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型号	功能描述	生产厂家企业	LOGO
M29DW128F	128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory Features summary ■ Supply Voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VCCQ= 1.65V to 3.6V for Input/Output – VPP =12V for Fast Program (optional) ■ ASYNCHRONOUS RANDOM/PAGE READ – Page Width: 8 Words – Page Access: 25, 30ns – Random Access: 60, 70ns ■ PROGRAMMING TIME – 1	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M29DW128F	128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory 文件：756.04 Kbytes Page：94 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M29DW128F	128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M29DW128F	128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory 文件：1.78901 Mbytes Page：94 Pages	NUMONYX	NUMONYX
M29DW128F60NF1	128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory Features summary ■ Supply Voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VCCQ= 1.65V to 3.6V for Input/Output – VPP =12V for Fast Program (optional) ■ ASYNCHRONOUS RANDOM/PAGE READ – Page Width: 8 Words – Page Access: 25, 30ns – Random Access: 60, 70ns ■ PROGRAMMING TIME – 1	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M29DW128F60NF1E	128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory Features summary ■ Supply Voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VCCQ= 1.65V to 3.6V for Input/Output – VPP =12V for Fast Program (optional) ■ ASYNCHRONOUS RANDOM/PAGE READ – Page Width: 8 Words – Page Access: 25, 30ns – Random Access: 60, 70ns ■ PROGRAMMING TIME – 1	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M29DW128F60NF1F	128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory Features summary ■ Supply Voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VCCQ= 1.65V to 3.6V for Input/Output – VPP =12V for Fast Program (optional) ■ ASYNCHRONOUS RANDOM/PAGE READ – Page Width: 8 Words – Page Access: 25, 30ns – Random Access: 60, 70ns ■ PROGRAMMING TIME – 1	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M29DW128F60NF1T	128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory Features summary ■ Supply Voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VCCQ= 1.65V to 3.6V for Input/Output – VPP =12V for Fast Program (optional) ■ ASYNCHRONOUS RANDOM/PAGE READ – Page Width: 8 Words – Page Access: 25, 30ns – Random Access: 60, 70ns ■ PROGRAMMING TIME – 1	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M29DW128F60NF6	128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory Features summary ■ Supply Voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VCCQ= 1.65V to 3.6V for Input/Output – VPP =12V for Fast Program (optional) ■ ASYNCHRONOUS RANDOM/PAGE READ – Page Width: 8 Words – Page Access: 25, 30ns – Random Access: 60, 70ns ■ PROGRAMMING TIME – 1	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M29DW128F60NF6E	128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory Features summary ■ Supply Voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VCCQ= 1.65V to 3.6V for Input/Output – VPP =12V for Fast Program (optional) ■ ASYNCHRONOUS RANDOM/PAGE READ – Page Width: 8 Words – Page Access: 25, 30ns – Random Access: 60, 70ns ■ PROGRAMMING TIME – 1	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M29DW128F60NF6F	128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory Features summary ■ Supply Voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VCCQ= 1.65V to 3.6V for Input/Output – VPP =12V for Fast Program (optional) ■ ASYNCHRONOUS RANDOM/PAGE READ – Page Width: 8 Words – Page Access: 25, 30ns – Random Access: 60, 70ns ■ PROGRAMMING TIME – 1	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M29DW128F60NF6T	128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory Features summary ■ Supply Voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VCCQ= 1.65V to 3.6V for Input/Output – VPP =12V for Fast Program (optional) ■ ASYNCHRONOUS RANDOM/PAGE READ – Page Width: 8 Words – Page Access: 25, 30ns – Random Access: 60, 70ns ■ PROGRAMMING TIME – 1	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M29DW128F60ZA1	128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory Features summary ■ Supply Voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VCCQ= 1.65V to 3.6V for Input/Output – VPP =12V for Fast Program (optional) ■ ASYNCHRONOUS RANDOM/PAGE READ – Page Width: 8 Words – Page Access: 25, 30ns – Random Access: 60, 70ns ■ PROGRAMMING TIME – 1	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M29DW128F60ZA1E	128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory Features summary ■ Supply Voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VCCQ= 1.65V to 3.6V for Input/Output – VPP =12V for Fast Program (optional) ■ ASYNCHRONOUS RANDOM/PAGE READ – Page Width: 8 Words – Page Access: 25, 30ns – Random Access: 60, 70ns ■ PROGRAMMING TIME – 1	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M29DW128F60ZA1F	128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory Features summary ■ Supply Voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VCCQ= 1.65V to 3.6V for Input/Output – VPP =12V for Fast Program (optional) ■ ASYNCHRONOUS RANDOM/PAGE READ – Page Width: 8 Words – Page Access: 25, 30ns – Random Access: 60, 70ns ■ PROGRAMMING TIME – 1	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M29DW128F60ZA1T	128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory Features summary ■ Supply Voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VCCQ= 1.65V to 3.6V for Input/Output – VPP =12V for Fast Program (optional) ■ ASYNCHRONOUS RANDOM/PAGE READ – Page Width: 8 Words – Page Access: 25, 30ns – Random Access: 60, 70ns ■ PROGRAMMING TIME – 1	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M29DW128F60ZA6	128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory Features summary ■ Supply Voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VCCQ= 1.65V to 3.6V for Input/Output – VPP =12V for Fast Program (optional) ■ ASYNCHRONOUS RANDOM/PAGE READ – Page Width: 8 Words – Page Access: 25, 30ns – Random Access: 60, 70ns ■ PROGRAMMING TIME – 1	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M29DW128F60ZA6E	128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory Features summary ■ Supply Voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VCCQ= 1.65V to 3.6V for Input/Output – VPP =12V for Fast Program (optional) ■ ASYNCHRONOUS RANDOM/PAGE READ – Page Width: 8 Words – Page Access: 25, 30ns – Random Access: 60, 70ns ■ PROGRAMMING TIME – 1	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M29DW128F60ZA6F	128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory Features summary ■ Supply Voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VCCQ= 1.65V to 3.6V for Input/Output – VPP =12V for Fast Program (optional) ■ ASYNCHRONOUS RANDOM/PAGE READ – Page Width: 8 Words – Page Access: 25, 30ns – Random Access: 60, 70ns ■ PROGRAMMING TIME – 1	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M29DW128F60ZA6T	128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory Features summary ■ Supply Voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VCCQ= 1.65V to 3.6V for Input/Output – VPP =12V for Fast Program (optional) ■ ASYNCHRONOUS RANDOM/PAGE READ – Page Width: 8 Words – Page Access: 25, 30ns – Random Access: 60, 70ns ■ PROGRAMMING TIME – 1	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M29DW128F70NF1	128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory Features summary ■ Supply Voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VCCQ= 1.65V to 3.6V for Input/Output – VPP =12V for Fast Program (optional) ■ ASYNCHRONOUS RANDOM/PAGE READ – Page Width: 8 Words – Page Access: 25, 30ns – Random Access: 60, 70ns ■ PROGRAMMING TIME – 1	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M29DW128F70NF1E	128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory Features summary ■ Supply Voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VCCQ= 1.65V to 3.6V for Input/Output – VPP =12V for Fast Program (optional) ■ ASYNCHRONOUS RANDOM/PAGE READ – Page Width: 8 Words – Page Access: 25, 30ns – Random Access: 60, 70ns ■ PROGRAMMING TIME – 1	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M29DW128F70NF1F	128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory Features summary ■ Supply Voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VCCQ= 1.65V to 3.6V for Input/Output – VPP =12V for Fast Program (optional) ■ ASYNCHRONOUS RANDOM/PAGE READ – Page Width: 8 Words – Page Access: 25, 30ns – Random Access: 60, 70ns ■ PROGRAMMING TIME – 1	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M29DW128F70NF1T	