型号 功能描述 生产厂家 企业 LOGO 操作
M29DW128F70ZA6

128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory

Features summary ■ Supply Voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VCCQ= 1.65V to 3.6V for Input/Output – VPP =12V for Fast Program (optional) ■ ASYNCHRONOUS RANDOM/PAGE READ – Page Width: 8 Words – Page Access: 25, 30ns – Random Access: 60, 70ns ■ PROGRAMMING TIME – 1

STMICROELECTRONICS

意法半导体

M29DW128F70ZA6

128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory

文件:1.78901 Mbytes Page:94 Pages

NUMONYX

M29DW128F70ZA6

128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory

文件:756.04 Kbytes Page:94 Pages

STMICROELECTRONICS

意法半导体

128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory

Features summary ■ Supply Voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VCCQ= 1.65V to 3.6V for Input/Output – VPP =12V for Fast Program (optional) ■ ASYNCHRONOUS RANDOM/PAGE READ – Page Width: 8 Words – Page Access: 25, 30ns – Random Access: 60, 70ns ■ PROGRAMMING TIME – 1

STMICROELECTRONICS

意法半导体

128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory

Features summary ■ Supply Voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VCCQ= 1.65V to 3.6V for Input/Output – VPP =12V for Fast Program (optional) ■ ASYNCHRONOUS RANDOM/PAGE READ – Page Width: 8 Words – Page Access: 25, 30ns – Random Access: 60, 70ns ■ PROGRAMMING TIME – 1

STMICROELECTRONICS

意法半导体

128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory

Features summary ■ Supply Voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VCCQ= 1.65V to 3.6V for Input/Output – VPP =12V for Fast Program (optional) ■ ASYNCHRONOUS RANDOM/PAGE READ – Page Width: 8 Words – Page Access: 25, 30ns – Random Access: 60, 70ns ■ PROGRAMMING TIME – 1

STMICROELECTRONICS

意法半导体

128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory

文件:756.04 Kbytes Page:94 Pages

STMICROELECTRONICS

意法半导体

128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory

文件:1.78901 Mbytes Page:94 Pages

NUMONYX

128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory

文件:756.04 Kbytes Page:94 Pages

STMICROELECTRONICS

意法半导体

128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory

文件:1.78901 Mbytes Page:94 Pages

NUMONYX

封装/外壳:64-TBGA 包装:管件 描述:IC FLASH 128MBIT PARALLEL 64TBGA 集成电路(IC) 存储器

ETC

知名厂家

128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory

文件:1.78901 Mbytes Page:94 Pages

NUMONYX

128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory

文件:756.04 Kbytes Page:94 Pages

STMICROELECTRONICS

意法半导体

M29DW128F70ZA6产品属性

  • 类型

    描述

  • 型号

    M29DW128F70ZA6

  • 制造商

    NUMONYX

  • 制造商全称

    Numonyx B.V

  • 功能描述

    128 Mbit(16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory

更新时间:2025-11-21 15:04:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ST/意法
24+
FBGA
35472
只做原装 公司现货库存
Micron
17+
6200
ST
2447
BGA64
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
NA
25+
NA
90
全新原装正品支持含税
MICRON
25+23+
BGA
38140
绝对原装正品全新进口深圳现货
Micron Technology Inc.
24+
64-TBGA(10x13)
56200
一级代理/放心采购
STM
BGA64
53650
一级代理 原装正品假一罚十价格优势长期供货
MICRON/美光
22+
BGA
12245
现货,原厂原装假一罚十!
MICRON/美光
23+
FBGA
3000
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、
ST/意法
25+
FBGA
996880
只做原装,欢迎来电资询

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