500V N-Channel MOSFET

Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hig

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 16.5A@ TC=25℃ ·Drain Source Voltage : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.38Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, D

500V N-Channel MOSFET

文件：391.54 Kbytes Page：9 Pages

500V N-Channel MOSFET

文件：718.96 Kbytes Page：9 Pages

Optimized Switch for Discontinuous Current Mode Power Factor Correction

文件：438.39 Kbytes Page：8 Pages

N-Channel UniFETTM MOSFET 500V, 16.5 A, 380 mΩ

Description UniFETTM MOSFET is ON Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for

500V N-Channel MOSFET

文件：391.54 Kbytes Page：9 Pages

500V N-Channel MOSFET

文件：718.96 Kbytes Page：9 Pages

500V N-Channel MOSFET

文件：391.54 Kbytes Page：9 Pages

500V N-Channel MOSFET

文件：718.96 Kbytes Page：9 Pages

N 沟道 UniFETTM MOSFET 500V，16.5A，380 mΩ

N-Channel UniFETTM MOSFET

文件：1.03841 Mbytes Page：8 Pages

MOSFET 500V 16.5A NCH

功率 MOSFET，N 沟道，UniFETTM，500 V，16.5 A，380 mΩ，TO-3P

16 Amps, 500 Volts N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 16N50 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalan

500V, 16A N-Channel MOSFET

General Description The AOT16N50 & AOTF16N50 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capabili

16A 500V N-channel enhanced field effect transistor

文件：900.91 Kbytes Page：6 Pages

16A竊?00V N-CHANNEL MOSFET

文件：329.21 Kbytes Page：6 Pages

isc N-Channel MOSFET Transistor

文件：305.65 Kbytes Page：2 Pages