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型号	功能描述	生产厂家企业	LOGO
M29DW128F	128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory Features summary ■ Supply Voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VCCQ= 1.65V to 3.6V for Input/Output – VPP =12V for Fast Program (optional) ■ ASYNCHRONOUS RANDOM/PAGE READ – Page Width: 8 Words – Page Access: 25, 30ns – Random Access: 60, 70ns ■ PROGRAMMING TIME – 1	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M29DW128F	128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory 文件：1.78901 Mbytes Page：94 Pages	NUMONYX	NUMONYX
M29DW128F	128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory 文件：756.04 Kbytes Page：94 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M29DW128F	128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M29DW128F60NF1	128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory Features summary ■ Supply Voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VCCQ= 1.65V to 3.6V for Input/Output – VPP =12V for Fast Program (optional) ■ ASYNCHRONOUS RANDOM/PAGE READ – Page Width: 8 Words – Page Access: 25, 30ns – Random Access: 60, 70ns ■ PROGRAMMING TIME – 1	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M29DW128F60NF1E	128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory Features summary ■ Supply Voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VCCQ= 1.65V to 3.6V for Input/Output – VPP =12V for Fast Program (optional) ■ ASYNCHRONOUS RANDOM/PAGE READ – Page Width: 8 Words – Page Access: 25, 30ns – Random Access: 60, 70ns ■ PROGRAMMING TIME – 1	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M29DW128F60NF1F	128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory Features summary ■ Supply Voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VCCQ= 1.65V to 3.6V for Input/Output – VPP =12V for Fast Program (optional) ■ ASYNCHRONOUS RANDOM/PAGE READ – Page Width: 8 Words – Page Access: 25, 30ns – Random Access: 60, 70ns ■ PROGRAMMING TIME – 1	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M29DW128F60NF1T	128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory Features summary ■ Supply Voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VCCQ= 1.65V to 3.6V for Input/Output – VPP =12V for Fast Program (optional) ■ ASYNCHRONOUS RANDOM/PAGE READ – Page Width: 8 Words – Page Access: 25, 30ns – Random Access: 60, 70ns ■ PROGRAMMING TIME – 1	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M29DW128F60NF6	128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory Features summary ■ Supply Voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VCCQ= 1.65V to 3.6V for Input/Output – VPP =12V for Fast Program (optional) ■ ASYNCHRONOUS RANDOM/PAGE READ – Page Width: 8 Words – Page Access: 25, 30ns – Random Access: 60, 70ns ■ PROGRAMMING TIME – 1	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M29DW128F60NF6E	128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory Features summary ■ Supply Voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VCCQ= 1.65V to 3.6V for Input/Output – VPP =12V for Fast Program (optional) ■ ASYNCHRONOUS RANDOM/PAGE READ – Page Width: 8 Words – Page Access: 25, 30ns – Random Access: 60, 70ns ■ PROGRAMMING TIME – 1	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M29DW128F60NF6F	128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory Features summary ■ Supply Voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VCCQ= 1.65V to 3.6V for Input/Output – VPP =12V for Fast Program (optional) ■ ASYNCHRONOUS RANDOM/PAGE READ – Page Width: 8 Words – Page Access: 25, 30ns – Random Access: 60, 70ns ■ PROGRAMMING TIME – 1	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M29DW128F60NF6T	128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory Features summary ■ Supply Voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VCCQ= 1.65V to 3.6V for Input/Output – VPP =12V for Fast Program (optional) ■ ASYNCHRONOUS RANDOM/PAGE READ – Page Width: 8 Words – Page Access: 25, 30ns – Random Access: 60, 70ns ■ PROGRAMMING TIME – 1	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M29DW128F60ZA1	128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory Features summary ■ Supply Voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VCCQ= 1.65V to 3.6V for Input/Output – VPP =12V for Fast Program (optional) ■ ASYNCHRONOUS RANDOM/PAGE READ – Page Width: 8 Words – Page Access: 25, 30ns – Random Access: 60, 70ns ■ PROGRAMMING TIME – 1	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M29DW128F60ZA1E	128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory Features summary ■ Supply Voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VCCQ= 1.65V to 3.6V for Input/Output – VPP =12V for Fast Program (optional) ■ ASYNCHRONOUS RANDOM/PAGE READ – Page Width: 8 Words – Page Access: 25, 30ns – Random Access: 60, 70ns ■ PROGRAMMING TIME – 1	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M29DW128F60ZA1F	128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory Features summary ■ Supply Voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VCCQ= 1.65V to 3.6V for Input/Output – VPP =12V for Fast Program (optional) ■ ASYNCHRONOUS RANDOM/PAGE READ – Page Width: 8 Words – Page Access: 25, 30ns – Random Access: 60, 70ns ■ PROGRAMMING TIME – 1	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M29DW128F60ZA1T	128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory Features summary ■ Supply Voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VCCQ= 1.65V to 3.6V for Input/Output – VPP =12V for Fast Program (optional) ■ ASYNCHRONOUS RANDOM/PAGE READ – Page Width: 8 Words – Page Access: 25, 30ns – Random Access: 60, 70ns ■ PROGRAMMING TIME – 1	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M29DW128F60ZA6	128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory Features summary ■ Supply Voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VCCQ= 1.65V to 3.6V for Input/Output – VPP =12V for Fast Program (optional) ■ ASYNCHRONOUS RANDOM/PAGE READ – Page Width: 8 Words – Page Access: 25, 30ns – Random Access: 60, 70ns ■ PROGRAMMING TIME – 1	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M29DW128F60ZA6E	128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory Features summary ■ Supply Voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VCCQ= 1.65V to 3.6V for Input/Output – VPP =12V for Fast Program (optional) ■ ASYNCHRONOUS RANDOM/PAGE READ – Page Width: 8 Words – Page Access: 25, 30ns – Random Access: 60, 70ns ■ PROGRAMMING TIME – 1	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M29DW128F60ZA6F	128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory Features summary ■ Supply Voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VCCQ= 1.65V to 3.6V for Input/Output – VPP =12V for Fast Program (optional) ■ ASYNCHRONOUS RANDOM/PAGE READ – Page Width: 8 Words – Page Access: 25, 30ns – Random Access: 60, 70ns ■ PROGRAMMING TIME – 1	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M29DW128F60ZA6T	128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory Features summary ■ Supply Voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VCCQ= 1.65V to 3.6V for Input/Output – VPP =12V for Fast Program (optional) ■ ASYNCHRONOUS RANDOM/PAGE READ – Page Width: 8 Words – Page Access: 25, 30ns – Random Access: 60, 70ns ■ PROGRAMMING TIME – 1	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M29DW128F70NF1	128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory Features summary ■ Supply Voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VCCQ= 1.65V to 3.6V for Input/Output – VPP =12V for Fast Program (optional) ■ ASYNCHRONOUS RANDOM/PAGE READ – Page Width: 8 Words – Page Access: 25, 30ns – Random Access: 60, 70ns ■ PROGRAMMING TIME – 1	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M29DW128F70NF1E	128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory Features summary ■ Supply Voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VCCQ= 1.65V to 3.6V for Input/Output – VPP =12V for Fast Program (optional) ■ ASYNCHRONOUS RANDOM/PAGE READ – Page Width: 8 Words – Page Access: 25, 30ns – Random Access: 60, 70ns ■ PROGRAMMING TIME – 1	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M29DW128F70NF1F	128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory Features summary ■ Supply Voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VCCQ= 1.65V to 3.6V for Input/Output – VPP =12V for Fast Program (optional) ■ ASYNCHRONOUS RANDOM/PAGE READ – Page Width: 8 Words – Page Access: 25, 30ns – Random Access: 60, 70ns ■ PROGRAMMING TIME – 1	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M29DW128F70NF1T	