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M29W640FB70ZA6F中文资料

厂家型号

M29W640FB70ZA6F

文件大小

478.8Kbytes

页面数量

72

功能描述

64 Mbit (8Mb x8 or 4Mb x16, Page, Boot Block) 3V Supply Flash Memory

NOR Flash Parallel 3V/3.3V 64Mbit 8M/4M x 8bit/16bit 70ns 48-Pin TFBGA T/R

数据手册

原厂下载下载地址一下载地址二到原厂下载

生产厂商

STMICROELECTRONICS

M29W640FB70ZA6F数据手册规格书PDF详情

Summary description

The M29W640F is a 64 Mbit (8Mb x8 or 4Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode.

The memory is divided into blocks that can be erased independently so it is possible to preserve valid data while old data is erased. Blocks can be protected in units of 256 KByte (generally groups of four 64 KByte blocks), to prevent accidental Program or Erase commands from modifying the memory. Program and Erase commands are written to the Command Interface of the memory. An on-chip Program/Erase Controller simplifies the process of programming or erasing the memory by taking care of all of the special operations that are required to update the memory contents. The end of a program or erase operation can be detected and any error conditions identified. The command set required to control the memory is consistent with JEDEC standards.

Features summary

■ Supply Voltage

– VCC = 2.7V to 3.6V for Program, Erase, Read

– VPP =12 V for Fast Program (optional)

■ Asynchronous Random/Page Read

– Page Width: 4 Words

– Page Access: 25ns

– Random Access: 60ns, 70ns

■ Programming Time

– 10 µs per Byte/Word typical

– 4 Words/8 Bytes Program

■ 135 memory blocks

– 1 Boot Block and 7 Parameter Blocks, 8 KBytes each (Top or Bottom Location)

– 127 Main Blocks, 64 KBytes each

■ Program/Erase Controller

– Embedded Byte/Word Program algorithms

■ Program/Erase Suspend and Resume

– Read from any Block during Program Suspend

– Read and Program another Block during Erase Suspend

■ Unlock Bypass Program command

– Faster Production/Batch Programming

■ VPP/WP pin for Fast Program and Write Protect

■ Temporary Block Unprotection mode

■ Common Flash Interface

– 64-bit Security Code

■ Extended Memory Block

– Extra block used as security block or to store additional information

■ Low power consumption

– Standby and Automatic Standby

■ 100,000 Program/Erase cycles per block

M29W640FB70ZA6F产品属性

  • 类型

    描述

  • 型号

    M29W640FB70ZA6F

  • 制造商

    Micron Technology Inc

  • 功能描述

    NOR Flash Parallel 3V/3.3V 64Mbit 8M/4M x 8bit/16bit 70ns 48-Pin TFBGA T/R

  • 制造商

    Micron Technology Inc

  • 功能描述

    64MBIT PARALLEL NOR FLASH

  • 制造商

    Micron Technology Inc

  • 功能描述

    FLASH PARALLEL 3V/3.3V 64MBIT 8MX8/4MX16 70NS 48TFBGA - Tape and Reel

更新时间:2025-10-15 16:12:00
供应商 型号 品牌 批号 封装 库存 备注 价格
MICRON/美光
2404+
BGA
3300
现货正品原装,假一赔十
MICRON/美光
2447
SMD
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
MICRON/镁光
21+
48TFBGA
6000
全新原装 现货 价优
MICRON/美光
23+
48TFBGA
50000
全新原装正品现货,支持订货
MICRON/美光
22+
48TFBGA
12245
现货,原厂原装假一罚十!
MICRON/美光
21+
48TFBGA
19600
一站式BOM配单
MICRON/美光
2023+
48TFBGA
2500
原厂全新正品旗舰店优势现货
MICRON/美光
25+
48TFBGA
19600
一站式BOM配单
MRON/美光
24+
NA/
2500
优势代理渠道,原装正品,可全系列订货开增值税票
MICRON/镁光
23+
48TFBGA
6000
专业配单保证原装正品假一罚十