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型号	功能描述	生产厂家企业	LOGO
LMG3410	600-V 12-A Single Channel GaN Power Stage 文件：682.96 Kbytes Page：33 Pages	TI 德州仪器	TI
LMG3410	600-V 12-A Single Channel GaN Power Stage 文件：636.02 Kbytes Page：29 Pages	TI 德州仪器	TI
LMG3410	LMG3410 Spitfire - 具有集成驱动器和安全开关的智能 GaN FET	TI 德州仪器	TI
LMG3410R050	LMG341xR050 600-V 50-mΩ Integrated GaN Fet Power Stage With Overcurrent Protection 1 Features 1• TI GaN FET reliability qualified with in-application hard-switching accelerated stress profiles • Enables high density power conversion designs – Superior system performance over cascode or stand-alone GaN FETs – Low inductance 8 mm x 8 mm QFN package for ease of design, and l	TI 德州仪器	TI
LMG3410R050	LMG341xR050 600-V 50-mΩ Integrated GaN Fet Power Stage With Overcurrent Protection 1 Features 1• TI GaN FET reliability qualified with in-application hard-switching accelerated stress profiles • Enables high density power conversion designs – Superior system performance over cascode or stand-alone GaN FETs – Low inductance 8 mm x 8 mm QFN package for ease of design, and l	TI 德州仪器	TI
LMG3410R050	LMG341xR050 600-V 50-mΩ Integrated GaN Fet Power Stage With Overcurrent Protection 1 Features 1• TI GaN FET reliability qualified with in-application hard-switching accelerated stress profiles • Enables high density power conversion designs – Superior system performance over cascode or stand-alone GaN FETs – Low inductance 8 mm x 8 mm QFN package for ease of design, and l	TI 德州仪器	TI
LMG3410R050_V01	LMG341xR050 600-V 50-mΩ Integrated GaN Fet Power Stage With Overcurrent Protection 1 Features 1• TI GaN FET reliability qualified with in-application hard-switching accelerated stress profiles • Enables high density power conversion designs – Superior system performance over cascode or stand-alone GaN FETs – Low inductance 8 mm x 8 mm QFN package for ease of design, and l	TI 德州仪器	TI
LMG3410R050RWHR	LMG341xR050 600-V 50-mΩ Integrated GaN Fet Power Stage With Overcurrent Protection 1 Features 1• TI GaN FET reliability qualified with in-application hard-switching accelerated stress profiles • Enables high density power conversion designs – Superior system performance over cascode or stand-alone GaN FETs – Low inductance 8 mm x 8 mm QFN package for ease of design, and l	TI 德州仪器	TI
LMG3410R050RWHR	LMG341xR050 600-V 50-mΩ Integrated GaN Fet Power Stage With Overcurrent Protection 1 Features 1• TI GaN FET reliability qualified with in-application hard-switching accelerated stress profiles • Enables high density power conversion designs – Superior system performance over cascode or stand-alone GaN FETs – Low inductance 8 mm x 8 mm QFN package for ease of design, and l	TI 德州仪器	TI
LMG3410R050RWHR	LMG341xR050 600-V 50-mΩ Integrated GaN Fet Power Stage With Overcurrent Protection 1 Features 1• TI GaN FET reliability qualified with in-application hard-switching accelerated stress profiles • Enables high density power conversion designs – Superior system performance over cascode or stand-alone GaN FETs – Low inductance 8 mm x 8 mm QFN package for ease of design, and l	TI 德州仪器	TI
LMG3410R050RWHR.A	LMG341xR050 600-V 50-mΩ Integrated GaN Fet Power Stage With Overcurrent Protection 1 Features 1• TI GaN FET reliability qualified with in-application hard-switching accelerated stress profiles • Enables high density power conversion designs – Superior system performance over cascode or stand-alone GaN FETs – Low inductance 8 mm x 8 mm QFN package for ease of design, and l	TI 德州仪器	TI
LMG3410R050RWHR.A	LMG341xR050 600-V 50-mΩ Integrated GaN Fet Power Stage With Overcurrent Protection 1 Features 1• TI GaN FET reliability qualified with in-application hard-switching accelerated stress profiles • Enables high density power conversion designs – Superior system performance over cascode or stand-alone GaN FETs – Low inductance 8 mm x 8 mm QFN package for ease of design, and l	TI 德州仪器	TI