128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory Features summary ■ Supply Voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VCCQ= 1.65V to 3.6V for Input/Output – VPP =12V for Fast Program (optional) ■ ASYNCHRONOUS RANDOM/PAGE READ – Page Width: 8 Words – Page Access: 25, 30ns – Random Access: 60, 70ns ■ PROGRAMMING TIME – 1	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M29DW128F70NF6	128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory Features summary ■ Supply Voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VCCQ= 1.65V to 3.6V for Input/Output – VPP =12V for Fast Program (optional) ■ ASYNCHRONOUS RANDOM/PAGE READ – Page Width: 8 Words – Page Access: 25, 30ns – Random Access: 60, 70ns ■ PROGRAMMING TIME – 1	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M29DW128F70NF6E	128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory Features summary ■ Supply Voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VCCQ= 1.65V to 3.6V for Input/Output – VPP =12V for Fast Program (optional) ■ ASYNCHRONOUS RANDOM/PAGE READ – Page Width: 8 Words – Page Access: 25, 30ns – Random Access: 60, 70ns ■ PROGRAMMING TIME – 1	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M29DW128F70NF6F	128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory Features summary ■ Supply Voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VCCQ= 1.65V to 3.6V for Input/Output – VPP =12V for Fast Program (optional) ■ ASYNCHRONOUS RANDOM/PAGE READ – Page Width: 8 Words – Page Access: 25, 30ns – Random Access: 60, 70ns ■ PROGRAMMING TIME – 1	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M29DW128F70NF6T	128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory Features summary ■ Supply Voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VCCQ= 1.65V to 3.6V for Input/Output – VPP =12V for Fast Program (optional) ■ ASYNCHRONOUS RANDOM/PAGE READ – Page Width: 8 Words – Page Access: 25, 30ns – Random Access: 60, 70ns ■ PROGRAMMING TIME – 1	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M29DW128F70ZA1	128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory Features summary ■ Supply Voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VCCQ= 1.65V to 3.6V for Input/Output – VPP =12V for Fast Program (optional) ■ ASYNCHRONOUS RANDOM/PAGE READ – Page Width: 8 Words – Page Access: 25, 30ns – Random Access: 60, 70ns ■ PROGRAMMING TIME – 1	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M29DW128F70ZA1E	128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory Features summary ■ Supply Voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VCCQ= 1.65V to 3.6V for Input/Output – VPP =12V for Fast Program (optional) ■ ASYNCHRONOUS RANDOM/PAGE READ – Page Width: 8 Words – Page Access: 25, 30ns – Random Access: 60, 70ns ■ PROGRAMMING TIME – 1	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M29DW128F70ZA1F	128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory Features summary ■ Supply Voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VCCQ= 1.65V to 3.6V for Input/Output – VPP =12V for Fast Program (optional) ■ ASYNCHRONOUS RANDOM/PAGE READ – Page Width: 8 Words – Page Access: 25, 30ns – Random Access: 60, 70ns ■ PROGRAMMING TIME – 1	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M29DW128F70ZA1T	128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory Features summary ■ Supply Voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VCCQ= 1.65V to 3.6V for Input/Output – VPP =12V for Fast Program (optional) ■ ASYNCHRONOUS RANDOM/PAGE READ – Page Width: 8 Words – Page Access: 25, 30ns – Random Access: 60, 70ns ■ PROGRAMMING TIME – 1	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M29DW128F70ZA6	128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory Features summary ■ Supply Voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VCCQ= 1.65V to 3.6V for Input/Output – VPP =12V for Fast Program (optional) ■ ASYNCHRONOUS RANDOM/PAGE READ – Page Width: 8 Words – Page Access: 25, 30ns – Random Access: 60, 70ns ■ PROGRAMMING TIME – 1	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M29DW128F70ZA6E	128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory Features summary ■ Supply Voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VCCQ= 1.65V to 3.6V for Input/Output – VPP =12V for Fast Program (optional) ■ ASYNCHRONOUS