位置：首页 > IC中文资料 > LMG3410R070RWHT
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
LMG3410R070RWHT | LMG341xR070 600-V 70-mΩ GaN with Integrated Driver and Protection 1 Features 1• TI GaN Process Qualified Through Accelerated Reliability In-application Hard-switching Mission Profiles • Enables High Density Power Conversion Designs – Superior System Performance Over Cascode or Stand-alone GaN FETs – Low Inductance 8mm x 8mm QFN Package for Ease of Design | TI 德州仪器 |   | |
LMG3410R070RWHT | LMG341xR070 600-V 70-mΩ GaN with Integrated Driver and Protection 1 Features 1• TI GaN Process Qualified Through Accelerated Reliability In-application Hard-switching Mission Profiles • Enables High Density Power Conversion Designs – Superior System Performance Over Cascode or Stand-alone GaN FETs – Low Inductance 8mm x 8mm QFN Package for Ease of Design | TI 德州仪器 | | |
LMG3410R070RWHT | 600-V 70-m(ohm) GaN with Integrated Driver and Protection 文件：1.42382 Mbytes Page：33 Pages | TI 德州仪器 | | |
LMG3410R070RWHT | 封装/外壳：32-VQFN 裸露焊盘 包装：管件 描述：PWR MGMT MOSFET/PWR DRIVER 集成电路（IC） 配电开关，负载驱动器 | TI 德州仪器 | | |
LMG3410R070RWHT | 600-V 70-m(ohm) GaN with Integrated Driver and Protection 文件：1.40304 Mbytes Page：32 Pages | TI 德州仪器 | | |
LMG341xR070 600-V 70-mΩ GaN with Integrated Driver and Protection 1 Features 1• TI GaN Process Qualified Through Accelerated Reliability In-application Hard-switching Mission Profiles • Enables High Density Power Conversion Designs – Superior System Performance Over Cascode or Stand-alone GaN FETs – Low Inductance 8mm x 8mm QFN Package for Ease of Design | TI 德州仪器 | | ||
LMG341xR070 600-V 70-mΩ GaN with Integrated Driver and Protection 1 Features 1• TI GaN Process Qualified Through Accelerated Reliability In-application Hard-switching Mission Profiles • Enables High Density Power Conversion Designs – Superior System Performance Over Cascode or Stand-alone GaN FETs – Low Inductance 8mm x 8mm QFN Package for Ease of Design | TI 德州仪器 | | ||
600-V 70-m(ohm) GaN with Integrated Driver and Protection 文件：1.42382 Mbytes Page：33 Pages | TI 德州仪器 | | ||
600-V 70-m(ohm) GaN with Integrated Driver and Protection 文件：1.40304 Mbytes Page：32 Pages | TI 德州仪器 | | ||
LMG341xR070 600-V 70-mΩ GaN with Integrated Driver and Protection 1 Features 1• TI GaN Process Qualified Through Accelerated Reliability In-application Hard-switching Mission Profiles • Enables High Density Power Conversion Designs – Superior System Performance Over Cascode or Stand-alone GaN FETs – Low Inductance 8mm x 8mm QFN Package for Ease of Design | TI 德州仪器 | | ||
LMG341xR070 600-V 70-mΩ GaN with Integrated Driver and Protection 1 Features 1• TI GaN Process Qualified Through Accelerated Reliability In-application Hard-switching Mission Profiles • Enables High Density Power Conversion Designs – Superior System Performance Over Cascode or Stand-alone GaN FETs – Low Inductance 8mm x 8mm QFN Package for Ease of Design | TI 德州仪器 | | ||
LMG341xR070 600-V 70-mΩ GaN with Integrated Driver and Protection 1 Features 1• TI GaN Process Qualified Through Accelerated Reliability In-application Hard-switching Mission Profiles • Enables High Density Power Conversion Designs – Superior System Performance Over Cascode or Stand-alone GaN FETs – Low Inductance 8mm x 8mm QFN Package for Ease of Design | TI 德州仪器 | | ||
