位置：首页 > IC中文资料第40页 > M29W640D
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
M29W640D | FLASH NOR HIGH DENSITY & CONSUMER Family Overview ➤ Densities from 32Mb to 64Mb ➤ 0.15µm process technology ➤ Wide application area covered ➤ technology shrink on going ➤ higher densities ➤ improved performances ➤ Increased reliability Main Features ➤ 32Mb (4Mbx8 / 2Mbx16), Boot Block ➤ Access Time | STMICROELECTRONICS 意法半导体 |   | |
64 Mbit 8Mb x8 or 4Mb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M29W640D is a 64 Mbit (8Mb x8 or 4Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode. The memory is divided into blocks | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit 8Mb x8 or 4Mb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M29W640D is a 64 Mbit (8Mb x8 or 4Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode. The memory is divided into blocks | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit 8Mb x8 or 4Mb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M29W640D is a 64 Mbit (8Mb x8 or 4Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode. The memory is divided into blocks | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit 8Mb x8 or 4Mb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M29W640D is a 64 Mbit (8Mb x8 or 4Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode. The memory is divided into blocks | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit 8Mb x8 or 4Mb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M29W640D is a 64 Mbit (8Mb x8 or 4Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode. The memory is divided into blocks | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit 8Mb x8 or 4Mb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M29W640D is a 64 Mbit (8Mb x8 or 4Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode. The memory is divided into blocks | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit 8Mb x8 or 4Mb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M29W640D is a 64 Mbit (8Mb x8 or 4Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode. The memory is divided into blocks | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit 8Mb x8 or 4Mb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M29W640D is a 64 Mbit (8Mb x8 or 4Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode. The memory is divided into blocks | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit 8Mb x8 or 4Mb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M29W640D is a 64 Mbit (8Mb x8 or 4Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode. The memory is divided into blocks | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit 8Mb x8 or 4Mb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M29W640D is a 64 Mbit (8Mb x8 or 4Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode. The memory is divided into blocks | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit 8Mb x8 or 4Mb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M29W640D is a 64 Mbit (8Mb x8 or 4Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode. The memory is divided into blocks | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit 8Mb x8 or 4Mb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M29W640D is a 64 Mbit (8Mb x8 or 4Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode. The memory is divided into blocks | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit 8Mb x8 or 4Mb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M29W640D is a 64 Mbit (8Mb x8 or 4Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode. The memory is divided into blocks | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit 8Mb x8 or 4Mb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M29W640D is a 64 Mbit (8Mb x8 or 4Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode. The memory is divided into blocks | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit 8Mb x8 or 4Mb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M29W640D is a 64 Mbit (8Mb x8 or 4Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode. The memory is divided into blocks | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit 8Mb x8 or 4Mb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M29W640D is a 64 Mbit (8Mb x8 or 4Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode. The memory is divided into blocks | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit 8Mb x8 or 4Mb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M29W640D is a 64 Mbit (8Mb x8 or 4Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode. The memory is divided into blocks | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit 8Mb x8 or 4Mb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M29W640D is a 64 Mbit (8Mb x8 or 4Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode. The memory is divided into blocks | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit 8Mb x8 or 4Mb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M29W640D is a 64 Mbit (8Mb x8 or 4Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode. The memory is divided into blocks | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit 8Mb x8 or 4Mb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M29W640D is a 64 Mbit (8Mb x8 or 4Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode. The memory is divided into blocks | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit 8Mb x8 or 4Mb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M29W640D is a 64 Mbit (8Mb x8 or 4Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode. The memory is divided into blocks | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit 8Mb x8 or 4Mb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M29W640D is a 64 Mbit (8Mb x8 or 4Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode. The memory is divided into blocks | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit 8Mb x8 or 4Mb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M29W640D is a 64 Mbit (8Mb x8 or 4Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode. The memory is divided into blocks | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit 8Mb x8 or 4Mb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M29W640D is a 64 Mbit (8Mb x8 or 4Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode. The memory is divided into blocks | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit 8Mb x8 or 4Mb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M29W640D is a 64 Mbit (8Mb x8 or 4Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode. The memory is divided into blocks | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit 8Mb x8 or 4Mb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M29W640D is a 64 Mbit (8Mb x8 or 4Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode. The memory is divided into blocks | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit 8Mb x8 or 4Mb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M29W640D is a 64 Mbit (8Mb x8 or 4Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode. The memory is divided into blocks | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit 8Mb x8 or 4Mb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M29W640D is a 64 Mbit (8Mb x8 or 4Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode. The memory is divided into blocks | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit 8Mb x8 or 