型号 功能描述 生产厂家 企业 LOGO 操作
M29DW128F70NF6

128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory

Features summary ■ Supply Voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VCCQ= 1.65V to 3.6V for Input/Output – VPP =12V for Fast Program (optional) ■ ASYNCHRONOUS RANDOM/PAGE READ – Page Width: 8 Words – Page Access: 25, 30ns – Random Access: 60, 70ns ■ PROGRAMMING TIME – 1

STMICROELECTRONICS

意法半导体

M29DW128F70NF6

128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory

文件:756.04 Kbytes Page:94 Pages

STMICROELECTRONICS

意法半导体

M29DW128F70NF6

128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory

文件:1.78901 Mbytes Page:94 Pages

NUMONYX

128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory

Features summary ■ Supply Voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VCCQ= 1.65V to 3.6V for Input/Output – VPP =12V for Fast Program (optional) ■ ASYNCHRONOUS RANDOM/PAGE READ – Page Width: 8 Words – Page Access: 25, 30ns – Random Access: 60, 70ns ■ PROGRAMMING TIME – 1

STMICROELECTRONICS

意法半导体

128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory

Features summary ■ Supply Voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VCCQ= 1.65V to 3.6V for Input/Output – VPP =12V for Fast Program (optional) ■ ASYNCHRONOUS RANDOM/PAGE READ – Page Width: 8 Words – Page Access: 25, 30ns – Random Access: 60, 70ns ■ PROGRAMMING TIME – 1

STMICROELECTRONICS

意法半导体

128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory

Features summary ■ Supply Voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VCCQ= 1.65V to 3.6V for Input/Output – VPP =12V for Fast Program (optional) ■ ASYNCHRONOUS RANDOM/PAGE READ – Page Width: 8 Words – Page Access: 25, 30ns – Random Access: 60, 70ns ■ PROGRAMMING TIME – 1

STMICROELECTRONICS

意法半导体

128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory

文件:756.04 Kbytes Page:94 Pages

STMICROELECTRONICS

意法半导体

封装/外壳:56-TFSOP(0.724",18.40mm 宽) 包装:管件 描述:IC FLASH 128MBIT PARALLEL 56TSOP 集成电路(IC) 存储器

ETC

知名厂家

128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory

文件:1.78901 Mbytes Page:94 Pages

NUMONYX

128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory

文件:1.78901 Mbytes Page:94 Pages

NUMONYX

128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory

文件:756.04 Kbytes Page:94 Pages

STMICROELECTRONICS

意法半导体

128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory

文件:1.78901 Mbytes Page:94 Pages

NUMONYX

128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory

文件:756.04 Kbytes Page:94 Pages

STMICROELECTRONICS

意法半导体

M29DW128F70NF6产品属性

  • 类型

    描述

  • 型号

    M29DW128F70NF6

  • 制造商

    NUMONYX

  • 制造商全称

    Numonyx B.V

  • 功能描述

    128 Mbit(16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory

更新时间:2025-11-20 15:24:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ST/PBF
24+
NA/
446
优势代理渠道,原装正品,可全系列订货开增值税票
Micron
22+
56TSOP (14x20)
9000
原厂渠道,现货配单
Micron Technology Inc.
21+
60-TFBGA
5280
进口原装!长期供应!绝对优势价格(诚信经营
ST/意法
25+
FBGA
996880
只做原装,欢迎来电资询
ST
2447
TSOP56
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
ST/意法
24+
FBGA
35472
只做原装 公司现货库存
ST
25+
FBGA
16900
原装,请咨询
Micron Technology Inc.
25+
56-TFSOP(0.724 18.40mm 宽)
9350
独立分销商 公司只做原装 诚心经营 免费试样正品保证
ST
23+
FBGA
16900
正规渠道,只有原装!
ST
20+
TSOP
2960
诚信交易大量库存现货

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