32K X 8 LOW VOLTAGE CMOS STATIC RAM

32K x 8 LOW VOLTAGE CMOS STATIC RAM

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32K X 8 LOW VOLTAGE CMOS STATIC RAM

封装/外壳：28-TSSOP（0.465"，11.80mm 宽） 包装：卷带（TR） 描述：IC SRAM 256KBIT PAR 28TSOP I 集成电路（IC） 存储器

IC SRAM 256K PARALLEL 28TSOP I

32K x 8 Hight Speed SRAM with 3.3V

DESCRIPTION The ICSI IC61LV256 is a very high-speed, low power, 32,768-word by 8-bit static RAM. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns maximum. When CE is

32K x 8 Hight Speed SRAM with 3.3V

DESCRIPTION The ICSI IC61LV256 is a very high-speed, low power, 32,768-word by 8-bit static RAM. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns maximum. When CE is

32K x 8 Hight Speed SRAM with 3.3V

DESCRIPTION The ICSI IC61LV256 is a very high-speed, low power, 32,768-word by 8-bit static RAM. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns maximum. When CE is

32K x 8 Hight Speed SRAM with 3.3V

DESCRIPTION The ICSI IC61LV256 is a very high-speed, low power, 32,768-word by 8-bit static RAM. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns maximum. When CE is

32K x 8 Hight Speed SRAM with 3.3V

DESCRIPTION The ICSI IC61LV256 is a very high-speed, low power, 32,768-word by 8-bit static RAM. It is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns maximum. When CE is