63A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes

The HGTG30N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderatel

63A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes

Features • 63A, 600V at TC = 25oC • Typical Fall Time . . . . . . . . . . . . . . . 230ns at TJ = 150oC • Short Circuit Rating • Low Conduction Loss • Hyperfast Anti-Parallel Diode Packaging JEDEC STYLE TO-247

63A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes

The HGTG30N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderatel

63A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

Description The HGTG30N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies o

600V, PT IGBT

HGTG30N60C3D 是一款 MOS 门控高压开关器件，它充分融合了 MOSFET 和双极晶体管的最佳功能。 该器件具有 MOSFET 的高输入阻抗以及双极晶体管的低通态导通损耗。 非常低的通态压降仅在 25°C 到 150°C 之间适度变化。使用的 IGBT 是开发类型 TA49051。 反向并联 IGBT 使用的二极管是开发类型 TA49053。 该IGBT非常适合许多工作频率中等，而低传导损耗又至关重要的高压开关应用。 以前的开发类型为 TA49014。 •63A, 600V, TC = 25°C\n•典型下降时间： 230ns @ TJ = 150°C\n•短路额定值\n•低导通损耗\n•超快反向并联二极管;

封装/外壳：TO-247-3 包装：管件 描述：IGBT 600V 63A TO247-3 分立半导体产品 晶体管 - UGBT、MOSFET - 单

63A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes

63A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes

Features • 63A, 600V at TC = 25oC • Typical Fall Time . . . . . . . . . . . . . . . 230ns at TJ = 150oC • Short Circuit Rating • Low Conduction Loss • Hyperfast Anti-Parallel Diode Packaging JEDEC STYLE TO-247

63A, 600V, UFS Series N-Channel IGBT

The HGTG30N60C3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately

GenX3 600V IGBT

High Speed PT IGBTs for 40-100kHz switching Features Optimized for low switching losses Square RBSOA International standard packages

GenX3 600V IGBT

High Speed PT IGBTs for 40-100kHz switching Features Optimized for low switching losses Square RBSOA International standard packages