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L638价格

参考价格：￥10.3326

型号：L6382D 品牌：STMICROELECTRONICS 备注：这里有L638多少钱，2025年最近7天走势，今日出价，今日竞价，L638批发/采购报价，L638行情走势销售排行榜，L638报价。

型号	功能描述	生产厂家企业	LOGO
L6382D	Power management unit for microcontrolled ballast Description The L6382D device is suitable for LED drivers embedding a PFC stage and a half-bridge stage. The L6382D includes 4 MOSFET driving stages (for the PFC, for the half-bridge, and for the auxiliary MOSFET) plus a power management unit (PMU) featuring also a reference able to supply the mi	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
L6382D5	Power management unit for microcontrolled ballast Description The L6382D5 is suitable for microcontrolled electronic ballasts embedding a PFC stage and a half-bridge stage. The L6382D5 includes 4 MOSFET driving stages (for the PFC, for the half bridge, for the preheating MOSFET) plus a power management unit (PMU) featuring also a reference able	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
L6382D5TR	Power management unit for microcontrolled ballast Description The L6382D5 is suitable for microcontrolled electronic ballasts embedding a PFC stage and a half-bridge stage. The L6382D5 includes 4 MOSFET driving stages (for the PFC, for the half bridge, for the preheating MOSFET) plus a power management unit (PMU) featuring also a reference able	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
L6382DTR	Power management unit for microcontrolled ballast Description The L6382D device is suitable for LED drivers embedding a PFC stage and a half-bridge stage. The L6382D includes 4 MOSFET driving stages (for the PFC, for the half-bridge, and for the auxiliary MOSFET) plus a power management unit (PMU) featuring also a reference able to supply the mi	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
L6384	HIGH-VOLTAGE HALF BRIDGE DRIVER DESCRIPTION The L6384 is an high-voltage device, manufactured with the BCDOFF-LINE technology. It has an Half - Bridge Driver structure that enables to drive N Channel Power MOS or IGBT. The Upper (Floating) Section is enabled to work with voltage Rail up to 600V. The Logic Inputs are CMOS/TTL co	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
L6384D	HIGH-VOLTAGE HALF BRIDGE DRIVER DESCRIPTION The L6384 is an high-voltage device, manufactured with the BCDOFF-LINE technology. It has an Half - Bridge Driver structure that enables to drive N Channel Power MOS or IGBT. The Upper (Floating) Section is enabled to work with voltage Rail up to 600V. The Logic Inputs are CMOS/TTL co	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
L6384E	High-voltage half bridge driver Description The L6384E is an high-voltage device, manufactured with the BCDOFF-LINE technology. It has an Half - Bridge Driver structure that enables to drive N-channel Power MOS or IGBT. The High Side (Floating) Section is enabled to work with voltage Rail up to 600V. The Logic Inputs are CMOS	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
L6384ED	High-voltage half bridge driver Description The L6384E is an high-voltage device, manufactured with the BCDOFF-LINE technology. It has an Half - Bridge Driver structure that enables to drive N-channel Power MOS or IGBT. The High Side (Floating) Section is enabled to work with voltage Rail up to 600V. The Logic Inputs are CMOS	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
L6384ED013TR	High-voltage half bridge driver Description The L6384E is an high-voltage device, manufactured with the BCDOFF-LINE technology. It has an Half - Bridge Driver structure that enables to drive N-channel Power MOS or IGBT. The High Side (Floating) Section is enabled to work with voltage Rail up to 600V. The Logic Inputs are CMOS	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
L6385	HIGH-VOLTAGE HIGH AND LOW SIDE DRIVER DESCRIPTION The L6385 is an high-voltage device, manufactured with the BCDOFF-LINE technology. It has a Driver structure that enables to drive inde pendent referenced N Channel Power MOS or IGBT. The Upper (Floating) Section is enabled to work with voltage Rail up to 600V. The Logic Inputs are CM	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
