M29W640价格
参考价格：￥8.7925
型号：M29W640FB70N6E 品牌：MICRON 备注：这里有M29W640多少钱，2026年最近7天走势，今日出价，今日竞价，M29W640批发/采购报价，M29W640行情走势销售排行榜，M29W640报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
FLASH NOR HIGH DENSITY & CONSUMER Family Overview ➤ Densities from 32Mb to 64Mb ➤ 0.15µm process technology ➤ Wide application area covered ➤ technology shrink on going ➤ higher densities ➤ improved performances ➤ Increased reliability Main Features ➤ 32Mb (4Mbx8 / 2Mbx16), Boot Block ➤ Access Time | STMICROELECTRONICS 意法半导体 |   | ||
64 Mbit 8Mb x8 or 4Mb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M29W640D is a 64 Mbit (8Mb x8 or 4Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode. The memory is divided into blocks | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit 8Mb x8 or 4Mb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M29W640D is a 64 Mbit (8Mb x8 or 4Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode. The memory is divided into blocks | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit 8Mb x8 or 4Mb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M29W640D is a 64 Mbit (8Mb x8 or 4Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode. The memory is divided into blocks | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit 8Mb x8 or 4Mb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M29W640D is a 64 Mbit (8Mb x8 or 4Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode. The memory is divided into blocks | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit 8Mb x8 or 4Mb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M29W640D is a 64 Mbit (8Mb x8 or 4Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode. The memory is divided into blocks | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit 8Mb x8 or 4Mb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M29W640D is a 64 Mbit (8Mb x8 or 4Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode. The memory is divided into blocks | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit 8Mb x8 or 4Mb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M29W640D is a 64 Mbit (8Mb x8 or 4Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode. The memory is divided into blocks | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit 8Mb x8 or 4Mb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M29W640D is a 64 Mbit (8Mb x8 or 4Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode. The memory is divided into blocks | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit 8Mb x8 or 4Mb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M29W640D is a 64 Mbit (8Mb x8 or 4Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode. The memory is divided into blocks | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit 8Mb x8 or 4Mb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M29W640D is a 64 Mbit (8Mb x8 or 4Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode. The memory is divided into blocks | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit 8Mb x8 or 4Mb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M29W640D is a 64 Mbit (8Mb x8 or 4Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode. The memory is divided into blocks | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit 8Mb x8 or 4Mb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M29W640D is a 64 Mbit (8Mb x8 or 4Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode. The memory is divided into blocks | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit 8Mb x8 or 4Mb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M29W640D is a 64 Mbit (8Mb x8 or 4Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode. The memory is divided into blocks | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit 8Mb x8 or 4Mb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M29W640D is a 64 Mbit (8Mb x8 or 4Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode. The memory is divided into blocks | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit 8Mb x8 or 4Mb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M29W640D is a 64 Mbit (8Mb x8 or 4Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode. The memory is divided into blocks | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit 8Mb x8 or 4Mb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M29W640D is a 64 Mbit (8Mb x8 or 4Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode. The memory is divided into blocks | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit 8Mb x8 or 4Mb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M29W640D is a 64 Mbit (8Mb x8 or 4Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode. The memory is divided into blocks | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit 8Mb x8 or 4Mb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M29W640D is a 64 Mbit (8Mb x8 or 4Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode. The memory is divided into blocks | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit 8Mb x8 or 4Mb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M29W640D is a 64 Mbit (8Mb x8 or 4Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode. The memory is divided into blocks | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit 8Mb x8 or 4Mb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M29W640D is a 64 Mbit (8Mb x8 or 4Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode. The memory is divided into blocks | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit 8Mb x8 or 4Mb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M29W640D is a 64 Mbit (8Mb x8 or 4Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode. The memory is divided into blocks | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit 8Mb x8 or 4Mb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M29W640D is a 64 Mbit (8Mb x8 or 4Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode. The memory is divided into blocks | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit 8Mb x8 or 