512Mb G-die DDR SDRAM Specification

General Description The K4H510438G / K4H510838G / K4H511638G is 536,870,912 bits of double data rate synchronous DRAM organized as 4x 33,554,432 / 4x 16,777,216 / 4x 8,388,608 words by 4/8/16bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous features with Data Strobe al

512Mb C-die DDR SDRAM Specification

文件：212.57 Kbytes Page：24 Pages

512Mb B-die DDR SDRAM Specification

Key Features • VDD : 2.5V ± 0.2V, VDDQ : 2.5V ± 0.2V for DDR266, 333 • VDD : 2.6V ± 0.1V, VDDQ : 2.6V ± 0.1V for DDR400 • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe [DQS] (x4,x8) & [L(U)DQS] (x16) • Four banks operation • Differential cl

512Mb B-die DDR SDRAM Specification

文件：392.89 Kbytes Page：24 Pages

512Mb B-die DDR SDRAM Specification

文件：392.89 Kbytes Page：24 Pages

512Mb B-die DDR SDRAM Specification

文件：392.89 Kbytes Page：24 Pages