位置:M45PE10-VMN6TG > M45PE10-VMN6TG详情

M45PE10-VMN6TG中文资料

厂家型号

M45PE10-VMN6TG

文件大小

355.05Kbytes

页面数量

45

功能描述

1 Mbit, low voltage, Page-Erasable Serial Flash memory with byte-alterability and a 50 MHz SPI bus interface

1-Mbit, page-erasable serial flash memory with byte-alterability and 75 MHz SPI bus interface

数据手册

下载地址一下载地址二到原厂下载

生产厂商

STMICROELECTRONICS

M45PE10-VMN6TG数据手册规格书PDF详情

Description

The M45PE10 is a 1 Mbit (128 Kb x 8 bit) Serial Paged Flash Memory accessed by a high speed SPI-compatible bus.

The memory can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated Page Erase cycle followed by a Page Program cycle.

Features

■ SPI bus compatible serial interface

■ 50 MHz clock rate (maximum)

■ 2.7 V to 3.6 V single supply voltage

■ 1 Mbit of Page-Erasable Flash memory

■ Page size: 256 bytes

– Page Write in 11ms (typical)

– Page Program in 0.8 ms (typical)

– Page Erase in 10 ms (typical)

■ Sector Erase (512 Kbit)

■ Hardware Write protection of the bottom sector (64 Kbytes)

■ Electronic signature

– JEDEC standard two-byte signature (4011h)

■ Deep Power-down mode 1 µA (typical)

■ More than 100 000 Write cycles

■ More than 20 years’ data retention

■ Packages

– ECOPACK® (RoHS compliant)

M45PE10-VMN6TG产品属性

  • 类型

    描述

  • 型号

    M45PE10-VMN6TG

  • 制造商

    NUMONYX

  • 制造商全称

    Numonyx B.V

  • 功能描述

    1-Mbit, page-erasable serial flash memory with byte-alterability and 75 MHz SPI bus interface

更新时间:2025-10-7 16:00:00
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