LMG3410R050RWHR.A	LMG341xR050 600-V 50-mΩ Integrated GaN Fet Power Stage With Overcurrent Protection 1 Features 1• TI GaN FET reliability qualified with in-application hard-switching accelerated stress profiles • Enables high density power conversion designs – Superior system performance over cascode or stand-alone GaN FETs – Low inductance 8 mm x 8 mm QFN package for ease of design, and l	TI 德州仪器	TI
LMG3410R050RWHR.B	LMG341xR050 600-V 50-mΩ Integrated GaN Fet Power Stage With Overcurrent Protection 1 Features 1• TI GaN FET reliability qualified with in-application hard-switching accelerated stress profiles • Enables high density power conversion designs – Superior system performance over cascode or stand-alone GaN FETs – Low inductance 8 mm x 8 mm QFN package for ease of design, and l	TI 德州仪器	TI
LMG3410R050RWHR.B	LMG341xR050 600-V 50-mΩ Integrated GaN Fet Power Stage With Overcurrent Protection 1 Features 1• TI GaN FET reliability qualified with in-application hard-switching accelerated stress profiles • Enables high density power conversion designs – Superior system performance over cascode or stand-alone GaN FETs – Low inductance 8 mm x 8 mm QFN package for ease of design, and l	TI 德州仪器	TI
LMG3410R050RWHR.B	LMG341xR050 600-V 50-mΩ Integrated GaN Fet Power Stage With Overcurrent Protection 1 Features 1• TI GaN FET reliability qualified with in-application hard-switching accelerated stress profiles • Enables high density power conversion designs – Superior system performance over cascode or stand-alone GaN FETs – Low inductance 8 mm x 8 mm QFN package for ease of design, and l	TI 德州仪器	TI
LMG3410R050RWHRG4	LMG341xR050 600-V 50-mΩ Integrated GaN Fet Power Stage With Overcurrent Protection 1 Features 1• TI GaN FET reliability qualified with in-application hard-switching accelerated stress profiles • Enables high density power conversion designs – Superior system performance over cascode or stand-alone GaN FETs – Low inductance 8 mm x 8 mm QFN package for ease of design, and l	TI 德州仪器	TI
LMG3410R050RWHRG4.A	LMG341xR050 600-V 50-mΩ Integrated GaN Fet Power Stage With Overcurrent Protection 1 Features 1• TI GaN FET reliability qualified with in-application hard-switching accelerated stress profiles • Enables high density power conversion designs – Superior system performance over cascode or stand-alone GaN FETs – Low inductance 8 mm x 8 mm QFN package for ease of design, and l	TI 德州仪器	TI
LMG3410R050RWHRG4.A	LMG341xR050 600-V 50-mΩ Integrated GaN Fet Power Stage With Overcurrent Protection 1 Features 1• TI GaN FET reliability qualified with in-application hard-switching accelerated stress profiles • Enables high density power conversion designs – Superior system performance over cascode or stand-alone GaN FETs – Low inductance 8 mm x 8 mm QFN package for ease of design, and l	TI 德州仪器	TI
LMG3410R050RWHRG4.A	LMG341xR050 600-V 50-mΩ Integrated GaN Fet Power Stage With Overcurrent Protection 1 Features 1• TI GaN FET reliability qualified with in-application hard-switching accelerated stress profiles • Enables high density power conversion designs – Superior system performance over cascode or stand-alone GaN FETs – Low inductance 8 mm x 8 mm QFN package for ease of design, and l	TI 德州仪器	TI
LMG3410R050RWHRG4.B	LMG341xR050 600-V 50-mΩ Integrated GaN Fet Power Stage With Overcurrent Protection 1 Features 1• TI GaN FET reliability qualified with in-application hard-switching accelerated stress profiles • Enables high density power conversion designs – Superior system performance over cascode or stand-alone GaN FETs – Low inductance 8 mm x 8 mm QFN package for ease of design, and l	TI 德州仪器	TI
LMG3410R050RWHRG4.B	LMG341xR050 600-V 50-mΩ Integrated GaN Fet Power Stage With Overcurrent Protection 1 Features 1• TI GaN FET reliability qualified with in-application hard-switching accelerated stress profiles • Enables high density power conversion designs – Superior system performance over cascode or stand-alone GaN FETs – Low inductance 8 mm x 8 mm QFN package for ease of design, and l	TI 德州仪器	TI
