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HGTG30N60C3价格
参考价格：￥25.5447
型号：HGTG30N60C3D 品牌：FAIRCHILD 备注：这里有HGTG30N60C3多少钱，2026年最近7天走势，今日出价，今日竞价，HGTG30N60C3批发/采购报价，HGTG30N60C3行情走势销售排行榜，HGTG30N60C3报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
HGTG30N60C3 | 63A, 600V, UFS Series N-Channel IGBT The HGTG30N60C3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately | INTERSIL |   | |
HGTG30N60C3 | 63A, 600V, UFS Series N-Channel IGBT | RENESAS 瑞萨 | | |
63A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes The HGTG30N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderatel | FAIRCHILD 仙童半导体 | | ||
63A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode Description The HGTG30N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies o | HARRIS | | ||
63A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes The HGTG30N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderatel | INTERSIL | | ||
63A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes Features • 63A, 600V at TC = 25oC • Typical Fall Time . . . . . . . . . . . . . . . 230ns at TJ = 150oC • Short Circuit Rating • Low Conduction Loss • Hyperfast Anti-Parallel Diode Packaging JEDEC STYLE TO-247 | FAIRCHILD 仙童半导体 | | ||
63A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes Features • 63A, 600V at TC = 25oC • Typical Fall Time . . . . . . . . . . . . . . . 230ns at TJ = 150oC • Short Circuit Rating • Low Conduction Loss • Hyperfast Anti-Parallel Diode Packaging JEDEC STYLE TO-247 | FAIRCHILD 仙童半导体 | | ||
63A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes | RENESAS 瑞萨 | | ||
600V, PT IGBT | ONSEMI 安森美半导体 | | ||
封装/外壳：TO-247-3 包装：管件 描述：IGBT 600V 63A TO247-3 分立半导体产品 晶体管 - UGBT、MOSFET - 单 | ONSEMI 安森美半导体 | | ||
63A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes Features • 63A, 600V at TC = 25oC • Typical Fall Time . . . . . . . . . . . . . . . 230ns at TJ = 150oC • Short Circuit Rating • Low Conduction Loss • Hyperfast Anti-Parallel Diode Packaging JEDEC STYLE TO-247 | FAIRCHILD 仙童半导体 | |
HGTG30N60C3产品属性
- 类型
描述
- 型号
HGTG30N60C3
- 制造商
Rochester Electronics LLC
- 功能描述
- Bulk
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
FSC |
23+ |
TO-3P |
8650 |
受权代理!全新原装现货特价热卖! |
|||
FSC |
TO-247 |
68500 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
onsemi(安森美) |
24+ |
TO-247 |
1224 |
原厂订货渠道,支持BOM配单一站式服务 |
|||
ONSEMI |
25+ |
TO-247 |
11580 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
|||
FAIRCHILD/仙童 |
23+ |
TO-247 |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
三年内 |
1983 |
只做原装正品 |
|||||
24+ |
N/A |
64000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
FAIRC |
23+ |
TO-247 |
7300 |
专注配单,只做原装进口现货 |
|||
ON/安森美 |
2447 |
SMD |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
FAIRCHILD/仙童 |
23+ |
TO-247 |
50000 |
全新原装正品现货,支持订货 |
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