HIGH-VOLTAGE HIGH AND LOW SIDE DRIVER

DESCRIPTION The L6388 is an high-voltage device, manufactured with the BCDOFF-LINE technology. It has a Driver structure that enables to drive independent referenced N Channel Power MOS or IGBT. The Upper (Floating) Section is enabled to work with voltage Rail up to 600V. The Logic Inputs are C

封装/外壳：8-DIP（0.300"，7.62mm） 包装：管件 描述：IC GATE DRVR HALF-BRIDG 8MINIDIP 集成电路（IC） 栅极驱动器

HIGH-VOLTAGE HIGH AND LOW SIDE DRIVER

HIGH-VOLTAGE HIGH AND LOW SIDE DRIVER

DESCRIPTION The L6388 is an high-voltage device, manufactured with the BCDOFF-LINE technology. It has a Driver structure that enables to drive independent referenced N Channel Power MOS or IGBT. The Upper (Floating) Section is enabled to work with voltage Rail up to 600V. The Logic Inputs are C

HIGH-VOLTAGE HIGH AND LOW SIDE DRIVER

DESCRIPTION The L6388 is an high-voltage device, manufactured with the BCDOFF-LINE technology. It has a Driver structure that enables to drive independent referenced N Channel Power MOS or IGBT. The Upper (Floating) Section is enabled to work with voltage Rail up to 600V. The Logic Inputs are C

带嵌入式自举二极管的HV高低侧驱动器

The L6388E is a high voltage gate driver, manufactured with the BCD™ “offline” technology, and able to drive a half-bridge of power MOSFET/IGBT devices. The high-side (floating) section is enabled to work with voltage rail up to 600 V. Both device outputs can sink and source 650 mA and 400 mA respec • High voltage rail up to 600 V \n• dV/dt immunity ± 50 V/nsec in full temperature range \n• Driver current capability: \n •400 mA source \n •650 mA sink \n• Switching times 70/40 nsec rise/fall with 1 nF load \n• 3.3 V, 5 V, 15 V CMOS/TTL input comparators with hysteresis and pull-down \n• Internal;

High-voltage high and low side driver

Description The L6388E is an high-voltage device, manufactured with the BCDOFF-LINE technology. It has a Driver structure that enables to drive independent referenced N Channel Power MOS or IGBT. The High Side(Floating) Section is enabled to work with voltage Rail up to 600V. The Logic Inputs a

High-voltage high and low side driver

Description The L6388E is an high-voltage device, manufactured with the BCDOFF-LINE technology. It has a Driver structure that enables to drive independent referenced N Channel Power MOS or IGBT. The High Side(Floating) Section is enabled to work with voltage Rail up to 600V. The Logic Inputs a

High-voltage high and low side driver

Description The L6388E is an high-voltage device, manufactured with the BCDOFF-LINE technology. It has a Driver structure that enables to drive independent referenced N Channel Power MOS or IGBT. The High Side(Floating) Section is enabled to work with voltage Rail up to 600V. The Logic Inputs a

封装/外壳：8-SOIC（0.154"，3.90mm 宽） 包装：管件 描述：IC GATE DRVR HALF-BRIDGE 8SO 集成电路（IC） 栅极驱动器

High-voltage high and low side driver

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栅极电源驱动器

SC70, Single/Dual Low-Voltage, Low-Power 關P Reset Circuits

General Description The MAX6381–MAX6390 microprocessor (µP) supervisory circuits monitor power-supply voltages from +1.8V to +5.0V while consuming only 3µA of supply current at +1.8V. Whenever VCC falls below the factory-set reset thresholds, the reset output asserts and remains asserted for a

COMPLEMENTARY SILICON POWER DARLINGTONS

Complementary Power Darlingtons For Isolated Package Applications Designed for general−purpose amplifiers and switching applications, where the mounting surface of the device is required to be electrically isolated from the heatsink or chassis. Features • Isolated Overmold Package

COMPLEMENTARY SILICON POWER DARLINGTONS 10 AMPERES 100 VOLTS 40 WATTS

Complementary Power Darlingtons For Isolated Package Applications Designed for general–purpose amplifiers and switching applications, where the mounting surface of the device is required to be electrically isolated from the heatsink or chassis. • Isolated Overmold Package, TO–220 T

Octal E1 Framer

FEATURES • Integrates eight E1 framers in a single device for terminating duplex E1 signals. • Supports transfer of PCM data to/from 2.048 MHz system-side devices. Also supports a fractional E1 system interface with independent ingress/egress fractional E1 rates. • Provides an optio

OCTAL E1 FRAMER

文件：2.15742 Mbytes Page：345 Pages