LMG3410R050RWHRG4.B	LMG341xR050 600-V 50-mΩ Integrated GaN Fet Power Stage With Overcurrent Protection 1 Features 1• TI GaN FET reliability qualified with in-application hard-switching accelerated stress profiles • Enables high density power conversion designs – Superior system performance over cascode or stand-alone GaN FETs – Low inductance 8 mm x 8 mm QFN package for ease of design, and l	TI 德州仪器	TI
LMG3410R050RWHT	LMG341xR050 600-V 50-mΩ Integrated GaN Fet Power Stage With Overcurrent Protection 1 Features 1• TI GaN FET reliability qualified with in-application hard-switching accelerated stress profiles • Enables high density power conversion designs – Superior system performance over cascode or stand-alone GaN FETs – Low inductance 8 mm x 8 mm QFN package for ease of design, and l	TI 德州仪器	TI
LMG3410R050RWHT	LMG341xR050 600-V 50-mΩ Integrated GaN Fet Power Stage With Overcurrent Protection 1 Features 1• TI GaN FET reliability qualified with in-application hard-switching accelerated stress profiles • Enables high density power conversion designs – Superior system performance over cascode or stand-alone GaN FETs – Low inductance 8 mm x 8 mm QFN package for ease of design, and l	TI 德州仪器	TI
LMG3410R050RWHT	LMG341xR050 600-V 50-mΩ Integrated GaN Fet Power Stage With Overcurrent Protection 1 Features 1• TI GaN FET reliability qualified with in-application hard-switching accelerated stress profiles • Enables high density power conversion designs – Superior system performance over cascode or stand-alone GaN FETs – Low inductance 8 mm x 8 mm QFN package for ease of design, and l	TI 德州仪器	TI
LMG3410R050RWHT.A	LMG341xR050 600-V 50-mΩ Integrated GaN Fet Power Stage With Overcurrent Protection 1 Features 1• TI GaN FET reliability qualified with in-application hard-switching accelerated stress profiles • Enables high density power conversion designs – Superior system performance over cascode or stand-alone GaN FETs – Low inductance 8 mm x 8 mm QFN package for ease of design, and l	TI 德州仪器	TI
LMG3410R050RWHT.A	LMG341xR050 600-V 50-mΩ Integrated GaN Fet Power Stage With Overcurrent Protection 1 Features 1• TI GaN FET reliability qualified with in-application hard-switching accelerated stress profiles • Enables high density power conversion designs – Superior system performance over cascode or stand-alone GaN FETs – Low inductance 8 mm x 8 mm QFN package for ease of design, and l	TI 德州仪器	TI
LMG3410R050RWHT.A	LMG341xR050 600-V 50-mΩ Integrated GaN Fet Power Stage With Overcurrent Protection 1 Features 1• TI GaN FET reliability qualified with in-application hard-switching accelerated stress profiles • Enables high density power conversion designs – Superior system performance over cascode or stand-alone GaN FETs – Low inductance 8 mm x 8 mm QFN package for ease of design, and l	TI 德州仪器	TI
LMG3410R050RWHT.B	LMG341xR050 600-V 50-mΩ Integrated GaN Fet Power Stage With Overcurrent Protection 1 Features 1• TI GaN FET reliability qualified with in-application hard-switching accelerated stress profiles • Enables high density power conversion designs – Superior system performance over cascode or stand-alone GaN FETs – Low inductance 8 mm x 8 mm QFN package for ease of design, and l	TI 德州仪器	TI
LMG3410R050RWHT.B	LMG341xR050 600-V 50-mΩ Integrated GaN Fet Power Stage With Overcurrent Protection 1 Features 1• TI GaN FET reliability qualified with in-application hard-switching accelerated stress profiles • Enables high density power conversion designs – Superior system performance over cascode or stand-alone GaN FETs – Low inductance 8 mm x 8 mm QFN package for ease of design, and l	TI 德州仪器	TI
