位置:M29DW128F70ZA6T > M29DW128F70ZA6T详情

M29DW128F70ZA6T中文资料

厂家型号

M29DW128F70ZA6T

文件大小

719.73Kbytes

页面数量

93

功能描述

128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V Supply, Flash Memory

128 Mbit(16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory

数据手册

下载地址一下载地址二到原厂下载

生产厂商

STMICROELECTRONICS

M29DW128F70ZA6T数据手册规格书PDF详情

Features summary

■ Supply Voltage

– VCC = 2.7V to 3.6V for Program, Erase and

Read

– VCCQ= 1.65V to 3.6V for Input/Output

– VPP =12V for Fast Program (optional)

■ ASYNCHRONOUS RANDOM/PAGE READ

– Page Width: 8 Words

– Page Access: 25, 30ns

– Random Access: 60, 70ns

■ PROGRAMMING TIME

– 10µs per Byte/Word typical

– 4 Words / 8 Bytes Program

– 32-Word Write Buffer

■ ERASE VERIFY

■ MEMORY BLOCKS

– Quadruple Bank Memory Array:

16Mbit+48Mbit+48Mbit+16Mbit

– Parameter Blocks (at Top and Bottom)

■ DUAL OPERATIONS

– While Program or Erase in one bank, Read

in any of the other banks

■ PROGRAM/ ERASE SUSPEND and RESUME

MODES

– Read from any Block during Program

Suspend

– Read and Program another Block during

Erase Suspend

■ UNLOCK BYPASS PROGRAM

– Faster Production/Batch Programming

■ COMMON FLASH INTERFACE

– 64 bit Security Code

■ 100,000 PROGRAM/ERASE CYCLES per

BLOCK

■ LOW POWER CONSUMPTION

– Standby and Automatic Standby

■ HARDWARE BLOCK PROTECTION

– VPP/WP Pin for fast program and write

protect of the four outermost parameter

blocks

■ SECURITY FEATURES

– Standard Protection

– Password Protection

■ EXTENDED MEMORY BLOCK

– Extra block used as security block or to

store additional information

■ ELECTRONIC SIGNATURE

– Manufacturer Code: 0020h

– Device Code: 227Eh + 2220h + 2200h

■ ECOPACK® PACKAGES AVAILABLE

M29DW128F70ZA6T产品属性

  • 类型

    描述

  • 型号

    M29DW128F70ZA6T

  • 制造商

    NUMONYX

  • 制造商全称

    Numonyx B.V

  • 功能描述

    128 Mbit(16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory

更新时间:2025-10-11 8:30:00
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