RANDOM/PAGE READ – Page Width: 8 Words – Page Access: 25, 30ns – Random Access: 60, 70ns ■ PROGRAMMING TIME – 1	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M29DW128F70ZA6F	128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory Features summary ■ Supply Voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VCCQ= 1.65V to 3.6V for Input/Output – VPP =12V for Fast Program (optional) ■ ASYNCHRONOUS RANDOM/PAGE READ – Page Width: 8 Words – Page Access: 25, 30ns – Random Access: 60, 70ns ■ PROGRAMMING TIME – 1	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M29DW128F70ZA6T	128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory Features summary ■ Supply Voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VCCQ= 1.65V to 3.6V for Input/Output – VPP =12V for Fast Program (optional) ■ ASYNCHRONOUS RANDOM/PAGE READ – Page Width: 8 Words – Page Access: 25, 30ns – Random Access: 60, 70ns ■ PROGRAMMING TIME – 1	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M29DW128F_06	128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory 文件：756.04 Kbytes Page：94 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M29DW128F60NF1	128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory 文件：756.04 Kbytes Page：94 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M29DW128F60NF1	128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory 文件：1.78901 Mbytes Page：94 Pages	NUMONYX	NUMONYX
M29DW128F60NF1E	128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory 文件：1.78901 Mbytes Page：94 Pages	NUMONYX	NUMONYX
M29DW128F60NF1E	128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory 文件：756.04 Kbytes Page：94 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M29DW128F60NF1F	128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory 文件：756.04 Kbytes Page：94 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M29DW128F60NF1F	128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory 文件：1.78901 Mbytes Page：94 Pages	NUMONYX	NUMONYX
M29DW128F60NF1T	128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory 文件：1.78901 Mbytes Page：94 Pages	NUMONYX	NUMONYX
M29DW128F60NF1T	128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory 文件：756.04 Kbytes Page：94 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M29DW128F60NF6	128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory 文件：1.78901 Mbytes Page：94 Pages	NUMONYX	NUMONYX
M29DW128F60NF6	128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory 文件：756.04 Kbytes Page：94 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M29DW128F60NF6E	128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory 文件：1.78901 Mbytes Page：94 Pages	NUMONYX	NUMONYX
M29DW128F60NF6E	128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory 文件：756.04 Kbytes Page：94 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M29DW128F60NF6F	128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory 文件：756.04 Kbytes Page：94 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M29DW128F60NF6F	128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory 文件：1.78901 Mbytes Page：94 Pages	NUMONYX	NUMONYX
M29DW128F60NF6T	128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory 文件：1.78901 Mbytes Page：94 Pages	NUMONYX	NUMONYX
M29DW128F60NF6T	128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory 文件：756.04 Kbytes Page：94 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M29DW128F60ZA1	128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory 文件：1.78901 Mbytes Page：94 Pages	NUMONYX	NUMONYX
M29DW128F60ZA1	128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory 文件：756.04 Kbytes Page：94 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M29DW128F60ZA1E	128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory 文件：756.04 Kbytes Page：94 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M29DW128F60ZA1E	128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory 文件：1.78901 Mbytes Page：94 Pages	NUMONYX	NUMONYX
M29DW128F60ZA1F	128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory 文件：1.78901 Mbytes Page：94 Pages	NUMONYX	NUMONYX
M29DW128F60ZA1F	128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory 文件：756.04 Kbytes Page：94 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M29DW128F60ZA1T	128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory 文件：756.04 Kbytes Page：94 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS

M29DW128F产品属性

类型
描述
型号
M29DW128F
制造商
NUMONYX
制造商全称
Numonyx B.V
功能描述
128 Mbit(16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory

M29DW128F供应商更多...

更新时间：2026-5-18 23:00:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市高捷芯城科技有限公司	M29DW128F70ZA6F	micron(镁光)	25+	8-VDFPN (6x5) (MLP8)	6843	样件支持,可原厂排单订货!	询价
深圳市得捷芯城科技有限公司	M29DW128F70ZA6F	micron(镁光)	25+	8-VDFPN (6x5) (MLP8)	6895	正规渠道,免费送样。支持账期,BOM一站式配齐	询价
上海意淼电子科技有限公司	M29DW128F-70NF6E	ST	23+	NA	20000	全新原装假一赔十	询价
深圳市芯亿发电子科技有限公司	M29DW128F70ZA6F	ST/意法	26+	FBGA	20000	公司只有正品,实单来谈	询价
中天科工半导体（深圳）有限公司	M29DW128F60ZA6E	MICRON/美光	25+	N/A	12496	MICRON/美光原装正品M29DW128F60ZA6E即刻询购立享优惠#长期有货	询价
深圳市创新迹电子有限公司	M29DW128F70ZA6F	ST	22+	BGA64	20000	公司只做原装品质保障	询价
深圳市冠亿通科技有限公司	M29DW128F60ZA6E	Micron Technology Inc.			18500	全新原厂原装现货!受权代理!可送样可提供技术支持!	询价
深圳市赛美科科技有限公司	M29DW128F70ZA6	STM		BGA64	53650	一级代理原装正品假一罚十价格优势长期供货	询价
深圳市腾亿芯科技有限公司	M29DW128F70ZA6E	ST	25+	FBGA	20000	原装，请咨询	询价
深圳市中飞凌科技有限公司	M29DW128F70ZA6E	ST	26+	FBGA	60000	只有原装可配单	询价

M29DW128F芯片相关品牌

M29DW128F规格书下载地址

M29DW128F参数引脚图相关

M29DW128F数据表相关新闻

M28W160ECB70ZB6 ST/Micron
www.hfxcom.com.
2021-11-11
M28C64-A256，M28C64C-15M6，M28C64C-20M1，M28C64X-15M1，M28F101-100K1，M28LV16-25M6，M28LV17-25M6，M28LV64C-20M6，M29F102B-70K1，M34116B1，M74HC00，M74ACT74，M74ACT257，M74HC163，M74HC04，M74HC123
M28C64-A256，M28C64C-15M6，M28C64C-20M1，M28C64X-15M1，M28F101-100K1，M28LV16-25M6，M28LV17-25M6，M28LV64C-20M6，M29F102B-70K1，M34116B1，M74HC00，M74ACT74，M74ACT257，M74HC163，M74HC04，M74HC123
2019-12-29
M29W128GL70ZS6E顺德利科技正品原装进口稳定的货源优势的价格
深圳市顺德利科技有限公司 0755-82725660 18128853661（微信75056055） QQ：782954141
2019-6-18
M28W320FCT70N6E顺德利科技正品原装进口稳定的货源优势的价格
深圳市顺德利科技有限公司 0755-82725660 18128853661（微信75056055） QQ：782954141
2019-6-18
M29W128GH70N6E顺德利科技正品原装进口稳定的货源优势的价格
深圳市顺德利科技有限公司 0755-82725660 18128853661（微信75056055） QQ：782954141
2019-6-18
M29W128GL70N6E顺德利科技正品原装进口稳定的货源优势的价格
深圳市顺德利科技有限公司 0755-82725660 18128853661（微信75056055） QQ：782954141
2019-6-18

DdatasheetPDF页码索引

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找IC，尽在114IC

M29DW128F产品属性

M29DW128F供应商更多...

M29DW128F芯片相关品牌

M29DW128F规格书下载地址

M29DW128F参数引脚图相关

M29DW128F数据表相关新闻

M28W160ECB70ZB6 ST/Micron

M28C64-A256，M28C64C-15M6，M28C64C-20M1，M28C64X-15M1，M28F101-100K1，M28LV16-25M6，M28LV17-25M6，M28LV64C-20M6，M29F102B-70K1，M34116B1，M74HC00，M74ACT74，M74ACT257，M74HC163，M74HC04，M74HC123

M29W128GL70ZS6E顺德利科技正品原装进口稳定的货源优势的价格

M28W320FCT70N6E顺德利科技正品原装进口稳定的货源优势的价格

M29W128GH70N6E顺德利科技正品原装进口稳定的货源优势的价格

M29W128GL70N6E顺德利科技正品原装进口稳定的货源优势的价格

DdatasheetPDF页码索引