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L638价格
参考价格：￥10.3326
型号：L6382D 品牌：STMICROELECTRONICS 备注：这里有L638多少钱，2025年最近7天走势，今日出价，今日竞价，L638批发/采购报价，L638行情走势销售排行榜，L638报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
Powermanagementunitformicrocontrolledballast Description TheL6382DdeviceissuitableforLEDdriversembeddingaPFCstageandahalf-bridgestage.TheL6382Dincludes4MOSFETdrivingstages(forthePFC,forthehalf-bridge,andfortheauxiliaryMOSFET)plusapowermanagementunit(PMU)featuringalsoareferenceabletosupplythemi | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 |  |   | |
Powermanagementunitformicrocontrolledballast Description TheL6382D5issuitableformicrocontrolledelectronicballastsembeddingaPFCstageandahalf-bridgestage.TheL6382D5includes4MOSFETdrivingstages(forthePFC,forthehalfbridge,forthepreheatingMOSFET)plusapowermanagementunit(PMU)featuringalsoareferenceable | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
Powermanagementunitformicrocontrolledballast Description TheL6382D5issuitableformicrocontrolledelectronicballastsembeddingaPFCstageandahalf-bridgestage.TheL6382D5includes4MOSFETdrivingstages(forthePFC,forthehalfbridge,forthepreheatingMOSFET)plusapowermanagementunit(PMU)featuringalsoareferenceable | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
Powermanagementunitformicrocontrolledballast Description TheL6382DdeviceissuitableforLEDdriversembeddingaPFCstageandahalf-bridgestage.TheL6382Dincludes4MOSFETdrivingstages(forthePFC,forthehalf-bridge,andfortheauxiliaryMOSFET)plusapowermanagementunit(PMU)featuringalsoareferenceabletosupplythemi | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
HIGH-VOLTAGEHALFBRIDGEDRIVER DESCRIPTION TheL6384isanhigh-voltagedevice,manufacturedwiththeBCDOFF-LINEtechnology.IthasanHalf-BridgeDriverstructurethatenablestodriveNChannelPowerMOSorIGBT.TheUpper(Floating)SectionisenabledtoworkwithvoltageRailupto600V.TheLogicInputsareCMOS/TTLco | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
HIGH-VOLTAGEHALFBRIDGEDRIVER DESCRIPTION TheL6384isanhigh-voltagedevice,manufacturedwiththeBCDOFF-LINEtechnology.IthasanHalf-BridgeDriverstructurethatenablestodriveNChannelPowerMOSorIGBT.TheUpper(Floating)SectionisenabledtoworkwithvoltageRailupto600V.TheLogicInputsareCMOS/TTLco | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
High-voltagehalfbridgedriver Description TheL6384Eisanhigh-voltagedevice,manufacturedwiththeBCDOFF-LINEtechnology.IthasanHalf-BridgeDriverstructurethatenablestodriveN-channelPowerMOSorIGBT.TheHighSide(Floating)SectionisenabledtoworkwithvoltageRailupto600V.TheLogicInputsareCMOS | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
High-voltagehalfbridgedriver Description TheL6384Eisanhigh-voltagedevice,manufacturedwiththeBCDOFF-LINEtechnology.IthasanHalf-BridgeDriverstructurethatenablestodriveN-channelPowerMOSorIGBT.TheHighSide(Floating)SectionisenabledtoworkwithvoltageRailupto600V.TheLogicInputsareCMOS | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
