LMG341xR050 600-V 50-mΩ Integrated GaN Fet Power Stage With Overcurrent Protection

1 Features 1• TI GaN FET reliability qualified with in-application hard-switching accelerated stress profiles • Enables high density power conversion designs – Superior system performance over cascode or stand-alone GaN FETs – Low inductance 8 mm x 8 mm QFN package for ease of design, and l

LMG341xR050 600-V 50-mΩ Integrated GaN Fet Power Stage With Overcurrent Protection

1 Features 1• TI GaN FET reliability qualified with in-application hard-switching accelerated stress profiles • Enables high density power conversion designs – Superior system performance over cascode or stand-alone GaN FETs – Low inductance 8 mm x 8 mm QFN package for ease of design, and l

LMG341xR050 600-V 50-mΩ Integrated GaN Fet Power Stage With Overcurrent Protection

1 Features 1• TI GaN FET reliability qualified with in-application hard-switching accelerated stress profiles • Enables high density power conversion designs – Superior system performance over cascode or stand-alone GaN FETs – Low inductance 8 mm x 8 mm QFN package for ease of design, and l

封装/外壳：32-VQFN 裸露焊盘 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：SMART 50MOHM GAN FET WITH DRIV 集成电路（IC） 配电开关，负载驱动器

600-V 50-m(ohm) Integrated GaN Power Stage With Overcurrent Protection

文件：910.4 Kbytes Page：27 Pages

600-V 50-m(ohm) Integrated GaN power stage with overcurrent protection

文件：923.22 Kbytes Page：28 Pages

LMG341xR050 600-V 50-mΩ Integrated GaN Fet Power Stage With Overcurrent Protection

1 Features 1• TI GaN FET reliability qualified with in-application hard-switching accelerated stress profiles • Enables high density power conversion designs – Superior system performance over cascode or stand-alone GaN FETs – Low inductance 8 mm x 8 mm QFN package for ease of design, and l

LMG341xR050 600-V 50-mΩ Integrated GaN Fet Power Stage With Overcurrent Protection

1 Features 1• TI GaN FET reliability qualified with in-application hard-switching accelerated stress profiles • Enables high density power conversion designs – Superior system performance over cascode or stand-alone GaN FETs – Low inductance 8 mm x 8 mm QFN package for ease of design, and l

LMG341xR050 600-V 50-mΩ Integrated GaN Fet Power Stage With Overcurrent Protection

1 Features 1• TI GaN FET reliability qualified with in-application hard-switching accelerated stress profiles • Enables high density power conversion designs – Superior system performance over cascode or stand-alone GaN FETs – Low inductance 8 mm x 8 mm QFN package for ease of design, and l

600-V 50-m(ohm) Integrated GaN power stage with overcurrent protection

文件：923.22 Kbytes Page：28 Pages

600-V 50-m(ohm) Integrated GaN Power Stage With Overcurrent Protection

文件：910.4 Kbytes Page：27 Pages

LMG341xR050 600-V 50-mΩ Integrated GaN Fet Power Stage With Overcurrent Protection

1 Features 1• TI GaN FET reliability qualified with in-application hard-switching accelerated stress profiles • Enables high density power conversion designs – Superior system performance over cascode or stand-alone GaN FETs – Low inductance 8 mm x 8 mm QFN package for ease of design, and l

LMG341xR050 600-V 50-mΩ Integrated GaN Fet Power Stage With Overcurrent Protection

1 Features 1• TI GaN FET reliability qualified with in-application hard-switching accelerated stress profiles • Enables high density power conversion designs – Superior system performance over cascode or stand-alone GaN FETs – Low inductance 8 mm x 8 mm QFN package for ease of design, and l

LMG341xR050 600-V 50-mΩ Integrated GaN Fet Power Stage With Overcurrent Protection

