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IXTJ4N150价格
参考价格：￥31.7255
型号：IXTJ4N150 品牌：Ixys 备注：这里有IXTJ4N150多少钱，2025年最近7天走势，今日出价，今日竞价，IXTJ4N150批发/采购报价，IXTJ4N150行情走势销售排行榜，IXTJ4N150报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IXTJ4N150 | N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 文件：160.02 Kbytes Page：5 Pages | IXYS 艾赛斯 |   | |
IXTJ4N150 | N通道标准高电压MOSFET | Littelfuse 力特 | | |
N-CHANNEL 1500V - 5-ohm - 4A TO-220FH Very High Voltage PowerMESH-TM MOSFET Description Using the well consolidated high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of very high voltage Power MOSFETs with outstanding performances. The strengthened layout coupled with the company’s proprietary edge termination structure, gives th | STMICROELECTRONICS 意法半导体 | | ||
N-Channel Enhancement Mode MOSFET 文件：247.78 Kbytes Page：4 Pages | DACO 罡境电子 | | ||
N-channel 1500V - 5廓 - 4A - TO-220FH Very high voltage PowerMESH??Power MOSFET 文件：249.12 Kbytes Page：13 Pages | STMICROELECTRONICS 意法半导体 | | ||
N-Channel MOSFET 文件：730.15 Kbytes Page：3 Pages | HMSEMI 华之美半导体 | | ||
N-Channel Enhancement Mode Fast Intrinsic Diode 文件：204.1 Kbytes Page：5 Pages | IXYS 艾赛斯 | |
IXTJ4N150产品属性
- 类型
描述
- 型号
IXTJ4N150
- 功能描述
MOSFET High Voltage Power MOSFET
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Littelfuse/IXYS |
24+ |
TO264 |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
|||
IXYS/艾赛斯 |
25+ |
TO264 |
54648 |
百分百原装现货 实单必成 欢迎询价 |
|||
IXYS(艾赛斯) |
23+ |
N/A |
7500 |
IXYS(艾赛斯)全系列在售 |
|||
IXYS |
25+ |
TO-3PL |
18000 |
原厂直接发货进口原装 |
|||
IXYS |
NA |
8560 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
IXYS |
23+ |
TO-3PL |
5000 |
原装正品,假一罚十 |
|||
IXYS |
24+ |
TO-264 |
8866 |
||||
IXYS/艾赛斯 |
23+ |
TO-247 |
6000 |
原装正品，支持实单 |
|||
IXYS |
23+ |
TO3PL |
8000 |
只做原装现货 |
|||
IXYS |
23+ |
TO3PL |
7000 |
IXTJ4N150规格书下载地址
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2018-12-28
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