型号 功能描述 生产厂家 企业 LOGO 操作
M29DW128F70ZA1

128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory

Features summary ■ Supply Voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VCCQ= 1.65V to 3.6V for Input/Output – VPP =12V for Fast Program (optional) ■ ASYNCHRONOUS RANDOM/PAGE READ – Page Width: 8 Words – Page Access: 25, 30ns – Random Access: 60, 70ns ■ PROGRAMMING TIME – 1

STMICROELECTRONICS

意法半导体

M29DW128F70ZA1

128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory

文件:756.04 Kbytes Page:94 Pages

STMICROELECTRONICS

意法半导体

M29DW128F70ZA1

128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory

文件:1.78901 Mbytes Page:94 Pages

NUMONYX

128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory

Features summary ■ Supply Voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VCCQ= 1.65V to 3.6V for Input/Output – VPP =12V for Fast Program (optional) ■ ASYNCHRONOUS RANDOM/PAGE READ – Page Width: 8 Words – Page Access: 25, 30ns – Random Access: 60, 70ns ■ PROGRAMMING TIME – 1

STMICROELECTRONICS

意法半导体

128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory

Features summary ■ Supply Voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VCCQ= 1.65V to 3.6V for Input/Output – VPP =12V for Fast Program (optional) ■ ASYNCHRONOUS RANDOM/PAGE READ – Page Width: 8 Words – Page Access: 25, 30ns – Random Access: 60, 70ns ■ PROGRAMMING TIME – 1

STMICROELECTRONICS

意法半导体

128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory

Features summary ■ Supply Voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VCCQ= 1.65V to 3.6V for Input/Output – VPP =12V for Fast Program (optional) ■ ASYNCHRONOUS RANDOM/PAGE READ – Page Width: 8 Words – Page Access: 25, 30ns – Random Access: 60, 70ns ■ PROGRAMMING TIME – 1

STMICROELECTRONICS

意法半导体

128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory

文件:756.04 Kbytes Page:94 Pages

STMICROELECTRONICS

意法半导体

128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory

文件:1.78901 Mbytes Page:94 Pages

NUMONYX

128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory

文件:1.78901 Mbytes Page:94 Pages

NUMONYX

128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory

文件:756.04 Kbytes Page:94 Pages

STMICROELECTRONICS

意法半导体

128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory

文件:756.04 Kbytes Page:94 Pages

STMICROELECTRONICS

意法半导体

128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory

文件:1.78901 Mbytes Page:94 Pages

NUMONYX

M29DW128F70ZA1产品属性

  • 类型

    描述

  • 型号

    M29DW128F70ZA1

  • 制造商

    NUMONYX

  • 制造商全称

    Numonyx B.V

  • 功能描述

    128 Mbit(16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory

更新时间:2025-11-20 15:20:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
Micron
22+
64TBGA
9000
原厂渠道,现货配单
MICRON/美光
24+
TGBA
553
美光专营原装正品
MICRON/镁光
24+
BGA
9600
原装现货,优势供应,支持实单!
Micron Technology Inc.
21+
60-TFBGA
5280
进口原装!长期供应!绝对优势价格(诚信经营
ST/意法
25+
FBGA
996880
只做原装,欢迎来电资询
ST
2447
BGA64
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
ST/意法
24+
FBGA
35472
只做原装 公司现货库存
MICRON
25+23+
BGA
38140
绝对原装正品全新进口深圳现货
ST
25+
FBGA
16900
原装,请咨询
Micron Technology Inc.
25+
64-TBGA
9350
独立分销商 公司只做原装 诚心经营 免费试样正品保证

M29DW128F70ZA1芯片相关品牌

M29DW128F70ZA1数据表相关新闻