型号 功能描述 生产厂家 企业 LOGO 操作
M29DW128F70NF1

128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory

Features summary ■ Supply Voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VCCQ= 1.65V to 3.6V for Input/Output – VPP =12V for Fast Program (optional) ■ ASYNCHRONOUS RANDOM/PAGE READ – Page Width: 8 Words – Page Access: 25, 30ns – Random Access: 60, 70ns ■ PROGRAMMING TIME – 1

STMICROELECTRONICS

意法半导体

M29DW128F70NF1

128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory

文件:756.04 Kbytes Page:94 Pages

STMICROELECTRONICS

意法半导体

M29DW128F70NF1

128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory

文件:1.78901 Mbytes Page:94 Pages

NUMONYX

128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory

Features summary ■ Supply Voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VCCQ= 1.65V to 3.6V for Input/Output – VPP =12V for Fast Program (optional) ■ ASYNCHRONOUS RANDOM/PAGE READ – Page Width: 8 Words – Page Access: 25, 30ns – Random Access: 60, 70ns ■ PROGRAMMING TIME – 1

STMICROELECTRONICS

意法半导体

128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory

Features summary ■ Supply Voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VCCQ= 1.65V to 3.6V for Input/Output – VPP =12V for Fast Program (optional) ■ ASYNCHRONOUS RANDOM/PAGE READ – Page Width: 8 Words – Page Access: 25, 30ns – Random Access: 60, 70ns ■ PROGRAMMING TIME – 1

STMICROELECTRONICS

意法半导体

128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory

Features summary ■ Supply Voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VCCQ= 1.65V to 3.6V for Input/Output – VPP =12V for Fast Program (optional) ■ ASYNCHRONOUS RANDOM/PAGE READ – Page Width: 8 Words – Page Access: 25, 30ns – Random Access: 60, 70ns ■ PROGRAMMING TIME – 1

STMICROELECTRONICS

意法半导体

128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory

文件:756.04 Kbytes Page:94 Pages

STMICROELECTRONICS

意法半导体

128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory

文件:1.78901 Mbytes Page:94 Pages

NUMONYX

128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory

文件:756.04 Kbytes Page:94 Pages

STMICROELECTRONICS

意法半导体

128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory

文件:1.78901 Mbytes Page:94 Pages

NUMONYX

128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory

文件:1.78901 Mbytes Page:94 Pages

NUMONYX

128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory

文件:756.04 Kbytes Page:94 Pages

STMICROELECTRONICS

意法半导体

M29DW128F70NF1产品属性

  • 类型

    描述

  • 型号

    M29DW128F70NF1

  • 制造商

    NUMONYX

  • 制造商全称

    Numonyx B.V

  • 功能描述

    128 Mbit(16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory

更新时间:2025-11-21 10:48:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ST
23+
SMD
8560
受权代理!全新原装现货特价热卖!
Micron
25+
电联咨询
7800
公司现货,提供拆样技术支持
ST
23+
NA
20000
全新原装假一赔十
ST
25+
FBGA
16900
原装,请咨询
Micron
22+
56TSOP (14x20)
9000
原厂渠道,现货配单
Micron Technology Inc.
25+
56-TFSOP(0.724 18.40mm 宽)
9350
独立分销商 公司只做原装 诚心经营 免费试样正品保证
STM
25+
BGA64
2568
原装优势!绝对公司现货
ST/意法
23+
FBGA
98900
原厂原装正品现货!!
ST
20+
TSOP
2960
诚信交易大量库存现货
MAXIC
23+24
N.SO
27960
原装现货.优势热卖.终端BOM表可配单

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