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IS61LV256价格

参考价格：￥24.8856

型号：IS61LV25616AL-10BLI 品牌：ISSI 备注：这里有IS61LV256多少钱，2026年最近7天走势，今日出价，今日竞价，IS61LV256批发/采购报价，IS61LV256行情走势销售排行榜，IS61LV256报价。

型号	功能描述	生产厂家企业	LOGO
IS61LV256	32K X 8 LOW VOLTAGE CMOS STATIC RAM	ICSI	ICSI
IS61LV256	ASYNCHRONOUS STATIC RAM, High Speed A.SRAM	ISSI 矽成半导体	ISSI
IS61LV256-10J	32K X 8 LOW VOLTAGE CMOS STATIC RAM	ICSI	ICSI
IS61LV256-10JI	32K X 8 LOW VOLTAGE CMOS STATIC RAM	ICSI	ICSI
IS61LV256-10T	32K X 8 LOW VOLTAGE CMOS STATIC RAM	ICSI	ICSI
IS61LV256-10TI	32K X 8 LOW VOLTAGE CMOS STATIC RAM	ICSI	ICSI
IS61LV256-12J	32K X 8 LOW VOLTAGE CMOS STATIC RAM	ICSI	ICSI
IS61LV256-12JI	32K X 8 LOW VOLTAGE CMOS STATIC RAM	ICSI	ICSI
IS61LV256-12T	32K X 8 LOW VOLTAGE CMOS STATIC RAM	ICSI	ICSI
IS61LV256-12TI	32K X 8 LOW VOLTAGE CMOS STATIC RAM	ICSI	ICSI
IS61LV256-15J	32K X 8 LOW VOLTAGE CMOS STATIC RAM	ICSI	ICSI
IS61LV256-15JI	32K X 8 LOW VOLTAGE CMOS STATIC RAM	ICSI	ICSI
IS61LV256-15T	32K X 8 LOW VOLTAGE CMOS STATIC RAM	ICSI	ICSI
IS61LV256-15TI	32K X 8 LOW VOLTAGE CMOS STATIC RAM	ICSI	ICSI
IS61LV256-20J	32K X 8 LOW VOLTAGE CMOS STATIC RAM	ICSI	ICSI
IS61LV256-20JI	32K X 8 LOW VOLTAGE CMOS STATIC RAM	ICSI	ICSI
IS61LV2568	256K x 8 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS61LV2568 is a very high-speed, low power, 262,144-word by 8-bit CMOS static RAM. The IS61LV2568 is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low powe	ISSI 矽成半导体	ISSI
IS61LV2568	256K x 8 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS61LV2568 is a very high-speed, low power, 262,144-word by 8-bit CMOS static RAM. The IS61LV2568 is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low powe	ISSI 矽成半导体	ISSI
IS61LV2568_03	256K x 8 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS61LV2568 is a very high-speed, low power, 262,144-word by 8-bit CMOS static RAM. The IS61LV2568 is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low powe	ISSI 矽成半导体	ISSI
IS61LV2568-10K	256K x 8 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS61LV2568 is a very high-speed, low power, 262,144-word by 8-bit CMOS static RAM. The IS61LV2568 is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low powe	ISSI 矽成半导体	ISSI
IS61LV2568-10K	256K x 8 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS61LV2568 is a very high-speed, low power, 262,144-word by 8-bit CMOS static RAM. The IS61LV2568 is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low powe	ISSI 矽成半导体	ISSI
IS61LV2568-10KI	256K x 8 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS61LV2568 is a very high-speed, low power, 262,144-word by 8-bit CMOS static RAM. The IS61LV2568 is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low powe	ISSI 矽成半导体	ISSI
IS61LV2568-10T	256K x 8 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS61LV2568 is a very high-speed, low power, 262,144-word by 8-bit CMOS static RAM. The IS61LV2568 is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low powe	ISSI 矽成半导体	ISSI
IS61LV2568-10T	256K x 8 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS61LV2568 is a very high-speed, low power, 262,144-word by 8-bit CMOS static RAM. The IS61LV2568 is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low powe	ISSI 矽成半导体	ISSI
IS61LV2568-10TI	256K x 8 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS61LV2568 is a very high-speed, low power, 262,144-word by 8-bit CMOS static RAM. The IS61LV2568 is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low powe	ISSI 矽成半导体	ISSI
IS61LV2568-12K	256K x 8 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS61LV2568 is a very high-speed, low power, 262,144-word by 8-bit CMOS static RAM. The IS61LV2568 is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low powe	ISSI 矽成半导体	ISSI
IS61LV2568-12K	256K x 8 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS61LV2568 is a very high-speed, low power, 262,144-word by 8-bit CMOS static RAM. The IS61LV2568 is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low powe	ISSI 矽成半导体	ISSI
