PolarHVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated

VDSS = 500 V ID25 = 16 A RDS(on) ≤ 400 mΩ Features Unclamped Inductive Switching (UIS) rated International standard packages Low package inductance - easy to drive and to protect Advantages Easy to mount Space savings High power density

isc N-Channel MOSFET Transistor

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N通道标准 Polar™ MOSFET

N通道标准 Polar™ MOSFET

isc N-Channel MOSFET Transistor

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N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode

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16 Amps, 500 Volts N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 16N50 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalan

500V, 16A N-Channel MOSFET

General Description The AOT16N50 & AOTF16N50 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capabili

16A 500V N-channel enhanced field effect transistor

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16A竊?00V N-CHANNEL MOSFET

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isc N-Channel MOSFET Transistor

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