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STFV4N150

N-CHANNEL 1500V - 5-ohm - 4A TO-220FH Very High Voltage PowerMESH-TM MOSFET

Description Using the well consolidated high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of very high voltage Power MOSFETs with outstanding performances. The strengthened layout coupled with the company’s proprietary edge termination structure, gives th

STMICROELECTRONICS

意法半导体

STFV4N150

N-CHANNEL 1500V - 5-ohm - 4A TO-220FH Very High Voltage PowerMESH-TM MOSFET

STMICROELECTRONICS

意法半导体

STFV4N150

N-channel 1500V - 5廓 - 4A - TO-220FH Very high voltage PowerMESH??Power MOSFET

文件:249.12 Kbytes Page:13 Pages

STMICROELECTRONICS

意法半导体

STFV4N150

N-channel 1500 V - 5 廓 - 4 A - PowerMESH??Power MOSFET TO-220 - TO-220FH - TO-247 - TO-3PF

文件:459.62 Kbytes Page:16 Pages

STMICROELECTRONICS

意法半导体

N-channel 1500V - 5廓 - 4A - TO-220FH Very high voltage PowerMESH??Power MOSFET

文件:249.12 Kbytes Page:13 Pages

STMICROELECTRONICS

意法半导体

N-channel 1500 V - 5 廓 - 4 A - PowerMESH??Power MOSFET TO-220 - TO-220FH - TO-247 - TO-3PF

文件:459.62 Kbytes Page:16 Pages

STMICROELECTRONICS

意法半导体

N-CHANNEL 1500V - 5-ohm - 4A TO-220FH Very High Voltage PowerMESH-TM MOSFET

Description Using the well consolidated high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of very high voltage Power MOSFETs with outstanding performances. The strengthened layout coupled with the company’s proprietary edge termination structure, gives th

STMICROELECTRONICS

意法半导体

N-CHANNEL 1500V - 5 - 4A TO-220/TO-247 Very High Voltage PowerMESH MOSFET

Description Using the well consolidated high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of very high voltage Power MOSFETs with outstanding performances. The strengthened layout coupled with the company’s proprietary edge termination structure, gives th

STMICROELECTRONICS

意法半导体

N-CHANNEL 1500V - 5 - 4A TO-220/TO-247 Very High Voltage PowerMESH MOSFET

Description Using the well consolidated high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of very high voltage Power MOSFETs with outstanding performances. The strengthened layout coupled with the company’s proprietary edge termination structure, gives th

STMICROELECTRONICS

意法半导体

N-channel 1500V - 5廓 - 4A - TO-220/TO-247 Very high PowerMESH??Power MOSFET

文件:365.47 Kbytes Page:14 Pages

STMICROELECTRONICS

意法半导体

STFV4N150产品属性

  • 类型

    描述

  • 型号

    STFV4N150

  • 功能描述

    MOSFET IGBT

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2026-8-1 17:57:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ST
25+
66880
原装正品,欢迎询价
Sage
24+
模块
400
ST
22+
TO2203 Isolated Tab
9000
原厂渠道,现货配单
ST
24+
TO-220-3
43
YOSONIC
23+
SMD
66600
专业芯片配单原装正品假一罚十
SAMHOP
20+
TO220F
36900
原装优势主营型号-可开原型号增税票
ST
23+
TO2203 Isolated Tab
8000
只做原装现货
ST
24+
07+
1
原装现货假一罚十
SOLA-HD
2022+
1
全新原装 货期两周
YOSONIC
25+
SMD
10000
全新原装现货库存

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