L6385D	HIGH-VOLTAGE HIGH AND LOW SIDE DRIVER DESCRIPTION The L6385 is an high-voltage device, manufactured with the BCDOFF-LINE technology. It has a Driver structure that enables to drive inde pendent referenced N Channel Power MOS or IGBT. The Upper (Floating) Section is enabled to work with voltage Rail up to 600V. The Logic Inputs are CM	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
L6385E	High-voltage high and low side driver Description The L6385E is an high-voltage device, manufactured with the BCDOFF-LINE technology. It has an Half - Bridge Driver structure that enables to drive independent referenced N Channel Power MOS or IGBT. The High Side (Floating) Section is enabled to work with voltage Rail up to 600V. Th	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
L6385E	High-voltage high and low side driver Description The L6385E is an high-voltage device, manufactured with the BCDOFF-LINE technology. It has an Half - Bridge Driver structure that enables to drive independent referenced N Channel Power MOS or IGBT. The High Side (Floating) Section is enabled to work with voltage Rail up to 600V. Th	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
L6385ED	High-voltage high and low side driver Description The L6385E is an high-voltage device, manufactured with the BCDOFF-LINE technology. It has an Half - Bridge Driver structure that enables to drive independent referenced N Channel Power MOS or IGBT. The High Side (Floating) Section is enabled to work with voltage Rail up to 600V. Th	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
L6385ED	High-voltage high and low side driver Description The L6385E is an high-voltage device, manufactured with the BCDOFF-LINE technology. It has an Half - Bridge Driver structure that enables to drive independent referenced N Channel Power MOS or IGBT. The High Side (Floating) Section is enabled to work with voltage Rail up to 600V. Th	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
L6385ED013TR	High-voltage high and low side driver Description The L6385E is an high-voltage device, manufactured with the BCDOFF-LINE technology. It has an Half - Bridge Driver structure that enables to drive independent referenced N Channel Power MOS or IGBT. The High Side (Floating) Section is enabled to work with voltage Rail up to 600V. Th	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
L6385ED013TR	High-voltage high and low side driver Description The L6385E is an high-voltage device, manufactured with the BCDOFF-LINE technology. It has an Half - Bridge Driver structure that enables to drive independent referenced N Channel Power MOS or IGBT. The High Side (Floating) Section is enabled to work with voltage Rail up to 600V. Th	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
L6386	HIGH-VOLTAGE HIGH AND LOW SIDE DRIVER DESCRIPTION The L6386 is an high-voltage device, manufactured with the BCD ”OFF-LINE” technology. It has a Driver structure that enables to drive independent referenced Channel Power MOS or IGBT. The Upper (Floating) Section is enabled to work with voltage Rail up to 600V. The Logic Inputs are CM	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
L6386AD	High-voltage high and low side driver Description The L6386AD is an high-voltage device, manufactured with the BCD OFF-LINE technology. It has a driver structure that enables to drive independent referenced Channel Power MOS or IGBT. The high-side (floating) section is enabled to work with voltage rail up to 600 V. The Logic Inputs	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
L6386AD013TR	High-voltage high and low side driver Description The L6386AD is an high-voltage device, manufactured with the BCD OFF-LINE technology. It has a driver structure that enables to drive independent referenced Channel Power MOS or IGBT. The high-side (floating) section is enabled to work with voltage rail up to 600 V. The Logic Inputs	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
