LMG341xR150 600-V, 150-mΩ, GaN FET with Integrated Driver and Protection

1 Features 1• TI GaN process qualified through accelerated reliability in-application hard-switching profiles • Enables high-density power conversion designs – Superior system performance over cascode or stand-alone GaN FETs – Low inductance 8 mm × 8 mm QFN package for ease of design and la

600-V 150-m廓 GaN With Integrated Driver And Protection

文件：786.3 Kbytes Page：28 Pages

封装/外壳：32-VQFN 裸露焊盘 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：SMART 150MOHM GAN FET WITH DRIVE 集成电路（IC） 配电开关，负载驱动器

LMG341xR150 600-V, 150-mΩ, GaN FET with Integrated Driver and Protection

1 Features 1• TI GaN process qualified through accelerated reliability in-application hard-switching profiles • Enables high-density power conversion designs – Superior system performance over cascode or stand-alone GaN FETs – Low inductance 8 mm × 8 mm QFN package for ease of design and la

600-V 150-m廓 GaN With Integrated Driver And Protection

文件：786.3 Kbytes Page：28 Pages

LMG341xR150 600-V, 150-mΩ, GaN FET with Integrated Driver and Protection

1 Features 1• TI GaN process qualified through accelerated reliability in-application hard-switching profiles • Enables high-density power conversion designs – Superior system performance over cascode or stand-alone GaN FETs – Low inductance 8 mm × 8 mm QFN package for ease of design and la

LMG341xR150 600-V, 150-mΩ, GaN FET with Integrated Driver and Protection

1 Features 1• TI GaN process qualified through accelerated reliability in-application hard-switching profiles • Enables high-density power conversion designs – Superior system performance over cascode or stand-alone GaN FETs – Low inductance 8 mm × 8 mm QFN package for ease of design and la

LMG341xR150 600-V, 150-mΩ, GaN FET with Integrated Driver and Protection

1 Features 1• TI GaN process qualified through accelerated reliability in-application hard-switching profiles • Enables high-density power conversion designs – Superior system performance over cascode or stand-alone GaN FETs – Low inductance 8 mm × 8 mm QFN package for ease of design and la

LMG341xR150 600-V, 150-mΩ, GaN FET with Integrated Driver and Protection

1 Features 1• TI GaN process qualified through accelerated reliability in-application hard-switching profiles • Enables high-density power conversion designs – Superior system performance over cascode or stand-alone GaN FETs – Low inductance 8 mm × 8 mm QFN package for ease of design and la

600-V 150-m廓 GaN With Integrated Driver And Protection

文件：786.3 Kbytes Page：28 Pages