IS61LV2568-12KI	256K x 8 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS61LV2568 is a very high-speed, low power, 262,144-word by 8-bit CMOS static RAM. The IS61LV2568 is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low powe	ISSI 矽成半导体	ISSI
IS61LV2568-12T	256K x 8 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS61LV2568 is a very high-speed, low power, 262,144-word by 8-bit CMOS static RAM. The IS61LV2568 is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low powe	ISSI 矽成半导体	ISSI
IS61LV2568-12T	256K x 8 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS61LV2568 is a very high-speed, low power, 262,144-word by 8-bit CMOS static RAM. The IS61LV2568 is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low powe	ISSI 矽成半导体	ISSI
IS61LV2568-15K	256K x 8 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS61LV2568 is a very high-speed, low power, 262,144-word by 8-bit CMOS static RAM. The IS61LV2568 is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low powe	ISSI 矽成半导体	ISSI
IS61LV2568-15T	256K x 8 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS61LV2568 is a very high-speed, low power, 262,144-word by 8-bit CMOS static RAM. The IS61LV2568 is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low powe	ISSI 矽成半导体	ISSI
IS61LV2568-8K	256K x 8 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS61LV2568 is a very high-speed, low power, 262,144-word by 8-bit CMOS static RAM. The IS61LV2568 is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low powe	ISSI 矽成半导体	ISSI
IS61LV2568-8T	256K x 8 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS61LV2568 is a very high-speed, low power, 262,144-word by 8-bit CMOS static RAM. The IS61LV2568 is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low powe	ISSI 矽成半导体	ISSI
IS61LV256-8J	32K X 8 LOW VOLTAGE CMOS STATIC RAM	ICSI	ICSI
IS61LV256-8JI	32K X 8 LOW VOLTAGE CMOS STATIC RAM	ICSI	ICSI
IS61LV2568L	256K x 8 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS61LV2568L is a very high-speed, low power, 262,144-word by 8-bit CMOS static RAM. The IS61LV2568L is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low po	ISSI 矽成半导体	ISSI
IS61LV2568L-10KI	256K x 8 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS61LV2568L is a very high-speed, low power, 262,144-word by 8-bit CMOS static RAM. The IS61LV2568L is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low po	ISSI 矽成半导体	ISSI
IS61LV2568L-10KLI	256K x 8 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS61LV2568L is a very high-speed, low power, 262,144-word by 8-bit CMOS static RAM. The IS61LV2568L is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low po	ISSI 矽成半导体	ISSI
IS61LV2568L-10T	256K x 8 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS61LV2568L is a very high-speed, low power, 262,144-word by 8-bit CMOS static RAM. The IS61LV2568L is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low po	ISSI 矽成半导体	ISSI
IS61LV2568L-10TL	256K x 8 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS61LV2568L is a very high-speed, low power, 262,144-word by 8-bit CMOS static RAM. The IS61LV2568L is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low po	ISSI 矽成半导体	ISSI
IS61LV2568L-8K	256K x 8 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS61LV2568L is a very high-speed, low power, 262,144-word by 8-bit CMOS static RAM. The IS61LV2568L is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low po	ISSI 矽成半导体	ISSI
IS61LV2568L-8T	256K x 8 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS61LV2568L is a very high-speed, low power, 262,144-word by 8-bit CMOS static RAM. The IS61LV2568L is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low po	ISSI 矽成半导体	ISSI
IS61LV256-8T	32K X 8 LOW VOLTAGE CMOS STATIC RAM	ICSI	ICSI
IS61LV256-8TI	32K X 8 LOW VOLTAGE CMOS STATIC RAM	ICSI	ICSI
IS61LV256AL	32K x 8 LOW VOLTAGE CMOS STATIC RAM DESCRIPTION The ISSI IS61LV256AL is a very high-speed, low power, 32,768-wordby8-bitstaticRAM.ItisfabricatedusingISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns maximum. FEATURES • High-	ISSI 矽成半导体	ISSI