LMG3410R050RWHT.B	LMG341xR050 600-V 50-mΩ Integrated GaN Fet Power Stage With Overcurrent Protection 1 Features 1• TI GaN FET reliability qualified with in-application hard-switching accelerated stress profiles • Enables high density power conversion designs – Superior system performance over cascode or stand-alone GaN FETs – Low inductance 8 mm x 8 mm QFN package for ease of design, and l	TI 德州仪器	TI
LMG3410R070	LMG341xR070 600-V 70-mΩ GaN with Integrated Driver and Protection 1 Features 1• TI GaN Process Qualified Through Accelerated Reliability In-application Hard-switching Mission Profiles • Enables High Density Power Conversion Designs – Superior System Performance Over Cascode or Stand-alone GaN FETs – Low Inductance 8mm x 8mm QFN Package for Ease of Design	TI 德州仪器	TI
LMG3410R070	LMG341xR070 600-V 70-mΩ GaN with Integrated Driver and Protection 1 Features 1• TI GaN Process Qualified Through Accelerated Reliability In-application Hard-switching Mission Profiles • Enables High Density Power Conversion Designs – Superior System Performance Over Cascode or Stand-alone GaN FETs – Low Inductance 8mm x 8mm QFN Package for Ease of Design	TI 德州仪器	TI
LMG3410R070_V01	LMG341xR070 600-V 70-mΩ GaN with Integrated Driver and Protection 1 Features 1• TI GaN Process Qualified Through Accelerated Reliability In-application Hard-switching Mission Profiles • Enables High Density Power Conversion Designs – Superior System Performance Over Cascode or Stand-alone GaN FETs – Low Inductance 8mm x 8mm QFN Package for Ease of Design	TI 德州仪器	TI
LMG3410R070RWHR	LMG341xR070 600-V 70-mΩ GaN with Integrated Driver and Protection 1 Features 1• TI GaN Process Qualified Through Accelerated Reliability In-application Hard-switching Mission Profiles • Enables High Density Power Conversion Designs – Superior System Performance Over Cascode or Stand-alone GaN FETs – Low Inductance 8mm x 8mm QFN Package for Ease of Design	TI 德州仪器	TI
LMG3410R070RWHR	LMG341xR070 600-V 70-mΩ GaN with Integrated Driver and Protection 1 Features 1• TI GaN Process Qualified Through Accelerated Reliability In-application Hard-switching Mission Profiles • Enables High Density Power Conversion Designs – Superior System Performance Over Cascode or Stand-alone GaN FETs – Low Inductance 8mm x 8mm QFN Package for Ease of Design	TI 德州仪器	TI
LMG3410R070RWHR.A	LMG341xR070 600-V 70-mΩ GaN with Integrated Driver and Protection 1 Features 1• TI GaN Process Qualified Through Accelerated Reliability In-application Hard-switching Mission Profiles • Enables High Density Power Conversion Designs – Superior System Performance Over Cascode or Stand-alone GaN FETs – Low Inductance 8mm x 8mm QFN Package for Ease of Design	TI 德州仪器	TI
LMG3410R070RWHR.A	LMG341xR070 600-V 70-mΩ GaN with Integrated Driver and Protection 1 Features 1• TI GaN Process Qualified Through Accelerated Reliability In-application Hard-switching Mission Profiles • Enables High Density Power Conversion Designs – Superior System Performance Over Cascode or Stand-alone GaN FETs – Low Inductance 8mm x 8mm QFN Package for Ease of Design	TI 德州仪器	TI
LMG3410R070RWHR.B	LMG341xR070 600-V 70-mΩ GaN with Integrated Driver and Protection 1 Features 1• TI GaN Process Qualified Through Accelerated Reliability In-application Hard-switching Mission Profiles • Enables High Density Power Conversion Designs – Superior System Performance Over Cascode or Stand-alone GaN FETs – Low Inductance 8mm x 8mm QFN Package for Ease of Design	TI 德州仪器	TI
LMG3410R070RWHR.B	LMG341xR070 600-V 70-mΩ GaN with Integrated Driver and Protection 1 Features 1• TI GaN Process Qualified Through Accelerated Reliability In-application Hard-switching Mission Profiles • Enables High Density Power Conversion Designs – Superior System Performance Over Cascode or Stand-alone GaN FETs – Low Inductance 8mm x 8mm QFN Package for Ease of Design	TI 德州仪器	TI