128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory Features summary ■ Supply Voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VCCQ= 1.65V to 3.6V for Input/Output – VPP =12V for Fast Program (optional) ■ ASYNCHRONOUS RANDOM/PAGE READ – Page Width: 8 Words – Page Access: 25, 30ns – Random Access: 60, 70ns ■ PROGRAMMING TIME – 1	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M29DW128F70NF6	128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory Features summary ■ Supply Voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VCCQ= 1.65V to 3.6V for Input/Output – VPP =12V for Fast Program (optional) ■ ASYNCHRONOUS RANDOM/PAGE READ – Page Width: 8 Words – Page Access: 25, 30ns – Random Access: 60, 70ns ■ PROGRAMMING TIME – 1	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M29DW128F70NF6E	128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory Features summary ■ Supply Voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VCCQ= 1.65V to 3.6V for Input/Output – VPP =12V for Fast Program (optional) ■ ASYNCHRONOUS RANDOM/PAGE READ – Page Width: 8 Words – Page Access: 25, 30ns – Random Access: 60, 70ns ■ PROGRAMMING TIME – 1	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M29DW128F70NF6F	128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory Features summary ■ Supply Voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VCCQ= 1.65V to 3.6V for Input/Output – VPP =12V for Fast Program (optional) ■ ASYNCHRONOUS RANDOM/PAGE READ – Page Width: 8 Words – Page Access: 25, 30ns – Random Access: 60, 70ns ■ PROGRAMMING TIME – 1	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M29DW128F70NF6T	128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory Features summary ■ Supply Voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VCCQ= 1.65V to 3.6V for Input/Output – VPP =12V for Fast Program (optional) ■ ASYNCHRONOUS RANDOM/PAGE READ – Page Width: 8 Words – Page Access: 25, 30ns – Random Access: 60, 70ns ■ PROGRAMMING TIME – 1	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M29DW128F70ZA1	128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory Features summary ■ Supply Voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VCCQ= 1.65V to 3.6V for Input/Output – VPP =12V for Fast Program (optional) ■ ASYNCHRONOUS RANDOM/PAGE READ – Page Width: 8 Words – Page Access: 25, 30ns – Random Access: 60, 70ns ■ PROGRAMMING TIME – 1	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M29DW128F70ZA1E	128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory Features summary ■ Supply Voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VCCQ= 1.65V to 3.6V for Input/Output – VPP =12V for Fast Program (optional) ■ ASYNCHRONOUS RANDOM/PAGE READ – Page Width: 8 Words – Page Access: 25, 30ns – Random Access: 60, 70ns ■ PROGRAMMING TIME – 1	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M29DW128F70ZA1F	128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory Features summary ■ Supply Voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VCCQ= 1.65V to 3.6V for Input/Output – VPP =12V for Fast Program (optional) ■ ASYNCHRONOUS RANDOM/PAGE READ – Page Width: 8 Words – Page Access: 25, 30ns – Random Access: 60, 70ns ■ PROGRAMMING TIME – 1	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M29DW128F70ZA1T	128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory Features summary ■ Supply Voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VCCQ= 1.65V to 3.6V for Input/Output – VPP =12V for Fast Program (optional) ■ ASYNCHRONOUS RANDOM/PAGE READ – Page Width: 8 Words – Page Access: 25, 30ns – Random Access: 60, 70ns ■ PROGRAMMING TIME – 1	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M29DW128F70ZA6	128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory Features summary ■ Supply Voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VCCQ= 1.65V to 3.6V for Input/Output – VPP =12V for Fast Program (optional) ■ ASYNCHRONOUS RANDOM/PAGE READ – Page Width: 8 Words – Page Access: 25, 30ns – Random Access: 60, 70ns ■ PROGRAMMING TIME – 1	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M29DW128F70ZA6E	128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory Features summary ■ Supply Voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VCCQ= 1.65V to 3.6V for Input/Output – VPP =12V for Fast Program (optional) ■ ASYNCHRONOUS RANDOM/PAGE READ – Page Width: 8 Words – Page Access: 25, 30ns – Random Access: 60, 70ns ■ PROGRAMMING TIME – 1	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M29DW128F70ZA6F	128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory Features summary ■ Supply Voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VCCQ= 1.65V to 3.6V for Input/Output – VPP =12V for Fast Program (optional) ■ ASYNCHRONOUS RANDOM/PAGE READ – Page Width: 8 Words – Page Access: 25, 30ns – Random Access: 60, 70ns ■ PROGRAMMING TIME – 1	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M29DW128F70ZA6T	128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory Features summary ■ Supply Voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VCCQ= 1.65V to 3.6V for Input/Output – VPP =12V for Fast Program (optional) ■ ASYNCHRONOUS RANDOM/PAGE READ – Page Width: 8 Words – Page Access: 25, 30ns – Random Access: 60, 70ns ■ PROGRAMMING TIME – 1	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M29DW128F_06	128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory 文件：756.04 Kbytes Page：94 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M29DW128F60NF1	128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory 文件：756.04 Kbytes Page：94 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M29DW128F60NF1	128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory 文件：1.78901 Mbytes Page：94 Pages	NUMONYX	NUMONYX
M29DW128F60NF1E	128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory 文件：1.78901 Mbytes Page：94 Pages	NUMONYX	NUMONYX
M29DW128F60NF1E	128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory 文件：756.04 Kbytes Page：94 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M29DW128F60NF1F	128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory 文件：756.04 Kbytes Page：94 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M29DW128F60NF1F	128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory 文件：1.78901 Mbytes Page：94 Pages	NUMONYX	NUMONYX
M29DW128F60NF1T	128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory 文件：756.04 Kbytes Page：94 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M29DW128F60NF1T	128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory 文件：1.78901 Mbytes Page：94 Pages	NUMONYX	NUMONYX
M29DW128F60NF6	128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory 文件：1.78901 Mbytes Page：94 Pages	NUMONYX	NUMONYX
M29DW128F60NF6	128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory 文件：756.04 Kbytes Page：94 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M29DW128F60NF6E	128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory 文件：1.78901 Mbytes Page：94 Pages	NUMONYX	NUMONYX
M29DW128F60NF6E	128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory 文件：756.04 Kbytes Page：94 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M29DW128F60NF6F	128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory 文件：1.78901 Mbytes Page：94 Pages	NUMONYX	NUMONYX
M29DW128F60NF6F	128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory 文件：756.04 Kbytes Page：94 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M29DW128F60NF6T	128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory 文件：756.04 Kbytes Page：94 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M29DW128F60NF6T	128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory 文件：1.78901 Mbytes Page：94 Pages	NUMONYX	NUMONYX
M29DW128F60ZA1	128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory 文件：756.04 Kbytes Page：94 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M29DW128F60ZA1	128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory 文件：1.78901 Mbytes Page：94 Pages	NUMONYX	NUMONYX
M29DW128F60ZA1E	128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory 文件：756.04 Kbytes Page：94 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M29DW128F60ZA1E	128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory 文件：1.78901 Mbytes Page：94 Pages	NUMONYX	NUMONYX
M29DW128F60ZA1F	128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory 文件：1.78901 Mbytes Page：94 Pages	NUMONYX	NUMONYX
M29DW128F60ZA1F	128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory 文件：756.04 Kbytes Page：94 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M29DW128F60ZA1T	128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory 文件：1.78901 Mbytes Page：94 Pages	NUMONYX	NUMONYX