IS61LV256AL	32K x 8 LOW VOLTAGE CMOS STATIC RAM FEATURES • High-speed access times: — 10 ns • Automatic power-down when chip is deselected • CMOS low power operation — 60 μW (typical) CMOS standby — 65 mW (typical) operating • TTL compatible interface levels • Single 3.3V power supply • Fully static operation: no clock or refresh requ	ISSI 矽成半导体	ISSI
IS61LV256AL_V01	32K x 8 LOW VOLTAGE CMOS STATIC RAM FEATURES • High-speed access times: — 10 ns • Automatic power-down when chip is deselected • CMOS low power operation — 60 μW (typical) CMOS standby — 65 mW (typical) operating • TTL compatible interface levels • Single 3.3V power supply • Fully static operation: no clock or refresh requ	ISSI 矽成半导体	ISSI
IS61LV256AL-10J	32K x 8 LOW VOLTAGE CMOS STATIC RAM DESCRIPTION The ISSI IS61LV256AL is a very high-speed, low power, 32,768-wordby8-bitstaticRAM.ItisfabricatedusingISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns maximum. FEATURES • High-	ISSI 矽成半导体	ISSI
IS61LV256AL-10JI	32K x 8 LOW VOLTAGE CMOS STATIC RAM DESCRIPTION The ISSI IS61LV256AL is a very high-speed, low power, 32,768-wordby8-bitstaticRAM.ItisfabricatedusingISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns maximum. FEATURES • High-	ISSI 矽成半导体	ISSI
IS61LV256AL-10JL	32K x 8 LOW VOLTAGE CMOS STATIC RAM DESCRIPTION The ISSI IS61LV256AL is a very high-speed, low power, 32,768-wordby8-bitstaticRAM.ItisfabricatedusingISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns maximum. FEATURES • High-	ISSI 矽成半导体	ISSI
IS61LV256AL-10JL	32K x 8 LOW VOLTAGE CMOS STATIC RAM FEATURES • High-speed access times: — 10 ns • Automatic power-down when chip is deselected • CMOS low power operation — 60 μW (typical) CMOS standby — 65 mW (typical) operating • TTL compatible interface levels • Single 3.3V power supply • Fully static operation: no clock or refresh requ	ISSI 矽成半导体	ISSI
IS61LV256AL-10JLI	32K x 8 LOW VOLTAGE CMOS STATIC RAM FEATURES • High-speed access times: — 10 ns • Automatic power-down when chip is deselected • CMOS low power operation — 60 μW (typical) CMOS standby — 65 mW (typical) operating • TTL compatible interface levels • Single 3.3V power supply • Fully static operation: no clock or refresh requ	ISSI 矽成半导体	ISSI
IS61LV256AL-10JLI	32K x 8 LOW VOLTAGE CMOS STATIC RAM DESCRIPTION The ISSI IS61LV256AL is a very high-speed, low power, 32,768-wordby8-bitstaticRAM.ItisfabricatedusingISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns maximum. FEATURES • High-	ISSI 矽成半导体	ISSI
IS61LV256AL-10T	32K x 8 LOW VOLTAGE CMOS STATIC RAM DESCRIPTION The ISSI IS61LV256AL is a very high-speed, low power, 32,768-wordby8-bitstaticRAM.ItisfabricatedusingISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns maximum. FEATURES • High-	ISSI 矽成半导体	ISSI
IS61LV256AL-10TI	32K x 8 LOW VOLTAGE CMOS STATIC RAM DESCRIPTION The ISSI IS61LV256AL is a very high-speed, low power, 32,768-wordby8-bitstaticRAM.ItisfabricatedusingISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns maximum. FEATURES • High-	ISSI 矽成半导体	ISSI
IS61LV256AL-10TL	32K x 8 LOW VOLTAGE CMOS STATIC RAM DESCRIPTION The ISSI IS61LV256AL is a very high-speed, low power, 32,768-wordby8-bitstaticRAM.ItisfabricatedusingISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns maximum. FEATURES • High-	ISSI 矽成半导体	ISSI
IS61LV256AL-10TL	32K x 8 LOW VOLTAGE CMOS STATIC RAM FEATURES • High-speed access times: — 10 ns • Automatic power-down when chip is deselected • CMOS low power operation — 60 μW (typical) CMOS standby — 65 mW (typical) operating • TTL compatible interface levels • Single 3.3V power supply • Fully static operation: no clock or refresh requ	ISSI 矽成半导体	ISSI
IS61LV256AL-10TLI	32K x 8 LOW VOLTAGE CMOS STATIC RAM FEATURES • High-speed access times: — 10 ns • Automatic power-down when chip is deselected • CMOS low power operation — 60 μW (typical) CMOS standby — 65 mW (typical) operating • TTL compatible interface levels • Single 3.3V power supply • Fully static operation: no clock or refresh requ	ISSI 矽成半导体	ISSI
IS61LV256AL-10TLI	32K x 8 LOW VOLTAGE CMOS STATIC RAM DESCRIPTION The ISSI IS61LV256AL is a very high-speed, low power, 32,768-wordby8-bitstaticRAM.ItisfabricatedusingISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns maximum. FEATURES • High-	ISSI 矽成半导体	ISSI

