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M29W640FB70N6E中文资料

厂家型号

M29W640FB70N6E

文件大小

478.8Kbytes

页面数量

72

功能描述

64 Mbit (8Mb x8 or 4Mb x16, Page, Boot Block) 3V Supply Flash Memory

闪存 64 Mbit Boot Block 3V STD 闪存

数据手册

原厂下载下载地址一下载地址二到原厂下载

生产厂商

STMICROELECTRONICS

M29W640FB70N6E数据手册规格书PDF详情

Summary description

The M29W640F is a 64 Mbit (8Mb x8 or 4Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode.

The memory is divided into blocks that can be erased independently so it is possible to preserve valid data while old data is erased. Blocks can be protected in units of 256 KByte (generally groups of four 64 KByte blocks), to prevent accidental Program or Erase commands from modifying the memory. Program and Erase commands are written to the Command Interface of the memory. An on-chip Program/Erase Controller simplifies the process of programming or erasing the memory by taking care of all of the special operations that are required to update the memory contents. The end of a program or erase operation can be detected and any error conditions identified. The command set required to control the memory is consistent with JEDEC standards.

Features summary

■ Supply Voltage

– VCC = 2.7V to 3.6V for Program, Erase, Read

– VPP =12 V for Fast Program (optional)

■ Asynchronous Random/Page Read

– Page Width: 4 Words

– Page Access: 25ns

– Random Access: 60ns, 70ns

■ Programming Time

– 10 µs per Byte/Word typical

– 4 Words/8 Bytes Program

■ 135 memory blocks

– 1 Boot Block and 7 Parameter Blocks, 8 KBytes each (Top or Bottom Location)

– 127 Main Blocks, 64 KBytes each

■ Program/Erase Controller

– Embedded Byte/Word Program algorithms

■ Program/Erase Suspend and Resume

– Read from any Block during Program Suspend

– Read and Program another Block during Erase Suspend

■ Unlock Bypass Program command

– Faster Production/Batch Programming

■ VPP/WP pin for Fast Program and Write Protect

■ Temporary Block Unprotection mode

■ Common Flash Interface

– 64-bit Security Code

■ Extended Memory Block

– Extra block used as security block or to store additional information

■ Low power consumption

– Standby and Automatic Standby

■ 100,000 Program/Erase cycles per block

M29W640FB70N6E产品属性

  • 类型

    描述

  • 型号

    M29W640FB70N6E

  • 功能描述

    闪存 64 Mbit Boot Block 3V STD 闪存

  • RoHS

  • 制造商

    ON Semiconductor

  • 数据总线宽度

    1 bit

  • 存储类型

    Flash

  • 存储容量

    2 MB

  • 结构

    256 K x 8

  • 接口类型

    SPI

  • 电源电压-最大

    3.6 V

  • 电源电压-最小

    2.3 V

  • 最大工作电流

    15 mA

  • 工作温度

    - 40 C to + 85 C

  • 安装风格

    SMD/SMT

  • 封装

    Reel

更新时间:2025-12-24 13:59:00
供应商 型号 品牌 批号 封装 库存 备注 价格
MICRON/镁光
25+
TSOP48
12500
专营美光原装现货
MICRON
24+
TSOP48
2788
原装正品,现货库存,1小时内发货
MICRON/美光
25+
TSOP48
32360
MICRON/美光全新特价M29W640FB70N6E即刻询购立享优惠#长期有货
ST
25+
TSOP48
18600
百分百原装正品 真实公司现货库存 本公司只做原装 可
MICRON
24+
TSOP-48
9300
MICRON专营原装进口现货
MICRON
2021+
TSOP-48
9450
原装现货。
MICRON
22+
TSOP48
9035
原装正品,实单请联系
MICRON/镁光
22+
TSOP48
3000
支持任何机构检测 只做原装正品
MICRON/美光
23+
TSOP
98900
原厂原装正品现货!!
MICRON
23+
BGA
2529
原厂原装正品

M29W640FB70N6E 价格

参考价格:¥8.7925

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