LMG3410R070RWHT	LMG341xR070 600-V 70-mΩ GaN with Integrated Driver and Protection 1 Features 1• TI GaN Process Qualified Through Accelerated Reliability In-application Hard-switching Mission Profiles • Enables High Density Power Conversion Designs – Superior System Performance Over Cascode or Stand-alone GaN FETs – Low Inductance 8mm x 8mm QFN Package for Ease of Design	TI 德州仪器	TI
LMG3410R070RWHT	LMG341xR070 600-V 70-mΩ GaN with Integrated Driver and Protection 1 Features 1• TI GaN Process Qualified Through Accelerated Reliability In-application Hard-switching Mission Profiles • Enables High Density Power Conversion Designs – Superior System Performance Over Cascode or Stand-alone GaN FETs – Low Inductance 8mm x 8mm QFN Package for Ease of Design	TI 德州仪器	TI
LMG3410R070RWHT.A	LMG341xR070 600-V 70-mΩ GaN with Integrated Driver and Protection 1 Features 1• TI GaN Process Qualified Through Accelerated Reliability In-application Hard-switching Mission Profiles • Enables High Density Power Conversion Designs – Superior System Performance Over Cascode or Stand-alone GaN FETs – Low Inductance 8mm x 8mm QFN Package for Ease of Design	TI 德州仪器	TI
LMG3410R070RWHT.A	LMG341xR070 600-V 70-mΩ GaN with Integrated Driver and Protection 1 Features 1• TI GaN Process Qualified Through Accelerated Reliability In-application Hard-switching Mission Profiles • Enables High Density Power Conversion Designs – Superior System Performance Over Cascode or Stand-alone GaN FETs – Low Inductance 8mm x 8mm QFN Package for Ease of Design	TI 德州仪器	TI
LMG3410R070RWHT.B	LMG341xR070 600-V 70-mΩ GaN with Integrated Driver and Protection 1 Features 1• TI GaN Process Qualified Through Accelerated Reliability In-application Hard-switching Mission Profiles • Enables High Density Power Conversion Designs – Superior System Performance Over Cascode or Stand-alone GaN FETs – Low Inductance 8mm x 8mm QFN Package for Ease of Design	TI 德州仪器	TI
LMG3410R070RWHT.B	LMG341xR070 600-V 70-mΩ GaN with Integrated Driver and Protection 1 Features 1• TI GaN Process Qualified Through Accelerated Reliability In-application Hard-switching Mission Profiles • Enables High Density Power Conversion Designs – Superior System Performance Over Cascode or Stand-alone GaN FETs – Low Inductance 8mm x 8mm QFN Package for Ease of Design	TI 德州仪器	TI
LMG3410R070RWHTG4	LMG341xR070 600-V 70-mΩ GaN with Integrated Driver and Protection 1 Features 1• TI GaN Process Qualified Through Accelerated Reliability In-application Hard-switching Mission Profiles • Enables High Density Power Conversion Designs – Superior System Performance Over Cascode or Stand-alone GaN FETs – Low Inductance 8mm x 8mm QFN Package for Ease of Design	TI 德州仪器	TI
LMG3410R070RWHTG4.A	LMG341xR070 600-V 70-mΩ GaN with Integrated Driver and Protection 1 Features 1• TI GaN Process Qualified Through Accelerated Reliability In-application Hard-switching Mission Profiles • Enables High Density Power Conversion Designs – Superior System Performance Over Cascode or Stand-alone GaN FETs – Low Inductance 8mm x 8mm QFN Package for Ease of Design	TI 德州仪器	TI
LMG3410R070RWHTG4.A	LMG341xR070 600-V 70-mΩ GaN with Integrated Driver and Protection 1 Features 1• TI GaN Process Qualified Through Accelerated Reliability In-application Hard-switching Mission Profiles • Enables High Density Power Conversion Designs – Superior System Performance Over Cascode or Stand-alone GaN FETs – Low Inductance 8mm x 8mm QFN Package for Ease of Design	TI 德州仪器	TI
LMG3410R070RWHTG4.B	LMG341xR070 600-V 70-mΩ GaN with Integrated Driver and Protection 1 Features 1• TI GaN Process Qualified Through Accelerated Reliability In-application Hard-switching Mission Profiles • Enables High Density Power Conversion Designs – Superior System Performance Over Cascode or Stand-alone GaN FETs – Low Inductance 8mm x 8mm QFN Package for Ease of Design	TI 德州仪器	TI
LMG3410R070RWHTG4.B	LMG341xR070 600-V 70-mΩ GaN with Integrated Driver and Protection 1 Features 1• TI GaN Process Qualified Through Accelerated Reliability In-application Hard-switching Mission Profiles • Enables High Density Power Conversion Designs – Superior System Performance Over Cascode or Stand-alone GaN FETs – Low Inductance 8mm x 8mm QFN Package for Ease of Design	TI 德州仪器	TI