High-voltagehalfbridgedriver Description TheL6384Eisanhigh-voltagedevice,manufacturedwiththeBCDOFF-LINEtechnology.IthasanHalf-BridgeDriverstructurethatenablestodriveN-channelPowerMOSorIGBT.TheHighSide(Floating)SectionisenabledtoworkwithvoltageRailupto600V.TheLogicInputsareCMOS | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
HIGH-VOLTAGEHIGHANDLOWSIDEDRIVER DESCRIPTION TheL6385isanhigh-voltagedevice,manufacturedwiththeBCDOFF-LINEtechnology.IthasaDriverstructurethatenablestodriveindependentreferencedNChannelPowerMOSorIGBT.TheUpper(Floating)SectionisenabledtoworkwithvoltageRailupto600V.TheLogicInputsareCM | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
HIGH-VOLTAGEHIGHANDLOWSIDEDRIVER DESCRIPTION TheL6385isanhigh-voltagedevice,manufacturedwiththeBCDOFF-LINEtechnology.IthasaDriverstructurethatenablestodriveindependentreferencedNChannelPowerMOSorIGBT.TheUpper(Floating)SectionisenabledtoworkwithvoltageRailupto600V.TheLogicInputsareCM | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
High-voltagehighandlowsidedriver Description TheL6385Eisanhigh-voltagedevice,manufacturedwiththeBCDOFF-LINEtechnology.IthasanHalf-BridgeDriverstructurethatenablestodriveindependentreferencedNChannelPowerMOSorIGBT.TheHighSide(Floating)SectionisenabledtoworkwithvoltageRailupto600V.Th | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
High-voltagehighandlowsidedriver Description TheL6385Eisanhigh-voltagedevice,manufacturedwiththeBCDOFF-LINEtechnology.IthasanHalf-BridgeDriverstructurethatenablestodriveindependentreferencedNChannelPowerMOSorIGBT.TheHighSide(Floating)SectionisenabledtoworkwithvoltageRailupto600V.Th | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
High-voltagehighandlowsidedriver Description TheL6385Eisanhigh-voltagedevice,manufacturedwiththeBCDOFF-LINEtechnology.IthasanHalf-BridgeDriverstructurethatenablestodriveindependentreferencedNChannelPowerMOSorIGBT.TheHighSide(Floating)SectionisenabledtoworkwithvoltageRailupto600V.Th | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
High-voltagehighandlowsidedriver Description TheL6385Eisanhigh-voltagedevice,manufacturedwiththeBCDOFF-LINEtechnology.IthasanHalf-BridgeDriverstructurethatenablestodriveindependentreferencedNChannelPowerMOSorIGBT.TheHighSide(Floating)SectionisenabledtoworkwithvoltageRailupto600V.Th | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
High-voltagehighandlowsidedriver Description TheL6385Eisanhigh-voltagedevice,manufacturedwiththeBCDOFF-LINEtechnology.IthasanHalf-BridgeDriverstructurethatenablestodriveindependentreferencedNChannelPowerMOSorIGBT.TheHighSide(Floating)SectionisenabledtoworkwithvoltageRailupto600V.Th | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
High-voltagehighandlowsidedriver Description TheL6385Eisanhigh-voltagedevice,manufacturedwiththeBCDOFF-LINEtechnology.IthasanHalf-BridgeDriverstructurethatenablestodriveindependentreferencedNChannelPowerMOSorIGBT.TheHighSide(Floating)SectionisenabledtoworkwithvoltageRailupto600V.Th | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
HIGH-VOLTAGEHIGHANDLOWSIDEDRIVER DESCRIPTION TheL6386isanhigh-voltagedevice,manufacturedwiththeBCD”OFF-LINE”technology.IthasaDriverstructurethatenablestodriveindependentreferencedChannelPowerMOSorIGBT.TheUpper(Floating)SectionisenabledtoworkwithvoltageRailupto600V.TheLogicInputsareCM | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
