TMOSPOWERFET16AMPERES500VOLTSRDS(on)=0.40OHM

TMOSE−FETPowerFieldEffectTransistorD3PAKforSurfaceMount N–ChannelEnhancement–ModeSiliconGate ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage–blockingcapabilitywithoutdegradingperformanceovertime.Inaddition,thisadvancedTMOSE–FETis

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=16A@TC=25℃ ·DrainSourceVoltage-VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.4Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

PowerFieldEffectTransistor

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16Amps,500VoltsN-CHANNELPOWERMOSFET

DESCRIPTION TheUTC16N50isanN-channelmodepowerMOSFETusingUTC’sadvancedtechnologytoprovidecustomerswithplanarstripeandDMOStechnology.Thistechnologyallowsaminimumon-stateresistanceandsuperiorswitchingperformance.Italsocanwithstandhighenergypulseintheavalan

500V,16AN-ChannelMOSFET

GeneralDescription TheAOT16N50&AOTF16N50havebeenfabricatedusinganadvancedhighvoltageMOSFETprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinpopularAC-DCapplications.ByprovidinglowRDS(on),CissandCrssalongwithguaranteedavalanchecapabili

16A500VN-channelenhancedfieldeffecttransistor

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16A竊?00VN-CHANNELMOSFET

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iscN-ChannelMOSFETTransistor

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