型号 功能描述 生产厂家 企业 LOGO 操作
M45PE10-VMP6TP

1 Mbit, Low Voltage, Page-Erasable Serial Flash Memory With Byte-Alterability and a 25 MHz SPI Bus Interface

Description The M45PE10 is a 1 Mbit (128 Kb x 8 bit) Serial Paged Flash Memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated

STMICROELECTRONICS

意法半导体

M45PE10-VMP6TP

1 Mbit, low voltage, Page-Erasable Serial Flash memory with byte-alterability and a 50 MHz SPI bus interface

Description The M45PE10 is a 1 Mbit (128 Kb x 8 bit) Serial Paged Flash Memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated

STMICROELECTRONICS

意法半导体

M45PE10-VMP6TP

1-Mbit, page-erasable serial flash memory with byte-alterability and 75 MHz SPI bus interface

Description The M45PE10 is a 1 Mbit (128 Kb x 8 bit) Serial Paged Flash Memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated

NUMONYX

1 Mbit, Low Voltage, Page-Erasable Serial Flash Memory With Byte-Alterability and a 25 MHz SPI Bus Interface

Description The M45PE10 is a 1 Mbit (128 Kb x 8 bit) Serial Paged Flash Memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated

STMICROELECTRONICS

意法半导体

1 Mbit, low voltage, Page-Erasable Serial Flash memory with byte-alterability and a 50 MHz SPI bus interface

Description The M45PE10 is a 1 Mbit (128 Kb x 8 bit) Serial Paged Flash Memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated

STMICROELECTRONICS

意法半导体

1 Mbit, Low Voltage, Page-Erasable Serial Flash Memory With Byte-Alterability and a 25 MHz SPI Bus Interface

Description The M45PE10 is a 1 Mbit (128 Kb x 8 bit) Serial Paged Flash Memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated

STMICROELECTRONICS

意法半导体

1-Mbit, page-erasable serial flash memory with byte-alterability and 75 MHz SPI bus interface

Description The M45PE10 is a 1 Mbit (128 Kb x 8 bit) Serial Paged Flash Memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated

NUMONYX

1 Mbit, Low Voltage, Page-Erasable Serial Flash Memory With Byte-Alterability and a 25 MHz SPI Bus Interface

Description The M45PE10 is a 1 Mbit (128 Kb x 8 bit) Serial Paged Flash Memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated

STMICROELECTRONICS

意法半导体

M45PE10-VMP6TP产品属性

  • 类型

    描述

  • 型号

    M45PE10-VMP6TP

  • 制造商

    NUMONYX

  • 制造商全称

    Numonyx B.V

  • 功能描述

    1-Mbit, page-erasable serial flash memory with byte-alterability and 75 MHz SPI bus interface

更新时间:2025-9-28 12:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ST
2511
SOP-8
16900
电子元器件采购降本 30%!盈慧通原厂直采,砍掉中间差价
ST
25+
SOP-8
16900
原装,请咨询
ST
24+
SOP
30000
原装正品公司现货,假一赔十!
ST
2025+
SOP-8
3645
全新原厂原装产品、公司现货销售
ST
24+
SOP
6000
全新原装深圳仓库现货有单必成
ST/意法
23+
SOP-8
89630
当天发货全新原装现货
ST/意法
23+
SOP-8
13000
原厂授权一级代理,专业海外优势订货,价格优势、品种
ST
23+
SOP-8
16900
正规渠道,只有原装!
ST/意法
23+
SOP8
50000
全新原装正品现货,支持订货
ST/意法
25+
SOP-8
54658
百分百原装现货 实单必成

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