型号 功能描述 生产厂家&企业 LOGO 操作
M45PE10-VMN6G

1 Mbit, low voltage, Page-Erasable Serial Flash memory with byte-alterability and a 50 MHz SPI bus interface

Description The M45PE10 is a 1 Mbit (128 Kb x 8 bit) Serial Paged Flash Memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated

STMICROELECTRONICS

意法半导体

M45PE10-VMN6G

1-Mbit, page-erasable serial flash memory with byte-alterability and 75 MHz SPI bus interface

Description The M45PE10 is a 1 Mbit (128 Kb x 8 bit) Serial Paged Flash Memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated

NUMONYX

numonyx

M45PE10-VMN6G

1 Mbit, Low Voltage, Page-Erasable Serial Flash Memory With Byte-Alterability and a 25 MHz SPI Bus Interface

Description The M45PE10 is a 1 Mbit (128 Kb x 8 bit) Serial Paged Flash Memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated

STMICROELECTRONICS

意法半导体

1 Mbit, Low Voltage, Page-Erasable Serial Flash Memory With Byte-Alterability and a 25 MHz SPI Bus Interface

Description The M45PE10 is a 1 Mbit (128 Kb x 8 bit) Serial Paged Flash Memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated

STMICROELECTRONICS

意法半导体

1 Mbit, Low Voltage, Page-Erasable Serial Flash Memory With Byte-Alterability and a 25 MHz SPI Bus Interface

Description The M45PE10 is a 1 Mbit (128 Kb x 8 bit) Serial Paged Flash Memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated

STMICROELECTRONICS

意法半导体

M45PE10-VMN6G产品属性

  • 类型

    描述

  • 型号

    M45PE10-VMN6G

  • 制造商

    STMICROELECTRONICS

  • 制造商全称

    STMicroelectronics

  • 功能描述

    1 Mbit, Low Voltage, Page-Erasable Serial Flash Memory With Byte-Alterability and a 25 MHz SPI Bus Interface

更新时间:2025-8-7 14:28:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ST/意法
05+
SOP-8
1769
原装现货
ST
23+
SOP8
6000
原装正品假一罚百!可开增票!
ST
22+
SMD
41002
原装正品现货
ST
23+
SOP8
8560
受权代理!全新原装现货特价热卖!
ST
20+
SOP8
2960
诚信交易大量库存现货
ST
2025+
SOP8
3635
全新原厂原装产品、公司现货销售
Micron
2020+
50000
百分百原装正品 真实公司现货库存 本公司只做原装 可
STM
09+
SOP8
890
一级代理,专注军工、汽车、医疗、工业、新能源、电力
ST/意法
24+
SOP8
990000
明嘉莱只做原装正品现货
Micron
22+
8SO
9000
原厂渠道,现货配单

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