IS61LV256产品属性

类型
描述
型号
IS61LV256
制造商
ICSI
制造商全称
Integrated Circuit Solution Inc
功能描述
32K X 8 LOW VOLTAGE CMOS STATIC RAM

IS61LV256供应商更多...

更新时间：2026-1-3 16:06:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
上海金庆电子技术有限公司	IS61LV256-10T	ISSI	新		10	全新原装货期两周	询价
深圳市东来宝电子科技有限公司	IS61LV256-10J	ISSI	24+	SOP28	47186	郑重承诺只做原装进口现货	询价
深圳市纳艾斯科技有限公司	IS61LV25616AL-10TL	ISSI	24+	TSOP44	8000	只做自己库存,全新原装进口正品假一赔百,可开13%增	询价
深圳市胜彬电子有限公司	IS61LV256-10J	ISSI	22+	SOJ	8000	原装正品支持实单	询价
深圳市壹芯创科技有限公司	IS61LV256	ISSI	22+	TQFP	5000	全新原装现货!自家库存!	询价
深圳市宏捷佳电子科技有限公司	IS61LV256-10J	ISSI	2023+	SOJ	50000	原装现货	询价
深圳市明嘉莱科技有限公司	IS61LV25616AL-10TL	ISSI	25+	TSOP-44	12689	明嘉莱只做原装正品现货	询价
天津市博通航睿技术有限公司	IS61LV256-10J	ISSI	23+	SOP28	7000		询价
深圳市安富世纪电子有限公司	IS61LV256	ISSI	23+	TSOP	7300	专注配单,只做原装进口现货	询价
深圳市凌旭科技有限公司	IS61LV25616AL-10TLI	ISSI	21+	TSOP-44	11533	全新原装ISSI内存全系列正品现货,假一赔十!公司可开17%增值税票! 0755-8279777813692179527张小姐期待你的来电!!	询价

IS61LV256芯片相关品牌

IS61LV256规格书下载地址

IS61LV256参数引脚图相关

IS61LV256数据表相关新闻

IS61C1024AL-12KLI
进口代理
2022-9-21
IS61C5128AS-25TLI
进口代理
2022-8-10
IS61LV25616AL-10T现货热卖！！！！
IS61LV25616AL-10T现货热卖！！！！
2021-7-7
IS61SF12832-8.5TQ
原装正品热卖假一赔十
2020-7-13
IS46TR16256AL-125KBLA2
4 Gbit FBGA-96 SDRAM - DDR3 动态随机存取存储器 , 2 Gbit SDRAM - DDR2 16 bit 动态随机存取存储器 , FBGA-84 16 bit 动态随机存取存储器 , 4 Gbit SDRAM - DDR3L - 40 C 动态随机存取存储器 , TSOP-54 动态随机存取存储器 , AS4C256M16D4-75 动态随机存取存储器
2020-7-9
IS61LV256AH-15JI，IS61LV256AH-10T，IS61LV256AH-10TI，IS61LV256AH-12J，IS61LV2568L-12TI，IS61LV2568L-10TLI，IS61LV2568L-10K，IS61LV2568-12T，IS61LV2568-12K，IS61LV2568-15T
IS61LV256AH-15JI，IS61LV256AH-10T，IS61LV256AH-10TI，IS61LV256AH-12J，IS61LV2568L-12TI，IS61LV2568L-10TLI，IS61LV2568L-10K，IS61LV2568-12T，IS61LV2568-12K，IS61LV2568-15T
2020-1-1

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IS61LV256价格

IS61LV256产品属性

IS61LV256供应商更多...

IS61LV256芯片相关品牌

IS61LV256规格书下载地址

IS61LV256参数引脚图相关

IS61LV256数据表相关新闻

IS61C1024AL-12KLI

IS61C5128AS-25TLI

IS61LV25616AL-10T现货热卖！！！！

IS61SF12832-8.5TQ

IS46TR16256AL-125KBLA2

IS61LV256AH-15JI，IS61LV256AH-10T，IS61LV256AH-10TI，IS61LV256AH-12J，IS61LV2568L-12TI，IS61LV2568L-10TLI，IS61LV2568L-10K，IS61LV2568-12T，IS61LV2568-12K，IS61LV2568-15T

DdatasheetPDF页码索引