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HGTG30N60C3D价格
参考价格：￥25.5447
型号：HGTG30N60C3D 品牌：FAIRCHILD 备注：这里有HGTG30N60C3D多少钱，2025年最近7天走势，今日出价，今日竞价，HGTG30N60C3D批发/采购报价，HGTG30N60C3D行情走势销售排行榜，HGTG30N60C3D报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
HGTG30N60C3D | 63A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes The HGTG30N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderatel | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 |   | |
HGTG30N60C3D | 63A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode Description The HGTG30N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies o | HARRIS | | |
HGTG30N60C3D | 63A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes The HGTG30N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderatel | Intersil | | |
HGTG30N60C3D | 63A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes Features • 63A, 600V at TC = 25oC • Typical Fall Time . . . . . . . . . . . . . . . 230ns at TJ = 150oC • Short Circuit Rating • Low Conduction Loss • Hyperfast Anti-Parallel Diode Packaging JEDEC STYLE TO-247 | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | |
HGTG30N60C3D | 封装/外壳：TO-247-3 包装：管件 描述：IGBT 600V 63A TO247-3 分立半导体产品 晶体管 - UGBT、MOSFET - 单 | ONSEMI 安森美半导体 | | |
HGTG30N60C3D | 63A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes | RENESAS 瑞萨 | | |
HGTG30N60C3D | 600V, PT IGBT | ONSEMI 安森美半导体 | | |
63A, 600V, UFS Series N-Channel IGBT The HGTG30N60C3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately | Intersil | | ||
63A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes Features • 63A, 600V at TC = 25oC • Typical Fall Time . . . . . . . . . . . . . . . 230ns at TJ = 150oC • Short Circuit Rating • Low Conduction Loss • Hyperfast Anti-Parallel Diode Packaging JEDEC STYLE TO-247 | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | ||
63A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes Features • 63A, 600V at TC = 25oC • Typical Fall Time . . . . . . . . . . . . . . . 230ns at TJ = 150oC • Short Circuit Rating • Low Conduction Loss • Hyperfast Anti-Parallel Diode Packaging JEDEC STYLE TO-247 | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |
HGTG30N60C3D产品属性
- 类型
描述
- 型号
HGTG30N60C3D
- 功能描述
IGBT 晶体管 63a 600V NCh IGBT Hyperfast anti-para
- RoHS
否
- 制造商
Fairchild Semiconductor
- 配置
集电极—发射极最大电压
- VCEO
650 V
- 集电极—射极饱和电压
2.3 V
- 栅极/发射极最大电压
20 V 在25
- C的连续集电极电流
150 A
- 栅极—射极漏泄电流
400 nA
- 功率耗散
187 W
- 封装/箱体
TO-247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
onsemi(安森美) |
24+ |
TO-247 |
1224 |
原厂订货渠道,支持BOM配单一站式服务 |
|||
FAIRCHILD |
NEW |
TO-247 |
9526 |
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订 |
|||
FSC |
23+ |
NA |
986 |
专做原装正品,假一罚百! |
|||
ON/安森美 |
21+ |
SMD |
30000 |
百域芯优势 实单必成 可开13点增值税 |
|||
Fairchild(飞兆/仙童) |
24+ |
N/A |
8048 |
原厂可订货,技术支持,直接渠道。可签保供合同 |
|||
FAIRCHILD |
2025+ |
TO-247 |
32560 |
原装优势绝对有货 |
|||
FAIRCHILD/仙童 |
23+ |
TO247 |
6000 |
原装正品，支持实单 |
|||
三年内 |
1983 |
只做原装正品 |
|||||
FAI |
2023+ |
TO-247 |
50000 |
原装现货 |
|||
ON/安森美 |
2447 |
SMD |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
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