isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 16A@ TC=25℃ ·Drain Source Voltage -VDSS= 500V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 400mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

PolarHV HiperFET Power MOSFET

PolarHV™ HiperFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Features • International Standard Packages • Avalanche Rated • Fast Intrinsic Diode • Low Package Inductance Advantages • High Power Density • Easy to Mount • Space Savings Applications • S

N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 16A@ TC=25℃ · Drain Source Voltage -VDSS=500V(Min) · Static Drain-Source On-Resistance -RDS(on) = 400mΩ(Max)@VGS= 10V DESCRIPTION · DC-DC Converters · Motor Drive · Power Switch

N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier

Polar3 ™ HiPerFET™ Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier Features • International Standard Packages • Fast Intrinsic Rectifier • Avalanche Rated • Low RDS(ON) and QG • Low Package Inductance Advantages • High Power Density • Easy to Mount • Sp

Power MOSFET

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N通道HiPerFET

500V N-Channel MOSFET

Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hig

500V N-Channel MOSFET

500V N-Channel MOSFET

TMOS POWER FET 16 AMPERES 500 VOLTS RDS(on) = 0.40 OHM

TMOS E−FET Power Field Effect Transistor D3PAK for Surface Mount N–Channel Enhancement–Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, this advanced TMOS E–FET is

SMPS MOSFET

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