型号 功能描述 生产厂家 企业 LOGO 操作
M29DW128F70NF1

128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory

Features summary ■ Supply Voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VCCQ= 1.65V to 3.6V for Input/Output – VPP =12V for Fast Program (optional) ■ ASYNCHRONOUS RANDOM/PAGE READ – Page Width: 8 Words – Page Access: 25, 30ns – Random Access: 60, 70ns ■ PROGRAMMING TIME – 1

STMICROELECTRONICS

意法半导体

M29DW128F70NF1

128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory

文件:756.04 Kbytes Page:94 Pages

STMICROELECTRONICS

意法半导体

M29DW128F70NF1

128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory

文件:1.78901 Mbytes Page:94 Pages

NUMONYX

128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory

Features summary ■ Supply Voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VCCQ= 1.65V to 3.6V for Input/Output – VPP =12V for Fast Program (optional) ■ ASYNCHRONOUS RANDOM/PAGE READ – Page Width: 8 Words – Page Access: 25, 30ns – Random Access: 60, 70ns ■ PROGRAMMING TIME – 1

STMICROELECTRONICS

意法半导体

128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory

Features summary ■ Supply Voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VCCQ= 1.65V to 3.6V for Input/Output – VPP =12V for Fast Program (optional) ■ ASYNCHRONOUS RANDOM/PAGE READ – Page Width: 8 Words – Page Access: 25, 30ns – Random Access: 60, 70ns ■ PROGRAMMING TIME – 1

STMICROELECTRONICS

意法半导体

128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory

Features summary ■ Supply Voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VCCQ= 1.65V to 3.6V for Input/Output – VPP =12V for Fast Program (optional) ■ ASYNCHRONOUS RANDOM/PAGE READ – Page Width: 8 Words – Page Access: 25, 30ns – Random Access: 60, 70ns ■ PROGRAMMING TIME – 1

STMICROELECTRONICS

意法半导体

128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory

文件:756.04 Kbytes Page:94 Pages

STMICROELECTRONICS

意法半导体

128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory

文件:1.78901 Mbytes Page:94 Pages

NUMONYX

128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory

文件:756.04 Kbytes Page:94 Pages

STMICROELECTRONICS

意法半导体

128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory

文件:1.78901 Mbytes Page:94 Pages

NUMONYX

128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory

文件:1.78901 Mbytes Page:94 Pages

NUMONYX

128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory

文件:756.04 Kbytes Page:94 Pages

STMICROELECTRONICS

意法半导体

M29DW128F70NF1产品属性

  • 类型

    描述

  • 型号

    M29DW128F70NF1

  • 制造商

    NUMONYX

  • 制造商全称

    Numonyx B.V

  • 功能描述

    128 Mbit(16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory

更新时间:2026-1-28 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
Micron Technology Inc.
25+
56-TSOP
6843
样件支持,可原厂排单订货!
Micron Technology Inc.
25+
56-TSOP
6895
正规渠道,免费送样。支持账期,BOM一站式配齐
ST
23+
NA
20000
全新原装假一赔十
ST/意法
24+
FBGA
35472
只做原装 公司现货库存
ST/PBF
0719+
TSSOP
446
一级代理,专注军工、汽车、医疗、工业、新能源、电力
ST/意法
2026+
FBGA
996880
只做原装,欢迎来电资询
ST/PBF
24+
TSSOP
880000
明嘉莱只做原装正品现货
ST
23+
FBGA
16900
正规渠道,只有原装!
Micron Technology Inc.
18500
全新原厂原装现货!受权代理!可送样可提供技术支持!
ST
20+
TSOP
2960
诚信交易大量库存现货

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