N-CHANNEL 1500V - 5 - 4A TO-220/TO-247 Very High Voltage PowerMESH MOSFET

Description Using the well consolidated high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of very high voltage Power MOSFETs with outstanding performances. The strengthened layout coupled with the company’s proprietary edge termination structure, gives th

N沟道1500 V、5 Ohm、4 A PowerMESH(TM) 功率MOSFET，TO-247封装

Using the well consolidated high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of very high voltage Power MOSFETs with outstanding performances.\n\n The strengthened layout coupled with the company’s proprietary edge termination structure, gives the lowest RDS(on) • 100% avalanche tested \n• High speed switching \n• Intrinsic capacitances and Qg minimized \n• Creepage distance path is 5.4 mm (typ.) for TO-3PF \n• Fully isolated TO-3PF plastic packages;

isc N-Channel MOSFET Transistor

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N-channel 1500V - 5廓 - 4A - TO-220/TO-247 Very high PowerMESH??Power MOSFET

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N-channel 1500 V - 5 廓 - 4 A - PowerMESH??Power MOSFET TO-220 - TO-220FH - TO-247 - TO-3PF

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丝印代码：W4N150；N-channel 1500 V, 5 廓, 4 A, PowerMESH??Power MOSFET in TO-220, TO-247, TO-3PF

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N-CHANNEL 1500V - 5-ohm - 4A TO-220FH Very High Voltage PowerMESH-TM MOSFET

Description Using the well consolidated high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of very high voltage Power MOSFETs with outstanding performances. The strengthened layout coupled with the company’s proprietary edge termination structure, gives th

N-CHANNEL 1500V - 5 - 4A TO-220/TO-247 Very High Voltage PowerMESH MOSFET

Description Using the well consolidated high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of very high voltage Power MOSFETs with outstanding performances. The strengthened layout coupled with the company’s proprietary edge termination structure, gives th

N-channel 1500V - 5廓 - 4A - TO-220FH Very high voltage PowerMESH??Power MOSFET

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