High-voltagehighandlowsidedriver Description TheL6386ADisanhigh-voltagedevice,manufacturedwiththeBCDOFF-LINEtechnology.IthasadriverstructurethatenablestodriveindependentreferencedChannelPowerMOSorIGBT.Thehigh-side(floating)sectionisenabledtoworkwithvoltagerailupto600V.TheLogicInputs | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
High-voltagehighandlowsidedriver Description TheL6386ADisanhigh-voltagedevice,manufacturedwiththeBCDOFF-LINEtechnology.IthasadriverstructurethatenablestodriveindependentreferencedChannelPowerMOSorIGBT.Thehigh-side(floating)sectionisenabledtoworkwithvoltagerailupto600V.TheLogicInputs | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
HIGH-VOLTAGEHIGHANDLOWSIDEDRIVER DESCRIPTION TheL6386isanhigh-voltagedevice,manufacturedwiththeBCD”OFF-LINE”technology.IthasaDriverstructurethatenablestodriveindependentreferencedChannelPowerMOSorIGBT.TheUpper(Floating)SectionisenabledtoworkwithvoltageRailupto600V.TheLogicInputsareCM | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
High-voltagehighandlowsidedriver Description TheL6386Eisanhigh-voltagedevice,manufacturedwiththeBCDOFF-LINEtechnology.IthasaDriverstructurethatenablestodriveindependentreferencedChannelPowerMOSorIGBT.TheHighSide(Floating)SectionisenabledtoworkwithvoltageRailupto600V.TheLogicInputsa | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
High-voltagehighandlowsidedriver Description TheL6386Eisanhigh-voltagedevice,manufacturedwiththeBCDOFF-LINEtechnology.IthasaDriverstructurethatenablestodriveindependentreferencedChannelPowerMOSorIGBT.TheHighSide(Floating)SectionisenabledtoworkwithvoltageRailupto600V.TheLogicInputsa | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
High-voltagehighandlowsidedriver Description TheL6386Eisanhigh-voltagedevice,manufacturedwiththeBCDOFF-LINEtechnology.IthasaDriverstructurethatenablestodriveindependentreferencedChannelPowerMOSorIGBT.TheHighSide(Floating)SectionisenabledtoworkwithvoltageRailupto600V.TheLogicInputsa | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
HIGH-VOLTAGEHIGHANDLOWSIDEDRIVER DESCRIPTION TheL6387isanhigh-voltagedevice,manufacturedwiththeBCDOFF-LINEtechnology.IthasaDriverstructurethatenablestodriveindependentreferencedNChannelPowerMOSorIGBT.TheUpper(Floating)SectionisenabledtoworkwithvoltageRailupto600V.TheLogicInputsareC | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
HIGH-VOLTAGEHIGHANDLOWSIDEDRIVER HIGHVOLTAGERAILUPTO600V dV/dtIMMUNITY+-50V/nsecINFULLTEMPERATURERANGE DRIVERCURRENTCAPABILITY: 400mASOURCE, 650mASINK SWITCHINGTIMES50/30nsecRISE/FALL WITH1nFLOAD CMOS/TTLSCHMITTTRIGGERINPUTS WITHHYSTERESISANDPULLDOWN INTERNALBOOTSTRAPDIODE OUTPUTSINP | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
HIGH-VOLTAGEHIGHANDLOWSIDEDRIVER DESCRIPTION TheL6387isanhigh-voltagedevice,manufacturedwiththeBCDOFF-LINEtechnology.IthasaDriverstructurethatenablestodriveindependentreferencedNChannelPowerMOSorIGBT.TheUpper(Floating)SectionisenabledtoworkwithvoltageRailupto600V.TheLogicInputsareC | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
