型号 功能描述 生产厂家&企业 LOGO 操作
K4H511638G

512MbG-dieDDRSDRAMSpecification

GeneralDescription TheK4H510438G/K4H510838G/K4H511638Gis536,870,912bitsofdoubledataratesynchronousDRAMorganizedas4x33,554,432/4x16,777,216/4x8,388,608wordsby4/8/16bits,fabricatedwithSAMSUNG′shighperformanceCMOStechnology.SynchronousfeatureswithDataStrobeal

SamsungSamsung Group

三星三星半导体

Samsung
K4H511638G

ConsumerMemory

SDRAMProductGuide MemoryDivision November2007

SamsungSamsung Group

三星三星半导体

Samsung

512MbC-dieDDRSDRAMSpecification

文件:212.57 Kbytes Page:24 Pages

SamsungSamsung Group

三星三星半导体

Samsung

512MbG-dieDDRSDRAMSpecification

GeneralDescription TheK4H510438G/K4H510838G/K4H511638Gis536,870,912bitsofdoubledataratesynchronousDRAMorganizedas4x33,554,432/4x16,777,216/4x8,388,608wordsby4/8/16bits,fabricatedwithSAMSUNG′shighperformanceCMOStechnology.SynchronousfeatureswithDataStrobeal

SamsungSamsung Group

三星三星半导体

Samsung

512MbG-dieDDRSDRAMSpecification

GeneralDescription TheK4H510438G/K4H510838G/K4H511638Gis536,870,912bitsofdoubledataratesynchronousDRAMorganizedas4x33,554,432/4x16,777,216/4x8,388,608wordsby4/8/16bits,fabricatedwithSAMSUNG′shighperformanceCMOStechnology.SynchronousfeatureswithDataStrobeal

SamsungSamsung Group

三星三星半导体

Samsung

512MbB-dieDDRSDRAMSpecification

KeyFeatures •VDD:2.5V±0.2V,VDDQ:2.5V±0.2VforDDR266,333 •VDD:2.6V±0.1V,VDDQ:2.6V±0.1VforDDR400 •Double-data-ratearchitecture;twodatatransfersperclockcycle •Bidirectionaldatastrobe[DQS](x4,x8)&[L(U)DQS](x16) •Fourbanksoperation •Differentialcl

SamsungSamsung Group

三星三星半导体

Samsung

512MbB-dieDDRSDRAMSpecification

KeyFeatures •VDD:2.5V±0.2V,VDDQ:2.5V±0.2VforDDR266,333 •VDD:2.6V±0.1V,VDDQ:2.6V±0.1VforDDR400 •Double-data-ratearchitecture;twodatatransfersperclockcycle •Bidirectionaldatastrobe[DQS](x4,x8)&[L(U)DQS](x16) •Fourbanksoperation •Differentialcl

SamsungSamsung Group

三星三星半导体

Samsung

512MbB-dieDDRSDRAMSpecification

文件:392.89 Kbytes Page:24 Pages

SamsungSamsung Group

三星三星半导体

Samsung

512MbB-dieDDRSDRAMSpecification

文件:392.89 Kbytes Page:24 Pages

SamsungSamsung Group

三星三星半导体

Samsung

K4H511638G产品属性

  • 类型

    描述

  • 型号

    K4H511638G

  • 制造商

    SAMSUNG

  • 制造商全称

    Samsung semiconductor

  • 功能描述

    Consumer Memory

更新时间:2024-6-6 18:04:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
SAMSUNG
23+
BGA
8890
价格优势/原装现货/客户至上/欢迎广大客户来电查询
SAMSUNG/三星
21+
TSOP
10000
全新原装 公司现货 价优
SAMSUNG
23+
NA
2200
航宇科工半导体-中国航天科工集团战略合作伙伴!
SAMSUNG
存储器
TSOP66
40442
SAMSUNG原装存储芯片-诚信为本
SAMSUNG/三星
09+
TSOP
10
只做正品,原装现货实单来谈
SAMSUNG/三星
23+
TSOP
98900
原厂原装正品现货!!
SAMSUNG
22+
TSOP
8000
原装正品支持实单
SAMSUNG/三星
22+
BGA
40256
本公司只做原装进口现货
SAMSUNG/三星
FBGA
68900
原包原标签100%进口原装常备现货!
SAMSUNG/三星
2024+实力库存
TSOP66
400
只做原厂渠道 可追溯货源

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