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L6385价格
参考价格：￥6.9513
型号：L6385 品牌：STMicroelectronics 备注：这里有L6385多少钱，2025年最近7天走势，今日出价，今日竞价，L6385批发/采购报价，L6385行情走势销售排行榜，L6385报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
L6385 | HIGH-VOLTAGE HIGH AND LOW SIDE DRIVER DESCRIPTION The L6385 is an high-voltage device, manufactured with the BCDOFF-LINE technology. It has a Driver structure that enables to drive inde pendent referenced N Channel Power MOS or IGBT. The Upper (Floating) Section is enabled to work with voltage Rail up to 600V. The Logic Inputs are CM | STMICROELECTRONICS 意法半导体 |   | |
L6385 | 封装/外壳：8-DIP（0.300"，7.62mm） 包装：卷带（TR） 描述：IC GATE DRVR HALF-BRIDG 8MINIDIP 集成电路（IC） 栅极驱动器 | STMICROELECTRONICS 意法半导体 | | |
L6385 | HIGH-VOLTAGE HIGH AND LOW SIDE DRIVER | STMICROELECTRONICS 意法半导体 | | |
HIGH-VOLTAGE HIGH AND LOW SIDE DRIVER DESCRIPTION The L6385 is an high-voltage device, manufactured with the BCDOFF-LINE technology. It has a Driver structure that enables to drive inde pendent referenced N Channel Power MOS or IGBT. The Upper (Floating) Section is enabled to work with voltage Rail up to 600V. The Logic Inputs are CM | STMICROELECTRONICS 意法半导体 | | ||
High-voltage high and low side driver Description The L6385E is an high-voltage device, manufactured with the BCDOFF-LINE technology. It has an Half - Bridge Driver structure that enables to drive independent referenced N Channel Power MOS or IGBT. The High Side (Floating) Section is enabled to work with voltage Rail up to 600V. Th | STMICROELECTRONICS 意法半导体 | | ||
High-voltage high and low side driver Description The L6385E is an high-voltage device, manufactured with the BCDOFF-LINE technology. It has an Half - Bridge Driver structure that enables to drive independent referenced N Channel Power MOS or IGBT. The High Side (Floating) Section is enabled to work with voltage Rail up to 600V. Th | STMICROELECTRONICS 意法半导体 | | ||
High-voltage high and low side driver Description The L6385E is an high-voltage device, manufactured with the BCDOFF-LINE technology. It has an Half - Bridge Driver structure that enables to drive independent referenced N Channel Power MOS or IGBT. The High Side (Floating) Section is enabled to work with voltage Rail up to 600V. Th | STMICROELECTRONICS 意法半导体 | | ||
High-voltage high and low side driver Description The L6385E is an high-voltage device, manufactured with the BCDOFF-LINE technology. It has an Half - Bridge Driver structure that enables to drive independent referenced N Channel Power MOS or IGBT. The High Side (Floating) Section is enabled to work with voltage Rail up to 600V. Th | STMICROELECTRONICS 意法半导体 | | ||
High-voltage high and low side driver Description The L6385E is an high-voltage device, manufactured with the BCDOFF-LINE technology. It has an Half - Bridge Driver structure that enables to drive independent referenced N Channel Power MOS or IGBT. The High Side (Floating) Section is enabled to work with voltage Rail up to 600V. Th | STMICROELECTRONICS 意法半导体 | | ||
High-voltage high and low side driver Description The L6385E is an high-voltage device, manufactured with the BCDOFF-LINE technology. It has an Half - Bridge Driver structure that enables to drive independent referenced N Channel Power MOS or IGBT. The High Side (Floating) Section is enabled to work with voltage Rail up to 600V. Th | STMICROELECTRONICS 意法半导体 | | ||
封装/外壳：8-SOIC（0.154"，3.90mm 宽） 包装：卷带（TR） 描述：IC GATE DRVR HALF-BRIDGE 8SO 集成电路（IC） 栅极驱动器 | STMICROELECTRONICS 意法半导体 | | ||
带嵌入式自举二极管的HV高低侧驱动器 | STMICROELECTRONICS 意法半导体 | | ||
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L6385产品属性
- 类型
描述
- 型号
L6385
- 功能描述
功率驱动器IC Hi-Volt Hi-Low Side
- RoHS
否
- 制造商
Micrel
- 产品
MOSFET Gate Drivers
- 类型
Low Cost High or Low Side MOSFET Driver
- 电源电压-最大
30 V
- 电源电压-最小
2.75 V
- 最大工作温度
+ 85 C
- 安装风格
SMD/SMT
- 封装/箱体
SOIC-8
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST(意法半导体) |
24+ |
SOP-8 |
2669 |
深耕行业12年,可提供技术支持。 |
|||
ST |
2016+ |
SOP8 |
8765 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
ST |
0448+ |
DIP/8 |
95 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
50 |
P8 |
ST/意法 |
17 |
92 |
|||
ST(意法) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
|||
ST/意法 |
25+ |
SOP8 |
12496 |
ST/意法原装正品L6385ED013TR即刻询购立享优惠#长期有货 |
|||
ST(意法) |
24+ |
SO-8 |
8338 |
原厂可订货,技术支持,直接渠道。可签保供合同 |
|||
ST |
21+ |
SOP-8 |
8000 |
原装正品现货假一罚十 |
|||
ST |
23+ |
8-DIP |
65600 |
||||
ST/意法 |
2450+ |
DIP8 |
9850 |
只做原装正品现货或订货假一赔十! |
L6385规格书下载地址
L6385参数引脚图相关
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L6385数据表相关新闻
L6388ED013TR 栅极驱动器
L6388ED013TR 是意法半导体（STMicroelectronics）推出的一款栅极驱动器芯片。它是一款高压高低侧驱动器，采用 BCD “离线” 技术制造，能够驱动功率 MOSFET 或 IGBT 器件组成的半桥电路。
2025-7-4L6385ED013TR 栅极驱动器
L6385ED013TR 栅极驱动器适用于电机控制、电源转换、逆变器等多种需要高压栅极驱动的应用场景
2024-10-30L6387ED013TR
L6387ED013TR
2023-10-13L6208Q
进口代理
2023-7-20L6353-智能驱动的功率MOS和IGBT的
描述 该L6353设备是智能驱动，所有的驱动和保护知识“已装船“。在这两个DIP和SO封装，可触发的逻辑电平或从一个信号optocoupleror脉冲变压器。它过滤寄生输入信号和驱动器的任何MOSor的IGBT。 特点 峰高输出电流能力(+8A) 宽电源电压范围（12.5至18V的） 0至-7.5V的负偏压电源范围 过电流和饱和度下降保护的外部电源设备（外部可编程） 闭锁保护（IGBT）的 两步开启（可编程） 正电源防护欠压 使用光耦器兼容输入
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2012-11-13
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