1 Features 1• TI GaN FET reliability qualified with in-application hard-switching accelerated stress profiles • Enables high density power conversion designs – Superior system performance over cascode or stand-alone GaN FETs – Low inductance 8 mm x 8 mm QFN package for ease of design, and l

LMG341xR050 600-V 50-mΩ Integrated GaN Fet Power Stage With Overcurrent Protection

1 Features 1• TI GaN FET reliability qualified with in-application hard-switching accelerated stress profiles • Enables high density power conversion designs – Superior system performance over cascode or stand-alone GaN FETs – Low inductance 8 mm x 8 mm QFN package for ease of design, and l

LMG341xR050 600-V 50-mΩ Integrated GaN Fet Power Stage With Overcurrent Protection

1 Features 1• TI GaN FET reliability qualified with in-application hard-switching accelerated stress profiles • Enables high density power conversion designs – Superior system performance over cascode or stand-alone GaN FETs – Low inductance 8 mm x 8 mm QFN package for ease of design, and l

LMG341xR050 600-V 50-mΩ Integrated GaN Fet Power Stage With Overcurrent Protection

1 Features 1• TI GaN FET reliability qualified with in-application hard-switching accelerated stress profiles • Enables high density power conversion designs – Superior system performance over cascode or stand-alone GaN FETs – Low inductance 8 mm x 8 mm QFN package for ease of design, and l

LMG341xR050 600-V 50-mΩ Integrated GaN Fet Power Stage With Overcurrent Protection

1 Features 1• TI GaN FET reliability qualified with in-application hard-switching accelerated stress profiles • Enables high density power conversion designs – Superior system performance over cascode or stand-alone GaN FETs – Low inductance 8 mm x 8 mm QFN package for ease of design, and l

LMG341xR050 600-V 50-mΩ Integrated GaN Fet Power Stage With Overcurrent Protection

1 Features 1• TI GaN FET reliability qualified with in-application hard-switching accelerated stress profiles • Enables high density power conversion designs – Superior system performance over cascode or stand-alone GaN FETs – Low inductance 8 mm x 8 mm QFN package for ease of design, and l

LMG341xR050 600-V 50-mΩ Integrated GaN Fet Power Stage With Overcurrent Protection

1 Features 1• TI GaN FET reliability qualified with in-application hard-switching accelerated stress profiles • Enables high density power conversion designs – Superior system performance over cascode or stand-alone GaN FETs – Low inductance 8 mm x 8 mm QFN package for ease of design, and l

LMG341xR050 600-V 50-mΩ Integrated GaN Fet Power Stage With Overcurrent Protection

1 Features 1• TI GaN FET reliability qualified with in-application hard-switching accelerated stress profiles • Enables high density power conversion designs – Superior system performance over cascode or stand-alone GaN FETs – Low inductance 8 mm x 8 mm QFN package for ease of design, and l

LMG341xR050 600-V 50-mΩ Integrated GaN Fet Power Stage With Overcurrent Protection

1 Features 1• TI GaN FET reliability qualified with in-application hard-switching accelerated stress profiles • Enables high density power conversion designs – Superior system performance over cascode or stand-alone GaN FETs – Low inductance 8 mm x 8 mm QFN package for ease of design, and l

LMG341xR050 600-V 50-mΩ Integrated GaN Fet Power Stage With Overcurrent Protection

1 Features 1• TI GaN FET reliability qualified with in-application hard-switching accelerated stress profiles • Enables high density power conversion designs – Superior system performance over cascode or stand-alone GaN FETs – Low inductance 8 mm x 8 mm QFN package for ease of design, and l

LMG341xR050 600-V 50-mΩ Integrated GaN Fet Power Stage With Overcurrent Protection

1 Features 1• TI GaN FET reliability qualified with in-application hard-switching accelerated stress profiles • Enables high density power conversion designs – Superior system performance over cascode or stand-alone GaN FETs – Low inductance 8 mm x 8 mm QFN package for ease of design, and l