HIGH-VOLTAGEHIGHANDLOWSIDEDRIVER HIGHVOLTAGERAILUPTO600V dV/dtIMMUNITY+-50V/nsecINFULLTEMPERATURERANGE DRIVERCURRENTCAPABILITY: 400mASOURCE, 650mASINK SWITCHINGTIMES50/30nsecRISE/FALL WITH1nFLOAD CMOS/TTLSCHMITTTRIGGERINPUTS WITHHYSTERESISANDPULLDOWN INTERNALBOOTSTRAPDIODE OUTPUTSINP | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
High-voltagehighandlowsidedriver Description TheL6387Eisanhigh-voltagedevice,manufacturedwiththeBCDOFF-LINEtechnology.IthasaDriverstructurethatenablestodriveindependentreferencedNChannelPowerMOSorIGBT.Thehighside(Floating)SectionisenabledtoworkwithvoltageRailupto600V.TheLogicInputs | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
High-voltagehighandlowsidedriver Description TheL6387Eisanhigh-voltagedevice,manufacturedwiththeBCDOFF-LINEtechnology.IthasaDriverstructurethatenablestodriveindependentreferencedNChannelPowerMOSorIGBT.Thehighside(Floating)SectionisenabledtoworkwithvoltageRailupto600V.TheLogicInputs | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
High-voltagehighandlowsidedriver Description TheL6387Eisanhigh-voltagedevice,manufacturedwiththeBCDOFF-LINEtechnology.IthasaDriverstructurethatenablestodriveindependentreferencedNChannelPowerMOSorIGBT.Thehighside(Floating)SectionisenabledtoworkwithvoltageRailupto600V.TheLogicInputs | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
HIGH-VOLTAGEHIGHANDLOWSIDEDRIVER DESCRIPTION TheL6388isanhigh-voltagedevice,manufacturedwiththeBCDOFF-LINEtechnology.IthasaDriverstructurethatenablestodriveindependentreferencedNChannelPowerMOSorIGBT.TheUpper(Floating)SectionisenabledtoworkwithvoltageRailupto600V.TheLogicInputsareC | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
HIGH-VOLTAGEHIGHANDLOWSIDEDRIVER DESCRIPTION TheL6388isanhigh-voltagedevice,manufacturedwiththeBCDOFF-LINEtechnology.IthasaDriverstructurethatenablestodriveindependentreferencedNChannelPowerMOSorIGBT.TheUpper(Floating)SectionisenabledtoworkwithvoltageRailupto600V.TheLogicInputsareC | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
HIGH-VOLTAGEHIGHANDLOWSIDEDRIVER DESCRIPTION TheL6388isanhigh-voltagedevice,manufacturedwiththeBCDOFF-LINEtechnology.IthasaDriverstructurethatenablestodriveindependentreferencedNChannelPowerMOSorIGBT.TheUpper(Floating)SectionisenabledtoworkwithvoltageRailupto600V.TheLogicInputsareC | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
High-voltagehighandlowsidedriver Description TheL6388Eisanhigh-voltagedevice,manufacturedwiththeBCDOFF-LINEtechnology. IthasaDriverstructurethatenablestodriveindependentreferencedNChannelPowerMOSorIGBT.TheHighSide(Floating)SectionisenabledtoworkwithvoltageRailupto600V. TheLogicInputsa | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
High-voltagehighandlowsidedriver Description TheL6388Eisanhigh-voltagedevice,manufacturedwiththeBCDOFF-LINEtechnology. IthasaDriverstructurethatenablestodriveindependentreferencedNChannelPowerMOSorIGBT.TheHighSide(Floating)SectionisenabledtoworkwithvoltageRailupto600V. TheLogicInputsa | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