M29DW128F产品属性

类型
描述
型号
M29DW128F
制造商
NUMONYX
制造商全称
Numonyx B.V
功能描述
128 Mbit(16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory

M29DW128F供应商更多...

更新时间：2025-11-23 20:00:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市得捷芯城科技有限公司	M29DW128F-70NF6	ST/PBF	24+	NA/	446	优势代理渠道,原装正品,可全系列订货开增值税票	询价
深圳市科芯源微电子有限公司	M29DW128F70ZA6F	ST/意法	25+	FBGA	996880	只做原装,欢迎来电资询	询价
深圳市明嘉莱科技有限公司	M29DW128F-70NF6	ST/PBF	24+	TSSOP	880000	明嘉莱只做原装正品现货	询价
深圳市胜彬电子有限公司	M29DW128F-70N6	ST	22+	TSSOP	3000	原装正品,支持实单	询价
齐创科技(上海,北京,青岛)有限公司	M29DW128F-70NF6	ST/PBF	23+	TSSOP	5000	原装正品,假一罚十	询价
深圳诚思涵科技有限公司	M29DW128F60ZA6	ST	16+	BGA	2500	进口原装现货/价格优势!	询价
艾睿（深圳）半导体有限公司	M29DW128F70ZA6F	ST	2447	BGA64	100500	一级代理专营品牌!原装正品,优势现货,长期排单到货	询价
中天科工半导体（深圳）有限公司	M29DW128F60ZA6E	MICRON/美光	25+	N/A	12496	MICRON/美光原装正品M29DW128F60ZA6E即刻询购立享优惠#长期有货	询价
深圳市英卓尔科技有限公司	M29DW128F70NF6E	Numonyx	20+	TSOP-48	2960	诚信交易大量库存现货	询价
深圳市威雅利发展有限公司	M29DW128F70ZA6F	ST	0836+	BGA64	1363	一级代理,专注军工、汽车、医疗、工业、新能源、电力	询价

M29DW128F芯片相关品牌

M29DW128F规格书下载地址

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M28W160ECB70ZB6 ST/Micron
www.hfxcom.com.
2021-11-11
M28C64-A256，M28C64C-15M6，M28C64C-20M1，M28C64X-15M1，M28F101-100K1，M28LV16-25M6，M28LV17-25M6，M28LV64C-20M6，M29F102B-70K1，M34116B1，M74HC00，M74ACT74，M74ACT257，M74HC163，M74HC04，M74HC123
M28C64-A256，M28C64C-15M6，M28C64C-20M1，M28C64X-15M1，M28F101-100K1，M28LV16-25M6，M28LV17-25M6，M28LV64C-20M6，M29F102B-70K1，M34116B1，M74HC00，M74ACT74，M74ACT257，M74HC163，M74HC04，M74HC123
2019-12-29
M29W128GL70ZS6E顺德利科技正品原装进口稳定的货源优势的价格
深圳市顺德利科技有限公司 0755-82725660 18128853661（微信75056055） QQ：782954141
2019-6-18
M28W320FCT70N6E顺德利科技正品原装进口稳定的货源优势的价格
深圳市顺德利科技有限公司 0755-82725660 18128853661（微信75056055） QQ：782954141
2019-6-18
M29W128GH70N6E顺德利科技正品原装进口稳定的货源优势的价格
深圳市顺德利科技有限公司 0755-82725660 18128853661（微信75056055） QQ：782954141
2019-6-18
M29W128GL70N6E顺德利科技正品原装进口稳定的货源优势的价格
深圳市顺德利科技有限公司 0755-82725660 18128853661（微信75056055） QQ：782954141
2019-6-18

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M29DW128F芯片相关品牌

M29DW128F规格书下载地址

M29DW128F参数引脚图相关

M29DW128F数据表相关新闻

M28W160ECB70ZB6 ST/Micron

M28C64-A256，M28C64C-15M6，M28C64C-20M1，M28C64X-15M1，M28F101-100K1，M28LV16-25M6，M28LV17-25M6，M28LV64C-20M6，M29F102B-70K1，M34116B1，M74HC00，M74ACT74，M74ACT257，M74HC163，M74HC04，M74HC123

M29W128GL70ZS6E顺德利科技正品原装进口稳定的货源优势的价格

M28W320FCT70N6E顺德利科技正品原装进口稳定的货源优势的价格

M29W128GH70N6E顺德利科技正品原装进口稳定的货源优势的价格

M29W128GL70N6E顺德利科技正品原装进口稳定的货源优势的价格

DdatasheetPDF页码索引