L6386D	HIGH-VOLTAGE HIGH AND LOW SIDE DRIVER DESCRIPTION The L6386 is an high-voltage device, manufactured with the BCD ”OFF-LINE” technology. It has a Driver structure that enables to drive independent referenced Channel Power MOS or IGBT. The Upper (Floating) Section is enabled to work with voltage Rail up to 600V. The Logic Inputs are CM	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
L6386E	High-voltage high and low side driver Description The L6386E is an high-voltage device, manufactured with the BCD OFF-LINE technology. It has a Driver structure that enables to drive independent referenced Channel Power MOS or IGBT. The High Side (Floating) Section is enabled to work with voltage Rail up to 600V. The Logic Inputs a	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
L6386ED	High-voltage high and low side driver Description The L6386E is an high-voltage device, manufactured with the BCD OFF-LINE technology. It has a Driver structure that enables to drive independent referenced Channel Power MOS or IGBT. The High Side (Floating) Section is enabled to work with voltage Rail up to 600V. The Logic Inputs a	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
L6386ED013TR	High-voltage high and low side driver Description The L6386E is an high-voltage device, manufactured with the BCD OFF-LINE technology. It has a Driver structure that enables to drive independent referenced Channel Power MOS or IGBT. The High Side (Floating) Section is enabled to work with voltage Rail up to 600V. The Logic Inputs a	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
L6387	HIGH-VOLTAGE HIGH AND LOW SIDE DRIVER DESCRIPTION The L6387 is an high-voltage device, manufactured with the BCDOFF-LINE technology. It has a Driver structure that enables to drive independent referenced N Channel Power MOS or IGBT. The Upper (Floating) Section is enabled to work with voltage Rail up to 600V. The Logic Inputs are C	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
L6387	HIGH-VOLTAGE HIGH AND LOW SIDE DRIVER HIGH VOLTAGE RAIL UP TO 600 V dV/dt IMMUNITY +- 50 V/nsec IN FULL TEMPERATURE RANGE DRIVER CURRENT CAPABILITY: 400 mA SOURCE, 650 mA SINK SWITCHING TIMES 50/30 nsec RISE/FALL WITH 1nF LOAD CMOS/TTL SCHMITT TRIGGER INPUTS WITH HYSTERESIS AND PULL DOWN INTERNAL BOOTSTRAP DIODE OUTPUTS IN P	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
L6387D	HIGH-VOLTAGE HIGH AND LOW SIDE DRIVER DESCRIPTION The L6387 is an high-voltage device, manufactured with the BCDOFF-LINE technology. It has a Driver structure that enables to drive independent referenced N Channel Power MOS or IGBT. The Upper (Floating) Section is enabled to work with voltage Rail up to 600V. The Logic Inputs are C	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
L6387DTR	HIGH-VOLTAGE HIGH AND LOW SIDE DRIVER HIGH VOLTAGE RAIL UP TO 600 V dV/dt IMMUNITY +- 50 V/nsec IN FULL TEMPERATURE RANGE DRIVER CURRENT CAPABILITY: 400 mA SOURCE, 650 mA SINK SWITCHING TIMES 50/30 nsec RISE/FALL WITH 1nF LOAD CMOS/TTL SCHMITT TRIGGER INPUTS WITH HYSTERESIS AND PULL DOWN INTERNAL BOOTSTRAP DIODE OUTPUTS IN P	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
L6387E	High-voltage high and low side driver Description The L6387E is an high-voltage device, manufactured with the BCDOFF-LINE technology. It has a Driver structure that enables to drive independent referenced N Channel Power MOS or IGBT. The high side (Floating) Section is enabled to work with voltage Rail up to 600V. The Logic Inputs	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
L6387ED	High-voltage high and low side driver Description The L6387E is an high-voltage device, manufactured with the BCDOFF-LINE technology. It has a Driver structure that enables to drive independent referenced N Channel Power MOS or IGBT. The high side (Floating) Section is enabled to work with voltage Rail up to 600V. The Logic Inputs	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
