型号 功能描述 生产厂家&企业 LOGO 操作
M45PE10-VMN6P

1 Mbit, Low Voltage, Page-Erasable Serial Flash Memory With Byte-Alterability and a 25 MHz SPI Bus Interface

Description The M45PE10 is a 1 Mbit (128 Kb x 8 bit) Serial Paged Flash Memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated

STMICROELECTRONICS

意法半导体

M45PE10-VMN6P

1 Mbit, low voltage, Page-Erasable Serial Flash memory with byte-alterability and a 50 MHz SPI bus interface

Description The M45PE10 is a 1 Mbit (128 Kb x 8 bit) Serial Paged Flash Memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated

STMICROELECTRONICS

意法半导体

M45PE10-VMN6P

1-Mbit, page-erasable serial flash memory with byte-alterability and 75 MHz SPI bus interface

Description The M45PE10 is a 1 Mbit (128 Kb x 8 bit) Serial Paged Flash Memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated

NUMONYX

numonyx

M45PE10-VMN6P

封装/外壳:8-SOIC(0.154",3.90mm 宽) 包装:托盘 描述:IC FLASH 1MBIT SPI 75MHZ 8SO 集成电路(IC) 存储器

ELPIDA

美光科技

1 Mbit, Low Voltage, Page-Erasable Serial Flash Memory With Byte-Alterability and a 25 MHz SPI Bus Interface

Description The M45PE10 is a 1 Mbit (128 Kb x 8 bit) Serial Paged Flash Memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated

STMICROELECTRONICS

意法半导体

1 Mbit, low voltage, Page-Erasable Serial Flash memory with byte-alterability and a 50 MHz SPI bus interface

Description The M45PE10 is a 1 Mbit (128 Kb x 8 bit) Serial Paged Flash Memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated

STMICROELECTRONICS

意法半导体

1-Mbit, page-erasable serial flash memory with byte-alterability and 75 MHz SPI bus interface

Description The M45PE10 is a 1 Mbit (128 Kb x 8 bit) Serial Paged Flash Memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated

NUMONYX

numonyx

1 Mbit, Low Voltage, Page-Erasable Serial Flash Memory With Byte-Alterability and a 25 MHz SPI Bus Interface

Description The M45PE10 is a 1 Mbit (128 Kb x 8 bit) Serial Paged Flash Memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated

STMICROELECTRONICS

意法半导体

M45PE10-VMN6P产品属性

  • 类型

    描述

  • 型号

    M45PE10-VMN6P

  • 功能描述

    闪存 SERIAL FLASH 1 Mbit Datas

  • RoHS

  • 制造商

    ON Semiconductor

  • 数据总线宽度

    1 bit

  • 存储类型

    Flash

  • 存储容量

    2 MB

  • 结构

    256 K x 8

  • 接口类型

    SPI

  • 电源电压-最大

    3.6 V

  • 电源电压-最小

    2.3 V

  • 最大工作电流

    15 mA

  • 工作温度

    - 40 C to + 85 C

  • 安装风格

    SMD/SMT

  • 封装

    Reel

更新时间:2025-8-7 12:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ST
2511
SOP
16900
电子元器件采购降本 30%!盈慧通原厂直采,砍掉中间差价
ST/意法
22+
SOP8
12000
只做原装、原厂优势渠道、假一赔十
Micron
2020+
50000
百分百原装正品 真实公司现货库存 本公司只做原装 可
ST
25+23+
SOP8
35685
绝对原装正品全新进口深圳现货
ST/意法
23+
SOP-8
13000
原厂授权一级代理,专业海外优势订货,价格优势、品种
ST
23+
SOP8
50000
全新原装正品现货,支持订货
ST
23+
SOP
16900
正规渠道,只有原装!
ST/意法
23+
SOP8
50000
全新原装正品现货,支持订货
ST
22+
SMD
41002
原装正品现货
ST(意法)
23+
NA
20094
正纳10年以上分销经验原装进口正品做服务做口碑有支持

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