LMG3410R150	LMG341xR150 600-V, 150-mΩ, GaN FET with Integrated Driver and Protection 1 Features 1• TI GaN process qualified through accelerated reliability in-application hard-switching profiles • Enables high-density power conversion designs – Superior system performance over cascode or stand-alone GaN FETs – Low inductance 8 mm × 8 mm QFN package for ease of design and la	TI 德州仪器	TI
LMG3410R150RWHR	LMG341xR150 600-V, 150-mΩ, GaN FET with Integrated Driver and Protection 1 Features 1• TI GaN process qualified through accelerated reliability in-application hard-switching profiles • Enables high-density power conversion designs – Superior system performance over cascode or stand-alone GaN FETs – Low inductance 8 mm × 8 mm QFN package for ease of design and la	TI 德州仪器	TI
LMG3410R150RWHR.A	LMG341xR150 600-V, 150-mΩ, GaN FET with Integrated Driver and Protection 1 Features 1• TI GaN process qualified through accelerated reliability in-application hard-switching profiles • Enables high-density power conversion designs – Superior system performance over cascode or stand-alone GaN FETs – Low inductance 8 mm × 8 mm QFN package for ease of design and la	TI 德州仪器	TI
LMG3410R150RWHR.B	LMG341xR150 600-V, 150-mΩ, GaN FET with Integrated Driver and Protection 1 Features 1• TI GaN process qualified through accelerated reliability in-application hard-switching profiles • Enables high-density power conversion designs – Superior system performance over cascode or stand-alone GaN FETs – Low inductance 8 mm × 8 mm QFN package for ease of design and la	TI 德州仪器	TI
LMG3410R150RWHT	LMG341xR150 600-V, 150-mΩ, GaN FET with Integrated Driver and Protection 1 Features 1• TI GaN process qualified through accelerated reliability in-application hard-switching profiles • Enables high-density power conversion designs – Superior system performance over cascode or stand-alone GaN FETs – Low inductance 8 mm × 8 mm QFN package for ease of design and la	TI 德州仪器	TI
LMG3410R150RWHT.A	LMG341xR150 600-V, 150-mΩ, GaN FET with Integrated Driver and Protection 1 Features 1• TI GaN process qualified through accelerated reliability in-application hard-switching profiles • Enables high-density power conversion designs – Superior system performance over cascode or stand-alone GaN FETs – Low inductance 8 mm × 8 mm QFN package for ease of design and la	TI 德州仪器	TI
LMG3410R150RWHT.B	LMG341xR150 600-V, 150-mΩ, GaN FET with Integrated Driver and Protection 1 Features 1• TI GaN process qualified through accelerated reliability in-application hard-switching profiles • Enables high-density power conversion designs – Superior system performance over cascode or stand-alone GaN FETs – Low inductance 8 mm × 8 mm QFN package for ease of design and la	TI 德州仪器	TI
LMG3410_17	600-V 12-A Single Channel GaN Power Stage 文件：636.02 Kbytes Page：29 Pages	TI 德州仪器	TI

LMG3410供应商更多...

更新时间：2025-12-29 14:47:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市高捷芯城科技有限公司	LMG3410R050RWHT	TI(德州仪器)	24+	QFN-32-EP(8x8)	1083	深耕行业12年,可提供技术支持。	询价
深圳市河锋鑫科技有限公司	LMG3410R070RWHT	TI(德州仪器)	2021+		8000	原装现货，欢迎询价	询价
深圳市明嘉莱科技有限公司	LMG3410R050RWHR	TEXAS INSTRUMENTS	25+	SMD	918000	明嘉莱只做原装正品现货	询价
深圳市联世界科技有限公司	LMG3410R070RWHT	TI(德州仪器)	24+/25+		10000	原装正品现货库存价优	询价
讯运(深圳/上海)电子有限公司	LMG3410R050RWHR	TI(德州仪器)	2021+	VQFN-32(8x8)	499		询价
深圳市昂芯微科技有限公司	LMG3410R150RWHR	TI	23+	N/A	560	原厂原装	询价
深圳市科恒伟业电子有限公司	LMG3410R070RWHT	TI(德州仪器)	2450+	SMD	9850	只做原装正品代理渠道!假一赔三!	询价
中天科工半导体（深圳）有限公司	LMG3410R070RWHR	TI/德州仪器	25+	VQFN32	15620	TI/德州仪器全新特价LMG3410R070RWHR即刻询购立享优惠#长期有货	询价
深圳市煦洪科技有限公司	LMG3410R150RWHR	TI/德州仪器	25+	原厂封装	10280	原厂授权代理,专注军工、汽车、医疗、工业、新能源！	询价
深圳市祥瑞智科技有限公司	LMG3410R070RWHT	TI	25+	VQFN (RWH)	6000	原厂原装,价格优势	询价

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