High-voltagehighandlowsidedriver Description TheL6388Eisanhigh-voltagedevice,manufacturedwiththeBCDOFF-LINEtechnology. IthasaDriverstructurethatenablestodriveindependentreferencedNChannelPowerMOSorIGBT.TheHighSide(Floating)SectionisenabledtoworkwithvoltageRailupto600V. TheLogicInputsa | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
Highvoltagehighandlow-sidedriver Features Highvoltagerailupto600V dV/dtimmunity±50V/nsecinfulltemperature range Drivercurrentcapability: –400mAsource –650mAsink Switchingtimes70/40nsecrise/fallwith1nF load 3.3V,5V,15VCMOS/TTLinputcomparators withhysteresisandpull-down | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
Highvoltagehighandlow-sidedriver Features Highvoltagerailupto600V dV/dtimmunity±50V/nsecinfulltemperature range Drivercurrentcapability: –400mAsource –650mAsink Switchingtimes70/40nsecrise/fallwith1nF load 3.3V,5V,15VCMOS/TTLinputcomparators withhysteresisandpull-down | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
Highvoltagehighandlow-sidedriver Features Highvoltagerailupto600V dV/dtimmunity±50V/nsecinfulltemperature range Drivercurrentcapability: –400mAsource –650mAsink Switchingtimes70/40nsecrise/fallwith1nF load 3.3V,5V,15VCMOS/TTLinputcomparators withhysteresisandpull-down | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
包装：散装 描述：SERVO DRIVER 144VDC 电机，电磁阀，螺线管，驱动器板/模块 电机驱动器板，模块 | ETC 知名厂家 | ETC | | |
封装/外壳：20-SOIC（0.295"，7.50mm 宽） 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC PFC/BALLAST CNTRL 20SO 集成电路（IC） 照明，镇流器控制器 | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
Powermanagementunitformicrocontrolledballast 文件：297.29 Kbytes Page：22 Pages | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
Powermanagementunitformicrocontrolledballast 文件：297.29 Kbytes Page：22 Pages | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
Powermanagementunitformicrocontrolledballast 文件：297.29 Kbytes Page：22 Pages | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
HIGH-VOLTAGEHALFBRIDGEDRIVER 文件：153.6 Kbytes Page：10 Pages | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
HIGH-VOLTAGEHALFBRIDGEDRIVER 文件：153.6 Kbytes Page：10 Pages | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
Highvoltagehighandlow-sidedriver 文件：293.14 Kbytes Page：15 Pages | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
Highvoltagehighandlow-sidedriver 文件：293.14 Kbytes Page：15 Pages | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
Highvoltagehighandlow-sidedriver 文件：293.14 Kbytes Page：15 Pages | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
High-voltagehighandlowsidedriver 文件：206.26 Kbytes Page：19 Pages | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
AccessControl,16c(#18-3pr,#16-4c,#18-6c),Shielded,OuterJacket,CMP ProductDescription AccessControlCable,Plenum-CMP,3-18AWGpairs,4-16AWGconductors,4-18AWGconductors,2-18AWGconductors,Allconductorsstrandedbare copperwithFlamarrest®insulation,EachcablehasoverallBeldfoil®shieldandFlamarrest®jackets,OverallFlamarrest®jacket | BELDENBelden Inc. 百通电缆设计科技有限公司 |  | | |
