1 Features

1• TI GaN FET reliability qualified with in-application

hard-switching accelerated stress profiles

• Enables high density power conversion designs

– Superior system performance over cascode or

stand-alone GaN FETs

– Low inductance 8 mm x 8 mm QFN package

for ease of design, and layout

– Adjustable drive strength for switching

performance and EMI control

– Digital fault status output signal

– Only +12 V unregulated supply needed

• Integrated gate driver

– Zero common source inductance

– 20 ns Propagation delay for MHz operation

– Trimmed gate bias voltage to compensate for

threshold variations ensures reliable switching

– 25 to 100V/ns User adjustable slew rate

• Robust protection

– Requires no external protection components

– Overcurrent protection with less than 100 ns

response

– Greater than 150 V/ns Slew rate immunity

– Transient overvoltage immunity

– Overtemperature protection

– Under voltage lock out (UVLO) Protection on

all supply rails

• Robust protection

– LMG3410R050: Latched overcurrent

protection

– LMG3411R050: Cycle-by-cycle overcurrent

protection

2 Applications

• High density industrial and consumer power

supplies

• Multi-level converters

• Solar inverters

• Industrial motor drives

• Uninterruptable power supplies

• High voltage battery chargers

3 Description

The LMG341xR050 GaN power stage with integrated

driver and protection enables designers to achieve

new levels of power density and efficiency in power

electronics systems. The LMG341x’s inherent

advantages over silicon MOSFETs include ultra-low

input and output capacitance, zero reverse recovery

to reduce switching losses by as much as 80%, and

low switch node ringing to reduce EMI. These

advantages enable dense and efficient topologies like

the totem-pole PFC.

The LMG341xR050 provides a smart alternative to

traditional cascode GaN and standalone GaN FETs

by integrating a unique set of features to simplify

design, maximize reliability and optimize the

performance of any power supply. Integrated gate

drive enables 100 V/ns switching with near zero Vds

ringing, less than 100 ns current limiting response

self-protects against unintended shoot-through

events, overtemperature shutdown prevents thermal

runaway, and system interface signals provide selfmonitoring

capability.