4Mb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M29W640D is a 64 Mbit (8Mb x8 or 4Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode. The memory is divided into blocks | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit 8Mb x8 or 4Mb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M29W640D is a 64 Mbit (8Mb x8 or 4Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode. The memory is divided into blocks | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit 8Mb x8 or 4Mb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M29W640D is a 64 Mbit (8Mb x8 or 4Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode. The memory is divided into blocks | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit 8Mb x8 or 4Mb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M29W640D is a 64 Mbit (8Mb x8 or 4Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode. The memory is divided into blocks | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit 8Mb x8 or 4Mb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M29W640D is a 64 Mbit (8Mb x8 or 4Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode. The memory is divided into blocks | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit 8Mb x8 or 4Mb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M29W640D is a 64 Mbit (8Mb x8 or 4Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode. The memory is divided into blocks | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit 8Mb x8 or 4Mb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M29W640D is a 64 Mbit (8Mb x8 or 4Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode. The memory is divided into blocks | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit 8Mb x8 or 4Mb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M29W640D is a 64 Mbit (8Mb x8 or 4Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode. The memory is divided into blocks | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit 8Mb x8 or 4Mb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M29W640D is a 64 Mbit (8Mb x8 or 4Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode. The memory is divided into blocks | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit 8Mb x8 or 4Mb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M29W640D is a 64 Mbit (8Mb x8 or 4Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode. The memory is divided into blocks | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit 8Mb x8 or 4Mb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M29W640D is a 64 Mbit (8Mb x8 or 4Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode. The memory is divided into blocks | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit 8Mb x8 or 4Mb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M29W640D is a 64 Mbit (8Mb x8 or 4Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode. The memory is divided into blocks | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit 8Mb x8 or 4Mb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M29W640D is a 64 Mbit (8Mb x8 or 4Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode. The memory is divided into blocks | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit 8Mb x8 or 4Mb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M29W640D is a 64 Mbit (8Mb x8 or 4Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode. The memory is divided into blocks | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit 8Mb x8 or 4Mb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M29W640D is a 64 Mbit (8Mb x8 or 4Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode. The memory is divided into blocks | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit 8Mb x8 or 4Mb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M29W640D is a 64 Mbit (8Mb x8 or 4Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode. The memory is divided into blocks | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit 8Mb x8 or 4Mb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M29W640D is a 64 Mbit (8Mb x8 or 4Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode. The memory is divided into blocks | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit 8Mb x8 or 4Mb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M29W640D is a 64 Mbit (8Mb x8 or 4Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode. The memory is divided into blocks | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit 8Mb x8 or 4Mb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M29W640D is a 64 Mbit (8Mb x8 or 4Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode. The memory is divided into blocks | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit 8Mb x8 or 4Mb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M29W640D is a 64 Mbit (8Mb x8 or 4Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode. The memory is divided into blocks | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit 8Mb x8 or 4Mb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M29W640D is a 64 Mbit (8Mb x8 or 4Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode. The memory is divided into blocks | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit 8Mb x8 or 4Mb x16, Boot Block 3V Supply Flash Memory SUMMARY DESCRIPTION The M29W640D is a 64 Mbit (8Mb x8 or 4Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode. The memory is divided into blocks | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit 8Mb x8 or 4Mb x16, Boot Block 3V Supply Flash Memory | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit (8Mb x8 or 4Mb x16, Page, Boot Block) 3V Supply Flash Memory Summary description The M29W640F is a 64 Mbit (8Mb x8 or 4Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode. The memory is divided into blocks | STMICROELECTRONICS 意法半导体 | | ||
64 Mbit (8Mb x8 or 4Mb x16, Page, Boot Block) 3V Supply Flash Memory 文件：1.40752 Mbytes Page：71 Pages | NUMONYX | |
M29W640D产品属性
- 类型
描述
- 型号
M29W640D
- 功能描述
闪存 8Mx8 or 4Mx16 90ns
- RoHS
否
- 制造商
ON Semiconductor
- 数据总线宽度
1 bit
- 存储类型
Flash
- 存储容量
2 MB
- 结构
256 K x 8
- 接口类型
SPI
- 电源电压-最大
3.6 V
- 电源电压-最小
2.3 V
- 最大工作电流
15 mA
- 工作温度
- 40 C to + 85 C
- 安装风格
SMD/SMT
- 封装
Reel
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST/意法 |
24+ |
NA/ |
2304 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
ST |
2016+ |
TSOP |
3500 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
ST |
23+ |
NA |
20000 |
全新原装假一赔十 |
|||
ST |
05+ |
TSOP/48 |
2903 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
ST/意法 |
24+ |
TSOP48 |
880000 |
明嘉莱只做原装正品现货 |
|||
ST |
24+ |
QFP |
20000 |
全新原厂原装，进口正品现货，正规渠道可含税！！ |
|||
ST |
22+ |
TSOP |
12245 |
现货,原厂原装假一罚十! |
|||
ST |
25+ |
TSOP |
2987 |
只售原装自家现货!诚信经营!欢迎来电! |
|||
SST |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
||||
ST |
2025+ |
TSOP |
5378 |
全新原厂原装产品、公司现货销售 |
M29W640D规格书下载地址
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- M29150B
M29W640D数据表相关新闻
M2S010-TQG144
ARM® Cortex®-M3 嵌入式 - 片上系统 (SoC) IC SmartFusion®2 FPGA - 10K 逻辑模块 166MHz 144-TQFP（20x20）
2024-1-4M2GL150-FCVG484I
进口代理
2022-10-8M29W320ET70N6E 假一罚十
原装正品 欢迎来电咨询！
2020-12-9M29W256GH70N6E公司大量原装正品现货/长期供应
瀚佳科技(深圳)有限公司 专业为工厂一站式BOM配单服务
2019-6-10M29W160ET-70N6公司大量原装正品现货/长期供应
瀚佳科技(深圳)有限公司 专业为工厂一站式BOM配单服务
2019-6-10M29W800DT70N6E天芯科技优势渠道积累-货源稳定-价格优势
深圳市天芯半导体科技有限公司 0755-82725660 17727837185（微信75056055） QQ：177691499
2019-2-26
DdatasheetPDF页码索引
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