LMG341xR070 600-V 70-mΩ GaN with Integrated Driver and Protection 1 Features 1• TI GaN Process Qualified Through Accelerated Reliability In-application Hard-switching Mission Profiles • Enables High Density Power Conversion Designs – Superior System Performance Over Cascode or Stand-alone GaN FETs – Low Inductance 8mm x 8mm QFN Package for Ease of Design | TI 德州仪器 | | ||
LMG341xR070 600-V 70-mΩ GaN with Integrated Driver and Protection 1 Features 1• TI GaN Process Qualified Through Accelerated Reliability In-application Hard-switching Mission Profiles • Enables High Density Power Conversion Designs – Superior System Performance Over Cascode or Stand-alone GaN FETs – Low Inductance 8mm x 8mm QFN Package for Ease of Design | TI 德州仪器 | | ||
LMG341xR070 600-V 70-mΩ GaN with Integrated Driver and Protection 1 Features 1• TI GaN Process Qualified Through Accelerated Reliability In-application Hard-switching Mission Profiles • Enables High Density Power Conversion Designs – Superior System Performance Over Cascode or Stand-alone GaN FETs – Low Inductance 8mm x 8mm QFN Package for Ease of Design | TI 德州仪器 | | ||
LMG341xR070 600-V 70-mΩ GaN with Integrated Driver and Protection 1 Features 1• TI GaN Process Qualified Through Accelerated Reliability In-application Hard-switching Mission Profiles • Enables High Density Power Conversion Designs – Superior System Performance Over Cascode or Stand-alone GaN FETs – Low Inductance 8mm x 8mm QFN Package for Ease of Design | TI 德州仪器 | | ||
LMG341xR070 600-V 70-mΩ GaN with Integrated Driver and Protection 1 Features 1• TI GaN Process Qualified Through Accelerated Reliability In-application Hard-switching Mission Profiles • Enables High Density Power Conversion Designs – Superior System Performance Over Cascode or Stand-alone GaN FETs – Low Inductance 8mm x 8mm QFN Package for Ease of Design | TI 德州仪器 | | ||
LMG341xR070 600-V 70-mΩ GaN with Integrated Driver and Protection 1 Features 1• TI GaN Process Qualified Through Accelerated Reliability In-application Hard-switching Mission Profiles • Enables High Density Power Conversion Designs – Superior System Performance Over Cascode or Stand-alone GaN FETs – Low Inductance 8mm x 8mm QFN Package for Ease of Design | TI 德州仪器 | | ||
600-V 70-m(ohm) GaN with Integrated Driver and Protection 文件：1.40304 Mbytes Page：32 Pages | TI 德州仪器 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
TI(德州仪器) |
25+ |
N/A |
6000 |
原装，请咨询 |
|||
TI/德州仪器 |
23+ |
VQFN-32 |
13000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
TI/德州仪器 |
23+ |
32-VQFN |
4256 |
原装正品代理渠道价格优势 |
|||
TI(德州仪器) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
|||
TI(德州仪器) |
2021+ |
8000 |
原装现货，欢迎询价 |
||||
TI/德州仪器 |
25+ |
SMD |
860000 |
明嘉莱只做原装正品现货 |
|||
TI(德州仪器) |
26+ |
N/A |
360000 |
只有原装 可配单 |
|||
TI(德州仪器) |
23+ |
N/A |
6000 |
公司只做原装，可来电咨询 |
|||
TI/德州仪器 |
2026+ |
32-VQFN |
65248 |
百分百原装现货 实单必成 |
|||
TI/德州仪器 |
2022+ |
VQFN-32 |
8000 |
只做原装，可提供样品 |
LMG3410R070RWHT芯片相关品牌
LMG3410R070RWHT规格书下载地址
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DdatasheetPDF页码索引
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