型号 功能描述 生产厂家 企业 LOGO 操作
M45PE10-VMN6G

1-Mbit, page-erasable serial flash memory with byte-alterability and 75 MHz SPI bus interface

Description The M45PE10 is a 1 Mbit (128 Kb x 8 bit) Serial Paged Flash Memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated

NUMONYX

M45PE10-VMN6G

1 Mbit, low voltage, Page-Erasable Serial Flash memory with byte-alterability and a 50 MHz SPI bus interface

Description The M45PE10 is a 1 Mbit (128 Kb x 8 bit) Serial Paged Flash Memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated

STMICROELECTRONICS

意法半导体

M45PE10-VMN6G

1 Mbit, Low Voltage, Page-Erasable Serial Flash Memory With Byte-Alterability and a 25 MHz SPI Bus Interface

Description The M45PE10 is a 1 Mbit (128 Kb x 8 bit) Serial Paged Flash Memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated

STMICROELECTRONICS

意法半导体

1 Mbit, Low Voltage, Page-Erasable Serial Flash Memory With Byte-Alterability and a 25 MHz SPI Bus Interface

Description The M45PE10 is a 1 Mbit (128 Kb x 8 bit) Serial Paged Flash Memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated

STMICROELECTRONICS

意法半导体

1 Mbit, Low Voltage, Page-Erasable Serial Flash Memory With Byte-Alterability and a 25 MHz SPI Bus Interface

Description The M45PE10 is a 1 Mbit (128 Kb x 8 bit) Serial Paged Flash Memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated

STMICROELECTRONICS

意法半导体

M45PE10-VMN6G产品属性

  • 类型

    描述

  • 型号

    M45PE10-VMN6G

  • 制造商

    STMICROELECTRONICS

  • 制造商全称

    STMicroelectronics

  • 功能描述

    1 Mbit, Low Voltage, Page-Erasable Serial Flash Memory With Byte-Alterability and a 25 MHz SPI Bus Interface

更新时间:2025-9-28 15:30:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ST
24+
SOP8
1769
原装STM
24+
SMD
63200
一级代理/放心采购
ST
20+
SOP8
2960
诚信交易大量库存现货
ST/意法
25+
SMD
54648
百分百原装现货 实单必成
原装STM
19+
SMD
20000
ST
25+
SOP-8
16900
原装,请咨询
ST
2025+
SOP8
3635
全新原厂原装产品、公司现货销售
ST
25+23+
SOP8
35685
绝对原装正品全新进口深圳现货
ST
23+
SOP8
8560
受权代理!全新原装现货特价热卖!
ST/意法
24+
NA/
4750
原装现货,当天可交货,原型号开票

M45PE10-VMN6G芯片相关品牌

M45PE10-VMN6G数据表相关新闻