LMG341xR150 600-V, 150-mΩ, GaN FET with Integrated Driver and Protection

1 Features 1• TI GaN process qualified through accelerated reliability in-application hard-switching profiles • Enables high-density power conversion designs – Superior system performance over cascode or stand-alone GaN FETs – Low inductance 8 mm × 8 mm QFN package for ease of design and la

LMG341xR150 600-V, 150-mΩ, GaN FET with Integrated Driver and Protection

1 Features 1• TI GaN process qualified through accelerated reliability in-application hard-switching profiles • Enables high-density power conversion designs – Superior system performance over cascode or stand-alone GaN FETs – Low inductance 8 mm × 8 mm QFN package for ease of design and la

600-V 150-m廓 GaN With Integrated Driver And Protection

文件：786.3 Kbytes Page：28 Pages

LMG341xR150 600-V, 150-mΩ, GaN FET with Integrated Driver and Protection

1 Features 1• TI GaN process qualified through accelerated reliability in-application hard-switching profiles • Enables high-density power conversion designs – Superior system performance over cascode or stand-alone GaN FETs – Low inductance 8 mm × 8 mm QFN package for ease of design and la

LMG341xR150 600-V, 150-mΩ, GaN FET with Integrated Driver and Protection

1 Features 1• TI GaN process qualified through accelerated reliability in-application hard-switching profiles • Enables high-density power conversion designs – Superior system performance over cascode or stand-alone GaN FETs – Low inductance 8 mm × 8 mm QFN package for ease of design and la

600-V 150-m廓 GaN With Integrated Driver And Protection

文件：786.3 Kbytes Page：28 Pages