位置：首页 > IC中文资料 > LMG3410R070RWHT
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
LMG3410R070RWHT | LMG341xR070 600-V 70-mΩ GaN with Integrated Driver and Protection 1 Features 1• TI GaN Process Qualified Through Accelerated Reliability In-application Hard-switching Mission Profiles • Enables High Density Power Conversion Designs – Superior System Performance Over Cascode or Stand-alone GaN FETs – Low Inductance 8mm x 8mm QFN Package for Ease of Design | TI 德州仪器 |   | |
LMG3410R070RWHT | 600-V 70-m(ohm) GaN with Integrated Driver and Protection 文件：1.40304 Mbytes Page：32 Pages | TI 德州仪器 | | |
LMG3410R070RWHT | 600-V 70-m(ohm) GaN with Integrated Driver and Protection 文件：1.42382 Mbytes Page：33 Pages | TI 德州仪器 | | |
LMG3410R070RWHT | 封装/外壳：32-VQFN 裸露焊盘 包装：管件 描述：PWR MGMT MOSFET/PWR DRIVER 集成电路（IC） 配电开关，负载驱动器 | TI 德州仪器 | | |
LMG341xR070 600-V 70-mΩ GaN with Integrated Driver and Protection 1 Features 1• TI GaN Process Qualified Through Accelerated Reliability In-application Hard-switching Mission Profiles • Enables High Density Power Conversion Designs – Superior System Performance Over Cascode or Stand-alone GaN FETs – Low Inductance 8mm x 8mm QFN Package for Ease of Design | TI 德州仪器 | | ||
600-V 70-m(ohm) GaN with Integrated Driver and Protection 文件：1.42382 Mbytes Page：33 Pages | TI 德州仪器 | | ||
600-V 70-m(ohm) GaN with Integrated Driver and Protection 文件：1.40304 Mbytes Page：32 Pages | TI 德州仪器 | | ||
LMG341xR070 600-V 70-mΩ GaN with Integrated Driver and Protection 1 Features 1• TI GaN Process Qualified Through Accelerated Reliability In-application Hard-switching Mission Profiles • Enables High Density Power Conversion Designs – Superior System Performance Over Cascode or Stand-alone GaN FETs – Low Inductance 8mm x 8mm QFN Package for Ease of Design | TI 德州仪器 | | ||
LMG341xR070 600-V 70-mΩ GaN with Integrated Driver and Protection 1 Features 1• TI GaN Process Qualified Through Accelerated Reliability In-application Hard-switching Mission Profiles • Enables High Density Power Conversion Designs – Superior System Performance Over Cascode or Stand-alone GaN FETs – Low Inductance 8mm x 8mm QFN Package for Ease of Design | TI 德州仪器 | | ||
LMG341xR070 600-V 70-mΩ GaN with Integrated Driver and Protection 1 Features 1• TI GaN Process Qualified Through Accelerated Reliability In-application Hard-switching Mission Profiles • Enables High Density Power Conversion Designs – Superior System Performance Over Cascode or Stand-alone GaN FETs – Low Inductance 8mm x 8mm QFN Package for Ease of Design | TI 德州仪器 | | ||
LMG341xR070 600-V 70-mΩ GaN with Integrated Driver and Protection 1 Features 1• TI GaN Process Qualified Through Accelerated Reliability In-application Hard-switching Mission Profiles • Enables High Density Power Conversion Designs – Superior System Performance Over Cascode or Stand-alone GaN FETs – Low Inductance 8mm x 8mm QFN Package for Ease of Design | TI 德州仪器 | | ||
600-V 70-m(ohm) GaN with Integrated Driver and Protection 文件：1.40304 Mbytes Page：32 Pages | TI 德州仪器 | | ||
600-V 70-m(ohm) GaN with Integrated Driver and Protection 文件：1.42382 Mbytes Page：33 Pages | TI 德州仪器 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
TI(德州仪器) |
24+ |
QFN-32-EP(8x8) |
1083 |
深耕行业12年,可提供技术支持。 |
|||
TI/德州仪器 |
25+ |
32-VQFN |
65248 |
百分百原装现货 实单必成 |
|||
TI(德州仪器) |
2450+ |
SMD |
9850 |
只做原装正品代理渠道!假一赔三! |
|||
TI(德州仪器) |
24+/25+ |
10000 |
原装正品现货库存价优 |
||||
TI(德州仪器) |
24+ |
N/A |
6000 |
原厂原装，价格优势，欢迎洽谈！ |
|||
TI/德州仪器 |
2022+ |
VQFN-32 |
8000 |
只做原装，可提供样品 |
|||
Texas |
25+ |
25000 |
原厂原包 深圳现货 主打品牌 假一赔百 可开票! |
||||
TI(德州仪器) |
2511 |
N/A |
6000 |
电子元器件采购降本 30%!原厂直采,砍掉中间差价 |
|||
TI(德州仪器) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
|||
TI |
25+ |
VQFN (RWH) |
6000 |
原厂原装,价格优势 |
LMG3410R070RWHT规格书下载地址
LMG3410R070RWHT参数引脚图相关
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- LMG3410R070RWHTG4.B
- LMG3410R070RWHTG4.A
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DdatasheetPDF页码索引
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