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M29W640DB

64 Mbit 8Mb x8 or 4Mb x16, Boot Block 3V Supply Flash Memory

SUMMARY DESCRIPTION The M29W640D is a 64 Mbit (8Mb x8 or 4Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode. The memory is divided into blocks

STMICROELECTRONICS

意法半导体

M29W640DB

64 Mbit 8Mb x8 or 4Mb x16, Boot Block 3V Supply Flash Memory

STMICROELECTRONICS

意法半导体

64 Mbit 8Mb x8 or 4Mb x16, Boot Block 3V Supply Flash Memory

SUMMARY DESCRIPTION The M29W640D is a 64 Mbit (8Mb x8 or 4Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode. The memory is divided into blocks

STMICROELECTRONICS

意法半导体

64 Mbit 8Mb x8 or 4Mb x16, Boot Block 3V Supply Flash Memory

SUMMARY DESCRIPTION The M29W640D is a 64 Mbit (8Mb x8 or 4Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode. The memory is divided into blocks

STMICROELECTRONICS

意法半导体

64 Mbit 8Mb x8 or 4Mb x16, Boot Block 3V Supply Flash Memory

SUMMARY DESCRIPTION The M29W640D is a 64 Mbit (8Mb x8 or 4Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode. The memory is divided into blocks

STMICROELECTRONICS

意法半导体

64 Mbit 8Mb x8 or 4Mb x16, Boot Block 3V Supply Flash Memory

SUMMARY DESCRIPTION The M29W640D is a 64 Mbit (8Mb x8 or 4Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode. The memory is divided into blocks

STMICROELECTRONICS

意法半导体

64 Mbit 8Mb x8 or 4Mb x16, Boot Block 3V Supply Flash Memory

SUMMARY DESCRIPTION The M29W640D is a 64 Mbit (8Mb x8 or 4Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode. The memory is divided into blocks

STMICROELECTRONICS

意法半导体

64 Mbit 8Mb x8 or 4Mb x16, Boot Block 3V Supply Flash Memory

SUMMARY DESCRIPTION The M29W640D is a 64 Mbit (8Mb x8 or 4Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode. The memory is divided into blocks

STMICROELECTRONICS

意法半导体

64 Mbit 8Mb x8 or 4Mb x16, Boot Block 3V Supply Flash Memory

SUMMARY DESCRIPTION The M29W640D is a 64 Mbit (8Mb x8 or 4Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode. The memory is divided into blocks

STMICROELECTRONICS

意法半导体

64 Mbit 8Mb x8 or 4Mb x16, Boot Block 3V Supply Flash Memory

SUMMARY DESCRIPTION The M29W640D is a 64 Mbit (8Mb x8 or 4Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode. The memory is divided into blocks

STMICROELECTRONICS

意法半导体

64 Mbit 8Mb x8 or 4Mb x16, Boot Block 3V Supply Flash Memory

SUMMARY DESCRIPTION The M29W640D is a 64 Mbit (8Mb x8 or 4Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode. The memory is divided into blocks

STMICROELECTRONICS

意法半导体

64 Mbit 8Mb x8 or 4Mb x16, Boot Block 3V Supply Flash Memory

SUMMARY DESCRIPTION The M29W640D is a 64 Mbit (8Mb x8 or 4Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode. The memory is divided into blocks

STMICROELECTRONICS

意法半导体

64 Mbit 8Mb x8 or 4Mb x16, Boot Block 3V Supply Flash Memory

SUMMARY DESCRIPTION The M29W640D is a 64 Mbit (8Mb x8 or 4Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode. The memory is divided into blocks

STMICROELECTRONICS

意法半导体

64 Mbit 8Mb x8 or 4Mb x16, Boot Block 3V Supply Flash Memory

SUMMARY DESCRIPTION The M29W640D is a 64 Mbit (8Mb x8 or 4Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode. The memory is divided into blocks

STMICROELECTRONICS

意法半导体

64 Mbit 8Mb x8 or 4Mb x16, Boot Block 3V Supply Flash Memory

SUMMARY DESCRIPTION The M29W640D is a 64 Mbit (8Mb x8 or 4Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode. The memory is divided into blocks

STMICROELECTRONICS

意法半导体

64 Mbit 8Mb x8 or 4Mb x16, Boot Block 3V Supply Flash Memory

SUMMARY DESCRIPTION The M29W640D is a 64 Mbit (8Mb x8 or 4Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode. The memory is divided into blocks

STMICROELECTRONICS

意法半导体

64 Mbit 8Mb x8 or 4Mb x16, Boot Block 3V Supply Flash Memory

SUMMARY DESCRIPTION The M29W640D is a 64 Mbit (8Mb x8 or 4Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode. The memory is divided into blocks

STMICROELECTRONICS

意法半导体

64 Mbit 8Mb x8 or 4Mb x16, Boot Block 3V Supply Flash Memory

SUMMARY DESCRIPTION The M29W640D is a 64 Mbit (8Mb x8 or 4Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode. The memory is divided into blocks

