High Voltage IGBT

High Voltage IGBT Short Circuit SOA Capability Square RBSOA Features ● NPT IGBT technology ● high switching speed ● low tail current ● no latch up ● short circuit capability ● positive temperature coefficient for easy paralleling ● MOS input, voltage controlled ● International standard p

封装/外壳：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB 包装：管件 描述：IGBT 1200V 38A 200W TO263AB 分立半导体产品 晶体管 - UGBT、MOSFET - 单

NPT 标准 IGBT

High Voltage IGBT

文件：242.06 Kbytes Page：4 Pages

包装：管件 描述：IGBT 分立半导体产品 晶体管 - UGBT、MOSFET - 单

63A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

63A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG20N120CND is a Non-Punch Through (NPT) IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has

General purpose inverters

文件：820.86 Kbytes Page：9 Pages

Insulated-Gate Bipolar Transistor in a TO-3P Plastic Package

文件：769.26 Kbytes Page：6 Pages

1200V, 20A Trench IGBT

文件：721.12 Kbytes Page：9 Pages

1200V, 20A Trench IGBT

文件：721.12 Kbytes Page：9 Pages