High voltage high and low-side driver

Features  High voltage rail up to 600 V  dV/dt immunity ± 50 V/nsec in full temperature range  Driver current capability: – 400 mA source – 650 mA sink  Switching times 70/40 nsec rise/fall with 1 nF load  3.3 V, 5 V, 15 V CMOS/TTL input comparators with hysteresis and pull-down 

封装/外壳：8-SOIC（0.154"，3.90mm 宽） 包装：管件 描述：IC GATE DRVR HALF-BRIDGE HI/LO 集成电路（IC） 栅极驱动器

High voltage high and low-side driver

Features  High voltage rail up to 600 V  dV/dt immunity ± 50 V/nsec in full temperature range  Driver current capability: – 400 mA source – 650 mA sink  Switching times 70/40 nsec rise/fall with 1 nF load  3.3 V, 5 V, 15 V CMOS/TTL input comparators with hysteresis and pull-down 

封装/外壳：8-SOIC（0.154"，3.90mm 宽） 包装：管件 描述：IC GATE DRVR HALF-BRIDGE HI/LO 集成电路（IC） 栅极驱动器

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