AccessControl,16c(#18-3pr,#16-4c,#18-6c),Shielded,BananaPeel®,CMP ProductDescription AccessControlCable,Plenum-CMP,3-18AWGpairs,4-16AWGconductors,4-18AWGconductors,2-18AWGconductors,Allconductorsstrandedbare copperwithFlamarrest®insulation,EachcablehasoverallBeldfoil®shieldandFlamarrest®jacket,BananaPeel®Nooveralljacket | BELDENBelden Inc. 百通电缆设计科技有限公司 | | | |
AccessControl,16c(#18-3pr,#16-4c,#18-6c),OnlyCardReaderPairsShielded,OuterJacket,CMP ProductDescription AccessControlCable,Plenum-CMP,3-18AWGpairs,4-16AWGconductors,4-18AWGconductors,2-18AWGconductors,Allconductorsstrandedbare copperwithFlamarrest®insulation,OnlyCardReaderpairshaveoverallBeldfoil®shieldandFlamarrest®jackets,OverallFlamarrest® | BELDENBelden Inc. 百通电缆设计科技有限公司 | | | |
AccessControl,16c(#18-3pr,#16-4c,#18-6c),OnlyCardReaderPairsShielded,BananaPeel®,CMP ProductDescription AccessControlCable,Plenum-CMP,3-18AWGpairs,4-16AWGconductors,4-18AWGconductors,2-18AWGconductors,Allconductorsstrandedbare copperwithFlamarrest®insulation,OnlyCardReaderpairshaveoverallBeldfoil®shieldandFlamarrest®jackets,BananaPeel®Noover | BELDENBelden Inc. 百通电缆设计科技有限公司 | | | |
SurfaceMountable 文件：135.67 Kbytes Page：2 Pages | OSCILENT Oscilent Corporation |  | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST |
24+ |
SOP8 |
2500 |
只做原装 有挂有货 假一赔十 |
|||
ST/意法 |
23+ |
SOP8 |
8215 |
原厂原装 |
|||
ST(意法) |
24+ |
SO-8_3.9mm |
12248 |
原厂可订货,技术支持,直接渠道。可签保供合同 |
|||
ST(意法) |
25+ |
5000 |
只做原装 假一罚百 可开票 可售样 |
||||
JRC |
22+ |
DIP8 |
100493 |
原装正品现货,可开13点税 |
|||
ST/意法 |
25+ |
SOP8 |
12496 |
ST/意法原装正品L6387ED013TR即刻询购立享优惠#长期有货 |
|||
ST/意法半导体 |
25+ |
原厂封装 |
10280 |
原厂授权代理,专注军工、汽车、医疗、工业、新能源！ |
|||
ST(意法) |
23+ |
SO-8_3.9mm |
10000 |
只做全新原装,实单来 |
|||
ST |
22+ |
DIP |
5000 |
原装现货库存.价格优势!! |
|||
ST |
23+ |
8-DIP |
65600 |
L638芯片相关品牌
L638规格书下载地址
L638参数引脚图相关
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- LED背光源
- LED
- LDO
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- laser
- l9110
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- L6387ED013TR
- L6387ED
- L6387E
- L6387DTR
- L6387D
- L6387
- L6386ED013TR
- L6386ED
- L6386E
- L6386D
- L6386ADTR
- L6386AD
- L6386
- L6385ED013TR
- L6385ED
- L6385E
- L6385D
- L6385
- L6384ED013TR
- L6384ED
- L6384E
- L6384D
- L6384
- L6382DTR
- L6382D5
- L6382D
- L6377D
- L6377
- L6376PD
- L6376D013TR
- L6376D
- L6376
- L6375STR
- L6375S
- L6375D
- L6375
- L6374FP013TR
- L6374FP
- L6374DP
- L6374
- L6370QTR
- L6370Q
- L6370L
- L6370D
- L6370
- L6363
- L6362A
- L6362
- L6360TR
- L6360
- L6353D
- L632DY
- L632DR
- L631DR
- L6235QTR
- L6235Q
- L6235PD013TR
- L6235PD
- L6235N
L638数据表相关新闻
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进口代理
2023-7-20L6353-智能驱动的功率MOS和IGBT的
描述该L6353设备是智能驱动，所有的驱动和保护知识“已装船“。在这两个DIP和SO封装，可触发的逻辑电平或从一个信号optocoupleror脉冲变压器。它过滤寄生输入信号和驱动器的任何MOSor的IGBT。特点峰高输出电流能力(+8A)宽电源电压范围（12.5至18V的）0至-7.5V的负偏压电源范围过电流和饱和度下降保护的外部电源设备（外部可编程）闭锁保护（IGBT）的两步开启（可编程）正电源防护欠压使用光耦器兼容输入
2013-2-28L6370-2.5A的高边驱动器工业智能功率开关
L6370是一款单片智能功率BCD技术在移动电站开关，驾驶感性或阻性负载。一个内部钳位二极管可以归纳快速退磁负载。CPU的反馈和广泛的诊断使用电器的保护，使该器件非常坚固耐用，特别适合工业自动化应用。特点*2.5A输出电流*9.5V至35V电源VOLTAGERANGE*内部电流限制*热关断*空地保护*内部负电压钳位，以VS-50V快速退磁*与大共模范围和阈值迟滞差分输入*UNDERVOLTAGELOCKOUTWITHHYSTERESI
2012-11-13
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