L6387ED013TR	High-voltage high and low side driver Description The L6387E is an high-voltage device, manufactured with the BCDOFF-LINE technology. It has a Driver structure that enables to drive independent referenced N Channel Power MOS or IGBT. The high side (Floating) Section is enabled to work with voltage Rail up to 600V. The Logic Inputs	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
L6388	HIGH-VOLTAGE HIGH AND LOW SIDE DRIVER DESCRIPTION The L6388 is an high-voltage device, manufactured with the BCDOFF-LINE technology. It has a Driver structure that enables to drive independent referenced N Channel Power MOS or IGBT. The Upper (Floating) Section is enabled to work with voltage Rail up to 600V. The Logic Inputs are C	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
L6388D	HIGH-VOLTAGE HIGH AND LOW SIDE DRIVER DESCRIPTION The L6388 is an high-voltage device, manufactured with the BCDOFF-LINE technology. It has a Driver structure that enables to drive independent referenced N Channel Power MOS or IGBT. The Upper (Floating) Section is enabled to work with voltage Rail up to 600V. The Logic Inputs are C	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
L6388D013TR	HIGH-VOLTAGE HIGH AND LOW SIDE DRIVER DESCRIPTION The L6388 is an high-voltage device, manufactured with the BCDOFF-LINE technology. It has a Driver structure that enables to drive independent referenced N Channel Power MOS or IGBT. The Upper (Floating) Section is enabled to work with voltage Rail up to 600V. The Logic Inputs are C	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
L6388E	High-voltage high and low side driver Description The L6388E is an high-voltage device, manufactured with the BCDOFF-LINE technology. It has a Driver structure that enables to drive independent referenced N Channel Power MOS or IGBT. The High Side(Floating) Section is enabled to work with voltage Rail up to 600V. The Logic Inputs a	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
L6388ED	High-voltage high and low side driver Description The L6388E is an high-voltage device, manufactured with the BCDOFF-LINE technology. It has a Driver structure that enables to drive independent referenced N Channel Power MOS or IGBT. The High Side(Floating) Section is enabled to work with voltage Rail up to 600V. The Logic Inputs a	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
L6388ED013TR	High-voltage high and low side driver Description The L6388E is an high-voltage device, manufactured with the BCDOFF-LINE technology. It has a Driver structure that enables to drive independent referenced N Channel Power MOS or IGBT. The High Side(Floating) Section is enabled to work with voltage Rail up to 600V. The Logic Inputs a	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
L6389E	High voltage high and low-side driver Features  High voltage rail up to 600 V  dV/dt immunity ± 50 V/nsec in full temperature range  Driver current capability: – 400 mA source – 650 mA sink  Switching times 70/40 nsec rise/fall with 1 nF load  3.3 V, 5 V, 15 V CMOS/TTL input comparators with hysteresis and pull-down 	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
L6389ED	High voltage high and low-side driver Features  High voltage rail up to 600 V  dV/dt immunity ± 50 V/nsec in full temperature range  Driver current capability: – 400 mA source – 650 mA sink  Switching times 70/40 nsec rise/fall with 1 nF load  3.3 V, 5 V, 15 V CMOS/TTL input comparators with hysteresis and pull-down 	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
L6389EDTR	High voltage high and low-side driver Features  High voltage rail up to 600 V  dV/dt immunity ± 50 V/nsec in full temperature range  Driver current capability: – 400 mA source – 650 mA sink  Switching times 70/40 nsec rise/fall with 1 nF load  3.3 V, 5 V, 15 V CMOS/TTL input comparators with hysteresis and pull-down 	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
L638-1450-X	包装：散装描述：SERVO DRIVER 144VDC 电机，电磁阀，螺线管，驱动器板/模块电机驱动器板，模块	ETC 知名厂家	ETC