STMICROELECTRONICS

意法半导体

64 Mbit 8Mb x8 or 4Mb x16, Boot Block 3V Supply Flash Memory

SUMMARY DESCRIPTION The M29W640D is a 64 Mbit (8Mb x8 or 4Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode. The memory is divided into blocks

STMICROELECTRONICS

意法半导体

64 Mbit 8Mb x8 or 4Mb x16, Boot Block 3V Supply Flash Memory

SUMMARY DESCRIPTION The M29W640D is a 64 Mbit (8Mb x8 or 4Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode. The memory is divided into blocks

STMICROELECTRONICS

意法半导体

64 Mbit 8Mb x8 or 4Mb x16, Boot Block 3V Supply Flash Memory

SUMMARY DESCRIPTION The M29W640D is a 64 Mbit (8Mb x8 or 4Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode. The memory is divided into blocks

STMICROELECTRONICS

意法半导体

64 Mbit 8Mb x8 or 4Mb x16, Boot Block 3V Supply Flash Memory

SUMMARY DESCRIPTION The M29W640D is a 64 Mbit (8Mb x8 or 4Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode. The memory is divided into blocks

STMICROELECTRONICS

意法半导体

64 Mbit 8Mb x8 or 4Mb x16, Boot Block 3V Supply Flash Memory

SUMMARY DESCRIPTION The M29W640D is a 64 Mbit (8Mb x8 or 4Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode. The memory is divided into blocks

STMICROELECTRONICS

意法半导体

64 Mbit 8Mb x8 or 4Mb x16, Boot Block 3V Supply Flash Memory

SUMMARY DESCRIPTION The M29W640D is a 64 Mbit (8Mb x8 or 4Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode. The memory is divided into blocks

STMICROELECTRONICS

意法半导体

64 Mbit 8Mb x8 or 4Mb x16, Boot Block 3V Supply Flash Memory

SUMMARY DESCRIPTION The M29W640D is a 64 Mbit (8Mb x8 or 4Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode. The memory is divided into blocks

STMICROELECTRONICS

意法半导体

64 Mbit 8Mb x8 or 4Mb x16, Boot Block 3V Supply Flash Memory

SUMMARY DESCRIPTION The M29W640D is a 64 Mbit (8Mb x8 or 4Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode. The memory is divided into blocks

STMICROELECTRONICS

意法半导体

FLASH NOR HIGH DENSITY & CONSUMER

Family Overview ➤ Densities from 32Mb to 64Mb ➤ 0.15µm process technology ➤ Wide application area covered ➤ technology shrink on going ➤ higher densities ➤ improved performances ➤ Increased reliability Main Features ➤ 32Mb (4Mbx8 / 2Mbx16), Boot Block ➤ Access Time

STMICROELECTRONICS

意法半导体

64 Mbit 8Mb x8 or 4Mb x16, Boot Block 3V Supply Flash Memory

SUMMARY DESCRIPTION The M29W640D is a 64 Mbit (8Mb x8 or 4Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode. The memory is divided into blocks

STMICROELECTRONICS

意法半导体

64 Mbit (8Mb x8 or 4Mb x16, Page, Boot Block) 3V Supply Flash Memory

Summary description The M29W640F is a 64 Mbit (8Mb x8 or 4Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode. The memory is divided into blocks

STMICROELECTRONICS

意法半导体

64 Mbit (8Mb x8 or 4Mb x16, Page, Boot Block) 3V Supply Flash Memory

Summary description The M29W640F is a 64 Mbit (8Mb x8 or 4Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode. The memory is divided into blocks

STMICROELECTRONICS

意法半导体

M29W640DB产品属性

  • 类型

    描述

  • 型号

    M29W640DB

  • 功能描述

    闪存 8Mx8 or 4Mx16 90ns

  • RoHS

  • 制造商

    ON Semiconductor

  • 数据总线宽度

    1 bit

  • 存储类型

    Flash

  • 存储容量

    2 MB

  • 结构

    256 K x 8

  • 接口类型

    SPI

  • 电源电压-最大

    3.6 V

  • 电源电压-最小

    2.3 V

  • 最大工作电流

    15 mA

  • 工作温度

    - 40 C to + 85 C

  • 安装风格

    SMD/SMT

  • 封装

    Reel

更新时间:2026-5-24 8:26:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ST/意法
21+
TSOP48
1709
ST
25+
TSOP
34
百分百原装正品 真实公司现货库存 本公司只做原装 可
ST/意法
24+
TSOP48
54000
郑重承诺只做原装进口现货
ST
04+
TSOP48
2266
全新原装进口自己库存优势
ST
23+
TSOP48
20000
全新原装假一赔十
ST
24+
TSOP
20000
全新原厂原装,进口正品现货,正规渠道可含税!!
DALLAS
1038+
DIP
34
一级代理,专注军工、汽车、医疗、工业、新能源、电力
ST
2015+
DIP/SOP
19889
一级代理原装现货,特价热卖!
ST/意法
24+
65200
ST/意法
25+
TSOP48
880000
明嘉莱只做原装正品现货

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