4Mb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M29W640D is a 64 Mbit (8Mb x8 or 4Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode. The memory is divided into blocks | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit 8Mb x8 or 4Mb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M29W640D is a 64 Mbit (8Mb x8 or 4Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode. The memory is divided into blocks | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit 8Mb x8 or 4Mb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M29W640D is a 64 Mbit (8Mb x8 or 4Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode. The memory is divided into blocks | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit 8Mb x8 or 4Mb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M29W640D is a 64 Mbit (8Mb x8 or 4Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode. The memory is divided into blocks | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit 8Mb x8 or 4Mb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M29W640D is a 64 Mbit (8Mb x8 or 4Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode. The memory is divided into blocks | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit 8Mb x8 or 4Mb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M29W640D is a 64 Mbit (8Mb x8 or 4Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode. The memory is divided into blocks | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit 8Mb x8 or 4Mb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M29W640D is a 64 Mbit (8Mb x8 or 4Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode. The memory is divided into blocks | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit 8Mb x8 or 4Mb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M29W640D is a 64 Mbit (8Mb x8 or 4Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode. The memory is divided into blocks | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit 8Mb x8 or 4Mb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M29W640D is a 64 Mbit (8Mb x8 or 4Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode. The memory is divided into blocks | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit 8Mb x8 or 4Mb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M29W640D is a 64 Mbit (8Mb x8 or 4Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode. The memory is divided into blocks | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit 8Mb x8 or 4Mb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M29W640D is a 64 Mbit (8Mb x8 or 4Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode. The memory is divided into blocks | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit 8Mb x8 or 4Mb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M29W640D is a 64 Mbit (8Mb x8 or 4Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode. The memory is divided into blocks | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit 8Mb x8 or 4Mb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M29W640D is a 64 Mbit (8Mb x8 or 4Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode. The memory is divided into blocks | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit 8Mb x8 or 4Mb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M29W640D is a 64 Mbit (8Mb x8 or 4Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode. The memory is divided into blocks | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit 8Mb x8 or 4Mb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M29W640D is a 64 Mbit (8Mb x8 or 4Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode. The memory is divided into blocks | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit 8Mb x8 or 4Mb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M29W640D is a 64 Mbit (8Mb x8 or 4Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode. The memory is divided into blocks | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit 8Mb x8 or 4Mb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M29W640D is a 64 Mbit (8Mb x8 or 4Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode. The memory is divided into blocks | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit 8Mb x8 or 4Mb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M29W640D is a 64 Mbit (8Mb x8 or 4Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode. The memory is divided into blocks | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit 8Mb x8 or 4Mb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M29W640D is a 64 Mbit (8Mb x8 or 4Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode. The memory is divided into blocks | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit 8Mb x8 or 4Mb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M29W640D is a 64 Mbit (8Mb x8 or 4Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode. The memory is divided into blocks | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit 8Mb x8 or 4Mb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M29W640D is a 64 Mbit (8Mb x8 or 4Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode. The memory is divided into blocks | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit 8Mb x8 or 4Mb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M29W640D is a 64 Mbit (8Mb x8 or 4Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode. The memory is divided into blocks | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit 8Mb x8 or 4Mb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M29W640D is a 64 Mbit (8Mb x8 or 4Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode. The memory is divided into blocks | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit 8Mb x8 or 4Mb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M29W640D is a 64 Mbit (8Mb x8 or 4Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode. The memory is divided into blocks | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit 8Mb x8 or 4Mb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M29W640D is a 64 Mbit (8Mb x8 or 4Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode. The memory is divided into blocks | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit 8Mb x8 or 4Mb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M29W640D is a 64 Mbit (8Mb x8 or 4Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode. The memory is divided into blocks | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit 8Mb x8 or 4Mb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M29W640D is a 64 Mbit (8Mb x8 or 4Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode. The memory is divided into blocks | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit 8Mb x8 or 4Mb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M29W640D is a 64 Mbit (8Mb x8 or 4Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode. The memory is divided into blocks | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit (8Mb x8 or 4Mb x16, Page, Boot Block) 3V Supply Flash Memory Summary description The M29W640F is a 64 Mbit (8Mb x8 or 4Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode. The memory is divided into blocks | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit (8Mb x8 or 4Mb x16, Page, Boot Block) 3V Supply Flash Memory Summary description The M29W640F is a 64 Mbit (8Mb x8 or 4Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode. The memory is divided into blocks | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit (8Mb x8 or 4Mb x16, Page, Boot Block) 3V Supply Flash Memory Summary description The M29W640F is a 64 Mbit (8Mb x8 or 4Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode. The memory is divided into blocks | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit (8Mb x8 or 4Mb x16, Page, Boot Block) 3V Supply Flash Memory Summary description The M29W640F is a 64 Mbit (8Mb x8 or 4Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode. The memory is divided into blocks | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit (8Mb x8 or 4Mb x16, Page, Boot Block) 3V Supply Flash Memory Summary description The M29W640F is a 64 Mbit (8Mb x8 or 4Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode. The memory is divided into blocks | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit (8Mb x8 or 4Mb x16, Page, Boot Block) 3V Supply Flash Memory Summary description The M29W640F is a 64 Mbit (8Mb x8 or 4Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode. The memory is divided into blocks | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit (8Mb x8 or 4Mb x16, Page, Boot Block) 3V Supply Flash Memory Summary description The M29W640F is a 64 Mbit (8Mb x8 or 4Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode. The memory is divided into blocks | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit (8Mb x8 or 4Mb x16, Page, Boot Block) 3V Supply Flash Memory Summary description The M29W640F is a 64 Mbit (8Mb x8 or 4Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode. The memory is divided into blocks | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit (8Mb x8 or 4Mb x16, Page, Boot Block) 3V Supply Flash Memory Summary description The M29W640F is a 64 Mbit (8Mb x8 or 4Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode. The memory is divided into blocks | STMICROELECTRONICS 意法半导体 | |
M29W640产品属性
- 类型
描述
- Speed：
NSRMHz
- MT/s：
NSRMTPS
- I/O Voltage：
3.0 VOLTS
- Operating Temp：
-40C to +85C
- Bus Width：
x16
- Pin Count：
48-pin
- Part Status Code：
Obsolete
- Component Config：
4M x16
- Dry Pack Qty：
576
- Package Dimension (W x L x H) mm：
12.00 x 20.00 x 1.20
- Number of Components：
1
- Part Type：
COMPONENT
- Package：
TSOP
- Family：
NOR FLASH
- Technology：
PARALLEL
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
UTC |
25+ |
SOP8 |
10065 |
原装正品,有挂有货,假一赔十 |
|||
UTC |
24+ |
SOP-8 |
5000 |
全新原装正品,现货销售 |
|||
24+ |
SOP |
3000 |
公司存货 |
||||
ON/安森美 |
24+ |
SOP14 |
9600 |
原装现货,优势供应,支持实单! |
|||
UTC(友顺) |
2447 |
SOP8 |
315000 |
2500个/卷一级代理专营品牌!原装正品,优势现货,长 |
|||
N/A |
20+ |
MSOP10 |
2960 |
诚信交易大量库存现货 |
|||
UTC |
25+ |
SOP-8 T/R |
20000 |
原装正品价格优惠,志同道合共谋发展 |
|||
MORIMATSU |
13+ |
TB |
210 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
ON/安森美 |
1027+ |
SOP14 |
5 |
只做原装正品 |
|||
DIODES/美台 |
26+ |
43600 |
全新原装现货,假一赔十 |
M29W640芯片相关品牌
M29W640规格书下载地址
M29W640参数引脚图相关
- MP4
- MP3
- mos晶体管
- mos管
- MOSFET
- molex连接器
- mega16
- MCU
- mc34063
- mb881
- mb402
- max7219
- max706s
- max485esa
- max485csa
- max3232cse
- max232cse
- max232
- m628
- m358
- M2FM3
- M2FL20U
- M2FH3
- M2F60
- M2EC_15
- M2E_15
- M2D810
- M2D2428
- M2D2025
- M2D1822
- M2D160
- M2BJ-BH
- M2BJ-B
- M2BC_15
- M2B_15
- M2AS1
- M2AMS2
- M2AMS
- M2ADS
- M2AC_15
- M29W800DB70N6F
- M29W800DB70N6E
- M29W800DB45ZE6F
- M29W800DB45N6E
- M29W640GT70NA6E
- M29W640GT70N3F
- M29W640GL70ZF6E
- M29W640GL70NB6E
- M29W640GL70NA6E
- M29W640GH70ZF6E
- M29W640GH70ZA6E
- M29W640GH70NA6E
- M29W640GB70ZF3F
- M29W640GB70ZA6E
- M29W640GB70NA6E
- M29W640FT70ZA6E
- M29W640FT70N6E
- M29W640FB70ZA6E
- M29W640FB70N6F
- M29W640FB70N6E
- M29W512GH7AN6E
- M29W400DT70ZE6E
- M29W400DT70N6E
- M29W400DT55N6E
- M29W400DB70ZE6E
- M29W400DB70N6E
- M29W400DB55N6F
- M29W400DB55N6E
- M29W400
- M29W320ET70ZE6E
- M29W320ET70N6E
- M29W320EB70ZE6E
- M29W320EB70N6E
- M29W320DT70N6E
- M29W320DT70N3E
- M29W320DB70ZE6E
- M29W320DB70N6E
- M29W320DB70N3E
- M29W256GSH70ZS6F
- M29W256GL7AN6E
- M29W256GL70ZS6E
- M29W160
- M29W102
- M29W040
- M29W022
- M29W004
- M29F512
- M29F400
- M29F200
- M29F160
- M29F100
- M29F040
- M29F010
- M29F002
- M2954
- M2951
- M2950
- M293B1
- M293010
- M29150B
M29W640数据表相关新闻
M2S010-TQG144
ARM® Cortex®-M3 嵌入式 - 片上系统 (SoC) IC SmartFusion®2 FPGA - 10K 逻辑模块 166MHz 144-TQFP（20x20）
2024-1-4M2GL150-FCVG484I
进口代理
2022-10-8M29W320ET70N6E 假一罚十
原装正品 欢迎来电咨询！
2020-12-9M29W256GH70N6E公司大量原装正品现货/长期供应
瀚佳科技(深圳)有限公司 专业为工厂一站式BOM配单服务
2019-6-10M29W160ET-70N6公司大量原装正品现货/长期供应
瀚佳科技(深圳)有限公司 专业为工厂一站式BOM配单服务
2019-6-10M29W800DT70N6E天芯科技优势渠道积累-货源稳定-价格优势
深圳市天芯半导体科技有限公司 0755-82725660 17727837185（微信75056055） QQ：177691499
2019-2-26
DdatasheetPDF页码索引
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