L6382D	封装/外壳：20-SOIC（0.295"，7.50mm 宽）包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带描述：IC PFC/BALLAST CNTRL 20SO 集成电路（IC）照明，镇流器控制器	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
L6382D	Power management unit for microcontrolled ballast 文件：297.29 Kbytes Page：22 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
L6382D_07	Power management unit for microcontrolled ballast 文件：297.29 Kbytes Page：22 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
L6382D5	微控制器镇流器的PMU驱动器	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
L6382DTR	Power management unit for microcontrolled ballast 文件：297.29 Kbytes Page：22 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
L6384	HIGH-VOLTAGE HALF BRIDGE DRIVER	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
L6384	HIGH-VOLTAGE HALF BRIDGE DRIVER 文件：153.6 Kbytes Page：10 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
L6384D013TR	HIGH-VOLTAGE HALF BRIDGE DRIVER 文件：153.6 Kbytes Page：10 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
L6384E	带自举二极管的高压高低侧驱动器	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
L6386AD	High voltage high and low-side driver 文件：293.14 Kbytes Page：15 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
L6386AD013TR	High voltage high and low-side driver 文件：293.14 Kbytes Page：15 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
L6386ADTR	High voltage high and low-side driver 文件：293.14 Kbytes Page：15 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
L6388E_12	High-voltage high and low side driver 文件：206.26 Kbytes Page：19 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
638AFJ	Access Control, 16c (#18-3pr, #16-4c, #18-6c), Shielded, Outer Jacket, CMP Product Description Access Control Cable, Plenum-CMP, 3-18 AWG pairs, 4-16 AWG conductors, 4-18 AWG conductors, 2-18 AWG conductors, All conductors stranded bare copper with Flamarrest® insulation, Each cable has overall Beldfoil® shield and Flamarrest® jackets, Overall Flamarrest® jacket	BELDEN 百通	BELDEN
638AFS	Access Control, 16c (#18-3pr, #16-4c, #18-6c), Shielded, Banana Peel®, CMP Product Description Access Control Cable, Plenum-CMP, 3-18 AWG pairs, 4-16 AWG conductors, 4-18 AWG conductors, 2-18 AWG conductors, All conductors stranded bare copper with Flamarrest® insulation, Each cable has overall Beldfoil® shield and Flamarrest® jacket, Banana Peel® No overall jacket	BELDEN 百通	BELDEN
638AMJ	Access Control, 16c (#18-3pr, #16-4c, #18-6c), Only Card Reader Pairs Shielded, Outer Jacket, CMP Product Description Access Control Cable, Plenum-CMP, 3-18 AWG pairs, 4-16 AWG conductors, 4-18 AWG conductors, 2-18 AWG conductors, All conductors stranded bare copper with Flamarrest® insulation, Only Card Reader pairs have overall Beldfoil® shield and Flamarrest® jackets, Overall Flamarrest®	BELDEN 百通	BELDEN
638AMS	Access Control, 16c (#18-3pr, #16-4c, #18-6c), Only Card Reader Pairs Shielded, Banana Peel®, CMP Product Description Access Control Cable, Plenum-CMP, 3-18 AWG pairs, 4-16 AWG conductors, 4-18 AWG conductors, 2-18 AWG conductors, All conductors stranded bare copper with Flamarrest® insulation, Only Card Reader pairs have overall Beldfoil® shield and Flamarrest® jackets, Banana Peel® No over	BELDEN 百通	BELDEN
638	Surface Mountable 文件：135.67 Kbytes Page：2 Pages	OSCILENT	OSCILENT

L638产品属性

类型
描述
型号
L638
制造商
TE Connectivity
功能描述
362A114-4-0-CS8436 - Bulk

L638供应商更多...

更新时间：2025-12-26 16:52:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市昂芯微科技有限公司	L6384D	ST/意法	23+	SOP	5200	原厂原装	询价
深圳市星佑电子有限公司	L6384D	ST	00/01+	SOP-8	161	全新原装100真实现货供应	询价
深圳市赛尔通科技有限公司	L6384D	ST	23+	SOP-8	65600		询价
深圳市毅创腾电子科技有限公司	L6384D	ST	23+	SO-8	7000	绝对全新原装!100%保质量特价!请放心订购!	询价
深圳诚思涵科技有限公司	L6384D	ST	18+	SOP8	85600	保证进口原装可开17%增值税发票	询价
深圳市正纳电子有限公司	L6384D	ST(意法)	23+	NA	20094	正纳10年以上分销经验原装进口正品做服务做口碑有支持	询价
深圳市宇集芯电子有限公司	L6384D	ST	24+	SOP8	90000	一级代理商进口原装现货、假一罚十价格合理	询价
谛辉(北京/上海/青岛 )电子科技有限公司	L6384D	ST	25+	标准封装	18000	原厂直接发货进口原装	询价
深圳市欧立现代科技有限公司	L6384D	ST	24+	SOP	6980	原装现货,可开13%税票	询价
深圳市壹芯创科技有限公司	L6384D	STM	22+	PBFREE	5000	原装现货库存.价格优势!!	询价

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