) Serial Paged Flash Memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated | STMICROELECTRONICS 意法半导体 | | ||
1 Mbit, Low Voltage, Page-Erasable Serial Flash Memory With Byte-Alterability and a 25 MHz SPI Bus Interface Description The M45PE10 is a 1 Mbit (128 Kb x 8 bit) Serial Paged Flash Memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated | STMICROELECTRONICS 意法半导体 | | ||
1 Mbit, low voltage, Page-Erasable Serial Flash memory with byte-alterability and a 50 MHz SPI bus interface Description The M45PE10 is a 1 Mbit (128 Kb x 8 bit) Serial Paged Flash Memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated | STMICROELECTRONICS 意法半导体 | | ||
1-Mbit, page-erasable serial flash memory with byte-alterability and 75 MHz SPI bus interface Description The M45PE10 is a 1 Mbit (128 Kb x 8 bit) Serial Paged Flash Memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated | NUMONYX | | ||
1 Mbit, Low Voltage, Page-Erasable Serial Flash Memory With Byte-Alterability and a 25 MHz SPI Bus Interface Description The M45PE10 is a 1 Mbit (128 Kb x 8 bit) Serial Paged Flash Memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated | STMICROELECTRONICS 意法半导体 | | ||
1 Mbit, Low Voltage, Page-Erasable Serial Flash Memory With Byte-Alterability and a 25 MHz SPI Bus Interface Description The M45PE10 is a 1 Mbit (128 Kb x 8 bit) Serial Paged Flash Memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated | STMICROELECTRONICS 意法半导体 | | ||
1-Mbit, page-erasable serial flash memory with byte-alterability and 75 MHz SPI bus interface Description The M45PE10 is a 1 Mbit (128 Kb x 8 bit) Serial Paged Flash Memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated | NUMONYX | | ||
1 Mbit, low voltage, Page-Erasable Serial Flash memory with byte-alterability and a 50 MHz SPI bus interface Description The M45PE10 is a 1 Mbit (128 Kb x 8 bit) Serial Paged Flash Memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated | STMICROELECTRONICS 意法半导体 | | ||
1 Mbit, Low Voltage, Page-Erasable Serial Flash Memory With Byte-Alterability and a 25 MHz SPI Bus Interface Description The M45PE10 is a 1 Mbit (128 Kb x 8 bit) Serial Paged Flash Memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated | STMICROELECTRONICS 意法半导体 | | ||
1 Mbit, Low Voltage, Page-Erasable Serial Flash Memory With Byte-Alterability and a 25 MHz SPI Bus Interface Description The M45PE10 is a 1 Mbit (128 Kb x 8 bit) Serial Paged Flash Memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated | STMICROELECTRONICS 意法半导体 | | ||
1 Mbit, low voltage, Page-Erasable Serial Flash memory with byte-alterability and a 50 MHz SPI bus interface Description The M45PE10 is a 1 Mbit (128 Kb x 8 bit) Serial Paged Flash Memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated | STMICROELECTRONICS 意法半导体 | | ||
1-Mbit, page-erasable serial flash memory with byte-alterability and 75 MHz SPI bus interface Description The M45PE10 is a 1 Mbit (128 Kb x 8 bit) Serial Paged Flash Memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated | NUMONYX | | ||
1-Mbit, page-erasable serial flash memory with byte-alterability and 75 MHz SPI bus interface Description The M45PE10 is a 1 Mbit (128 Kb x 8 bit) Serial Paged Flash Memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated | NUMONYX | | ||
1 Mbit, low voltage, Page-Erasable Serial Flash memory with byte-alterability and a 50 MHz SPI bus interface Description The M45PE10 is a 1 Mbit (128 Kb x 8 bit) Serial Paged Flash Memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated | STMICROELECTRONICS 意法半导体 | | ||
1 Mbit, Low Voltage, Page-Erasable Serial Flash Memory With Byte-Alterability and a 25 MHz SPI Bus Interface Description The M45PE10 is a 1 Mbit (128 Kb x 8 bit) Serial Paged Flash Memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated | STMICROELECTRONICS 意法半导体 | | ||
封装/外壳：8-SOIC（0.154"，3.90mm 宽） 包装：卷带（TR） 描述：IC FLASH 1MBIT SPI 75MHZ 8SO 集成电路（IC） 存储器 | ETC 知名厂家 | ETC | | |
封装/外壳：8-VDFN 裸露焊盘 包装：托盘 描述：IC FLASH 1MBIT SPI 75MHZ 8VFQFPN 集成电路（IC） 存储器 | ETC 知名厂家 | ETC | | |
Serial NOR Flash | MICRON 美光 | | ||
Serial NOR Flash | MICRON 美光 | |
M45PE10产品属性
- 类型
描述
- 型号
M45PE10
- 制造商
NUMONYX
- 制造商全称
Numonyx B.V
- 功能描述
1-Mbit, page-erasable serial flash memory with byte-alterability and 75 MHz SPI bus interface
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Micron |
24+ |
SOP-8 |
9805 |
一级代理/全新现货/长期供应! |
|||
MICRON |
25+ |
SOP8 |
2265 |
原装现货 |
|||
ST(意法半导体) |
25+ |
N/A |
7786 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
|||
Micron(镁光) |
25+ |
SOIC-8 |
21000 |
原装正品现货,原厂订货,可支持含税原型号开票。 |
|||
Micron |
2450+ |
SO8N |
6541 |
只做原装正品假一赔十为客户做到零风险!! |
|||
ST/意法半导体 |
25+ |
SOP-8 |
990 |
全新原装正品支持含税 |
|||
Micron |
最新 |
SO8N |
6800 |
全新原装公司现货低价 |
|||
MICRON |
24+ |
SOP-8 |
5600 |
MICRON专营原装进口现货 |
|||
MICRON/美光 |
18+ |
SOP8 |
13901 |
原装现货 价格优势 |
|||
MICRON/美光 |
25+ |
SOP8 |
32360 |
MICRON/美光全新特价M45PE10-VMN6TP即刻询购立享优惠#长期有货 |
M45PE10规格书下载地址
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