型号 功能描述 生产厂家 企业 LOGO 操作
IS61LV256-15J

32K X 8 LOW VOLTAGE CMOS STATIC RAM

ICSI

IS61LV256-15J

32K x 8 LOW VOLTAGE CMOS STATIC RAM

文件:100 Kbytes Page:8 Pages

ISSI

矽成半导体

32K X 8 LOW VOLTAGE CMOS STATIC RAM

ICSI

32K x 8 Hight Speed SRAM with 3.3V

DESCRIPTION The ICSI IC61LV256 is a very high-speed, low power, 32,768-word by 8-bit static RAM. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns maximum. When CE is

ICSI

32K x 8 Hight Speed SRAM with 3.3V

DESCRIPTION The ICSI IC61LV256 is a very high-speed, low power, 32,768-word by 8-bit static RAM. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns maximum. When CE is

ICSI

32K x 8 Hight Speed SRAM with 3.3V

DESCRIPTION The ICSI IC61LV256 is a very high-speed, low power, 32,768-word by 8-bit static RAM. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns maximum. When CE is

ICSI

32K x 8 Hight Speed SRAM with 3.3V

DESCRIPTION The ICSI IC61LV256 is a very high-speed, low power, 32,768-word by 8-bit static RAM. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns maximum. When CE is

ICSI

32K x 8 Hight Speed SRAM with 3.3V

DESCRIPTION The ICSI IC61LV256 is a very high-speed, low power, 32,768-word by 8-bit static RAM. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns maximum. When CE is

ICSI

IS61LV256-15J产品属性

  • 类型

    描述

  • 型号

    IS61LV256-15J

  • 功能描述

    静态随机存取存储器 256K 32Kx8 15ns 3.3v

  • RoHS

  • 制造商

    Cypress Semiconductor

  • 存储容量

    16 Mbit

  • 组织

    1 M x 16

  • 访问时间

    55 ns

  • 电源电压-最大

    3.6 V

  • 电源电压-最小

    2.2 V

  • 最大工作电流

    22 uA

  • 最大工作温度

    + 85 C

  • 最小工作温度

    - 40 C

  • 安装风格

    SMD/SMT

  • 封装/箱体

    TSOP-48

  • 封装

    Tray

更新时间:2025-11-25 21:17:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ISSI
2022+
SOJ28
7600
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24+
NA/
11
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2016+
SOJ
6000
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SOJ28
27000
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ISSI
17+
SOJ28
9988
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ISSI
NA
8560
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2450+
SOJ28
8850
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INTEGRATEDS
23+
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9888
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IS-SI
6000
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19
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ISSI
25+
SOJ
2650
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