丝印代码：FDA16N50；N-Channel UniFETTM MOSFET 500V, 16.5 A, 380 mΩ

Description UniFETTM MOSFET is ON Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 16.5A@ TC=25℃ ·Drain Source Voltage : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.38Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, D

500V N-Channel MOSFET

Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hig

500V N-Channel MOSFET

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500V N-Channel MOSFET

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Optimized Switch for Discontinuous Current Mode Power Factor Correction

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N 沟道 UniFETTM MOSFET 500V，16.5A，380 mΩ

UniFETTM MOSFET 是飞兆半导体®的高压 MOSFET 系列产品，基于平面条形技术和 DMOS 技术。 该 MOSFET 产品专用于降低通态电阻，并提供更好的开关性能和更高的雪崩能量强度。 该器件系列适用于开关电源转换器应用，如功率因数校正（PFC）、平板显示器（FPD）电视电源、ATX 及灯用电子镇流器。 •RDS(on) = 380mΩ （最大值）@ VGS = 10V, ID = 8.3A\n•低栅极电荷（典型值 32nC)\n•低 Crss（典型值 20pF)\n•100% 经过雪崩击穿测试;

功率 MOSFET，N 沟道，UniFETTM，500 V，16.5 A，380 mΩ，TO-3P

UniFETTMMOSFET 是飞兆半导体的高压 MOSFET 系列产品，基于平面条形技术和 DMOS 技术。 该 MOSFET 产品专用于降低导通电阻，并提供更好的开关性能和更高的雪崩能量强度。 该器件系列适用于开关电源转换器应用，如功率因数校正(PFC)、平板显示器(FPD)电视电源、ATX 及灯用电子镇流器。 •RDS(on) = 310 mΩ（典型值） @ VGS = 10 V, ID = 8.3 A\n•低栅极电荷（典型值 32 nC)\n•低Crss（典型值 20 pF)\n•100% 经过雪崩击穿测试\n•符合 RoHS 标准;

500V N-Channel MOSFET

文件：391.54 Kbytes Page：9 Pages

500V N-Channel MOSFET

文件：718.96 Kbytes Page：9 Pages

500V N-Channel MOSFET

文件：391.54 Kbytes Page：9 Pages

500V N-Channel MOSFET

文件：718.96 Kbytes Page：9 Pages

N-Channel UniFETTM MOSFET

文件：1.03841 Mbytes Page：8 Pages

MOSFET 500V 16.5A NCH

500V N-Channel MOSFET

500V N-Channel MOSFET

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 16A@ TC=25℃ ·Drain Source Voltage -VDSS= 500V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 400mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

TMOS POWER FET 16 AMPERES 500 VOLTS RDS(on) = 0.40 OHM

TMOS E−FET Power Field Effect Transistor D3PAK for Surface Mount N–Channel Enhancement–Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, this advanced TMOS E–FET is

SMPS MOSFET

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