M45PE10-VMN6价格

参考价格:¥2.6005

型号:M45PE10-VMN6TP 品牌:Micron 备注:这里有M45PE10-VMN6多少钱,2025年最近7天走势,今日出价,今日竞价,M45PE10-VMN6批发/采购报价,M45PE10-VMN6行情走势销售排行榜,M45PE10-VMN6报价。
型号 功能描述 生产厂家 企业 LOGO 操作
M45PE10-VMN6

1 Mbit, Low Voltage, Page-Erasable Serial Flash Memory With Byte-Alterability and a 25 MHz SPI Bus Interface

Description The M45PE10 is a 1 Mbit (128 Kb x 8 bit) Serial Paged Flash Memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated

STMICROELECTRONICS

意法半导体

1 Mbit, low voltage, Page-Erasable Serial Flash memory with byte-alterability and a 50 MHz SPI bus interface

Description The M45PE10 is a 1 Mbit (128 Kb x 8 bit) Serial Paged Flash Memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated

STMICROELECTRONICS

意法半导体

1 Mbit, Low Voltage, Page-Erasable Serial Flash Memory With Byte-Alterability and a 25 MHz SPI Bus Interface

Description The M45PE10 is a 1 Mbit (128 Kb x 8 bit) Serial Paged Flash Memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated

STMICROELECTRONICS

意法半导体

1-Mbit, page-erasable serial flash memory with byte-alterability and 75 MHz SPI bus interface

Description The M45PE10 is a 1 Mbit (128 Kb x 8 bit) Serial Paged Flash Memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated

NUMONYX

1-Mbit, page-erasable serial flash memory with byte-alterability and 75 MHz SPI bus interface

Description The M45PE10 is a 1 Mbit (128 Kb x 8 bit) Serial Paged Flash Memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated

NUMONYX

1 Mbit, low voltage, Page-Erasable Serial Flash memory with byte-alterability and a 50 MHz SPI bus interface

Description The M45PE10 is a 1 Mbit (128 Kb x 8 bit) Serial Paged Flash Memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated

STMICROELECTRONICS

意法半导体

1 Mbit, Low Voltage, Page-Erasable Serial Flash Memory With Byte-Alterability and a 25 MHz SPI Bus Interface

Description The M45PE10 is a 1 Mbit (128 Kb x 8 bit) Serial Paged Flash Memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated

STMICROELECTRONICS

意法半导体

1 Mbit, Low Voltage, Page-Erasable Serial Flash Memory With Byte-Alterability and a 25 MHz SPI Bus Interface

Description The M45PE10 is a 1 Mbit (128 Kb x 8 bit) Serial Paged Flash Memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated

STMICROELECTRONICS

意法半导体

1 Mbit, Low Voltage, Page-Erasable Serial Flash Memory With Byte-Alterability and a 25 MHz SPI Bus Interface

Description The M45PE10 is a 1 Mbit (128 Kb x 8 bit) Serial Paged Flash Memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated

STMICROELECTRONICS

意法半导体

1 Mbit, low voltage, Page-Erasable Serial Flash memory with byte-alterability and a 50 MHz SPI bus interface

Description The M45PE10 is a 1 Mbit (128 Kb x 8 bit) Serial Paged Flash Memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated

STMICROELECTRONICS

意法半导体

1-Mbit, page-erasable serial flash memory with byte-alterability and 75 MHz SPI bus interface

Description The M45PE10 is a 1 Mbit (128 Kb x 8 bit) Serial Paged Flash Memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated

NUMONYX

1-Mbit, page-erasable serial flash memory with byte-alterability and 75 MHz SPI bus interface

Description The M45PE10 is a 1 Mbit (128 Kb x 8 bit) Serial Paged Flash Memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated

NUMONYX

1 Mbit, Low Voltage, Page-Erasable Serial Flash Memory With Byte-Alterability and a 25 MHz SPI Bus Interface

Description The M45PE10 is a 1 Mbit (128 Kb x 8 bit) Serial Paged Flash Memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated

STMICROELECTRONICS

意法半导体

1 Mbit, low voltage, Page-Erasable Serial Flash memory with byte-alterability and a 50 MHz SPI bus interface

Description The M45PE10 is a 1 Mbit (128 Kb x 8 bit) Serial Paged Flash Memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated

STMICROELECTRONICS

意法半导体

封装/外壳:8-SOIC(0.154",3.90mm 宽) 包装:托盘 描述:IC FLASH 1MBIT SPI 75MHZ 8SO 集成电路(IC) 存储器

ETC

知名厂家

Serial NOR Flash

Micron

美光

Serial NOR Flash

Micron

美光

封装/外壳:8-SOIC(0.154",3.90mm 宽) 包装:托盘 描述:IC FLASH 1MBIT SPI 75MHZ 8SO 集成电路(IC) 存储器

ETC

知名厂家

M45PE10-VMN6产品属性

  • 类型

    描述

  • 型号

    M45PE10-VMN6

  • 制造商

    STMICROELECTRONICS

  • 制造商全称

    STMicroelectronics

  • 功能描述

    1 Mbit, Low Voltage, Page-Erasable Serial Flash Memory With Byte-Alterability and a 25 MHz SPI Bus Interface

更新时间:2025-9-28 15:34:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ST
24+
SOP8
90000
一级代理商进口原装现货、假一罚十价格合理
MICRON
22+
SOP8
13911
原装正品,实单请联系
NUM
24+
3000
ST
20+
SOP8
2960
诚信交易大量库存现货
ST/意法半导体
25+
SOP-8
990
全新原装正品支持含税
MICRON/美光
2023+
SO8N
10306
全新原装正品,优势价格
ST/意法
25+
SOP8
54648
百分百原装现货 实单必成 欢迎询价
ST
23+
SOP-8
32732
原装正品代理渠道价格优势
原装STM
19+
SMD
20000
ST
25+
SOP
16900
原装,请咨询

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